RU2015139807A - Полировальная композиция - Google Patents

Полировальная композиция Download PDF

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Publication number
RU2015139807A
RU2015139807A RU2015139807A RU2015139807A RU2015139807A RU 2015139807 A RU2015139807 A RU 2015139807A RU 2015139807 A RU2015139807 A RU 2015139807A RU 2015139807 A RU2015139807 A RU 2015139807A RU 2015139807 A RU2015139807 A RU 2015139807A
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RU
Russia
Prior art keywords
polishing composition
colloidal silica
composition according
particles
polishing
Prior art date
Application number
RU2015139807A
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English (en)
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RU2646938C2 (ru
Inventor
Дзун ИТО
Кадзутоси ХОТТА
Хироясу СУГИЯМА
Хитоси МОРИНАГА
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Фудзими Инкорпорейтед
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Publication of RU2015139807A publication Critical patent/RU2015139807A/ru
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Publication of RU2646938C2 publication Critical patent/RU2646938C2/ru

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Claims (13)

1. Полировальная композиция, используемая в варианте применения для полирования сапфировой подложки, имеющей неполярную плоскость или полуполярную плоскость, причем полировальная композиция включает:
частицы коллоидного кремнезема и воду,
при этом значение, полученное делением удельной площади поверхности (м2/г) частиц коллоидного кремнезема на среднечисленный диаметр частиц (нм) коллоидного кремнезема составляет 0,5 или более, и 3,0 или менее.
2. Полировальная композиция по п. 1, в которой значение, полученное делением удельной площади поверхности (м2/г) частиц коллоидного кремнезема на среднечисленный диаметр частиц (нм) коллоидного кремнезема, составляет 0,5 или более, и 2,0 или менее.
3. Полировальная композиция по п. 1, в которой, когда размер частиц при 3%-ной предельной точке размеров более мелких частиц обозначают как D3 и размер частиц при 97%-ной предельной точке размеров более мелких частиц обозначают как D97, в интегральном коэффициенте распределения частиц коллоидного кремнезема, значение, полученное делением D97 на D3, предпочтительно составляет 2,0 или более.
4. Полировальная композиция по п. 2, в которой, когда размер частиц при 3%-ной предельной точке размеров более мелких частиц обозначают как D3 и размер частиц при 97%-ной предельной точке размеров более мелких частиц обозначают как D97, в интегральном коэффициенте распределения частиц коллоидного кремнезема, значение, полученное делением D97 на D3, предпочтительно составляет 2,0 или более.
5. Полировальная композиция по п. 1, в которой аспектное отношение частиц коллоидного кремнезема составляет 1,10 или более.
6. Полировальная композиция по п. 2, в которой аспектное отношение частиц коллоидного кремнезема составляет 1,10 или более.
7. Полировальная композиция по п. 3, в которой аспектное отношение частиц коллоидного кремнезема составляет 1,10 или более.
8. Полировальная композиция по п. 4, в которой аспектное отношение частиц коллоидного кремнезема составляет 1,10 или более.
9. Полировальная композиция по любому из п.п. 1-8, в которой значение рН составляет 5 или более и 11 или менее.
10. Способ полирования для полирования сапфировой подложки, имеющей неполярную плоскость или полуполярную плоскость, с использованием полировальной композиции по любому из п.п. 1-9.
11. Способ изготовления сапфировой подложки, включающий стадию, в которой выполняют полирование способом полирования по п. 10.
RU2015139807A 2013-02-20 2014-02-07 Полировальная композиция RU2646938C2 (ru)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013031228 2013-02-20
JP2013-031228 2013-02-20
JP2013-177027 2013-08-28
JP2013177027A JP6436517B2 (ja) 2013-02-20 2013-08-28 研磨用組成物
PCT/JP2014/052956 WO2014129328A1 (ja) 2013-02-20 2014-02-07 研磨用組成物

Publications (2)

Publication Number Publication Date
RU2015139807A true RU2015139807A (ru) 2017-03-27
RU2646938C2 RU2646938C2 (ru) 2018-03-12

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RU2015139807A RU2646938C2 (ru) 2013-02-20 2014-02-07 Полировальная композиция

Country Status (7)

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US (1) US9879156B2 (ru)
JP (1) JP6436517B2 (ru)
KR (1) KR102176147B1 (ru)
CN (1) CN105027267A (ru)
RU (1) RU2646938C2 (ru)
TW (1) TWI576420B (ru)
WO (1) WO2014129328A1 (ru)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
WO2016033417A1 (en) * 2014-08-29 2016-03-03 Cabot Microelectronics Corporation Composition and method for polishing a sapphire surface
JP5940754B1 (ja) * 2014-10-14 2016-06-29 花王株式会社 サファイア板用研磨液組成物
US9916985B2 (en) * 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
CN107011804A (zh) * 2016-01-28 2017-08-04 浙江晶圣美纳米科技有限公司 一种蓝宝石化学机械抛光液
JP7061966B2 (ja) * 2016-12-22 2022-05-02 ニッタ・デュポン株式会社 研磨用組成物
RU2635132C1 (ru) * 2017-02-20 2017-11-09 Общество с ограниченной ответственностью "Научно-технический центр "Компас" (ООО "НТЦ "Компас") Полировальная суспензия для сапфировых подложек
EP3792327A1 (en) * 2019-09-11 2021-03-17 Fujimi Incorporated Polishing composition, polishing method and method for manufacturing semiconductor substrate

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JP4132432B2 (ja) * 1999-07-02 2008-08-13 日産化学工業株式会社 研磨用組成物
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US20060196849A1 (en) * 2005-03-04 2006-09-07 Kevin Moeggenborg Composition and method for polishing a sapphire surface
JP2008044078A (ja) * 2006-08-18 2008-02-28 Sumitomo Metal Mining Co Ltd サファイア基板の研磨方法
US8197303B2 (en) * 2006-12-28 2012-06-12 Saint-Gobain Ceramics & Plastics, Inc. Sapphire substrates and methods of making same
AU2008308583B2 (en) * 2007-10-05 2012-03-08 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
JP5263400B2 (ja) 2009-08-19 2013-08-14 日立化成株式会社 Ｃｍｐ研磨液及び研磨方法

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Publication number Publication date
KR102176147B1 (ko) 2020-11-10
CN105027267A (zh) 2015-11-04
TWI576420B (zh) 2017-04-01
WO2014129328A1 (ja) 2014-08-28
US9879156B2 (en) 2018-01-30
RU2646938C2 (ru) 2018-03-12
TW201446952A (zh) 2014-12-16
KR20150120980A (ko) 2015-10-28
US20160002500A1 (en) 2016-01-07
JP2014187348A (ja) 2014-10-02
JP6436517B2 (ja) 2018-12-12

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