JP5590144B2 - スラリー、研磨液セット、研磨液、及び、基板の研磨方法 - Google Patents

スラリー、研磨液セット、研磨液、及び、基板の研磨方法 Download PDF

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Publication number
JP5590144B2
JP5590144B2 JP2012545748A JP2012545748A JP5590144B2 JP 5590144 B2 JP5590144 B2 JP 5590144B2 JP 2012545748 A JP2012545748 A JP 2012545748A JP 2012545748 A JP2012545748 A JP 2012545748A JP 5590144 B2 JP5590144 B2 JP 5590144B2
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Japan
Prior art keywords
polishing
liquid
mass
abrasive grains
film
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JP2012545748A
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English (en)
Japanese (ja)
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JPWO2012070541A1 (ja
Inventor
友洋 岩野
武憲 成田
大介 龍崎
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Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2012545748A priority Critical patent/JP5590144B2/ja
Publication of JPWO2012070541A1 publication Critical patent/JPWO2012070541A1/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/12—Etching, surface-brightening or pickling compositions containing heavy metal salts in an amount of at least 50% of the non-solvent components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2012545748A 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法 Active JP5590144B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012545748A JP5590144B2 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010260036 2010-11-22
JP2010260036 2010-11-22
PCT/JP2011/076822 WO2012070541A1 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2012545748A JP5590144B2 (ja) 2010-11-22 2011-11-21 スラリー、研磨液セット、研磨液、及び、基板の研磨方法

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JP2013098578A Division JP2013211567A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098574A Division JP5831495B2 (ja) 2010-11-22 2013-05-08 スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法
JP2013098580A Division JP2013211568A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

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JPWO2012070541A1 JPWO2012070541A1 (ja) 2014-05-19
JP5590144B2 true JP5590144B2 (ja) 2014-09-17

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JP2013098574A Active JP5831495B2 (ja) 2010-11-22 2013-05-08 スラリー及びその製造方法、研磨液セット、研磨液及びその製造方法、並びに、基板の研磨方法
JP2013098580A Withdrawn JP2013211568A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098578A Withdrawn JP2013211567A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

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JP2013098580A Withdrawn JP2013211568A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板
JP2013098578A Withdrawn JP2013211567A (ja) 2010-11-22 2013-05-08 スラリー、研磨液セット、研磨液、基板の研磨方法及び基板

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Country Link
US (5) US9988573B2 (cg-RX-API-DMAC7.html)
JP (4) JP5590144B2 (cg-RX-API-DMAC7.html)
KR (4) KR20130129396A (cg-RX-API-DMAC7.html)
CN (4) CN103222035B (cg-RX-API-DMAC7.html)
SG (1) SG190054A1 (cg-RX-API-DMAC7.html)
TW (4) TW201323592A (cg-RX-API-DMAC7.html)
WO (1) WO2012070541A1 (cg-RX-API-DMAC7.html)

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WO2018179064A1 (ja) 2017-03-27 2018-10-04 日立化成株式会社 スラリ及び研磨方法
WO2019043819A1 (ja) 2017-08-30 2019-03-07 日立化成株式会社 スラリ及び研磨方法
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
KR102576637B1 (ko) 2018-03-22 2023-09-07 가부시끼가이샤 레조낙 연마액, 연마액 세트 및 연마 방법
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CN116710531A (zh) * 2020-08-31 2023-09-05 秀博瑞殷株式公社 氧化铈粒子、包含其的化学机械研磨用浆料组合物以及半导体器件的制造方法
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