CN102956569B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN102956569B
CN102956569B CN201210304452.XA CN201210304452A CN102956569B CN 102956569 B CN102956569 B CN 102956569B CN 201210304452 A CN201210304452 A CN 201210304452A CN 102956569 B CN102956569 B CN 102956569B
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cooling body
semiconductor device
grafting material
heat
heat conduction
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CN102956569A (zh
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宫本昇
菊池正雄
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于提供一种半导体装置及其制造方法,能够削减部件件数并且能够以充分的接合强度将半导体模块固定于冷却体,并且,能够使半导体模块充分地冷却。本申请发明的半导体装置(10)的特征在于,具备:半导体模块(14),具有由金属形成的导热部(16)和使该导热部在表面露出的模塑树脂(18);冷却体(12),利用接合材料(20)固定于该半导体模块(14);导热材料(22),形成在该导热部(16)和该冷却体(12)之间,将该导热部(16)和该冷却体(12)热连接。

Description

半导体装置及其制造方法
技术领域
本发明涉及在例如大功率的控制等中使用的半导体装置及其制造方法。
背景技术
在专利文献1中公开了将对半导体元件进行了树脂密封的半导体模块螺丝固定于冷却片(冷却体)的半导体装置。
专利文献
专利文献1:日本特开2006-100327号公报;
专利文献2:日本特开2001-250890号公报。
为了削减半导体装置的部件件数,希望不使用螺丝等将半导体模块固定于冷却体。在不使用螺丝等的情况下,必须经由某些材料将半导体模块固定于冷却体。但是,若使用适合于将半导体模块固定于冷却体的材料,则存在半导体模块的冷却变得不充分的情况。另一方面,若用适合于半导体模块的冷却的材料将半导体模块固定于冷却体,则存在其固定不充分的情况。
发明内容
本发明是为了解决上述那样的课题而提出的,其目的在于提供一种半导体装置及其制造方法,能够削减部件件数并且能够以充分的接合强度将半导体模块固定于冷却体,并且,能够使半导体模块充分地冷却。
本申请发明的半导体装置的特征在于,具备:半导体模块,具有由金属形成的导热部和使该导热部在表面露出的模塑树脂;冷却体,利用接合材料固定于该半导体模块;导热材料,形成在该导热部和该冷却体之间,将该导热部和该冷却体热连接。
本申请发明的半导体装置的制造方法的特征在于,具备:在冷却体的表面形成导热材料的工序;在该冷却体的表面形成具有突起部的接合材料的工序;在具有由金属形成的导热部和使该导热部在表面露出的模塑树脂的半导体模块的该模塑树脂上形成树脂槽的工序;以该突起部与该树脂槽的内壁相接触并且该导热材料与该导热部重叠的方式将该冷却体和该半导体模块一体化的工序。
根据本发明,在半导体模块和冷却体之间形成接合材料和导热材料,所以,能够削减部件件数并且能够以充分的接合强度将半导体模块固定于冷却体,并且,能够使半导体模块充分地冷却。
附图说明
图1是本发明的实施方式1的半导体装置的剖面图。
图2是表示将本发明的实施方式1的半导体装置的半导体模块固定于冷却体的立体图。
图3是表示本发明的实施方式1的半导体装置的变形例的剖面图。
图4是表示本发明的实施方式1的半导体装置的另一变形例的剖面图。
图5是表示本发明的实施方式2的半导体装置的剖面图。
图6是表示本发明的实施方式2的半导体装置的冷却体的立体图。
图7是表示本发明的实施方式2的半导体装置的冷却体、导热材料以及接合材料的立体图。
图8是本发明的实施方式3的半导体装置的剖面图。
图9是表示本发明的实施方式3的半导体装置的变形例的剖面图。
图10是本发明的实施方式4的半导体装置的剖面图。
图11是本发明的实施方式5的半导体装置的剖面图。
图12是表示将本发明的实施方式5的半导体装置的冷却体和半导体模块一体化的剖面图。
具体实施方式
实施方式1
图1是本发明的实施方式1的半导体装置的剖面图。半导体装置10具备冷却体12。冷却体12由例如铜等金属形成。在冷却体12的上方形成有半导体模块14。半导体模块14具有由金属形成的导热部16和使导热部16在表面露出的模塑树脂18。半导体模块14是利用传递模塑法对例如IGBT等半导体元件进行树脂密封而形成的。
对半导体模块14和冷却体12之间的部分进行说明。在半导体模块14和冷却体12之间形成有接合材料20和导热材料22。接合材料20将半导体模块14的模塑树脂18固定于冷却体12。接合材料20由绝缘材料形成。导热材料22形成在导热部16和冷却体12之间,将导热部16和冷却体12热连接。导热材料22由具有导电性的在导热方面优良的材料形成。
