JPS6418991A - Formation of diamond thin film - Google Patents
Formation of diamond thin filmInfo
- Publication number
- JPS6418991A JPS6418991A JP17322987A JP17322987A JPS6418991A JP S6418991 A JPS6418991 A JP S6418991A JP 17322987 A JP17322987 A JP 17322987A JP 17322987 A JP17322987 A JP 17322987A JP S6418991 A JPS6418991 A JP S6418991A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- carbon
- contg
- raw material
- nuclei
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To accomplish formation of a high-quality diamond thin film at high speed in good reproducibility, by forming diamond crystal nuclei on a substrate surface through PVD process followed by growth of said nuclei through CVD process. CONSTITUTION:Ar, H2 etc. is introduced through an inlet 19 into an ion source 11, and ion beams 12 having resulted from accelerating ions to a specified energy level by electric discharge is irradiated on a carbon-contg. target 13 to feed carbon-contg. particles onto the surface of a substrate 14 through sputtering to create diamond nuclei. The unnecessary graphitic carbon concurrently formed is eliminated by the simultaneous irradiation of beams 12 at a specified angle of incidence theta on the surface of said substrate. Thence, H2 as the reaction gas and methane etc. as the carbon-contg. raw material are introduced through a gas plus raw material inlet 17 and a microwave through a waveguide 16 at a specified output to generate a plasma to effect reaction between the reaction gas and the raw material, and then the above-mentioned crystal nuclei created by the PVD process are made to grow, through CVD process, on the substrate 14 surface heated by a heater 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17322987A JPS6418991A (en) | 1987-07-10 | 1987-07-10 | Formation of diamond thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17322987A JPS6418991A (en) | 1987-07-10 | 1987-07-10 | Formation of diamond thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418991A true JPS6418991A (en) | 1989-01-23 |
Family
ID=15956539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17322987A Pending JPS6418991A (en) | 1987-07-10 | 1987-07-10 | Formation of diamond thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418991A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214897A (en) * | 1988-07-01 | 1990-01-18 | Asahi Daiyamondo Kogyo Kk | Production of filmy diamond |
| JPH0297486A (en) * | 1988-10-02 | 1990-04-10 | Canon Inc | Formation of diamond |
| JPH02289492A (en) * | 1989-04-28 | 1990-11-29 | Mitsubishi Materials Corp | Formation of artificial diamond coating film |
| US5082359A (en) * | 1989-11-28 | 1992-01-21 | Epion Corporation | Diamond films and method of growing diamond films on nondiamond substrates |
| US5200231A (en) * | 1989-08-17 | 1993-04-06 | U.S. Philips Corporation | Method of manufacturing polycrystalline diamond layers |
| US8039108B2 (en) * | 2006-02-10 | 2011-10-18 | Toyota Jidosha Kabushiki Kaisha | Member for cavitation erosion resistance and method for manufacturing same |
-
1987
- 1987-07-10 JP JP17322987A patent/JPS6418991A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214897A (en) * | 1988-07-01 | 1990-01-18 | Asahi Daiyamondo Kogyo Kk | Production of filmy diamond |
| JPH0297486A (en) * | 1988-10-02 | 1990-04-10 | Canon Inc | Formation of diamond |
| JPH02289492A (en) * | 1989-04-28 | 1990-11-29 | Mitsubishi Materials Corp | Formation of artificial diamond coating film |
| US5200231A (en) * | 1989-08-17 | 1993-04-06 | U.S. Philips Corporation | Method of manufacturing polycrystalline diamond layers |
| US5082359A (en) * | 1989-11-28 | 1992-01-21 | Epion Corporation | Diamond films and method of growing diamond films on nondiamond substrates |
| US8039108B2 (en) * | 2006-02-10 | 2011-10-18 | Toyota Jidosha Kabushiki Kaisha | Member for cavitation erosion resistance and method for manufacturing same |
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