US20130049186A1 - Semiconductor device and method of manufacture thereof - Google Patents
Semiconductor device and method of manufacture thereof Download PDFInfo
- Publication number
- US20130049186A1 US20130049186A1 US13/455,577 US201213455577A US2013049186A1 US 20130049186 A1 US20130049186 A1 US 20130049186A1 US 201213455577 A US201213455577 A US 201213455577A US 2013049186 A1 US2013049186 A1 US 2013049186A1
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- Prior art keywords
- heat conductive
- semiconductor device
- cooling body
- bonding material
- molded resin
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 6
- 238000001816 cooling Methods 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000011347 resin Substances 0.000 claims abstract description 54
- 229920005989 resin Polymers 0.000 claims abstract description 54
- 239000004020 conductor Substances 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 claims abstract description 3
- 238000010168 coupling process Methods 0.000 claims abstract description 3
- 238000005859 coupling reaction Methods 0.000 claims abstract description 3
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 230000004075 alteration Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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Definitions
- Japanese Laid-Open Patent Publication No. 2006-100327 discloses a semiconductor device in which a semiconductor module formed by encapsulating a semiconductor element with resin is secured to a cooling fin (or cooling body) by means of screws.
- Japanese Laid-Open Patent Publication No. 2001-250890 also discloses related art.
- the semiconductor module In order to reduce the number of parts in such a semiconductor device, it is desirable to secure the semiconductor module to the cooling body without using screws or the like. To accomplish this, the semiconductor module must be secured to the cooling body by way of some adhesive or bonding material which is disposed therebetween. It should be noted that such material must have substantial heat conductivity, as well as providing substantial bonding strength. It has been found, however, that the use of a material suitable for securing the semiconductor module to the cooling body may result in insufficient cooling of the semiconductor module. On the other hand, the use of a material suitable for cooling the semiconductor module may result in inadequate securing of the semiconductor module to the cooling body.
- the present invention has been made to solve the above problems. It is, therefore, an object of the present invention to provide a semiconductor device which has a reduced number of parts, yet in which the semiconductor module is attached to a cooling body with substantial bonding strength and cooled adequately. Another object of the present invention is to provide a method of manufacturing such a semiconductor device.
- a semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.
- a method of manufacturing a semiconductor device includes the steps of forming heat conductive material on a surface of a cooling body, forming bonding material on the surface of the cooling body, the bonding material having a projection, forming a resin groove in a molded resin of a semiconductor module having a heat conductive portion which is formed of metal and which is exposed at a surface of the molded resin, and integrally securing the cooling body and the semiconductor module together in such a manner that the projection is in contact with an inner wall of the resin groove, and that the heat conductive portion overlaps and is in contact with the heat conductive material.
- FIG. 1 is a cross-sectional view of a semiconductor device in accordance with a first embodiment of the present invention
- FIG. 2 is a perspective view showing the way in which the semiconductor module of the semiconductor device of the first embodiment is secured to the cooling body;
- FIG. 3 is a cross-sectional view showing a variation of the semiconductor device of the first embodiment
- FIG. 4 is a cross-sectional view showing another variation of the semiconductor device of the first embodiment
- FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment
- FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment
- FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment
- FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment.
- FIG. 9 is a cross-sectional view showing a variation of the semiconductor device of the third embodiment.
- FIG. 10 is a cross-sectional view of the semiconductor device of the fourth embodiment.
- FIG. 11 is a cross-sectional view of the semiconductor device of the fifth embodiment.
- FIG. 12 is a cross-sectional view showing the way in which the cooling body and the semiconductor module of the semiconductor device of the fifth embodiment are integrally secured together.
- FIG. 1 is a cross-sectional view of a semiconductor device 10 in accordance with a first embodiment of the present invention.
- the semiconductor device 10 is provided with a cooling body 12 .
- the cooling body 12 is formed of metal, e.g., copper.
- a semiconductor module 14 is disposed above the cooling body 12 .
- the semiconductor module 14 has a heat conductive portion 16 formed of metal and a molded resin 18 having a surface at which the heat conductive portion 16 is exposed.
- the semiconductor module 14 is formed, e.g., by encapsulating a semiconductor element, such as an IGBT, with resin by means of transfer molding.
- a bonding material 20 and a heat conductive material 22 are formed between the semiconductor module 14 and the cooling body 12 .
