KR20150048459A - Power Module Package - Google Patents

Power Module Package Download PDF

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Publication number
KR20150048459A
KR20150048459A KR1020130128555A KR20130128555A KR20150048459A KR 20150048459 A KR20150048459 A KR 20150048459A KR 1020130128555 A KR1020130128555 A KR 1020130128555A KR 20130128555 A KR20130128555 A KR 20130128555A KR 20150048459 A KR20150048459 A KR 20150048459A
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KR
South Korea
Prior art keywords
lead frame
substrate
power module
module package
molding
Prior art date
Application number
KR1020130128555A
Other languages
Korean (ko)
Inventor
김종만
Original Assignee
삼성전기주식회사
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Priority to KR1020130128555A priority Critical patent/KR20150048459A/en
Publication of KR20150048459A publication Critical patent/KR20150048459A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The present invention relates to a power module package and a manufacturing method thereof. According to an embodiment of the present invention, the power module package comprises: a substrate having one surface and the other surface; a lead frame separated at regular distance with one surface of the substrate, having one side and the other side, and where one side protrudes to the inside, and the other side protrudes to the outside; a semiconductor device mounted on the lead frame; and a molding unit interposed between one surface of the substrate and the lead frame, and formed to expose the other surface of the substrate by covering one surface of the substrate, the lead frame, and the semiconductor device.

Description

A power module package {Power Module Package}

The present invention relates to a power module package.

With the rapid development of materials, designs and processes for the fabrication of power semiconductor devices, power module packages driven at high currents and voltages are also rapidly evolving.

The heat dissipation characteristics of the substrate in the development of the power module is very important in terms of module reliability including the lifetime of the power device (IGBT, Diode).

Therefore, in order to improve the heat radiation characteristics of the substrate, a structure in which a metal material is used as a base of a substrate and a copper foil for forming a metal base and a circuit is bonded to a prepreg or a metal oxide layer I am using it.

In order to bond the devices to the circuit pattern of the metal substrate by soldering, the substrate must be raised above the solder melting temperature. The device is subjected to a reflow process in which the device is soldered and then cooled to room temperature.

Japanese Patent Application Laid-Open No. 2006-179732

According to an embodiment of the present invention, there is provided a structure in which a resin is interposed between a metal substrate on which an element is mounted and a lead frame by an injection molding method to thereby improve warpage of the metal substrate.

Another object of the present invention is to provide a structure effective for heat dissipation by embedding a lead frame by forming one or more cavities on a metal substrate.

There is provided a structure that improves the sagging or deformation of the lead frame by deforming one side structure of the lead frame.

A power module package according to an embodiment of the present invention includes a substrate having one side and the other side,

A lead frame spaced a predetermined distance from the one surface of the substrate and having one side and the other side and the other side projecting to the outside; a semiconductor element mounted on the lead frame; And a molding part which is interposed between the frame and covers the one surface of the substrate, the lead frame and the semiconductor element to expose the other surface of the substrate.

Here, the substrate may be flat on one side.

Also, one or more cavities may be formed on one side of the substrate.

In addition, the cavity of the substrate may be formed at a portion adjacent to the lead frame so as to embed the lead frame.

Further, the substrate may be a conductive metal material.

Further, the lead frame may have one or more stepped portions.

In addition, one end of the lead frame may be thicker than the other end.

A bending portion may be formed at one end of the lead frame.

Further, the material of the molding part may be a thermoplastic resin or a thermosetting resin.

Further, a thermosetting insulating resin layer containing at least one kind of inorganic filler may further intervene between the substrate and the lead frame.

The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.

Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor can properly define the concept of a term in order to describe its invention in the best possible way Should be construed in accordance with the principles and meanings and concepts consistent with the technical idea of the present invention.

The power module package according to the embodiment of the present invention has the effect of improving the warpage of the metal substrate by mounting the semiconductor element on the lead frame and bonding the metal substrate to the lead frame at a temperature lower than the reflow temperature.

In addition, since the molding part is integrally formed with the insulating resin between the substrate and the lead frame, it is not necessary to form an insulating layer between the substrate and the lead frame, so that the process is simplified and the process cost is reduced.

Further, it is also effective in heat dissipation with a structure in which one or more cavities are formed on a metal substrate to embed a lead frame.

