JP2012532473A - 散乱粒子領域を有するledパッケージ - Google Patents
散乱粒子領域を有するledパッケージ Download PDFInfo
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- JP2012532473A JP2012532473A JP2012519534A JP2012519534A JP2012532473A JP 2012532473 A JP2012532473 A JP 2012532473A JP 2012519534 A JP2012519534 A JP 2012519534A JP 2012519534 A JP2012519534 A JP 2012519534A JP 2012532473 A JP2012532473 A JP 2012532473A
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- led
- light
- scattering
- scattering particles
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
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- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 239000004408 titanium dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Abstract
【選択図】図3
Description
Claims (11)
- 発光ダイオード(LED)放射プロファイルでLED光を放射する少なくとも1つのLEDと、
第1ターゲット波長を散乱する第1の複数の散乱粒子と、
前記第1ターゲット波長とは異なる第2ターゲット波長を散乱する第2の複数の散乱粒子とを備え、
前記LED放射プロファイルの均一性を改善するように、前記LED光を散乱させるべく、前記第1の複数の散乱粒子及び前記第2の複数の散乱粒子が前記LEDの周りに配置されるLEDパッケージ。 - 前記LEDパッケージは、パッケージ放射プロファイルで放射し、
前記LED放射プロファイルと比較して、前記パッケージ放射プロファイルが、様々な観察角度において改善された放射均一性を有するように、前記第1の複数の散乱粒子及び前記第2の複数の散乱粒子が前記LED光を散乱する請求項1に記載のLEDパッケージ。 - 前記第1の複数の散乱粒子及び前記第2の複数の散乱粒子はそれぞれ、第1散乱粒子領域及び第2散乱粒子領域に配置される請求項1に記載のLEDパッケージ。
- 前記第1散乱粒子領域は、放射角度0°をカバーする請求項3に記載のLEDパッケージ。
- 前記第1散乱粒子領域は、放射角度0°から45°のうちの少なくとも一部をカバーする請求項3に記載のLEDパッケージ。
- 前記第2散乱粒子領域は、放射角度90°をカバーする請求項3に記載のLEDパッケージ。
- 前記第2散乱粒子領域は、放射角度75°をカバーする請求項3に記載のLEDパッケージ。
- 前記第2散乱粒子領域は、放射角度45°から90°のうちの少なくとも一部をカバーする請求項3に記載のLEDパッケージ。
- 前記第1の複数の散乱粒子は、青色の波長の光を散乱し、前記第2の複数の散乱粒子は、黄色の波長の光を散乱する請求項1に記載のLEDパッケージ。
- 前記第1の複数の散乱粒子及び前記第2の複数の散乱粒子は、50%未満の粒径分布を有する請求項1に記載のLEDパッケージ。
- 前記第1の複数の散乱粒子及び前記第2の複数の散乱粒子は、33%未満の粒径分布を有する請求項1に記載のLEDパッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/498,253 | 2009-07-06 | ||
US12/498,253 US8415692B2 (en) | 2009-07-06 | 2009-07-06 | LED packages with scattering particle regions |
PCT/US2010/001852 WO2011005300A1 (en) | 2009-07-06 | 2010-06-28 | Led packages with scattering particle regions |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012532473A true JP2012532473A (ja) | 2012-12-13 |
JP5676599B2 JP5676599B2 (ja) | 2015-02-25 |
Family
ID=43014543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012519534A Active JP5676599B2 (ja) | 2009-07-06 | 2010-06-28 | 散乱粒子領域を有するledパッケージ |
Country Status (8)
Country | Link |
---|---|
US (1) | US8415692B2 (ja) |
EP (1) | EP2452374B1 (ja) |
JP (1) | JP5676599B2 (ja) |
KR (1) | KR20120097477A (ja) |
CN (1) | CN102473822B (ja) |
IN (1) | IN2012DN00988A (ja) |
TW (1) | TW201130169A (ja) |
WO (1) | WO2011005300A1 (ja) |
Cited By (5)
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JP2014225660A (ja) * | 2013-04-27 | 2014-12-04 | 日亜化学工業株式会社 | 半導体レーザ装置及びその製造方法並びにサブマウントの製造方法 |
JP2016070938A (ja) * | 2014-09-30 | 2016-05-09 | 敏治 吉川 | 非接触式3dスキャナー用の表面反射材 |
JP2017504220A (ja) * | 2013-11-08 | 2017-02-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品、オプトエレクトロニクス装置、光学要素の製造方法、およびオプトエレクトロニクス部品の製造方法 |
KR20170123644A (ko) * | 2015-02-23 | 2017-11-08 | 코닌클리케 필립스 엔.브이. | 개선된 색 균일성을 갖는 광원 조립체 |
WO2021166684A1 (ja) * | 2020-02-20 | 2021-08-26 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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JP2010231938A (ja) * | 2009-03-26 | 2010-10-14 | Panasonic Electric Works Co Ltd | Led照明装置 |
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Also Published As
Publication number | Publication date |
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CN102473822A (zh) | 2012-05-23 |
KR20120097477A (ko) | 2012-09-04 |
CN102473822B (zh) | 2016-09-28 |
US20110001151A1 (en) | 2011-01-06 |
IN2012DN00988A (ja) | 2015-04-10 |
EP2452374A1 (en) | 2012-05-16 |
EP2452374B1 (en) | 2019-11-27 |
US8415692B2 (en) | 2013-04-09 |
WO2011005300A1 (en) | 2011-01-13 |
TW201130169A (en) | 2011-09-01 |
JP5676599B2 (ja) | 2015-02-25 |
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