JPS57160909A - Formation of thin amorphous silicon hydride film - Google Patents

Formation of thin amorphous silicon hydride film

Info

Publication number
JPS57160909A
JPS57160909A JP56045139A JP4513981A JPS57160909A JP S57160909 A JPS57160909 A JP S57160909A JP 56045139 A JP56045139 A JP 56045139A JP 4513981 A JP4513981 A JP 4513981A JP S57160909 A JPS57160909 A JP S57160909A
Authority
JP
Japan
Prior art keywords
amorphous silicon
film
substrate
thin amorphous
silicon hydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56045139A
Other languages
Japanese (ja)
Inventor
Satoru Kawai
Toshiro Kodama
Kiyoshi Ozawa
Nobuyoshi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56045139A priority Critical patent/JPS57160909A/en
Publication of JPS57160909A publication Critical patent/JPS57160909A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a thin amorphous silicon hydride film capable of considerably changing the characteristics and undergoing no damage by introducing ionized hydrogen into a thin amorphous silicon film. CONSTITUTION:Gaseous Ar 3 for sputtering is introduced into the ion generating chamber 4 of a vacuum vessel 1 provided with an evacuating device 2, ionized, and accelerated. High energy Ar ions 5 leaving the chamber 4 hit on a silicn target 6, and the kinetic energy is converted to sputter silicon atoms 7. The silicon atoms 7 reach a substrate 9 provided with a heater 8 and deposite on the substrate 9. To hydrogenate the silicon film, gaseous hydrogen 11 is introduced into the chamber 4 of the ion beam sputtering apparatus during deposition. Thus, amorphous silicon hydride is deposited. By changing the temp. of the substrate, the hydrogen content of the film can be changed, and the optical properties can be controlled easily.
JP56045139A 1981-03-27 1981-03-27 Formation of thin amorphous silicon hydride film Pending JPS57160909A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045139A JPS57160909A (en) 1981-03-27 1981-03-27 Formation of thin amorphous silicon hydride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045139A JPS57160909A (en) 1981-03-27 1981-03-27 Formation of thin amorphous silicon hydride film

Publications (1)

Publication Number Publication Date
JPS57160909A true JPS57160909A (en) 1982-10-04

Family

ID=12710943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045139A Pending JPS57160909A (en) 1981-03-27 1981-03-27 Formation of thin amorphous silicon hydride film

Country Status (1)

Country Link
JP (1) JPS57160909A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596374A (en) * 1982-07-02 1984-01-13 Nippon Sheet Glass Co Ltd Adhesion of metal compound thin film
JPS63283119A (en) * 1987-05-15 1988-11-21 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor, amorphous semiconductor device and manufacture thereof
US7439197B2 (en) 2004-11-08 2008-10-21 Samsung Electronics Co., Ltd. Method of fabricating a capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596374A (en) * 1982-07-02 1984-01-13 Nippon Sheet Glass Co Ltd Adhesion of metal compound thin film
JPH0323626B2 (en) * 1982-07-02 1991-03-29 Nippon Sheet Glass Co Ltd
JPS63283119A (en) * 1987-05-15 1988-11-21 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor, amorphous semiconductor device and manufacture thereof
US7439197B2 (en) 2004-11-08 2008-10-21 Samsung Electronics Co., Ltd. Method of fabricating a capacitor

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