JPS6277465A - Formation of amorphous silicon film - Google Patents

Abstract

PURPOSE:To form a good amorphous silicon film at a low temp. and high speed by forming the film consisting of amorphous silicon by using an electron cyclotron resonance plasma chemical vapor deposition method. CONSTITUTION:After the inside of a chamber 1 is evacuated to about <=10<-5>Torr vacuum, gaseous Ar is introduced from a plasma generating gas introducing port 17 into the chamber and gaseous SiH4 is introduced from a reactive gas introducing port 18 into the chamber. These gases are evacuated from the chamber 1 and the inside thereof is maintained under about 10<-4>-10<-3>Torr. About 245GHz microwaves are applied thereto from a waveguide 12. About 875 gauss magnetic field is then applied thereto by a magnet coil 13, then electron cyclotron resonance conditions are satisfied in a plasma chamber 11, by which the kinetic energy of electrons and ionization efficiency are increased and the high density plasma is obtd. A divergent magnetic field is formed from the chamber 11 toward a sample baser 14 and ions are led out of the chamber 11. The high density plasma generated by the electron cyclotron resonance is thereby efficiently transported along the divergent magnetic field toward a sample holder 14 and the film of the amorphous silicon is formed on the substrate 15 at the low temp. and high speed.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for forming a film of amorphous silicon. [Prior Art] As a conventional method for forming a film of amorphous silicon, there is a method of forming a film of amorphous silicon. There was a vapor phase growth method (hereinafter referred to as F-pravma CVD). Third
Figure rJ is a configuration diagram of a conventional plasma CVD. 4) is pulp.

(5) is the cathode electrode, (6) is the anode electrode, (7)
(5).

(6) is a power source for supplying electricity, and (8) is a substrate on which a film is attached. (9) A heater for heating the substrate, and a power source for supplying electricity to the heater.

Next, the operation will be explained. After evacuating the chamber (1) to a vacuum of several 1 rLT or r to about F using the vacuum evacuation system (2), (3j gas supply system, forming a film of SiH4, 5iH4 + H!, SI H4 + Ar, etc.) The pulp (4) is opened to supply gas to the upper part of the chatter bar (1), and a part of the gas is evacuated by the vacuum exhaust system (2) to maintain the pressure in the chamber (1) at around ITorr.After this, the upper electrode ( 5) and F Toden* 16) When voltage is applied using the power source (7) to generate plasma in the chamber (1), the board (8) is placed on the F section wX pole (6). Amorphous silicon can be deposited on a substrate. Also, during film formation, the substrate is heated to about 250°C using a heater (9).Electricity is supplied to the heater from a power source (10).[Problems to be solved by the invention] Conventional plastic pumps Since the CVD apparatus is configured as shown below, there is a restriction that in order to obtain a good film, it must be heated to about 250°C or higher, and
fd ”200 under conditions where a film with a good film formation rate can be obtained.
It had the disadvantage of being relatively slow at about A/min.

This invention was developed to solve the above-mentioned problems, and aims to provide a film-forming method that can be formed at a relatively low temperature and several times faster than conventional methods.

[Means for solving problems]

The film forming method according to the present invention includes an electron cyclotron resonance method (
An amorphous silicon film is formed by generating a plastic material using FECR (hereinafter referred to as 'FECR)'. Create an elephant, create high energy Prabhuma, and S”4 fyo formation &
Forming an amorphous silicon film by accelerating the decomposition of scum [Implementation row] Hereinafter, one embodiment of the present invention will be explained with reference to the drawings. A waveguide that supplies microwaves to generate ff plasma, a magnet coil that applies a magnetic field to satisfy the Q31i cyclotron resonance conditions, ( ] 4 is a sample stage, and a substrate on which a film is to be deposited on U).

Shouting is the shutter, tlη is the plasma generating phase gas supply port α
The mark is the reaction waste supply port. 10 inside cha/bar (1)
After evacuating to a temperature below about Torr, introduce Ar gas from the plasma generation gas inlet αη, and SiH gas from the reaction gas inlet marked a. Exhaust these gases with an oil diffusion pump, etc. Inside the bar (1)
Q Torr ~ l Keep it at around Q Torr. In this state, when microwaves of about Z45G)iZ are applied to the waveguide az and a magnetic field of about 875 force U is applied to the first order by the magnet coil αQ, the electron cyclotron resonance condition is satisfied in the plasma waIl, and the kinetic energy of the electrons is , the ionization efficiency increases and high-density plasma is obtained. In addition, in this device, a diverging magnetic field is formed from the plasma plate toward the sample stage, so ions are extracted from the plastic sample f'L.
Ru. Therefore, the high visibility plasma produced by electron cyclotron resonance is effectively transported to the sample holder along the divergent magnetic field, and in this state, amorphous silicon is formed.
The results are shown below.

FIG. 2 shows the state of the film quality when the film was formed using the microwave output as a parameter. This diagram.

500V, which is the result when film was formed without heating substrate 4.
When deposited with a microwave power of %', the W# conductivity is 3-4.
X I O510IL *Photoconductivity 1-2XlO-8
',/Q! + (irradiation with light of 544nm 501tw/cd), it was possible to obtain amorphous silicon with a film quality equivalent to that of normal noFlasma CVD, and the film formation rate at this time was 4 to 8 times that of Plasma CVD. It was fast too. This film can be applied to devices such as diodes, thin film transistors, and solar cells.Although the above example shows the case where amorphous silicon is deposited without heating.

Even when heated up to about 300°C, the same characteristics can be obtained. [Effects of the Invention] As described above, according to the present invention, amorphous silicon is This film has the effect of producing good amorphous silicon at low temperatures and high speeds.

[Brief explanation of drawings]

Fig. 1 is a block diagram showing 11 electron cyclotron resonance plasma CVD, Fig. 2 is a characteristic diagram of amorphous silicon formed by electron cyclotron resonance plasma CVD according to the present invention, and Fig. 3 is a diagram showing the characteristics of amorphous silicon. It is a block diagram of rO rice. In the figure, (1) is a chatuba, and (2) is a vacuum exhaust system. +31 rI canu supply system! 4+ 1c ha/nipu,!
51 [Top electrode, (6) is the F section electrode, (7) is the high frequency 181U substrate, (9) is the heating heater, I am the heater power supply, (Ill is the plug. α2 is the waveguide, 03I is the magnet. A coil, and of course a sample stage.0 plate, u6) is a shutter, 071 is a plasma generation gas inlet, and α81 is a reaction gas inlet.The same reference numerals in the drawings indicate the same or equivalent parts. Fig. 1 1θ: Destination η゛su 5. Low Fig. 2 Microphone 1 5. tunfJcw)

Claims (1)

[Claims] An amorphous silicon film forming method characterized by forming amorphous silicon into a film using electron cyclotron resonance plasma chemical vapor deposition method.