- the bonding material 20 secures the molded resin 18 of the semiconductor module 14 to the cooling body 12 .
- the bonding material 20 is formed of insulating material.
- the heat conductive material 22 is formed between and thermally couples the heat conductive portion 16 and the cooling body 12 .
- the heat conductive material 22 is formed of electrically conductive material having excellent heat conductivity.
- FIG. 2 is a perspective view showing the way in which the semiconductor module of the semiconductor device of the first embodiment is secured to the cooling body.
- the bonding material 20 is formed to surround the heat conductive material 22 .
- the semiconductor module 14 is moved in the direction of the arrow of FIG. 2 and brought into bonding engagement with the bonding material 20 so that the semiconductor module 14 is secured to the cooling body 12 .
- the heat conductive portion 16 and the heat conductive material 22 are separated from the outside by the bonding material 20 .
- the semiconductor module 14 is secured to the cooling body 12 by means of the bonding material 20 , which is suitable for that purpose, making it possible to attach the semiconductor module 14 to the cooling body 12 with substantial bonding strength.
- the heat conductive portion 16 is thermally coupled to the cooling body 12 by way of the heat conductive material 22 , which is suitable for cooling the semiconductor module 14 , making it possible to adequately cool the semiconductor module 14 .
- the semiconductor device 10 has a reduced number of parts, since the semiconductor module 14 is secured to the cooling body 12 without using screws or the like. Thus, although the semiconductor device of the first embodiment has a reduced number of parts, the semiconductor module 14 is attached to the cooling body 12 with substantial bonding strength and cooled adequately.
- the heat conductive material 22 is formed of electrically conductive material having excellent heat conductivity, and hence is expected to provide good heat conduction. Furthermore, the heat conductive portion 16 and the heat conductive material 22 are separated from the outside by the bonding material 20 , which is formed of insulating material, thereby insulating the heat conductive material 22 from the outside atmosphere. Insulating a semiconductor module from the outside atmosphere is an effective way to maintain the characteristics of the semiconductor module, especially if the module includes a power semiconductor device driven by a high voltage.
- FIG. 3 is a cross-sectional view showing a variation of the semiconductor device of the first embodiment.
- an anchor portion 24 is formed in the surface of the molded resin 18 in contact with the bonding material 20 , thereby increasing the surface roughness of that surface.
- the surface of the molded resin 18 in contact with the bonding material 20 has a greater surface roughness than the surfaces of the molded resin 18 which are not in contact with the bonding material 20 . In this way it is possible to increase the bonding strength of the bonding material 20 between the semiconductor module 14 and the cooling body 12 .
- FIG. 4 is a cross-sectional view showing another variation of the semiconductor device of the first embodiment.
- the portion of the molded resin 18 in contact with the bonding material 20 has been subjected to hydrophilic treatment, forming a hydrophilic portion 26 . Therefore, the portion of the molded resin 18 in contact with the bonding material 20 is more hydrophilic than the portions of the molded resin 18 which are not in contact with the bonding material 20 . In this way it is possible to increase the bonding strength of the bonding material 20 between the semiconductor module 14 and the cooling body 12 . It should be noted that the bonding strength of the bonding material 20 between the semiconductor module 14 and the cooling body 12 may be increased by subjecting the molded resin 18 to a surface treatment other than those described above.
- the bonding material 20 may be formed of material other than insulating material.
- the heat conductive material 22 is formed of electrically conductive material, it is to be understood that in other embodiments it may be formed of, e.g., silicone grease.
- the heat conductive material 22 is formed of an insulating material such as silicone grease, it is easier to insulate the semiconductor module 14 .
- the semiconductor element and the heat conductive portion 16 within the molded resin 18 may be insulated from each other by insulating material in order to ensure the insulation of the semiconductor module.
- FIG. 5 is a cross-sectional view of the semiconductor device of the second embodiment.
- the cooling body 12 has a cooling body groove 12 a formed therein.
- the heat conductive material 22 is separated from a cooling material 30 by the cooling body groove 12 a.
- FIG. 6 is a perspective view showing the cooling body of the semiconductor device of the second embodiment.
- the cooling body groove 12 a formed in the cooling body 12 , has a rectangular annular shape.
- FIG. 7 is a perspective view showing the cooling body, the heat conductive material, and the bonding material in the semiconductor device of the second embodiment.
- the bonding material 30 is formed to surround the heat conductive material 22 .