图2是表示将本发明的实施方式1的半导体装置的半导体模块固定于冷却体的立体图。接合材料20以包围导热材料22的方式形成。若使半导体模块14向箭头方向移动而固定于冷却体12,则由接合材料20使导热部16和导热材料22与外部隔断。
根据本发明的实施方式1的半导体装置,使用作为适合于将半导体模块14固定于冷却体12的材料的接合材料20,所以,能够以充分的接合强度将半导体模块14固定于冷却体12。进而,使用作为适合于半导体模块14的冷却的材料的导热材料22将导热部16和冷却体12热连接,所以,能够充分地冷却半导体模块14。此外,由于不使用螺丝等,所以,能够削减半导体装置10的部件件数。因此,根据本发明的实施方式1的半导体装置,能够削减部件件数并且以充分的接合强度将半导体模块14固定于冷却体12,并且,能够充分地冷却半导体模块14。
但是,已知越是导电性高的材料,导热性越优良。在本发明的实施方式1的半导体装置中,导热材料22由具有导电性的在导热方面优良的材料形成,所以,能够期待良好的导热。而且,由绝缘材料形成的接合材料20将导热部16和导热材料22与外部隔断,所以,能够确保导热材料22对外部的绝缘。确保半导体模块的绝缘性在具有高电压驱动的功率半导体的半导体模块等中特别有效。
图3是表示本发明的实施方式1的半导体装置的变形例的剖面图。在模塑树脂18的与接合材料20相接触的部分形成锚栓(anchor)部24,提高表面粗糙度。因此,模塑树脂18的与接合材料20相接触的部分的表面粗糙度比模塑树脂18未与接合材料20相接触的部分的表面粗糙度大。因此,能够强化利用接合材料20进行的半导体模块14和冷却体12的接合。
图4是表示本发明的实施方式1的半导体装置的另一变形例的剖面图。关于模塑树脂18的与接合材料20相接触的部分,通过实施亲水处理而形成有亲水部26。因此,模塑树脂18的与接合材料20相接触的部分的亲水性比模塑树脂18未与接合材料20相接触的部分的亲水性高。因此,能够强化利用接合材料20进行的半导体模块14和冷却体12的接合。并且,对模塑树脂18实施上述的处理以外的表面处理来强化利用接合材料20进行的半导体模块14和冷却体12的接合也可以。
除此以外,能够在不脱离本发明的特征的范围内进行各种变形。例如,接合材料20也可以由绝缘材料以外的材料形成。虽然导热材料22由具有导电性的材料形成,但是,也可以由例如硅润脂(siliconegrease)形成。若由硅润脂等绝缘体形成导热材料22,则确保半导体模块14的绝缘变得容易。此外,若利用绝缘体将模塑树脂18的内部的半导体元件和导热部16绝缘,则能够确保半导体模块的绝缘。
实施方式2
关于本发明的实施方式2的半导体装置,为了避免说明的重复,以与上述的实施方式1的半导体装置的不同点为中心进行说明。图5是本发明的实施方式2的半导体装置的剖面图。在冷却体12上形成有冷却体槽12a。导热材料22和接合材料30隔着冷却体槽12a而分离。
图6是表示本发明的实施方式2的半导体装置的冷却体的立体图。在冷却体12上呈框状地形成有冷却体槽12a。图7是表示本发明的实施方式2的半导体装置的冷却体、导热材料以及接合材料的立体图。接合材料30以包围导热材料22的方式形成。
如在本发明的实施方式1中所说明的那样,导热材料22是为了半导体模块14的冷却而形成的,接合材料30是为了半导体模块14和冷却体12的接合而形成的。导热材料22和接合材料30具有不同的功能,若进行混合,则存在不能够维持功能的可能性。但是,根据本发明的实施方式2的半导体装置,导热材料22和接合材料30隔着冷却体槽12a而分离,所以,能够避免两者混合。
实施方式3
关于本发明的实施方式3的半导体装置,为了避免说明的重复,以与上述实施方式1的半导体装置的不同点为中心进行说明。图8是本发明的实施方式3的半导体装置的剖面图。接合材料40以达到模塑树脂18的侧面18a的方式形成。此外,导热部16的与导热材料22相接触的面和模塑树脂18的底面18b形成一个平面。
根据本发明的实施方式3的半导体装置,接合材料40以达到侧面18a的方式形成,所以,能够强化利用接合材料40进行的半导体模块14和冷却体12的接合。此外,导热部16的与导热材料22相接触的面和模塑树脂18的底面18b形成一个平面,所以,底面18b和冷却体12的间隙变窄。因此,能够容易地使接合材料40达到侧面18a。
图9是表示本发明的实施方式3的半导体装置的变形例的剖面图。在模塑树脂18的底面外周形成缺口,由此,显出侧面18c。接合材料50以达到该侧面18c的方式形成。若这样构成,则与参照图8所说明的半导体装置相比,能够抑制接合材料的使用量并且能够强化半导体模块14和冷却体12的接合。
实施方式4
关于本发明的实施方式4的半导体装置,为了避免说明的重复,以与上述的实施方式1的半导体装置的不同点为中心进行说明。图10是本发明的实施方式4的半导体装置的剖面图。在模塑树脂18的与冷却体12对置的面形成有树脂槽18d。接合材料60以填埋树脂槽18d的方式形成。根据本发明的实施方式4的半导体装置,接合材料60以填埋树脂槽18d的方式形成,所以,能够强化利用接合材料60进行的半导体模块14和冷却体12的接合。
