US20130049186A1 - Semiconductor device and method of manufacture thereof - Google Patents
Semiconductor device and method of manufacture thereof Download PDFInfo
- Publication number
- US20130049186A1 US20130049186A1 US13/455,577 US201213455577A US2013049186A1 US 20130049186 A1 US20130049186 A1 US 20130049186A1 US 201213455577 A US201213455577 A US 201213455577A US 2013049186 A1 US2013049186 A1 US 2013049186A1
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- Prior art keywords
- heat conductive
- semiconductor device
- cooling body
- bonding material
- molded resin
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 6
- 238000001816 cooling Methods 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000011347 resin Substances 0.000 claims abstract description 54
- 229920005989 resin Polymers 0.000 claims abstract description 54
- 239000004020 conductor Substances 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 claims abstract description 3
- 238000010168 coupling process Methods 0.000 claims abstract description 3
- 238000005859 coupling reaction Methods 0.000 claims abstract description 3
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 230000004075 alteration Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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Definitions
- Japanese Laid-Open Patent Publication No. 2006-100327 discloses a semiconductor device in which a semiconductor module formed by encapsulating a semiconductor element with resin is secured to a cooling fin (or cooling body) by means of screws.
- Japanese Laid-Open Patent Publication No. 2001-250890 also discloses related art.
- the semiconductor module In order to reduce the number of parts in such a semiconductor device, it is desirable to secure the semiconductor module to the cooling body without using screws or the like. To accomplish this, the semiconductor module must be secured to the cooling body by way of some adhesive or bonding material which is disposed therebetween. It should be noted that such material must have substantial heat conductivity, as well as providing substantial bonding strength. It has been found, however, that the use of a material suitable for securing the semiconductor module to the cooling body may result in insufficient cooling of the semiconductor module. On the other hand, the use of a material suitable for cooling the semiconductor module may result in inadequate securing of the semiconductor module to the cooling body.
- the present invention has been made to solve the above problems. It is, therefore, an object of the present invention to provide a semiconductor device which has a reduced number of parts, yet in which the semiconductor module is attached to a cooling body with substantial bonding strength and cooled adequately. Another object of the present invention is to provide a method of manufacturing such a semiconductor device.
- a semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.
- a method of manufacturing a semiconductor device includes the steps of forming heat conductive material on a surface of a cooling body, forming bonding material on the surface of the cooling body, the bonding material having a projection, forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of the molded resin, and integrally securing the cooling body and the semiconductor module together in such a manner that the projection is in contact with an inner wall of the resin groove, and that the heat conductive portion overlaps and is in contact with the heat conductive material.
- FIG. 1 is a cross-sectional view of a semiconductor device in accordance with a first embodiment of the present invention
- FIG. 2 is a perspective view showing the way in which the semiconductor module of the semiconductor device of the first embodiment is secured to the cooling body;
- FIG. 3 is a cross-sectional view showing a variation of the semiconductor device of the first embodiment
- FIG. 4 is a cross-sectional view showing another variation of the semiconductor device of the first embodiment
- FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment
- FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment
- FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment
- FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment.
- FIG. 9 is a cross-sectional view showing a variation of the semiconductor device of the third embodiment.
- FIG. 10 is a cross-sectional view of the semiconductor device of the fourth embodiment.
- FIG. 11 is a cross-sectional view of the semiconductor device of the fifth embodiment.
- FIG. 12 is a cross-sectional view showing the way in which the cooling body and the semiconductor module of the semiconductor device of the fifth embodiment are integrally secured together.
- FIG. 1 is a cross-sectional view of a semiconductor device 10 in accordance with a first embodiment of the present invention.
- the semiconductor device 10 is provided with a cooling body 12 .
- the cooling body 12 is formed of metal, e.g., copper.
- a semiconductor module 14 is disposed above the cooling body 12 .
- the semiconductor module 14 has a heat conductive portion 16 formed of metal and a molded resin 18 having a surface at which the heat conductive portion 16 is exposed.
- the semiconductor module 14 is formed, e.g., by encapsulating a semiconductor element, such as an IGBT, with resin by means of transfer molding.
- a bonding material 20 and a heat conductive material 22 are formed between the semiconductor module 14 and the cooling body 12 .
- the bonding material 20 secures the molded resin 18 of the semiconductor module 14 to the cooling body 12 .
- the bonding material 20 is formed of insulating material.
- the heat conductive material 22 is formed between and thermally couples the heat conductive portion 16 and the cooling body 12 .
- the heat conductive material 22 is formed of electrically conductive material having excellent heat conductivity.
- FIG. 2 is a perspective view showing the way in which the semiconductor module of the semiconductor device of the first embodiment is secured to the cooling body.