- the heat conductive material 22 serves to cool the semiconductor module 14
- the bonding material 30 serves to bond the semiconductor module 14 to the cooling body 12 .
- the heat conductive material 22 and the bonding material 30 have different functions. Therefore, mixing or bringing into contact these materials may prevent them from functioning properly.
- the heat conductive material 22 and the bonding material 30 are prevented from being mixed or brought into contact with each other, since they are separated from each other by the cooling body groove 12 a.
- FIG. 8 is a cross-sectional view of the semiconductor device of the third embodiment.
- a bonding material 40 is formed to extend to cover the side surfaces 18 a of the molded resin 18 . Further, the surface of the heat conductive portion 16 in contact with the heat conductive material 22 and the bottom surface 18 b of the molded resin 18 form a single plane.
- the bonding material 40 extends to cover the side surfaces 18 a of the molded resin 18 , the bonding strength of the bonding material 40 between the semiconductor module 14 and the cooling body 12 is increased. Further, since the surface of the heat conductive portion 16 in contact with the heat conductive material 22 and the bottom surface 18 b of the molded resin 18 form a single plane, the gap between the bottom surface 18 b and the cooling body 12 is narrowed, making it easier to form the bonding material 40 , which extends to cover the side surfaces 18 a of the molded resin 18 .
- FIG. 9 is a cross-sectional view showing a variation of the semiconductor device of the third embodiment.
- the outer circumferential bottom edge of the molded resin 18 has been notched to form side surfaces 18 c .
- a bonding material 50 is formed to extend to cover these side surfaces 18 c .
- FIG. 12 is a cross-sectional view showing the way in which the cooling body and the semiconductor module of the semiconductor device of the fifth embodiment are integrally secured together.
- the heat conductive material 22 is formed on the surface of the cooling body 12 .
- the bonding material 70 having the projection 70 a is formed on the surface of the cooling body 12 .
- the bonding material 70 is formed at a distance from the heat conductive material 22 .
- the semiconductor module 14 is then formed, which has the heat conductive portion 16 formed of metal and the molded resin 18 having a surface at which the heat conductive portion 16 is exposed.
- the resin groove 18 d is then formed in the molded resin 18 . It should be noted that the order of the above process steps may be varied where appropriate.
- the semiconductor device manufacturing method of the fifth embodiment is characterized in that the cooling body 12 and the semiconductor module 14 are aligned with each other using the projection 70 a when integrally securing them together, and that the projection 70 a is brought into bonding engagement with the resin groove 18 d in order to increase the bonding strength between the semiconductor module 14 and the cooling body 12 .
- the bonding material 70 need not necessarily be formed at a distance from the heat conductive material 22 .
- semiconductor devices described in connection with the second and subsequent embodiments are susceptible of alterations at least similar to those that can be made to the semiconductor device of the first embodiment. Further, features of different embodiments may be combined where appropriate.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
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US14/806,303 US11088045B2 (en) | 2011-08-26 | 2015-07-22 | Semiconductor device having a cooling body with a groove |
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JP2011-184800 | 2011-08-26 | ||
JP2011184800A JP5747737B2 (ja) | 2011-08-26 | 2011-08-26 | 半導体装置とその製造方法 |
