JP2012518722A5 - - Google Patents

Download PDF

Info

Publication number
JP2012518722A5
JP2012518722A5 JP2011551211A JP2011551211A JP2012518722A5 JP 2012518722 A5 JP2012518722 A5 JP 2012518722A5 JP 2011551211 A JP2011551211 A JP 2011551211A JP 2011551211 A JP2011551211 A JP 2011551211A JP 2012518722 A5 JP2012518722 A5 JP 2012518722A5
Authority
JP
Japan
Prior art keywords
impedance matching
matching network
capacitor
radio frequency
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011551211A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012518722A (ja
Filing date
Publication date
Priority claimed from US12/389,253 external-priority patent/US8540851B2/en
Application filed filed Critical
Publication of JP2012518722A publication Critical patent/JP2012518722A/ja
Publication of JP2012518722A5 publication Critical patent/JP2012518722A5/ja
Abandoned legal-status Critical Current

Links

JP2011551211A 2009-02-19 2010-02-18 インピーダンス整合回路網による物理的蒸着 Abandoned JP2012518722A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/389,253 2009-02-19
US12/389,253 US8540851B2 (en) 2009-02-19 2009-02-19 Physical vapor deposition with impedance matching network
PCT/US2010/024549 WO2010096533A1 (en) 2009-02-19 2010-02-18 Physical vapor deposition with impedance matching network

Publications (2)

Publication Number Publication Date
JP2012518722A JP2012518722A (ja) 2012-08-16
JP2012518722A5 true JP2012518722A5 (enExample) 2013-03-28

Family

ID=42558973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011551211A Abandoned JP2012518722A (ja) 2009-02-19 2010-02-18 インピーダンス整合回路網による物理的蒸着

Country Status (5)

Country Link
US (1) US8540851B2 (enExample)
EP (1) EP2398930B1 (enExample)
JP (1) JP2012518722A (enExample)
KR (1) KR101371003B1 (enExample)
WO (1) WO2010096533A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
DE102011086111B4 (de) * 2011-11-10 2016-03-17 Fhr Anlagenbau Gmbh Anordnung zur Einspeisung von HF-Strom für Rohrkathoden
US20130284589A1 (en) * 2012-04-30 2013-10-31 Youming Li Radio frequency tuned substrate biased physical vapor deposition apparatus and method of operation
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6900469B2 (ja) * 2017-05-09 2021-07-07 富士フイルム株式会社 成膜装置および圧電膜の成膜方法
US12209302B2 (en) 2018-12-19 2025-01-28 Evatec Ag Vacuum system and method to deposit a compound layer
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
WO2021148195A1 (en) * 2020-01-24 2021-07-29 Evatec Ag Phase shift controlled sputter system and process
WO2023286289A1 (ja) * 2021-07-16 2023-01-19 株式会社アルバック 成膜方法及び成膜装置
JP7036999B1 (ja) * 2021-07-16 2022-03-15 株式会社アルバック 成膜方法及び成膜装置