- the bonding material 20 is formed to surround the heat conductive material 22 .
- the semiconductor module 14 is moved in the direction of the arrow of FIG. 2 and brought into bonding engagement with the bonding material 20 so that the semiconductor module 14 is secured to the cooling body 12 .
- the heat conductive portion 16 and the heat conductive material 22 are separated from the outside by the bonding material 20 .
- the semiconductor module 14 is secured to the cooling body 12 by means of the bonding material 20 , which is suitable for that purpose, making it possible to attach the semiconductor module 14 to the cooling body 12 with substantial bonding strength.
- the heat conductive portion 16 is thermally coupled to the cooling body 12 by way of the heat conductive material 22 , which is suitable for cooling the semiconductor module 14 , making it possible to adequately cool the semiconductor module 14 .
- the semiconductor device 10 has a reduced number of parts, since the semiconductor module 14 is secured to the cooling body 12 without using screws or the like. Thus, although the semiconductor device of the first embodiment has a reduced number of parts, the semiconductor module 14 is attached to the cooling body 12 with substantial bonding strength and cooled adequately.
- the heat conductive material 22 is formed of electrically conductive material having excellent heat conductivity, and hence is expected to provide good heat conduction. Furthermore, the heat conductive portion 16 and the heat conductive material 22 are separated from the outside by the bonding material 20 , which is formed of insulating material, thereby insulating the heat conductive material 22 from the outside atmosphere. Insulating a semiconductor module from the outside atmosphere is an effective way to maintain the characteristics of the semiconductor module, especially if the module includes a power semiconductor device driven by a high voltage.
- FIG. 3 is a cross-sectional view showing a variation of the semiconductor device of the first embodiment.
- an anchor portion 24 is formed in the surface of the molded resin 18 in contact with the bonding material 20 , thereby increasing the surface roughness of that surface.
- the surface of the molded resin 18 in contact with the bonding material 20 has a greater surface roughness than the surfaces of the molded resin 18 which are not in contact with the bonding material 20 . In this way it is possible to increase the bonding strength of the bonding material 20 between the semiconductor module 14 and the cooling body 12 .
- FIG. 4 is a cross-sectional view showing another variation of the semiconductor device of the first embodiment.
- the portion of the molded resin 18 in contact with the bonding material 20 has been subjected to hydrophilic treatment, forming a hydrophilic portion 26 . Therefore, the portion of the molded resin 18 in contact with the bonding material 20 is more hydrophilic than the portions of the molded resin 18 which are not in contact with the bonding material 20 . In this way it is possible to increase the bonding strength of the bonding material 20 between the semiconductor module 14 and the cooling body 12 . It should be noted that the bonding strength of the bonding material 20 between the semiconductor module 14 and the cooling body 12 may be increased by subjecting the molded resin 18 to a surface treatment other than those described above.
- the bonding material 20 may be formed of material other than insulating material.
- the heat conductive material 22 is formed of electrically conductive material, it is to be understood that in other embodiments it may be formed of, e.g., silicone grease.
- the heat conductive material 22 is formed of an insulating material such as silicone grease, it is easier to insulate the semiconductor module 14 .
- the semiconductor element and the heat conductive portion 16 within the molded resin 18 may be insulated from each other by insulating material in order to ensure the insulation of the semiconductor module.
- FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment.
- the cooling body 12 has a cooling body groove 12 a formed therein.
- the heat conductive material 22 is separated from a cooling material 30 by the cooling body groove 12 a.
- FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment.
- the cooling body groove 12 a formed in the cooling body 12 , has a rectangular annular shape.
- FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment.
- the bonding material 30 is formed to surround the heat conductive material 22 .
- the heat conductive material 22 serves to cool the semiconductor module 14
- the bonding material 30 serves to bond the semiconductor module 14 to the cooling body 12 .
- the heat conductive material 22 and the bonding material 30 have different functions. Therefore, mixing or bringing into contact these materials may prevent them from functioning properly.
- the heat conductive material 22 and the bonding material 30 are prevented from being mixed or brought into contact with each other, since they are separated from each other by the cooling body groove 12 a.
- FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment.
- a bonding material 40 is formed to extend to cover the side surfaces 18 a of the molded resin 18 . Further, the surface of the heat conductive portion 16 in contact with the heat conductive material 22 and the bottom surface 18 b of the molded resin 18 form a single plane.
- the bonding material 40 extends to cover the side surfaces 18 a of the molded resin 18 , the bonding strength of the bonding material 40 between the semiconductor module 14 and the cooling body 12 is increased. Further, since the surface of the heat conductive portion 16 in contact with the heat conductive material 22 and the bottom surface 18 b of the molded resin 18 form a single plane, the gap between the bottom surface 18 b and the cooling body 12 is narrowed, making it easier to form the bonding material 40 , which extends to cover the side surfaces 18 a of the molded resin 18 .