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US14/806,303 Division US11088045B2 (en) | 2011-08-26 | 2015-07-22 | Semiconductor device having a cooling body with a groove |
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US20130049186A1 true US20130049186A1 (en) | 2013-02-28 |
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US13/455,577 Abandoned US20130049186A1 (en) | 2011-08-26 | 2012-04-25 | Semiconductor device and method of manufacture thereof |
US14/806,303 Active 2033-09-26 US11088045B2 (en) | 2011-08-26 | 2015-07-22 | Semiconductor device having a cooling body with a groove |
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US14/806,303 Active 2033-09-26 US11088045B2 (en) | 2011-08-26 | 2015-07-22 | Semiconductor device having a cooling body with a groove |
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US (2) | US20130049186A1 (ja) |
JP (1) | JP5747737B2 (ja) |
CN (1) | CN102956569B (ja) |
DE (1) | DE102012214917B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3506345A1 (en) * | 2017-12-26 | 2019-07-03 | Joinset Co., Ltd | Thermally conductive member |
US10461012B2 (en) | 2014-03-19 | 2019-10-29 | Fuji Electric Co., Ltd. | Semiconductor module with reinforcing board |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5669917B1 (ja) * | 2013-11-01 | 2015-02-18 | 三菱電機株式会社 | 電源装置 |
US10049960B2 (en) | 2014-01-06 | 2018-08-14 | Mitsubishi Electric Corporation | Semiconductor device |
JP6249829B2 (ja) | 2014-03-10 | 2017-12-20 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO2016006054A1 (ja) | 2014-07-09 | 2016-01-14 | 三菱電機株式会社 | 半導体装置 |
WO2016056286A1 (ja) * | 2014-10-10 | 2016-04-14 | 信越化学工業株式会社 | 熱伝導性シリコーングリースを用いた半導体装置 |
JP2018026370A (ja) * | 2014-11-13 | 2018-02-15 | 株式会社日立製作所 | パワー半導体モジュール |
JP6707328B2 (ja) * | 2015-09-01 | 2020-06-10 | ローム株式会社 | パワーモジュール、パワーモジュールの放熱構造、およびパワーモジュールの接合方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050093137A1 (en) * | 2003-11-04 | 2005-05-05 | Jun Ishikawa | Semiconductor apparatus |
US20090315192A1 (en) * | 2008-06-24 | 2009-12-24 | Elpida Memory, Inc. | Method of manufacturing semiconductor device and semiconductor device |
US20110042784A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Mechanical Barrier Element for Improved Thermal Reliability of Electronic Components |
US20110241161A1 (en) * | 2008-02-11 | 2011-10-06 | Globalfoundries Inc. | Chip package with channel stiffener frame |
US20120001318A1 (en) * | 2010-06-30 | 2012-01-05 | Denso Corporation | Semiconductor device |
US20120043662A1 (en) * | 2010-02-01 | 2012-02-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device production method and semiconductor device |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0758254A (ja) | 1993-08-19 | 1995-03-03 | Fujitsu Ltd | マルチチップモジュール及びその製造方法 |
JPH10337A (ja) | 1996-06-19 | 1998-01-06 | Nippon Steel Corp | 金属製触媒コンバータおよびその製造方法 |
US5838545A (en) * | 1996-10-17 | 1998-11-17 | International Business Machines Corporation | High performance, low cost multi-chip modle package |
JPH11111897A (ja) * | 1997-10-03 | 1999-04-23 | Hitachi Ltd | マルチチップ型半導体装置 |
JP3553849B2 (ja) | 2000-03-07 | 2004-08-11 | 富士電機デバイステクノロジー株式会社 | 半導体装置及びその製造方法 |
TW445615B (en) | 2000-08-04 | 2001-07-11 | Siliconware Precision Industries Co Ltd | Semiconductor package with enhanced heat dissipation function |
JP2002110872A (ja) * | 2000-09-27 | 2002-04-12 | Kyocera Corp | 配線基板および配線基板モジュール |
JP3807354B2 (ja) * | 2001-08-06 | 2006-08-09 | 株式会社デンソー | 半導体装置 |
JP2003060137A (ja) | 2001-08-08 | 2003-02-28 | Ibiden Co Ltd | モジュール用基板 |
DE10164494B9 (de) * | 2001-12-28 | 2014-08-21 | Epcos Ag | Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung |
JP3590039B2 (ja) * | 2002-07-24 | 2004-11-17 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP2004103846A (ja) * | 2002-09-10 | 2004-04-02 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP3740116B2 (ja) | 2002-11-11 | 2006-02-01 | 三菱電機株式会社 | モールド樹脂封止型パワー半導体装置及びその製造方法 |