Further, there is an effect that the one side structure of the lead frame is modified, and the lead frame is prevented from being struck or deformed.

1 is a cross-sectional view illustrating a structure of a power module semiconductor package according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a structure of a power module semiconductor package according to an embodiment of the present invention.
3 is a cross-sectional view illustrating a structure of a power module semiconductor package according to an embodiment of the present invention.
4 is a cross-sectional view illustrating a structure of a power module semiconductor package according to an embodiment of the present invention.
5 is an enlarged perspective view of part A of FIG.
6 is a cross-sectional view illustrating a structure of a power module semiconductor package according to an embodiment of the present invention.
7 is an enlarged perspective view of part B of Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The objectives, specific advantages and novel features of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements are assigned the same number as much as possible even if they are displayed on different drawings. It will be further understood that terms such as " first, "" second," " one side, "" other," and the like are used to distinguish one element from another, no. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description of the present invention, detailed description of related arts which may unnecessarily obscure the gist of the present invention will be omitted.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Power module package

1st Example

1 is a sectional view showing the structure of a power module package according to a first embodiment of the present invention.

Referring to Figure 1,

A semiconductor device comprising: a substrate having one surface and one surface; a lead frame spaced apart from the surface of the substrate by a predetermined distance, the lead frame having one side and the other side, And a molding part interposed between one side of the substrate and the lead frame, the molding part covering one side of the substrate, the lead frame and the semiconductor element to expose the other side of the substrate.

Here, the substrate has one surface and the other surface.

One side is the side facing the lead frame and the side belonging to the inside of the power module package. The one surface is flat and covered with an insulating resin.

The other surface of the substrate is a surface exposed to the outside, and serves to discharge the heat of the semiconductor element to the outside.

Further, the substrate may be made of any one selected from the group consisting of aluminum (Al), an aluminum alloy (Al Alloy), copper (Cu), iron (Fe), iron-nickel alloy (Fe-Ni alloy) But is not limited thereto.

Although not shown in the drawing, the power module package according to the present embodiment may further include a heatsink bonded to the other surface of the substrate, that is, the exposed portion of the metal layer.

The heat sink may include a plurality of heat dissipating fins for dissipating heat generated from the semiconductor device into the air.

The heatsink is not particularly limited, but is generally made of copper (Cu) or tin (Sn) or coated with this material, which is excellent in heat transfer and easily joins with the substrate .

Here, the lead frame has one side and the other side.

One side of the lead frame belongs to the inside of the power module package and the other side protrudes to the outside. Although the stepped portion is not formed in the lead frame in this figure, one or more stepped portions may be additionally formed.

At this time, the lead frame may be made of any one selected from copper (Cu), iron (Fe), and iron-nickel alloy (Fe-Ni alloy), but is not limited thereto.

Further, the semiconductor element is mounted on the lead frame by soldering bonding.

Here, the semiconductor device may be a power source, and the power source may be a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, An inverter, a converter, or a combination of high power semiconductor devices or diodes thereof.

Here, the bonding material between the lead frame and the semiconductor element may be a solder or a conductive epoxy. However, the bonding material is not particularly limited to this, and it is general to use an adhesive material having a high thermal conductivity in order to effectively discharge heat.

At this time, the substrate and the lead frame are separated from each other, and an insulating resin intervenes therebetween.

The molding forming method may be an insert mold.

Here, by interposing the insulating resin therebetween, there is an effect that the process is simplified and the cost is reduced with the structure in which the conventional process of forming the insulating layer on the upper surface of the metal substrate and joining the lead frame is not necessary.

Usually, an injection mold is used for the insert mold.

Here, the molding member may be formed of a thermoplastic resin. Thermoplastic resins are resins that are easy to recycle and have a short molding time required for curing than thermosetting resins.

Heat shielding due to molding is performed, so that the heat radiating effect can be further improved. The method of bonding the substrate and the lead frame by injection molding using a thermoplastic resin also has an effect of preventing warpage of the substrate by progressing the process while keeping the process temperature constant.

After the injection molding with the thermoplastic resin, an incapsulation process using a thermosetting resin may be additionally performed.