- FIG. 9 is a cross-sectional view showing a variation of the semiconductor device of the third embodiment.
- the outer circumferential bottom edge of the molded resin 18 has been notched to form side surfaces 18 c .
- a bonding material 50 is formed to extend to cover these side surfaces 18 c .
- FIG. 12 is a cross-sectional view showing the way in which the cooling body and the semiconductor module of the semiconductor device of the fifth embodiment are integrally secured together.
- the heat conductive material 22 is formed on the surface of the cooling body 12 .
- the bonding material 70 having the projection 70 a is formed on the surface of the cooling body 12 .
- the bonding material 70 is formed at a distance from the heat conductive material 22 .
- the semiconductor module 14 is then formed, which has the heat conductive portion 16 formed of metal and the molded resin 18 having a surface at which the heat conductive portion 16 is exposed.
- the resin groove 18 d is then formed in the molded resin 18 . It should be noted that the order of the above process steps may be varied where appropriate.
- the semiconductor device manufacturing method of the fifth embodiment is characterized in that the cooling body 12 and the semiconductor module 14 are aligned with each other using the projection 70 a when integrally securing them together, and that the projection 70 a is brought into bonding engagement with the resin groove 18 d in order to increase the bonding strength between the semiconductor module 14 and the cooling body 12 .
- the bonding material 70 need not necessarily be formed at a distance from the heat conductive material 22 .
- semiconductor devices described in connection with the second and subsequent embodiments are susceptible of alterations at least similar to those that can be made to the semiconductor device of the first embodiment. Further, features of different embodiments may be combined where appropriate.
Abstract
A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.
Description
- 1. Field of the Invention
- The present invention relates to a semiconductor device used, e.g., for high power control, and a method of manufacture thereof.
- 2. Background Art
- Japanese Laid-Open Patent Publication No. 2006-100327 discloses a semiconductor device in which a semiconductor module formed by encapsulating a semiconductor element with resin is secured to a cooling fin (or cooling body) by means of screws. Japanese Laid-Open Patent Publication No. 2001-250890 also discloses related art.
- In order to reduce the number of parts in such a semiconductor device, it is desirable to secure the semiconductor module to the cooling body without using screws or the like. To accomplish this, the semiconductor module must be secured to the cooling body by way of some adhesive or bonding material which is disposed therebetween. It should be noted that such material must have substantial heat conductivity, as well as providing substantial bonding strength. It has been found, however, that the use of a material suitable for securing the semiconductor module to the cooling body may result in insufficient cooling of the semiconductor module. On the other hand, the use of a material suitable for cooling the semiconductor module may result in inadequate securing of the semiconductor module to the cooling body.
- The present invention has been made to solve the above problems. It is, therefore, an object of the present invention to provide a semiconductor device which has a reduced number of parts, yet in which the semiconductor module is attached to a cooling body with substantial bonding strength and cooled adequately. Another object of the present invention is to provide a method of manufacturing such a semiconductor device. The features and advantages of the present invention may be summarized as follows.
- According to one aspect of the present invention, a semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.
- According to another aspect of the present invention, a method of manufacturing a semiconductor device, includes the steps of forming heat conductive material on a surface of a cooling body, forming bonding material on the surface of the cooling body, the bonding material having a projection, forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of the molded resin, and integrally securing the cooling body and the semiconductor module together in such a manner that the projection is in contact with an inner wall of the resin groove, and that the heat conductive portion overlaps and is in contact with the heat conductive material.
- Other and further objects, features and advantages of the invention will appear more fully from the following description.