实施方式5
关于本发明的实施方式5的半导体装置与其制造方法,为了避免说明的重复,以与上述的实施方式1的半导体装置的不同点为中心进行说明。图11是本发明的实施方式5的半导体装置的剖面图。接合材料70的突起部70a与树脂槽18d的内壁的一部分相接触。
对本发明的实施方式5的半导体装置的制造方法进行说明。图12是表示将本发明的实施方式5的半导体装置的冷却体和半导体模块一体化的剖面图。在冷却体12的表面形成导热材料22。而且,在冷却体12的表面形成具有突起部70a的接合材料70。接合材料70以与导热材料22分离的方式形成。形成半导体模块14,该半导体模块14具有用金属形成的导热部16和使导热部16在表面露出的模塑树脂18。在模塑树脂18上形成树脂槽18d。在此之前的工序的顺序也可以适当地进行更换。
接着,将冷却体12和半导体模块14一体化。在该工序中,以突起部70a与树脂槽18d的内壁相接触并且导热材料22与导热部16重叠的方式将冷却体12和半导体模块14一体化。此时,突起部70a进入到树脂槽18d的内部,由此,对冷却体12和半导体模块14进行对位。
根据本发明的实施方式5的半导体装置的制造方法,使用突起部70a作为对位的基准,将冷却体12和半导体模块14一体化,所以,能够提高半导体装置的组装精度。此外,突起部70a与树脂槽18d的内壁相接触,所以,能够强化半导体模块14和冷却体12的接合。此外,接合材料70与导热材料22分离,所以,即使接合材料70向导热材料22的方向扩散,树脂槽18d也储存该扩散的量,能够防止接合材料70和导热材料22的混合。
本发明的实施方式5的半导体装置的制造方法的特征在于,在冷却体12和半导体模块14的一体化时的对位中有效利用突起部70a,使该突起部70a与树脂槽18d接合,由此,强化半导体模块14和冷却体12的接合。并且,将接合材料70与导热材料22分离地形成不是必须的。
在本发明的实施方式2以后所说明的半导体装置能够进行至少与本发明的实施方式1的半导体装置相同程度的变形。此外,也可以将在各实施方式中所说明的特征适当地进行组合。
附图标记的说明:
10半导体装置、12冷却体、12a冷却体槽、14半导体模块、16导热部、18模塑树脂、18a侧面、18b底面、18d树脂槽、20接合材料、22导热材料、24锚栓部、26亲水部、70接合材料、70a突起部。

Claims (9)

1.一种半导体装置,其特征在于,具备:
半导体模块,具有由金属形成的导热部和使所述导热部在表面露出的模塑树脂;
冷却体,利用接合材料固定于所述半导体模块;以及
导热材料,形成在所述导热部和所述冷却体之间,将所述导热部和所述冷却体热连接,
所述接合材料由包围所述导热材料的绝缘材料形成,
在所述冷却体上形成有冷却体槽,
所述导热材料和所述接合材料隔着所述冷却体槽而分离。
2.根据权利要求1所述的半导体装置,其特征在于,
所述半导体模块具备由所述模塑树脂进行了树脂密封的半导体元件,
所述接合材料由绝缘材料形成,
所述接合材料以将所述导热部和所述导热材料与外部隔断的方式形成,
所述导热部与所述半导体元件绝缘。
3.根据权利要求1所述的半导体装置,其特征在于,
所述接合材料以达到所述模塑树脂的侧面的方式形成。
4.根据权利要求1所述的半导体装置,其特征在于,
在所述模塑树脂的与所述冷却体对置的面形成有树脂槽,
所述接合材料以填埋所述树脂槽的方式形成。
5.根据权利要求1所述的半导体装置,其特征在于,
所述接合材料与所述模塑树脂相接触,
所述模塑树脂的与所述接合材料相接触的部分的表面粗糙度比所述模塑树脂未与所述接合材料相接触的部分的表面粗糙度大。
6.根据权利要求1所述的半导体装置,其特征在于,
所述接合材料与所述模塑树脂相接触,
所述模塑树脂的与所述接合材料相接触的部分的亲水性比所述模塑树脂未与所述接合材料相接触的部分的亲水性高。
7.根据权利要求1所述的半导体装置,其特征在于,
所述导热材料由导电性的材料形成。
8.根据权利要求1所述的半导体装置,其特征在于,
所述导热材料由硅润脂形成。
9.一种半导体装置的制造方法,其特征在于,具备:
在冷却体的表面形成导热材料的工序;
在所述冷却体的表面形成具有突起部的接合材料的工序;
在具有由金属形成的导热部和使所述导热部在表面露出的模塑树脂的半导体模块的所述模塑树脂上形成树脂槽的工序;以及
以所述突起部与所述树脂槽的内壁相接触并且所述导热材料与所述导热部重叠的方式将所述冷却体和所述半导体模块一体化的工序。
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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669917B1 (ja) * 2013-11-01 2015-02-18 三菱電機株式会社 電源装置
WO2015102046A1 (ja) 2014-01-06 2015-07-09 三菱電機株式会社 半導体装置
JP6249829B2 (ja) 2014-03-10 2017-12-20 三菱電機株式会社 半導体装置およびその製造方法
WO2015141284A1 (ja) * 2014-03-19 2015-09-24 富士電機株式会社 半導体モジュールユニットおよび半導体モジュール
