JP2012518722A - インピーダンス整合回路網による物理的蒸着 - Google Patents

インピーダンス整合回路網による物理的蒸着 Download PDF

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Publication number
JP2012518722A
JP2012518722A JP2011551211A JP2011551211A JP2012518722A JP 2012518722 A JP2012518722 A JP 2012518722A JP 2011551211 A JP2011551211 A JP 2011551211A JP 2011551211 A JP2011551211 A JP 2011551211A JP 2012518722 A JP2012518722 A JP 2012518722A
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JP
Japan
Prior art keywords
substrate
capacitor
vapor deposition
physical vapor
impedance matching
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Abandoned
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JP2011551211A
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English (en)
Japanese (ja)
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JP2012518722A5 (enExample
Inventor
リー ユーミン
バークマイヤー ジェフリー
隆満 藤井
崇幸 直野
慶一 菱沼
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Fujifilm Corp
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Fujifilm Corp
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Publication of JP2012518722A publication Critical patent/JP2012518722A/ja
Publication of JP2012518722A5 publication Critical patent/JP2012518722A5/ja
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
JP2011551211A 2009-02-19 2010-02-18 インピーダンス整合回路網による物理的蒸着 Abandoned JP2012518722A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/389,253 2009-02-19
US12/389,253 US8540851B2 (en) 2009-02-19 2009-02-19 Physical vapor deposition with impedance matching network
PCT/US2010/024549 WO2010096533A1 (en) 2009-02-19 2010-02-18 Physical vapor deposition with impedance matching network

Publications (2)

Publication Number Publication Date
JP2012518722A true JP2012518722A (ja) 2012-08-16
JP2012518722A5 JP2012518722A5 (enExample) 2013-03-28

Family

ID=42558973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011551211A Abandoned JP2012518722A (ja) 2009-02-19 2010-02-18 インピーダンス整合回路網による物理的蒸着

Country Status (5)

Country Link
US (1) US8540851B2 (enExample)
EP (1) EP2398930B1 (enExample)
JP (1) JP2012518722A (enExample)
KR (1) KR101371003B1 (enExample)
WO (1) WO2010096533A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018207577A1 (ja) * 2017-05-09 2020-03-12 富士フイルム株式会社 成膜装置および圧電膜の成膜方法
JP7036999B1 (ja) * 2021-07-16 2022-03-15 株式会社アルバック 成膜方法及び成膜装置
WO2023286289A1 (ja) * 2021-07-16 2023-01-19 株式会社アルバック 成膜方法及び成膜装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
DE102011086111B4 (de) * 2011-11-10 2016-03-17 Fhr Anlagenbau Gmbh Anordnung zur Einspeisung von HF-Strom für Rohrkathoden
US20130284589A1 (en) * 2012-04-30 2013-10-31 Youming Li Radio frequency tuned substrate biased physical vapor deposition apparatus and method of operation
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
US12209302B2 (en) 2018-12-19 2025-01-28 Evatec Ag Vacuum system and method to deposit a compound layer
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
WO2021148195A1 (en) * 2020-01-24 2021-07-29 Evatec Ag Phase shift controlled sputter system and process

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JPS6459920A (en) * 1987-08-31 1989-03-07 Hitachi Ltd Device for forming thin film
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2018207577A1 (ja) * 2017-05-09 2020-03-12 富士フイルム株式会社 成膜装置および圧電膜の成膜方法
JP7036999B1 (ja) * 2021-07-16 2022-03-15 株式会社アルバック 成膜方法及び成膜装置
WO2023286289A1 (ja) * 2021-07-16 2023-01-19 株式会社アルバック 成膜方法及び成膜装置
KR20230117247A (ko) * 2021-07-16 2023-08-07 가부시키가이샤 아루박 성막 방법 및 성막 장치
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Also Published As

Publication number Publication date
US20100206718A1 (en) 2010-08-19
EP2398930B1 (en) 2015-06-24
WO2010096533A1 (en) 2010-08-26
EP2398930A1 (en) 2011-12-28
KR20110120323A (ko) 2011-11-03
US8540851B2 (en) 2013-09-24
KR101371003B1 (ko) 2014-03-10
EP2398930A4 (en) 2013-07-03

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