-
FIG. 1 is a cross-sectional view of a semiconductor device in accordance with a first embodiment of the present invention; -
FIG. 2 is a perspective view showing the way in which the semiconductor module of the semiconductor device of the first embodiment is secured to the cooling body; -
FIG. 3 is a cross-sectional view showing a variation of the semiconductor device of the first embodiment; -
FIG. 4 is a cross-sectional view showing another variation of the semiconductor device of the first embodiment; -
FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment; -
FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment; -
FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment; -
FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment; -
FIG. 9 is a cross-sectional view showing a variation of the semiconductor device of the third embodiment; -
FIG. 10 is a cross-sectional view of the semiconductor device of the fourth embodiment; -
FIG. 11 is a cross-sectional view of the semiconductor device of the fifth embodiment; and -
FIG. 12 is a cross-sectional view showing the way in which the cooling body and the semiconductor module of the semiconductor device of the fifth embodiment are integrally secured together. -
FIG. 1 is a cross-sectional view of asemiconductor device 10 in accordance with a first embodiment of the present invention. Thesemiconductor device 10 is provided with acooling body 12. Thecooling body 12 is formed of metal, e.g., copper. Asemiconductor module 14 is disposed above thecooling body 12. Thesemiconductor module 14 has a heatconductive portion 16 formed of metal and a moldedresin 18 having a surface at which the heatconductive portion 16 is exposed. Thesemiconductor module 14 is formed, e.g., by encapsulating a semiconductor element, such as an IGBT, with resin by means of transfer molding. - The following description will be directed to components between the
semiconductor module 14 and thecooling body 12. Abonding material 20 and a heatconductive material 22 are formed between thesemiconductor module 14 and thecooling body 12. Thebonding material 20 secures themolded resin 18 of thesemiconductor module 14 to thecooling body 12. The bondingmaterial 20 is formed of insulating material. The heatconductive material 22 is formed between and thermally couples the heatconductive portion 16 and thecooling body 12. The heatconductive material 22 is formed of electrically conductive material having excellent heat conductivity. -
FIG. 2 is a perspective view showing the way in which the semiconductor module of the semiconductor device of the first embodiment is secured to the cooling body. The bondingmaterial 20 is formed to surround the heatconductive material 22. Thesemiconductor module 14 is moved in the direction of the arrow ofFIG. 2 and brought into bonding engagement with thebonding material 20 so that thesemiconductor module 14 is secured to thecooling body 12. As a result, the heatconductive portion 16 and the heatconductive material 22 are separated from the outside by thebonding material 20. - In the semiconductor device of the first embodiment, the
semiconductor module 14 is secured to thecooling body 12 by means of thebonding material 20, which is suitable for that purpose, making it possible to attach thesemiconductor module 14 to thecooling body 12 with substantial bonding strength. Further, the heatconductive portion 16 is thermally coupled to thecooling body 12 by way of the heatconductive material 22, which is suitable for cooling thesemiconductor module 14, making it possible to adequately cool thesemiconductor module 14. Further, thesemiconductor device 10 has a reduced number of parts, since thesemiconductor module 14 is secured to thecooling body 12 without using screws or the like. Thus, although the semiconductor device of the first embodiment has a reduced number of parts, thesemiconductor module 14 is attached to thecooling body 12 with substantial bonding strength and cooled adequately. - As is known in the art, materials having higher electrical conductivity have higher heat conductivity. In the semiconductor device of the first embodiment, the heat
conductive material 22 is formed of electrically conductive material having excellent heat conductivity, and hence is expected to provide good heat conduction. Furthermore, the heatconductive portion 16 and the heatconductive material 22 are separated from the outside by the bondingmaterial 20, which is formed of insulating material, thereby insulating the heatconductive material 22 from the outside atmosphere. Insulating a semiconductor module from the outside atmosphere is an effective way to maintain the characteristics of the semiconductor module, especially if the module includes a power semiconductor device driven by a high voltage. -
FIG. 3 is a cross-sectional view showing a variation of the semiconductor device of the first embodiment. In this variation, ananchor portion 24 is formed in the surface of themolded resin 18 in contact with thebonding material 20, thereby increasing the surface roughness of that surface. As a result, the surface of themolded resin 18 in contact with the bondingmaterial 20 has a greater surface roughness than the surfaces of the moldedresin 18 which are not in contact with thebonding material 20. In this way it is possible to increase the bonding strength of thebonding material 20 between thesemiconductor module 14 and thecooling body 12. -
FIG. 4 is a cross-sectional view showing another variation of the semiconductor device of the first embodiment. In this variation, the portion of themolded resin 18 in contact with the bondingmaterial 20 has been subjected to hydrophilic treatment, forming ahydrophilic portion 26. Therefore, the portion of the moldedresin 18 in contact with thebonding material 20 is more hydrophilic than the portions of the moldedresin 18 which are not in contact with thebonding material 20. In this way it is possible to increase the bonding strength of thebonding material 20 between thesemiconductor module 14 and the coolingbody 12. It should be noted that the bonding strength of thebonding material 20 between thesemiconductor module 14 and the coolingbody 12 may be increased by subjecting the moldedresin 18 to a surface treatment other than those described above. - Various other alterations may be made to the first embodiment without departing from the features of the present invention. For example, the
bonding material 20 may be formed of material other than insulating material. Further, although in the first embodiment the heatconductive material 22 is formed of electrically conductive material, it is to be understood that in other embodiments it may be formed of, e.g., silicone grease. When the heatconductive material 22 is formed of an insulating material such as silicone grease, it is easier to insulate thesemiconductor module 14. Further, the semiconductor element and the heatconductive portion 16 within the moldedresin 18 may be insulated from each other by insulating material in order to ensure the insulation of the semiconductor module. - The following description of a semiconductor device in accordance with a second embodiment of the present invention will be primarily limited to the differences from the semiconductor device of the first embodiment in order to avoid undue repetition.
FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment. In this semiconductor device, the coolingbody 12 has a coolingbody groove 12 a formed therein. The heatconductive material 22 is separated from a coolingmaterial 30 by the coolingbody groove 12 a. -
FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment. The coolingbody groove 12 a, formed in the coolingbody 12, has a rectangular annular shape.FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment. Thebonding material 30 is formed to surround the heatconductive material 22. - As described above in connection with the first embodiment, the heat
conductive material 22 serves to cool thesemiconductor module 14, and thebonding material 30 serves to bond thesemiconductor module 14 to the coolingbody 12. Thus, the heatconductive material 22 and thebonding material 30 have different functions. Therefore, mixing or bringing into contact these materials may prevent them from functioning properly. In the semiconductor device of the second embodiment, the heatconductive material 22 and thebonding material 30 are prevented from being mixed or brought into contact with each other, since they are separated from each other by the coolingbody groove 12 a. - The following description of a semiconductor device in accordance with a third embodiment of the present invention will be primarily limited to the differences from the semiconductor device of the first embodiment in order to avoid undue repetition.
FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment. In this semiconductor device, abonding material 40 is formed to extend to cover the side surfaces 18 a of the moldedresin 18. Further, the surface of the heatconductive portion 16 in contact with the heatconductive material 22 and thebottom surface 18 b of the moldedresin 18 form a single plane. - In the semiconductor device of the third embodiment, since the
bonding material 40 extends to cover the side surfaces 18 a of the moldedresin 18, the bonding strength of thebonding material 40 between thesemiconductor module 14 and the coolingbody 12 is increased. Further, since the surface of the heatconductive portion 16 in contact with the heatconductive material 22 and thebottom surface 18 b of the moldedresin 18 form a single plane, the gap between thebottom surface 18 b and the coolingbody 12 is narrowed, making it easier to form thebonding material 40, which extends to cover the side surfaces 18 a of the moldedresin 18. -
FIG. 9 is a cross-sectional view showing a variation of the semiconductor device of the third embodiment. In this variation, the outer circumferential bottom edge of the moldedresin 18 has been notched to form side surfaces 18 c. Abonding material 50 is formed to extend to cover these side surfaces 18 c. As a result of this configuration, the bonding strength between thesemiconductor module 14 and the coolingbody 12 can be increased by using an amount of bonding material smaller than that used in the semiconductor device described above with reference toFIG. 8 . - The following description of a semiconductor device in accordance with a fourth embodiment of the present invention will be primarily limited to the differences from the semiconductor device of the first embodiment in order to avoid undue repetition.
FIG. 10 is a cross-sectional view of the semiconductor device of the fourth embodiment. In this semiconductor device, aresin groove 18 d is formed in the surface of the moldedresin 18 facing the coolingbody 12. Abonding material 60 is formed to fill theresin groove 18 d. In the semiconductor device of the fourth embodiment, since thebonding material 60 is formed to fill theresin groove 18 d of the moldedresin 18, the bonding strength of thebonding material 60 between thesemiconductor module 14 and the coolingbody 12 is increased. - The following description of a semiconductor device and a method of manufacture thereof in accordance with a fifth embodiment of the present invention will be primarily limited to the differences from the semiconductor device of the first embodiment in order to avoid undue repetition.
FIG. 11 is a cross-sectional view of the semiconductor device of the fifth embodiment. In this semiconductor device, abonding material 70 has aprojection 70 a which is in contact with a portion of the inner walls of theresin groove 18 d. - The method of manufacturing a semiconductor device in accordance with the fifth embodiment will now be described.