JP4583122B2 (ja) | 2004-09-28 | 2010-11-17 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2006100337A (ja) | 2004-09-28 | 2006-04-13 | Matsushita Electric Ind Co Ltd | 誘電体薄膜の製造方法 |
JP4046120B2 (ja) | 2005-01-27 | 2008-02-13 | 三菱電機株式会社 | 絶縁シートの製造方法およびパワーモジュールの製造方法 |
US7265445B2 (en) * | 2005-03-23 | 2007-09-04 | Texas Instruments Incorporated | Integrated circuit package |
JP2006344770A (ja) | 2005-06-09 | 2006-12-21 | Mitsubishi Electric Corp | 半導体モジュールおよび半導体装置 |
CN1941332A (zh) * | 2005-09-29 | 2007-04-04 | 沛亨半导体股份有限公司 | 高分子材料与芯片的局部接合结构 |
WO2007052476A1 (ja) * | 2005-11-02 | 2007-05-10 | Matsushita Electric Industrial Co., Ltd. | 電子回路装置およびその製造方法 |
TWI355048B (en) * | 2006-12-13 | 2011-12-21 | Siliconware Precision Industries Co Ltd | Heat-dissipation semiconductor package and heat-di |
US7635916B2 (en) * | 2007-03-23 | 2009-12-22 | Honeywell International Inc. | Integrated circuit package with top-side conduction cooling |
JP5233170B2 (ja) * | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法 |
KR101004842B1 (ko) * | 2008-07-25 | 2010-12-28 | 삼성전기주식회사 | 전자 칩 모듈 |
JP5071405B2 (ja) | 2009-02-13 | 2012-11-14 | 三菱電機株式会社 | 電力用半導体装置 |
JP4844904B2 (ja) * | 2009-03-27 | 2011-12-28 | Tdk株式会社 | 多層配線板及びその製造方法 |
JP5504683B2 (ja) * | 2009-04-27 | 2014-05-28 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP5420313B2 (ja) * | 2009-05-20 | 2014-02-19 | オリンパス株式会社 | 接合光学素子を有する光学部品及びその製造方法 |
US8362607B2 (en) * | 2009-06-03 | 2013-01-29 | Honeywell International Inc. | Integrated circuit package including a thermally and electrically conductive package lid |
JP5306171B2 (ja) * | 2009-12-25 | 2013-10-02 | 三菱電機株式会社 | 半導体装置 |
CN101770997A (zh) * | 2010-01-29 | 2010-07-07 | 江苏长电科技股份有限公司 | 树脂线路板芯片倒装带散热块封装结构 |
JP5455720B2 (ja) * | 2010-03-12 | 2014-03-26 | パナソニック株式会社 | 光半導体パッケージおよび光半導体装置 |
JP5445341B2 (ja) | 2010-06-11 | 2014-03-19 | 三菱電機株式会社 | 半導体装置 |
JP5257817B2 (ja) | 2010-06-15 | 2013-08-07 | 三菱電機株式会社 | 半導体装置 |
TWI520386B (zh) * | 2010-07-29 | 2016-02-01 | 神基科技股份有限公司 | 發光二極體總成的結構與其製造方法 |
-
2011
- 2011-08-26 JP JP2011184800A patent/JP5747737B2/ja active Active
-
2012
- 2012-04-25 US US13/455,577 patent/US20130049186A1/en not_active Abandoned
- 2012-08-22 DE DE102012214917.1A patent/DE102012214917B4/de active Active
- 2012-08-24 CN CN201210304452.XA patent/CN102956569B/zh active Active
-
2015
- 2015-07-22 US US14/806,303 patent/US11088045B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050093137A1 (en) * | 2003-11-04 | 2005-05-05 | Jun Ishikawa | Semiconductor apparatus |
US20110241161A1 (en) * | 2008-02-11 | 2011-10-06 | Globalfoundries Inc. | Chip package with channel stiffener frame |
US20090315192A1 (en) * | 2008-06-24 | 2009-12-24 | Elpida Memory, Inc. | Method of manufacturing semiconductor device and semiconductor device |
US20110042784A1 (en) * | 2009-08-24 | 2011-02-24 | International Business Machines Corporation | Mechanical Barrier Element for Improved Thermal Reliability of Electronic Components |
US20120043662A1 (en) * | 2010-02-01 | 2012-02-23 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device production method and semiconductor device |
US20120001318A1 (en) * | 2010-06-30 | 2012-01-05 | Denso Corporation | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10461012B2 (en) | 2014-03-19 | 2019-10-29 | Fuji Electric Co., Ltd. | Semiconductor module with reinforcing board |
EP3506345A1 (en) * | 2017-12-26 | 2019-07-03 | Joinset Co., Ltd | Thermally conductive member |
Also Published As
Publication number | Publication date |
---|---|
US20150325493A1 (en) | 2015-11-12 |
CN102956569A (zh) | 2013-03-06 |
US11088045B2 (en) | 2021-08-10 |
JP5747737B2 (ja) | 2015-07-15 |
DE102012214917B4 (de) | 2018-09-27 |
DE102012214917A1 (de) | 2013-02-28 |
JP2013046016A (ja) | 2013-03-04 |
CN102956569B (zh) | 2016-01-13 |
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