At this time, a silicone gel or an epoxy molding compound (EMC) may be used as the sealing member, but the present invention is not limited thereto.

Second Example

2 is a cross-sectional view illustrating a structure of a power module package according to a second embodiment of the present invention.

Referring to Figure 2,

A semiconductor device comprising: a substrate having one surface and one surface; a lead frame spaced apart from the surface of the substrate by a predetermined distance, the lead frame having one side and the other side, And a molding part interposed between one surface of the substrate and the lead frame, the molding part covering one surface of the substrate, the lead frame, and the semiconductor element to expose the other surface of the substrate.

Here, the substrate has one surface and the other surface.

One side is the side facing the lead frame and the side belonging to the inside of the power module package. The one side has one or more cavities and is covered with an insulating resin.

The other surface of the substrate is a surface exposed to the outside, and serves to discharge the heat of the semiconductor element to the outside.

Further, the substrate may be made of any one selected from the group consisting of aluminum (Al), an aluminum alloy (Al Alloy), copper (Cu), iron (Fe), iron-nickel alloy (Fe-Ni alloy) But is not limited thereto.

Although not shown in the drawing, the power module package according to the present embodiment may further include a heatsink bonded to the other surface of the substrate, that is, the exposed portion of the metal layer.

The heat sink may include a plurality of heat dissipating fins for dissipating heat generated from the semiconductor device into the air.

The heatsink is not particularly limited, but is generally made of copper (Cu) or tin (Sn) or coated with this material, which is excellent in heat transfer and easily joins with the substrate .

Here, the lead frame has one side and the other side.

One side of the lead frame belongs to the inside of the power module package and the other side protrudes to the outside. In this drawing, the lead frame is formed inside the power module package, and has one stepped portion bounded from one side embedded in the cavity of the substrate and the other side protruding to the outside. However, one or more stepped portions may be further formed.

At this time, the lead frame may be made of any one selected from copper (Cu), iron (Fe), and iron-nickel alloy (Fe-Ni alloy), but is not limited thereto.

Further, the semiconductor element is mounted on the lead frame by soldering bonding.

Here, the semiconductor device may be a power source, and the power source may be a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, An inverter, a converter, or a combination of high power semiconductor devices or diodes thereof.

Here, the bonding material between the lead frame and the semiconductor element may be a solder or a conductive epoxy. However, the bonding material is not particularly limited to this, and it is general to use an adhesive material having a high thermal conductivity in order to effectively discharge heat.

At this time, the substrate and the lead frame are separated from each other, and an insulating resin intervenes therebetween.

The molding forming method may be an insert mold.

Here, by interposing the insulating resin therebetween, there is an effect that the process is simplified and the cost is reduced with the structure in which the conventional process of forming the insulating layer on the upper surface of the metal substrate and joining the lead frame is not necessary.

Usually, an injection mold is used for the insert mold.

Here, the molding member may be formed of a thermoplastic resin. Thermoplastic resins are resins that are easy to recycle and have a short molding time required for curing than thermosetting resins.

Heat shielding due to molding is performed, so that the heat radiating effect can be further improved. The method of bonding the substrate and the lead frame by injection molding using a thermoplastic resin also has an effect of preventing warpage of the substrate by progressing the process while keeping the process temperature constant.

After the injection molding with the thermoplastic resin, an incapsulation process using a thermosetting resin may be additionally performed.

At this time, a silicone gel or an epoxy molding compound (EMC) may be used as the sealing member, but the present invention is not limited thereto.

Third Example

3 is a cross-sectional view illustrating a structure of a power module package according to a third embodiment of the present invention.

Referring to Figure 3,

A semiconductor device comprising: a substrate having one surface and one surface; a lead frame spaced apart from the surface of the substrate by a predetermined distance, the lead frame having one side and the other side, And a molding part interposed between one surface of the substrate and the lead frame, the molding part covering one surface of the substrate, the lead frame, and the semiconductor element to expose the other surface of the substrate.

Here, the substrate has one surface and the other surface.

One side is the side facing the lead frame and the side belonging to the inside of the power module package. The one surface is flat, and a thermosetting resin layer containing a filler having an excellent thermal conductivity is formed on the upper surface of the metal substrate, and is partially bonded to the lead frame and the remaining portion is bonded to the molding member.