FIG. 12 is a cross-sectional view showing the way in which the cooling body and the semiconductor module of the semiconductor device of the fifth embodiment are integrally secured together. In this process, first the heatconductive material 22 is formed on the surface of the coolingbody 12. Next, thebonding material 70 having theprojection 70 a is formed on the surface of the coolingbody 12. Thebonding material 70 is formed at a distance from the heatconductive material 22. Thesemiconductor module 14 is then formed, which has the heatconductive portion 16 formed of metal and the moldedresin 18 having a surface at which the heatconductive portion 16 is exposed. Theresin groove 18 d is then formed in the moldedresin 18. It should be noted that the order of the above process steps may be varied where appropriate. - Next, the cooling
body 12 and thesemiconductor module 14 are integrally secured together. In this process step, the coolingbody 12 and thesemiconductor module 14 are integrally secured together in such a manner that theprojection 70 a is in contact with inner walls of theresin groove 18 d, and that the heatconductive portion 16 overlaps and is in contact with the heatconductive material 22. At that time, the coolingbody 12 and thesemiconductor module 14 are aligned with each other by inserting theprojection 70 a into theresin groove 18 d. - In the semiconductor device manufacturing method of the fifth embodiment, the cooling
body 12 and thesemiconductor module 14 are integrally secured together using theprojection 70 a as an alignment guide, making it possible to increase the accuracy of alignment of the components in the semiconductor device. Further, since theprojection 70 a is in contact with inner walls of theresin groove 18 d, the bonding strength between thesemiconductor module 14 and the coolingbody 12 is increased. Further, since thebonding material 70 is spaced apart from the heatconductive material 22, even if a portion of thebonding material 70 diffuses toward the heatconductive material 22, that portion is retained or trapped in theresin groove 18 d, thereby preventing thebonding material 70 from reaching and mixing with the heatconductive material 22. - The semiconductor device manufacturing method of the fifth embodiment is characterized in that the cooling
body 12 and thesemiconductor module 14 are aligned with each other using theprojection 70 a when integrally securing them together, and that theprojection 70 a is brought into bonding engagement with theresin groove 18 d in order to increase the bonding strength between thesemiconductor module 14 and the coolingbody 12. It should be noted that thebonding material 70 need not necessarily be formed at a distance from the heatconductive material 22. - The semiconductor devices described in connection with the second and subsequent embodiments are susceptible of alterations at least similar to those that can be made to the semiconductor device of the first embodiment. Further, features of different embodiments may be combined where appropriate.
- In accordance with the present invention, both bonding material and heat conductive material are formed between the semiconductor module and the cooling body in a semiconductor device, making it possible to attach the semiconductor module to the cooling body with substantial bonding strength and adequately cool the semiconductor module while reducing the number of parts in the semiconductor device.
- Obviously many modifications and variations of the present invention are possible in the light of the above teachings. It is therefore to be understood that within the scope of the appended claims the invention may be practiced otherwise than as specifically described.
- The entire disclosure of a Japanese Patent Application No. 2011-184800, filed on Aug. 26, 2011 including specification, claims, drawings and summary, on which the Convention priority of the present application is based, are incorporated herein by reference in its entirety.
Claims (10)
1. A semiconductor device comprising:
a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which said heat conductive portion is exposed;
a cooling body secured to said semiconductor module by means of bonding material; and
heat conductive material formed between and thermally coupling said heat conductive portion and said cooling body.
2. The semiconductor device according to claim 1 , wherein:
said semiconductor module includes a semiconductor element encapsulated with said molded resin;
said bonding material is formed of insulating material;
said bonding material is formed to separate said heat conductive portion and said heat conductive material from the outside; and
said heat conductive portion is insulated from said semiconductor element.
3. The semiconductor device according to claim 1 , wherein:
said cooling body has a cooling body groove formed therein; and
said heat conductive material is separated from said bonding material by said cooling body groove.
4. The semiconductor device according to claim 1 , wherein said bonding material is formed to extend to cover a side surface of said molded resin.
5. The semiconductor device according to claim 1 , wherein:
said molded resin has a resin groove formed in a surface thereof facing said cooling body; and
said bonding material is formed to fill said resin groove.
6. The semiconductor device according to claim 1 , wherein:
said bonding material is in contact with said molded resin; and
the surface of said molded resin in contact with said bonding material has a greater surface roughness than the surfaces of said molded resin which are not in contact with said bonding material.
7. The semiconductor device according to claim 1 , wherein:
said bonding material is in contact with said molded resin; and
the portion of said molded resin in contact with said bonding material is more hydrophilic than the portions of said molded resin which are not in contact with said bonding material.
8. The semiconductor device according to claim 1 , wherein said heat conductive material is formed of electrically conductive material.
9. The semiconductor device according to claim 1 , wherein said heat conductive material is formed of silicone grease.
10. A method of manufacturing a semiconductor device, comprising the steps of:
forming heat conductive material on a surface of a cooling body;
forming bonding material on said surface of said cooling body, said bonding material having a projection;
forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of said molded resin; and
integrally securing said cooling body and said semiconductor module together in such a manner that said projection is in contact with an inner wall of said resin groove, and that said heat conductive portion overlaps and is in contact with said heat conductive material.
