KR101371003B1 - 임피던스 매칭 네트워크에 의한 물리 기상 증착법 - Google Patents

임피던스 매칭 네트워크에 의한 물리 기상 증착법 Download PDF

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KR101371003B1
KR101371003B1 KR1020117021524A KR20117021524A KR101371003B1 KR 101371003 B1 KR101371003 B1 KR 101371003B1 KR 1020117021524 A KR1020117021524 A KR 1020117021524A KR 20117021524 A KR20117021524 A KR 20117021524A KR 101371003 B1 KR101371003 B1 KR 101371003B1
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South Korea
Prior art keywords
matching network
impedance matching
dielectric
radio frequency
physical vapor
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Korean (ko)
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KR20110120323A (ko
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유밍 리
제프리 버크메이어
타카미치 후지이
타카유키 나오노
요시카즈 히시누마
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후지필름 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
KR1020117021524A 2009-02-19 2010-02-18 임피던스 매칭 네트워크에 의한 물리 기상 증착법 Active KR101371003B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/389,253 2009-02-19
US12/389,253 US8540851B2 (en) 2009-02-19 2009-02-19 Physical vapor deposition with impedance matching network
PCT/US2010/024549 WO2010096533A1 (en) 2009-02-19 2010-02-18 Physical vapor deposition with impedance matching network

Publications (2)

Publication Number Publication Date
KR20110120323A KR20110120323A (ko) 2011-11-03
KR101371003B1 true KR101371003B1 (ko) 2014-03-10

Family

ID=42558973

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117021524A Active KR101371003B1 (ko) 2009-02-19 2010-02-18 임피던스 매칭 네트워크에 의한 물리 기상 증착법

Country Status (5)

Country Link
US (1) US8540851B2 (enExample)
EP (1) EP2398930B1 (enExample)
JP (1) JP2012518722A (enExample)
KR (1) KR101371003B1 (enExample)
WO (1) WO2010096533A1 (enExample)

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US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
DE102011086111B4 (de) * 2011-11-10 2016-03-17 Fhr Anlagenbau Gmbh Anordnung zur Einspeisung von HF-Strom für Rohrkathoden
US20130284589A1 (en) * 2012-04-30 2013-10-31 Youming Li Radio frequency tuned substrate biased physical vapor deposition apparatus and method of operation
KR102222902B1 (ko) 2014-05-12 2021-03-05 삼성전자주식회사 플라즈마 장비 및 이를 이용한 반도체 소자의 제조 방법
JP6900469B2 (ja) * 2017-05-09 2021-07-07 富士フイルム株式会社 成膜装置および圧電膜の成膜方法
US12209302B2 (en) 2018-12-19 2025-01-28 Evatec Ag Vacuum system and method to deposit a compound layer
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
WO2021148195A1 (en) * 2020-01-24 2021-07-29 Evatec Ag Phase shift controlled sputter system and process
WO2023286289A1 (ja) * 2021-07-16 2023-01-19 株式会社アルバック 成膜方法及び成膜装置
JP7036999B1 (ja) * 2021-07-16 2022-03-15 株式会社アルバック 成膜方法及び成膜装置

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US20070218623A1 (en) * 2006-03-09 2007-09-20 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus

Also Published As

Publication number Publication date
US20100206718A1 (en) 2010-08-19
EP2398930B1 (en) 2015-06-24
WO2010096533A1 (en) 2010-08-26
EP2398930A1 (en) 2011-12-28
JP2012518722A (ja) 2012-08-16
KR20110120323A (ko) 2011-11-03
US8540851B2 (en) 2013-09-24
EP2398930A4 (en) 2013-07-03

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