At this time, by bonding the thermosetting resin layer containing the filler having excellent thermal conductivity to the metal substrate, it is possible to obtain a heat radiating effect superior to that obtained by injection molding with a thermoplastic resin.

The other surface of the substrate is a surface exposed to the outside, and serves to discharge the heat of the semiconductor element to the outside.

Further, the substrate may be made of any one selected from the group consisting of aluminum (Al), an aluminum alloy (Al Alloy), copper (Cu), iron (Fe), iron-nickel alloy (Fe-Ni alloy) But is not limited thereto.

Although not shown in the drawing, the power module package according to the present embodiment may further include a heatsink bonded to the other surface of the substrate, that is, the exposed portion of the metal layer.

The heat sink may include a plurality of heat dissipating fins for dissipating heat generated from the semiconductor device into the air.

The heatsink is not particularly limited, but is generally made of copper (Cu) or tin (Sn) or coated with this material, which is excellent in heat transfer and easily joins with the substrate .

Here, the lead frame has one side and the other side.

One side of the lead frame belongs to the inside of the power module package and the other side protrudes to the outside. In this drawing, one step portion is formed in the lead frame. However, one or more stepped portions may be further formed.

At this time, the lead frame may be made of any one selected from copper (Cu), iron (Fe), and iron-nickel alloy (Fe-Ni alloy), but is not limited thereto.

Further, the semiconductor element is mounted on the lead frame by soldering bonding.

Here, the semiconductor device may be a power source, and the power source may be a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, An inverter, a converter, or a combination of high power semiconductor devices or diodes thereof.

Here, the bonding material between the lead frame and the semiconductor element may be a solder or a conductive epoxy. However, the bonding material is not particularly limited to this, and it is general to use an adhesive material having a high thermal conductivity in order to effectively discharge heat.

At this time, the substrate and the lead frame are separated from each other, and an insulating resin intervenes therebetween.

The molding forming method may be an insert mold.

Here, by interposing the insulating resin therebetween, there is an effect that the process is simplified and the cost is reduced with the structure in which the conventional process of forming the insulating layer on the upper surface of the metal substrate and joining the lead frame is not necessary.

Usually, an injection mold is used for the insert mold.

Here, the molding member may be formed of a thermoplastic resin. Thermoplastic resins are resins that are easy to recycle and have a short molding time required for curing than thermosetting resins.

Heat shielding due to molding is performed, so that the heat radiating effect can be further improved. The method of bonding the substrate and the lead frame by injection molding using a thermoplastic resin also has an effect of preventing warpage of the substrate by progressing the process while keeping the process temperature constant.

After the injection molding with the thermoplastic resin, an incapsulation process using a thermosetting resin may be additionally performed.

At this time, a silicone gel or an epoxy molding compound (EMC) may be used as the sealing member, but the present invention is not limited thereto.

Fourth Example

4 is a cross-sectional view illustrating a structure of a power module package according to a fourth embodiment of the present invention.

Referring to Figure 4,

A semiconductor device comprising: a substrate having one surface and one surface; a lead frame spaced apart from the surface of the substrate by a predetermined distance, the lead frame having one side and the other side, And a molding part interposed between one side of the substrate and the lead frame, the molding part covering one side of the substrate, the lead frame and the semiconductor element to expose the other side of the substrate.

Here, the substrate has one surface and the other surface.

One side is the side facing the lead frame and the side belonging to the inside of the power module package. The one side has one or more cavities and is covered with an insulating resin.

The other surface of the substrate is a surface exposed to the outside, and serves to discharge the heat of the semiconductor element to the outside.

Further, the substrate may be made of any one selected from the group consisting of aluminum (Al), an aluminum alloy (Al Alloy), copper (Cu), iron (Fe), iron-nickel alloy (Fe-Ni alloy) But is not limited thereto.

Although not shown in the drawing, the power module package according to the present embodiment may further include a heatsink bonded to the other surface of the substrate, that is, the exposed portion of the metal layer.

The heat sink may include a plurality of heat dissipating fins for dissipating heat generated from the semiconductor device into the air.

The heatsink is not particularly limited, but is generally made of copper (Cu) or tin (Sn) or coated with this material, which is excellent in heat transfer and easily joins with the substrate .