Priority Applications (1)
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US14/806,303 US11088045B2 (en) | 2011-08-26 | 2015-07-22 | Semiconductor device having a cooling body with a groove |
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JP2011184800A JP5747737B2 (en) | 2011-08-26 | 2011-08-26 | Semiconductor device and manufacturing method thereof |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3506345A1 (en) * | 2017-12-26 | 2019-07-03 | Joinset Co., Ltd | Thermally conductive member |
US10461012B2 (en) | 2014-03-19 | 2019-10-29 | Fuji Electric Co., Ltd. | Semiconductor module with reinforcing board |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5669917B1 (en) * | 2013-11-01 | 2015-02-18 | 三菱電機株式会社 | Power supply |
US10049960B2 (en) | 2014-01-06 | 2018-08-14 | Mitsubishi Electric Corporation | Semiconductor device |
JP6249829B2 (en) | 2014-03-10 | 2017-12-20 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
JP6361731B2 (en) | 2014-07-09 | 2018-07-25 | 三菱電機株式会社 | Semiconductor device |
WO2016056286A1 (en) * | 2014-10-10 | 2016-04-14 | 信越化学工業株式会社 | Semiconductor device including heat-conductive silicone grease |
JP2018026370A (en) * | 2014-11-13 | 2018-02-15 | 株式会社日立製作所 | Power semiconductor module |
JP6707328B2 (en) * | 2015-09-01 | 2020-06-10 | ローム株式会社 | Power module, heat dissipation structure of power module, and joining method of power module |
DE102020116231A1 (en) | 2020-06-19 | 2021-12-23 | Seg Automotive Germany Gmbh | Arrangement with two components that are electrically isolated from one another |
DE102020212532A1 (en) | 2020-10-05 | 2022-04-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Device with a component, a heat sink and a thermally conductive layer |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050093137A1 (en) * | 2003-11-04 | 2005-05-05 | Jun Ishikawa | Semiconductor apparatus |
US20090315192A1 (en) * | 2008-06-24 | 2009-12-24 | Elpida Memory, Inc. | Method of manufacturing semiconductor device and semiconductor device |
US20110042784A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Mechanical Barrier Element for Improved Thermal Reliability of Electronic Components |
US20110241161A1 (en) * | 2008-02-11 | 2011-10-06 | Globalfoundries Inc. | Chip package with channel stiffener frame |
US20120001318A1 (en) * | 2010-06-30 | 2012-01-05 | Denso Corporation | Semiconductor device |
US20120043662A1 (en) * | 2010-02-01 | 2012-02-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device production method and semiconductor device |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758254A (en) | 1993-08-19 | 1995-03-03 | Fujitsu Ltd | Multichip module and manufacture thereof |
JPH10337A (en) | 1996-06-19 | 1998-01-06 | Nippon Steel Corp | Catalytic converter made of metal and its production |
US5838545A (en) * | 1996-10-17 | 1998-11-17 | International Business Machines Corporation | High performance, low cost multi-chip modle package |
JPH11111897A (en) * | 1997-10-03 | 1999-04-23 | Hitachi Ltd | Multi-chip semiconductor device |
JP3553849B2 (en) | 2000-03-07 | 2004-08-11 | 富士電機デバイステクノロジー株式会社 | Semiconductor device and manufacturing method thereof |
TW445615B (en) | 2000-08-04 | 2001-07-11 | Siliconware Precision Industries Co Ltd | Semiconductor package with enhanced heat dissipation function |
JP2002110872A (en) * | 2000-09-27 | 2002-04-12 | Kyocera Corp | Wiring board and wiring board module |
JP3807354B2 (en) * | 2001-08-06 | 2006-08-09 | 株式会社デンソー | Semiconductor device |
JP2003060137A (en) | 2001-08-08 | 2003-02-28 | Ibiden Co Ltd | Substrate for module |
DE10164494B9 (en) * | 2001-12-28 | 2014-08-21 | Epcos Ag | Encapsulated low-profile device and method of manufacture |
JP3590039B2 (en) * | 2002-07-24 | 2004-11-17 | 沖電気工業株式会社 | Semiconductor device and manufacturing method thereof |
JP2004103846A (en) * | 2002-09-10 | 2004-04-02 | Mitsubishi Electric Corp | Semiconductor device for electric power |
JP3740116B2 (en) | 2002-11-11 | 2006-02-01 | 三菱電機株式会社 | Molded resin encapsulated power semiconductor device and manufacturing method thereof |
JP2006100337A (en) | 2004-09-28 | 2006-04-13 | Matsushita Electric Ind Co Ltd | Process for producing dielectric thin film |
JP4583122B2 (en) | 2004-09-28 | 2010-11-17 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