WO2016006054A1 (ja) 2014-07-09 2016-01-14 三菱電機株式会社 半導体装置
WO2016056286A1 (ja) * 2014-10-10 2016-04-14 信越化学工業株式会社 熱伝導性シリコーングリースを用いた半導体装置
JP2018026370A (ja) * 2014-11-13 2018-02-15 株式会社日立製作所 パワー半導体モジュール
JP6707328B2 (ja) * 2015-09-01 2020-06-10 ローム株式会社 パワーモジュール、パワーモジュールの放熱構造、およびパワーモジュールの接合方法
EP3506345A1 (en) * 2017-12-26 2019-07-03 Joinset Co., Ltd Thermally conductive member
DE102020116231A1 (de) 2020-06-19 2021-12-23 Seg Automotive Germany Gmbh Anordnung mit zwei elektrisch gegeneinander isolierten Bauelementen
DE102020212532A1 (de) 2020-10-05 2022-04-07 Robert Bosch Gesellschaft mit beschränkter Haftung Vorrichtung mit einem Bauelement, einem Kühlkörper und einer wärmeleitenden Schicht

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941332A (zh) * 2005-09-29 2007-04-04 沛亨半导体股份有限公司 高分子材料与芯片的局部接合结构
CN101770997A (zh) * 2010-01-29 2010-07-07 江苏长电科技股份有限公司 树脂线路板芯片倒装带散热块封装结构

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758254A (ja) 1993-08-19 1995-03-03 Fujitsu Ltd マルチチップモジュール及びその製造方法
JPH10337A (ja) 1996-06-19 1998-01-06 Nippon Steel Corp 金属製触媒コンバータおよびその製造方法
US5838545A (en) * 1996-10-17 1998-11-17 International Business Machines Corporation High performance, low cost multi-chip modle package
JPH11111897A (ja) * 1997-10-03 1999-04-23 Hitachi Ltd マルチチップ型半導体装置
JP3553849B2 (ja) 2000-03-07 2004-08-11 富士電機デバイステクノロジー株式会社 半導体装置及びその製造方法
TW445615B (en) 2000-08-04 2001-07-11 Siliconware Precision Industries Co Ltd Semiconductor package with enhanced heat dissipation function
JP2002110872A (ja) * 2000-09-27 2002-04-12 Kyocera Corp 配線基板および配線基板モジュール
JP3807354B2 (ja) * 2001-08-06 2006-08-09 株式会社デンソー 半導体装置
JP2003060137A (ja) 2001-08-08 2003-02-28 Ibiden Co Ltd モジュール用基板
DE10164494B9 (de) * 2001-12-28 2014-08-21 Epcos Ag Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung
JP3590039B2 (ja) * 2002-07-24 2004-11-17 沖電気工業株式会社 半導体装置及びその製造方法
JP2004103846A (ja) * 2002-09-10 2004-04-02 Mitsubishi Electric Corp 電力用半導体装置
JP3740116B2 (ja) 2002-11-11 2006-02-01 三菱電機株式会社 モールド樹脂封止型パワー半導体装置及びその製造方法
JP2005142189A (ja) * 2003-11-04 2005-06-02 Toyota Industries Corp 半導体装置
JP4583122B2 (ja) 2004-09-28 2010-11-17 三菱電機株式会社 半導体装置及びその製造方法
JP2006100337A (ja) 2004-09-28 2006-04-13 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法