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617459A (en) * 1967-09-15 1971-11-02 Ibm Rf sputtering method and apparatus for producing insulating films of varied physical properties
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4584079A (en) * 1983-10-11 1986-04-22 Honeywell Inc. Step shape tailoring by phase angle variation RF bias sputtering
JPS61276966A (ja) * 1985-04-30 1986-12-06 Oki Electric Ind Co Ltd 帯電性材料の高周波スパツタリング法
US4622122A (en) * 1986-02-24 1986-11-11 Oerlikon Buhrle U.S.A. Inc. Planar magnetron cathode target assembly
JPS6459920A (en) * 1987-08-31 1989-03-07 Hitachi Ltd Device for forming thin film
JPH03201713A (ja) * 1989-12-28 1991-09-03 Clarion Co Ltd 圧電膜製造装置
US5198090A (en) * 1990-08-31 1993-03-30 International Business Machines Corporation Sputtering apparatus for producing thin films of material
KR100255703B1 (ko) * 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
JP3441746B2 (ja) 1992-11-09 2003-09-02 キヤノン株式会社 バイアススパッタ方法およびその装置
JPH0715051A (ja) * 1993-06-24 1995-01-17 Mitsubishi Electric Corp Ybco超電導薄膜の製造方法
JP3490483B2 (ja) 1993-10-08 2004-01-26 アネルバ株式会社 Pzt薄膜の作製方法
US5729423A (en) * 1994-01-31 1998-03-17 Applied Materials, Inc. Puncture resistant electrostatic chuck
KR100430643B1 (ko) * 1994-01-31 2004-05-12 어플라이드 머티어리얼스, 인코포레이티드 두께가 균일한 절연체 막을 갖는 정전기 척
JP3890634B2 (ja) * 1995-09-19 2007-03-07 セイコーエプソン株式会社 圧電体薄膜素子及びインクジェット式記録ヘッド
JPH09176850A (ja) 1995-12-22 1997-07-08 Ulvac Japan Ltd スパッタリング装置、及び誘電体膜製造方法
US6579426B1 (en) * 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US5910886A (en) * 1997-11-07 1999-06-08 Sierra Applied Sciences, Inc. Phase-shift power supply
TW584905B (en) * 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
JP3944341B2 (ja) * 2000-03-28 2007-07-11 株式会社東芝 酸化物エピタキシャル歪格子膜の製造法
US6440280B1 (en) * 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
US6471830B1 (en) * 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
JP4553476B2 (ja) 2000-10-24 2010-09-29 株式会社アルバック スパッタ方法及びスパッタ装置
JP2003166047A (ja) * 2001-09-20 2003-06-13 Shin Meiwa Ind Co Ltd ハロゲン化合物の成膜方法及び成膜装置、並びにフッ化マグネシウム膜
JP4204824B2 (ja) * 2001-09-20 2009-01-07 新明和工業株式会社 光学系
US20030180450A1 (en) * 2002-03-22 2003-09-25 Kidd Jerry D. System and method for preventing breaker failure
AU2003224727A1 (en) * 2002-03-28 2003-10-13 Tokyo Electron Limited A system and method for determining the state of a film in a plasma reactor using an electrical property
SE526857C2 (sv) * 2003-12-22 2005-11-08 Seco Tools Ab Sätt att belägga ett skärverktyg med användning av reaktiv magnetronsputtering
US20060172536A1 (en) * 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
JP4851108B2 (ja) 2005-03-24 2012-01-11 富士フイルム株式会社 複合ペロブスカイト型化合物の膜の成膜方法、並びに、それを用いた液体吐出ヘッドの製造方法
JP5063892B2 (ja) * 2005-12-20 2012-10-31 富士フイルム株式会社 液体吐出ヘッドの製造方法
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
WO2007106660A2 (en) * 2006-03-09 2007-09-20 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US20080083611A1 (en) * 2006-10-06 2008-04-10 Tegal Corporation High-adhesive backside metallization
JP5194463B2 (ja) * 2007-01-31 2013-05-08 パナソニック株式会社 圧電体薄膜素子の製造方法
EP1953840A3 (en) 2007-01-31 2012-04-11 Panasonic Corporation Piezoelectric thin film device and piezoelectric thin film device manufacturing method and inkjet head and inkjet recording apparatus
JP2008266771A (ja) * 2007-03-22 2008-11-06 Fujifilm Corp 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置
EP1973177B8 (en) * 2007-03-22 2015-01-21 FUJIFILM Corporation Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
JP4903610B2 (ja) * 2007-03-27 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置
JP4317888B2 (ja) * 2007-08-31 2009-08-19 富士フイルム株式会社 スパッタ方法およびスパッタ装置
US8066857B2 (en) * 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
US8043487B2 (en) * 2008-12-12 2011-10-25 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition

Similar Documents

Publication Publication Date Title
JP2012518722A5 (enExample)
KR101371003B1 (ko) 임피던스 매칭 네트워크에 의한 물리 기상 증착법
US10032608B2 (en) Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
JP5492070B2 (ja) ウエハに面する電極に直流電圧を誘導するための方法およびプラズマ処理装置
JP2017504955A5 (enExample)
Shen et al. Magnetron sputtered NbN thin film electrodes for supercapacitors
TW200307989A (en) Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
TWI480405B (zh) Physical vapor deposition device
US20130248352A1 (en) Multiple Frequency Sputtering for Enhancement in Deposition Rate and Growth Kinetics of Dielectric Materials
ATE473513T1 (de) Impedanzanpassung eines kapazitiv gekoppelten hf- plasmareaktors mit eignung für grossflächige substrate
WO2008102738A1 (ja) 真空処理装置および真空処理装置を用いた製膜方法
CN104498883A (zh) 在柔性衬底上沉积高c轴取向氮化铝薄膜的方法
TW201907510A (zh) 半導體裝置及其阻抗調節方法
WO2003030241A1 (en) Plasma processing apparatus
US8557088B2 (en) Physical vapor deposition with phase shift
TW200947603A (en) Substrate mounting stand for plasma processing device, plasma processing device, and insulating coating deposition method
CN203411601U (zh) 分区多靶磁控溅射设备
JP5717783B2 (ja) 高周波同調基板バイアス物理的蒸着装置及びその駆動方法
CN109943819A (zh) 一种高介电常数氧化镍薄膜介质层电容器的制备方法
JP2013122080A (ja) スパッタリング装置
JP7210316B2 (ja) 成膜方法および成膜装置
JP7163154B2 (ja) 薄膜製造方法、対向ターゲット式スパッタリング装置
CN107437930A (zh) 体声波谐振器及其底电极的制备方法
JP2002217669A (ja) 整合回路、プラズマ処理方法及び装置