Here, the lead frame has one side and the other side.

One side of the lead frame belongs to the inside of the power module package and the other side protrudes to the outside. In this drawing, the lead frame is formed inside the power module package, and has one stepped portion bounded from one side embedded in the cavity of the substrate and the other side protruding to the outside. However, one or more stepped portions may be further formed.

Further, in the power module semiconductor, a structure in which the thickness of the lead frame is changed in order to prevent lead frame stuck can be confirmed.

Referring to Figure 5,

4, the thickness of one end portion of the lead frame is increased to prevent the lead frame from being squeezed.

Such thickness variation is applicable not only to this embodiment but also to other embodiments.

At this time, the lead frame may be made of any one selected from copper (Cu), iron (Fe), and iron-nickel alloy (Fe-Ni alloy), but is not limited thereto.

Further, the semiconductor element is mounted on the lead frame by soldering bonding.

Here, the semiconductor device may be a power source, and the power source may be a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, An inverter, a converter, or a combination of high power semiconductor devices or diodes thereof.

Here, the bonding material between the lead frame and the semiconductor element may be a solder or a conductive epoxy. However, the bonding material is not particularly limited to this, and it is general to use an adhesive material having a high thermal conductivity in order to effectively discharge heat.

At this time, the substrate and the lead frame are separated from each other, and an insulating resin intervenes therebetween.

The molding forming method may be an insert mold.

Here, by interposing the insulating resin therebetween, there is an effect that the process is simplified and the cost is reduced with the structure in which the conventional process of forming the insulating layer on the upper surface of the metal substrate and joining the lead frame is not necessary.

Usually, an injection mold is used for the insert mold.

Here, the molding member may be formed of a thermoplastic resin. Thermoplastic resins are resins that are easy to recycle and have a short molding time required for curing than thermosetting resins.

Heat shielding due to molding is performed, so that the heat radiating effect can be further improved. The method of bonding the substrate and the lead frame by injection molding using a thermoplastic resin also has an effect of preventing warpage of the substrate by progressing the process while keeping the process temperature constant.

After the injection molding with the thermoplastic resin, an incapsulation process using a thermosetting resin may be additionally performed.

At this time, a silicone gel or an epoxy molding compound (EMC) may be used as the sealing member, but the present invention is not limited thereto.

Fifth Example

6 is a cross-sectional view illustrating a structure of a power module package according to a fifth embodiment of the present invention.

Referring to FIG. 6,

A semiconductor device comprising: a substrate having one surface and one surface; a lead frame spaced apart from the surface of the substrate by a predetermined distance, the lead frame having one side and the other side, And a molding part interposed between one side of the substrate and the lead frame, the molding part covering one side of the substrate, the lead frame and the semiconductor element to expose the other side of the substrate.

Here, the substrate has one surface and the other surface.

One side is the side facing the lead frame and the side belonging to the inside of the power module package. The one side has one or more cavities and is covered with an insulating resin.

The other surface of the substrate is a surface exposed to the outside, and serves to discharge the heat of the semiconductor element to the outside.

Further, the substrate may be made of any one selected from the group consisting of aluminum (Al), an aluminum alloy (Al Alloy), copper (Cu), iron (Fe), iron-nickel alloy (Fe-Ni alloy) But is not limited thereto.

Although not shown in the drawing, the power module package according to the present embodiment may further include a heatsink bonded to the other surface of the substrate, that is, the exposed portion of the metal layer.

The heat sink may include a plurality of heat dissipating fins for dissipating heat generated from the semiconductor device into the air.

The heatsink is not particularly limited, but is generally made of copper (Cu) or tin (Sn) or coated with this material, which is excellent in heat transfer and easily joins with the substrate .

Here, the lead frame has one side and the other side.

One side of the lead frame belongs to the inside of the power module package and the other side protrudes to the outside. In this drawing, the lead frame is formed inside the power module package, and has one stepped portion bounded from one side embedded in the cavity of the substrate and the other side protruding to the outside. However, one or more stepped portions may be further formed.

Further, a structure in which a bending portion is formed in a part of the lead frame to prevent lead frame stuck in the power module semiconductor can be confirmed.

Referring to Figure 7,

6, a bending portion at one end portion of the lead frame is formed to prevent the lead frame from being stuck.