JP4046120B2 (en) | 2005-01-27 | 2008-02-13 | 三菱電機株式会社 | Insulating sheet manufacturing method and power module manufacturing method |
US7265445B2 (en) * | 2005-03-23 | 2007-09-04 | Texas Instruments Incorporated | Integrated circuit package |
JP2006344770A (en) | 2005-06-09 | 2006-12-21 | Mitsubishi Electric Corp | Semiconductor module and semiconductor device |
CN1941332A (en) * | 2005-09-29 | 2007-04-04 | 沛亨半导体股份有限公司 | Structure for binding local polymer materials and chip |
JP4766050B2 (en) * | 2005-11-02 | 2011-09-07 | パナソニック株式会社 | Method for manufacturing electronic circuit device |
TWI355048B (en) * | 2006-12-13 | 2011-12-21 | Siliconware Precision Industries Co Ltd | Heat-dissipation semiconductor package and heat-di |
US7635916B2 (en) * | 2007-03-23 | 2009-12-22 | Honeywell International Inc. | Integrated circuit package with top-side conduction cooling |
JP5233170B2 (en) * | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | LIGHT EMITTING DEVICE, RESIN MOLDED BODY FORMING LIGHT EMITTING DEVICE, AND METHOD FOR PRODUCING THEM |
KR101004842B1 (en) * | 2008-07-25 | 2010-12-28 | 삼성전기주식회사 | Electronic Chip Module |
JP5071405B2 (en) | 2009-02-13 | 2012-11-14 | 三菱電機株式会社 | Power semiconductor device |
JP4844904B2 (en) * | 2009-03-27 | 2011-12-28 | Tdk株式会社 | Multilayer wiring board and manufacturing method thereof |
JP5504683B2 (en) * | 2009-04-27 | 2014-05-28 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
JP5420313B2 (en) * | 2009-05-20 | 2014-02-19 | オリンパス株式会社 | Optical component having bonded optical element and method for manufacturing the same |
US8362607B2 (en) * | 2009-06-03 | 2013-01-29 | Honeywell International Inc. | Integrated circuit package including a thermally and electrically conductive package lid |
JP5306171B2 (en) * | 2009-12-25 | 2013-10-02 | 三菱電機株式会社 | Semiconductor device |
CN101770997A (en) * | 2010-01-29 | 2010-07-07 | 江苏长电科技股份有限公司 | Down and up arranged resin circuit board and chip packaging structure with radiation block |
JP5455720B2 (en) * | 2010-03-12 | 2014-03-26 | パナソニック株式会社 | Optical semiconductor package and optical semiconductor device |
JP5445341B2 (en) | 2010-06-11 | 2014-03-19 | 三菱電機株式会社 | Semiconductor device |
JP5257817B2 (en) | 2010-06-15 | 2013-08-07 | 三菱電機株式会社 | Semiconductor device |
TWI520386B (en) * | 2010-07-29 | 2016-02-01 | 神基科技股份有限公司 | Structure of led assembly and manufacturing method thereof |
-
2011
- 2011-08-26 JP JP2011184800A patent/JP5747737B2/en active Active
-
2012
- 2012-04-25 US US13/455,577 patent/US20130049186A1/en not_active Abandoned
- 2012-08-22 DE DE102012214917.1A patent/DE102012214917B4/en active Active
- 2012-08-24 CN CN201210304452.XA patent/CN102956569B/en active Active
-
2015
- 2015-07-22 US US14/806,303 patent/US11088045B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050093137A1 (en) * | 2003-11-04 | 2005-05-05 | Jun Ishikawa | Semiconductor apparatus |
US20110241161A1 (en) * | 2008-02-11 | 2011-10-06 | Globalfoundries Inc. | Chip package with channel stiffener frame |
US20090315192A1 (en) * | 2008-06-24 | 2009-12-24 | Elpida Memory, Inc. | Method of manufacturing semiconductor device and semiconductor device |
US20110042784A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Mechanical Barrier Element for Improved Thermal Reliability of Electronic Components |
US20120043662A1 (en) * | 2010-02-01 | 2012-02-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device production method and semiconductor device |
US20120001318A1 (en) * | 2010-06-30 | 2012-01-05 | Denso Corporation | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10461012B2 (en) | 2014-03-19 | 2019-10-29 | Fuji Electric Co., Ltd. | Semiconductor module with reinforcing board |
EP3506345A1 (en) * | 2017-12-26 | 2019-07-03 | Joinset Co., Ltd | Thermally conductive member |
Also Published As
Publication number | Publication date |
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CN102956569A (en) | 2013-03-06 |
JP5747737B2 (en) | 2015-07-15 |
JP2013046016A (en) | 2013-03-04 |
DE102012214917A1 (en) | 2013-02-28 |
US11088045B2 (en) | 2021-08-10 |
US20150325493A1 (en) | 2015-11-12 |
DE102012214917B4 (en) | 2018-09-27 |
CN102956569B (en) | 2016-01-13 |
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