TW201612284A - Polishing composition - Google Patents

Polishing composition

Info

Publication number
TW201612284A
TW201612284A TW104118489A TW104118489A TW201612284A TW 201612284 A TW201612284 A TW 201612284A TW 104118489 A TW104118489 A TW 104118489A TW 104118489 A TW104118489 A TW 104118489A TW 201612284 A TW201612284 A TW 201612284A
Authority
TW
Taiwan
Prior art keywords
mol
polishing composition
quaternary ammonium
ammonium compound
formula
Prior art date
Application number
TW104118489A
Other languages
Chinese (zh)
Other versions
TWI668301B (en
Inventor
Shogaku Ide
Makoto Tabata
Shinichiro Takami
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of TW201612284A publication Critical patent/TW201612284A/en
Application granted granted Critical
Publication of TWI668301B publication Critical patent/TWI668301B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

To provide a polishing composition which exhibits excellent performance of eliminating a bulge in the periphery of a hard laser mark. Provided is a polishing composition for silicon wafers. This polishing composition contains silica particles having a BET average particle diameter of 50 nm or less, a weak acid salt and a quaternary ammonium compound. The content (Y) (mol/L) of the quaternary ammonium compound satisfies formula (1). 0.80 ≤ (Y/Y0) (1) (In the formula, Y0 (mol/L) represents an amount that is defined by the following formula Y0 = AX + B, where A is the theoretical buffer ratio, X is the content (mol/L) of the weak acid salt, and B is the adsorption (mol/L) of the quaternary ammonium compound onto the silica particles.)
TW104118489A 2014-06-09 2015-06-08 Polishing composition TWI668301B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014118430A JP6357356B2 (en) 2014-06-09 2014-06-09 Polishing composition
JP2014-118430 2014-06-09

Publications (2)

Publication Number Publication Date
TW201612284A true TW201612284A (en) 2016-04-01
TWI668301B TWI668301B (en) 2019-08-11

Family

ID=54833182

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104118489A TWI668301B (en) 2014-06-09 2015-06-08 Polishing composition

Country Status (5)

Country Link
JP (1) JP6357356B2 (en)
KR (1) KR102394765B1 (en)
CN (1) CN106463382B (en)
TW (1) TWI668301B (en)
WO (1) WO2015190065A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677569B (en) * 2014-09-29 2019-11-21 日商福吉米股份有限公司 Polishing composition and polishing method
TWI813774B (en) * 2018-09-25 2023-09-01 日商日產化學股份有限公司 Method for polishing silicon wafers with suppressing a progress of abrasion of polishing carrier, and polishing liquid in same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102644385B1 (en) * 2015-12-22 2024-03-08 주식회사 케이씨텍 Slurry composition for poly silicon film polishing
JP6811089B2 (en) * 2016-12-26 2021-01-13 花王株式会社 Abrasive liquid composition for silicon wafer
WO2018150856A1 (en) 2017-02-17 2018-08-23 株式会社フジミインコーポレーテッド Polishing composition, method for producing same, and polishing method using polishing composition
JP6905836B2 (en) * 2017-03-02 2021-07-21 株式会社フジミインコーポレーテッド Polishing composition and method for producing polishing composition
KR102634780B1 (en) * 2017-04-17 2024-02-07 닛산 가가쿠 가부시키가이샤 Polishing composition containing amphoteric surfactant
JP2019029382A (en) * 2017-07-25 2019-02-21 株式会社ディスコ Wafer production method and wafer production device
JP7319190B2 (en) * 2017-09-29 2023-08-01 株式会社フジミインコーポレーテッド Polishing composition
WO2019124442A1 (en) * 2017-12-22 2019-06-27 日産化学株式会社 Composition for polishing for use in eliminating protrusion in periphery of laser mark
JP7253335B2 (en) * 2018-07-31 2023-04-06 株式会社フジミインコーポレーテッド Polishing composition, method for producing same, and polishing method using polishing composition
JP2020203980A (en) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 Chemical mechanical polishing composition, rinse composition, chemical mechanical polishing method, and rinsing method
CN114450376B (en) * 2019-09-30 2024-01-05 福吉米株式会社 Polishing composition
CN113423799A (en) * 2019-10-03 2021-09-21 日产化学株式会社 Polishing composition containing cation for eliminating swelling around laser mark

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4163785B2 (en) 1998-04-24 2008-10-08 スピードファム株式会社 Polishing composition and polishing method
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
JP3984902B2 (en) * 2002-10-31 2007-10-03 Ｊｓｒ株式会社 Chemical mechanical polishing aqueous dispersion for polishing polysilicon film or amorphous silicon film, chemical mechanical polishing method using the same, and semiconductor device manufacturing method
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
JP5430924B2 (en) * 2008-12-25 2014-03-05 日本化学工業株式会社 Semiconductor wafer polishing composition
JP5917406B2 (en) * 2010-10-22 2016-05-11 株式会社フジミインコーポレーテッド Silicon wafer edge polishing composition and silicon wafer edge polishing method using the same
JP6357296B2 (en) 2012-02-10 2018-07-11 株式会社フジミインコーポレーテッド Polishing composition and method for manufacturing semiconductor substrate
JP2014118430A (en) * 2012-12-13 2014-06-30 Sumika Bayer Urethane Kk Thermosetting coating composition and its coating film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677569B (en) * 2014-09-29 2019-11-21 日商福吉米股份有限公司 Polishing composition and polishing method
TWI813774B (en) * 2018-09-25 2023-09-01 日商日產化學股份有限公司 Method for polishing silicon wafers with suppressing a progress of abrasion of polishing carrier, and polishing liquid in same

Also Published As

Publication number Publication date
KR102394765B1 (en) 2022-05-09
WO2015190065A1 (en) 2015-12-17
JP2015233031A (en) 2015-12-24
JP6357356B2 (en) 2018-07-11
CN106463382A (en) 2017-02-22
TWI668301B (en) 2019-08-11
KR20170017877A (en) 2017-02-15
CN106463382B (en) 2020-02-07

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