Such a structural change can be applied not only to this embodiment but also to other embodiments.

At this time, the lead frame may be made of any one selected from copper (Cu), iron (Fe), and iron-nickel alloy (Fe-Ni alloy), but is not limited thereto.

Further, the semiconductor element is mounted on the lead frame by soldering bonding.

Here, the semiconductor device may be a power source, and the power source may be a silicon controlled rectifier (SCR), a power transistor, an insulated gate bipolar transistor (IGBT), a MOS transistor, a power rectifier, An inverter, a converter, or a combination of high power semiconductor devices or diodes thereof.

Here, the bonding material between the lead frame and the semiconductor element may be a solder or a conductive epoxy. However, the bonding material is not particularly limited to this, and it is general to use an adhesive material having a high thermal conductivity in order to effectively discharge heat.

At this time, the substrate and the lead frame are separated from each other, and an insulating resin intervenes therebetween.

The molding forming method may be an insert mold.

Here, by interposing the insulating resin therebetween, there is an effect that the process is simplified and the cost is reduced with the structure in which the conventional process of forming the insulating layer on the upper surface of the metal substrate and joining the lead frame is not necessary.

Usually, an injection mold is used for the insert mold.

Here, the molding member may be formed of a thermoplastic resin. Thermoplastic resins are resins that are easy to recycle and have a short molding time required for curing than thermosetting resins.

Heat shielding due to molding is performed, so that the heat radiating effect can be further improved. The method of bonding the substrate and the lead frame by injection molding using a thermoplastic resin also has an effect of preventing warpage of the substrate by progressing the process while keeping the process temperature constant.

After the injection molding with the thermoplastic resin, an incapsulation process using a thermosetting resin may be additionally performed.

At this time, a silicone gel or an epoxy molding compound (EMC) may be used as the sealing member, but the present invention is not limited thereto.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the present invention. It is obvious that the modification or improvement is possible.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

1000: Power module package
100: substrate
200: Lead frame
300: semiconductor element
301: Solder
400: molding part
401: Insulating resin layer

Claims (10)

A substrate having a first side and a second side;
A lead frame spaced apart from a surface of the substrate by a predetermined distance and having one side and the other side, the one side of the lead frame protruding into the inside and the other side protruding outward;
A semiconductor element mounted on the lead frame; And
A molding part interposed between one side of the substrate and the lead frame, the molding part covering one side of the substrate, the lead frame and the semiconductor element to expose the other side of the substrate;
Gt; power module package. ≪ / RTI >
The method according to claim 1,
Wherein the substrate is flat on one side.
The method according to claim 1,
Wherein the substrate has one or more cavities on one side.
The method of claim 3,
Wherein a cavity of the substrate is formed in an adjacent portion of the lead frame so as to embody the lead frame.
The method according to claim 1,
Wherein the substrate is a conductive metal material.
The method according to claim 1,
Wherein the lead frame has one or more stepped portions.
The method according to claim 1,
Wherein one end of the lead frame is thicker than the other end.
The method according to claim 1,
And a bending portion formed at one end of the lead frame.
The method according to claim 1,
Wherein the material of the molding part is a thermoplastic resin or a thermosetting resin.
The method according to claim 1,
Wherein a thermosetting insulating resin layer containing at least one kind of inorganic filler is interposed between the substrate and the lead frame.
KR1020130128555A 2013-10-28 2013-10-28 Power Module Package KR20150048459A (en)

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Application Number Priority Date Filing Date Title
KR1020130128555A KR20150048459A (en) 2013-10-28 2013-10-28 Power Module Package

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KR20150048459A true KR20150048459A (en) 2015-05-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170077541A (en) * 2015-12-28 2017-07-06 전자부품연구원 Power device module and manufacturing method thereoff
US11302597B2 (en) 2017-09-21 2022-04-12 Mitsubishi Electric Corporation Semiconductor device, and power conversion device including the semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170077541A (en) * 2015-12-28 2017-07-06 전자부품연구원 Power device module and manufacturing method thereoff
US11302597B2 (en) 2017-09-21 2022-04-12 Mitsubishi Electric Corporation Semiconductor device, and power conversion device including the semiconductor device

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