JPS6459920A - Device for forming thin film - Google Patents

Device for forming thin film

Info

Publication number
JPS6459920A
JPS6459920A JP21703187A JP21703187A JPS6459920A JP S6459920 A JPS6459920 A JP S6459920A JP 21703187 A JP21703187 A JP 21703187A JP 21703187 A JP21703187 A JP 21703187A JP S6459920 A JPS6459920 A JP S6459920A
Authority
JP
Japan
Prior art keywords
substrate
thin film
electrons
flat part
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21703187A
Other languages
Japanese (ja)
Inventor
Nobuo Owada
Mitsuaki Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21703187A priority Critical patent/JPS6459920A/en
Publication of JPS6459920A publication Critical patent/JPS6459920A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the adhesion properties of a thin film to the irregular part of a substrate by a method wherein a magnet field where the incident direction of electrons supplied from plasma or electron supply to be entered into the substrate is inclined to the normal of substrate is provided. CONSTITUTION:The title thin film forming device is provided with multiple electron sources 12 inclined to a substrate 4 as well as deflecting magnets 13 changing the irradiating positions of electrons (e) radiated from the electron sources 12 to the substrate 4 with the lapse of time. Consequently, sufficient energy by the irradiation of electrons (e) can be given to the step parts 4d of the substrate 4 where the energy by incident ion i is in short supply due to the incident ion i direction of supplied energy almost in parallel with the incident ion i direction of reactive gas 8 comparing with the flat part 4e as well as the deposition speed of thin film 4c is decelerated comparing with that of the flat part 4e so that the deposition speed in the part between the step part 4d and the flat part 4e may be equalized to improve the adhesion properties and the film quality of the thin film 4c to the irregular parts of the substrate 4.
JP21703187A 1987-08-31 1987-08-31 Device for forming thin film Pending JPS6459920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21703187A JPS6459920A (en) 1987-08-31 1987-08-31 Device for forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21703187A JPS6459920A (en) 1987-08-31 1987-08-31 Device for forming thin film

Publications (1)

Publication Number Publication Date
JPS6459920A true JPS6459920A (en) 1989-03-07

Family

ID=16697753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21703187A Pending JPS6459920A (en) 1987-08-31 1987-08-31 Device for forming thin film

Country Status (1)

Country Link
JP (1) JPS6459920A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012518722A (en) * 2009-02-19 2012-08-16 富士フイルム株式会社 Physical vapor deposition with an impedance matching network.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012518722A (en) * 2009-02-19 2012-08-16 富士フイルム株式会社 Physical vapor deposition with an impedance matching network.

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