JP2013046016A - 半導体装置とその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 70
- 239000011347 resin Substances 0.000 claims abstract description 52
- 229920005989 resin Polymers 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims description 40
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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Abstract
【解決手段】本願の発明に係る半導体装置10は、金属で形成された熱伝導部16と、該熱伝導部を表面に露出させるモールド樹脂18を有する半導体モジュール14と、接合材20により該半導体モジュール14に固定された冷却体12と、該熱伝導部16と該冷却体12の間に形成され、該熱伝導部16と該冷却体12を熱接続する熱伝導材22と、を備えたことを特徴とする。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。半導体装置10は、冷却体12を備えている。冷却体12は、例えば銅などの金属で形成されている。冷却体12の上方には、半導体モジュール14が形成されている。半導体モジュール14は、金属で形成された熱伝導部16と、熱伝導部16を表面に露出させるモールド樹脂18を有している。半導体モジュール14は、例えばIGBTなどの半導体素子をトランスファーモールド法により樹脂封止して形成されるものである。
本発明の実施の形態2に係る半導体装置については、説明の重複を避けるために、前述した実施の形態1に係る半導体装置との相違点を中心に説明する。図5は、本発明の実施の形態2に係る半導体装置の断面図である。冷却体12には冷却体溝12aが形成されている。熱伝導材22と接合材30は、冷却体溝12aを介して離間している。
本発明の実施の形態3に係る半導体装置については、説明の重複を避けるために、前述した実施の形態1に係る半導体装置との相違点を中心に説明する。図8は、本発明の実施の形態3に係る半導体装置の断面図である。接合材40は、モールド樹脂18の側面18aに及ぶように形成されている。また、熱伝導部16の熱伝導材22と接する面と、モールド樹脂18の底面18bは一平面を形成している。
本発明の実施の形態4に係る半導体装置については、説明の重複を避けるために、前述した実施の形態1に係る半導体装置との相違点を中心に説明する。図10は、本発明の実施の形態4に係る半導体装置の断面図である。モールド樹脂18の冷却体12に対向する面には、樹脂溝18dが形成されている。接合材60は樹脂溝18dを埋めるように形成されている。本発明の実施の形態4に係る半導体装置によれば、接合材60が樹脂溝18dを埋めるように形成されているので接合材60による半導体モジュール14と冷却体12の接合を強化することができる。
本発明の実施の形態5に係る半導体装置とその製造方法については、説明の重複を避けるために、前述した実施の形態1に係る半導体装置との相違点を中心に説明する。図11は、本発明の実施の形態5に係る半導体装置の断面図である。接合材70の突起部70aは、樹脂溝18dの内壁の一部に接している。
Claims (10)
- 金属で形成された熱伝導部と、前記熱伝導部を表面に露出させるモールド樹脂を有する半導体モジュールと、
接合材により前記半導体モジュールに固定された冷却体と、
前記熱伝導部と前記冷却体の間に形成され、前記熱伝導部と前記冷却体を熱接続する熱伝導材と、
を備えたことを特徴とする半導体装置。 - 前記半導体モジュールは、前記モールド樹脂で樹脂封止された半導体素子を備え、
前記接合材は絶縁材料で形成され、
前記接合材は、前記熱伝導部と前記熱伝導材を外部と遮断するように形成され、
前記熱伝導部は、前記半導体素子と絶縁されたことを特徴とする請求項1に記載の半導体装置。 - 前記冷却体には冷却体溝が形成され、
前記熱伝導材と前記接合材は、前記冷却体溝を介して離間することを特徴とする請求項1又は2に記載の半導体装置。 - 前記接合材は、前記モールド樹脂の側面に及ぶように形成されたことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
- 前記モールド樹脂の前記冷却体に対向する面には樹脂溝が形成され、
前記接合材は前記樹脂溝を埋めるように形成されたことを特徴とする請求項1乃至4のいずれか1項に記載の半導体装置。 - 前記接合材は前記モールド樹脂に接し、
前記モールド樹脂の前記接合材と接する部分は、前記モールド樹脂が前記接合材と接しない部分と比較して表面粗さが大きいことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記接合材は前記モールド樹脂に接し、
前記モールド樹脂の前記接合材と接する部分は、前記モールド樹脂が前記接合材と接しない部分と比較して親水性が高いことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記熱伝導材は導電性の材料で形成されたことを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 前記熱伝導材はシリコングリースで形成されたことを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 冷却体の表面に熱伝導材を形成する工程と、
前記冷却体の表面に突起部を有する接合材を形成する工程と、
金属で形成された熱伝導部と前記熱伝導部を表面に露出させるモールド樹脂を有する半導体モジュールの前記モールド樹脂に、樹脂溝を形成する工程と、
前記突起部が前記樹脂溝の内壁に接し、かつ前記熱伝導材が前記熱伝導部と重なるように前記冷却体と前記半導体モジュールを一体化する工程と、
を備えたことを特徴とする半導体装置の製造方法。
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US13/455,577 US20130049186A1 (en) | 2011-08-26 | 2012-04-25 | Semiconductor device and method of manufacture thereof |
DE102012214917.1A DE102012214917B4 (de) | 2011-08-26 | 2012-08-22 | Halbleitervorrichtung und Verfahren zu deren Herstellung |
CN201210304452.XA CN102956569B (zh) | 2011-08-26 | 2012-08-24 | 半导体装置及其制造方法 |
US14/806,303 US11088045B2 (en) | 2011-08-26 | 2015-07-22 | Semiconductor device having a cooling body with a groove |
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