JP4046120B2 (ja) 2005-01-27 2008-02-13 三菱電機株式会社 絶縁シートの製造方法およびパワーモジュールの製造方法
US7265445B2 (en) * 2005-03-23 2007-09-04 Texas Instruments Incorporated Integrated circuit package
JP2006344770A (ja) 2005-06-09 2006-12-21 Mitsubishi Electric Corp 半導体モジュールおよび半導体装置
CN101278383B (zh) * 2005-11-02 2011-04-13 松下电器产业株式会社 电子电路装置及其制造方法
TWI355048B (en) * 2006-12-13 2011-12-21 Siliconware Precision Industries Co Ltd Heat-dissipation semiconductor package and heat-di
US7635916B2 (en) * 2007-03-23 2009-12-22 Honeywell International Inc. Integrated circuit package with top-side conduction cooling
JP5233170B2 (ja) * 2007-05-31 2013-07-10 日亜化学工業株式会社 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法
US8008133B2 (en) * 2008-02-11 2011-08-30 Globalfoundries Inc. Chip package with channel stiffener frame
JP5543084B2 (ja) * 2008-06-24 2014-07-09 ピーエスフォー ルクスコ エスエイアールエル 半導体装置の製造方法
KR101004842B1 (ko) * 2008-07-25 2010-12-28 삼성전기주식회사 전자 칩 모듈
JP5071405B2 (ja) 2009-02-13 2012-11-14 三菱電機株式会社 電力用半導体装置
JP4844904B2 (ja) * 2009-03-27 2011-12-28 Tdk株式会社 多層配線板及びその製造方法
JP5504683B2 (ja) * 2009-04-27 2014-05-28 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5420313B2 (ja) * 2009-05-20 2014-02-19 オリンパス株式会社 接合光学素子を有する光学部品及びその製造方法
US8362607B2 (en) * 2009-06-03 2013-01-29 Honeywell International Inc. Integrated circuit package including a thermally and electrically conductive package lid
CA2676495C (en) * 2009-08-24 2014-04-08 Ibm Canada Limited - Ibm Canada Limitee Mechanical barrier element for improved thermal reliability of electronic components
JP5306171B2 (ja) * 2009-12-25 2013-10-02 三菱電機株式会社 半導体装置
WO2011092859A1 (ja) * 2010-02-01 2011-08-04 トヨタ自動車株式会社 半導体装置の製造方法および半導体装置
JP5455720B2 (ja) * 2010-03-12 2014-03-26 パナソニック株式会社 光半導体パッケージおよび光半導体装置
JP5445341B2 (ja) 2010-06-11 2014-03-19 三菱電機株式会社 半導体装置
JP5257817B2 (ja) 2010-06-15 2013-08-07 三菱電機株式会社 半導体装置
JP5382049B2 (ja) * 2010-06-30 2014-01-08 株式会社デンソー 半導体装置
TWI520386B (zh) * 2010-07-29 2016-02-01 神基科技股份有限公司 發光二極體總成的結構與其製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1941332A (zh) * 2005-09-29 2007-04-04 沛亨半导体股份有限公司 高分子材料与芯片的局部接合结构
CN101770997A (zh) * 2010-01-29 2010-07-07 江苏长电科技股份有限公司 树脂线路板芯片倒装带散热块封装结构

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