JP2012513621A5 - - Google Patents

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Publication number
JP2012513621A5
JP2012513621A5 JP2011543475A JP2011543475A JP2012513621A5 JP 2012513621 A5 JP2012513621 A5 JP 2012513621A5 JP 2011543475 A JP2011543475 A JP 2011543475A JP 2011543475 A JP2011543475 A JP 2011543475A JP 2012513621 A5 JP2012513621 A5 JP 2012513621A5
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JP
Japan
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layer
insulating
conductive
layers
wafer
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JP2011543475A
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English (en)
Japanese (ja)
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JP5701772B2 (ja
JP2012513621A (ja
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Priority claimed from SE0802663A external-priority patent/SE533992C2/sv
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Publication of JP2012513621A5 publication Critical patent/JP2012513621A5/ja
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JP2011543475A 2008-12-23 2009-12-23 ビア構造及びその製造方法 Active JP5701772B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0802663A SE533992C2 (sv) 2008-12-23 2008-12-23 Elektrisk anslutning i en struktur med isolerande och ledande lager
SE0802663-5 2008-12-23
PCT/SE2009/051496 WO2010074649A1 (en) 2008-12-23 2009-12-23 Via structure and method thereof

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2015029295A Division JP6093788B2 (ja) 2008-12-23 2015-02-18 デバイスを作る方法、半導体デバイス及び前駆構造物
JP2015029296A Division JP2015146018A (ja) 2008-12-23 2015-02-18 偏向可能マイクロミラーを含むデバイス

Publications (3)

Publication Number Publication Date
JP2012513621A JP2012513621A (ja) 2012-06-14
JP2012513621A5 true JP2012513621A5 (https=) 2013-02-14
JP5701772B2 JP5701772B2 (ja) 2015-04-15

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ID=42288012

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011543475A Active JP5701772B2 (ja) 2008-12-23 2009-12-23 ビア構造及びその製造方法
JP2015029295A Active JP6093788B2 (ja) 2008-12-23 2015-02-18 デバイスを作る方法、半導体デバイス及び前駆構造物
JP2015029296A Pending JP2015146018A (ja) 2008-12-23 2015-02-18 偏向可能マイクロミラーを含むデバイス

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015029295A Active JP6093788B2 (ja) 2008-12-23 2015-02-18 デバイスを作る方法、半導体デバイス及び前駆構造物
JP2015029296A Pending JP2015146018A (ja) 2008-12-23 2015-02-18 偏向可能マイクロミラーを含むデバイス

Country Status (7)

Country Link
US (2) US8592981B2 (https=)
EP (3) EP2383601B1 (https=)
JP (3) JP5701772B2 (https=)
KR (2) KR101659638B1 (https=)
CN (1) CN102362346B (https=)
SE (1) SE533992C2 (https=)
WO (1) WO2010074649A1 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7863752B2 (en) * 2009-02-25 2011-01-04 Capella Photonics, Inc. MEMS device with integrated via and spacer
TWI434803B (zh) * 2010-06-30 2014-04-21 財團法人工業技術研究院 微機電元件與電路晶片之整合裝置及其製造方法
US9036231B2 (en) * 2010-10-20 2015-05-19 Tiansheng ZHOU Micro-electro-mechanical systems micromirrors and micromirror arrays
TW201243287A (en) * 2011-04-28 2012-11-01 Hon Hai Prec Ind Co Ltd Laser range finder
US8754338B2 (en) * 2011-05-28 2014-06-17 Banpil Photonics, Inc. On-chip interconnects with reduced capacitance and method of afbrication
US20120306076A1 (en) * 2011-05-31 2012-12-06 ISC8 Inc. Semiconductor Micro-Connector With Through-Hole Via and a Method for Making the Same
FR2977884B1 (fr) * 2011-07-12 2016-01-29 Commissariat Energie Atomique Procede de realisation d'une structure a membrane suspendue et a electrode enterree
EP2733762B1 (en) 2011-07-15 2018-11-28 Kyulux, Inc. Organic electroluminescence element and compound used therein
CA2845204C (en) 2011-08-16 2016-08-09 Empire Technology Development Llc Techniques for generating audio signals
US9385634B2 (en) 2012-01-26 2016-07-05 Tiansheng ZHOU Rotational type of MEMS electrostatic actuator
DE102012210480B4 (de) * 2012-06-21 2024-05-08 Robert Bosch Gmbh Verfahren zum Herstellen eines Bauelements mit einer elektrischen Durchkontaktierung
ITTO20130031A1 (it) * 2013-01-14 2014-07-15 St Microelectronics Srl Struttura micromeccanica di specchio e relativo procedimento di fabbricazione
US9335544B2 (en) * 2013-03-15 2016-05-10 Rit Wireless Ltd. Electrostatically steerable actuator
DE102013216901A1 (de) * 2013-08-26 2015-02-26 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements
US10123126B2 (en) 2014-02-08 2018-11-06 Empire Technology Development Llc MEMS-based audio speaker system using single sideband modulation
WO2015119627A2 (en) 2014-02-08 2015-08-13 Empire Technology Development Llc Mems-based audio speaker system with modulation element
WO2015119626A1 (en) 2014-02-08 2015-08-13 Empire Technology Development Llc Mems-based structure for pico speaker
US10271146B2 (en) 2014-02-08 2019-04-23 Empire Technology Development Llc MEMS dual comb drive
JP5952850B2 (ja) 2014-03-31 2016-07-13 株式会社豊田中央研究所 Memsデバイス
DE102014210986A1 (de) * 2014-06-10 2015-12-17 Robert Bosch Gmbh Mikromechanische Schichtenanordnung
DE102014211546B4 (de) 2014-06-17 2022-08-25 Robert Bosch Gmbh Mikrospiegelanordnung
JP6492893B2 (ja) * 2015-04-01 2019-04-03 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、および電子機器
KR101688724B1 (ko) * 2015-04-08 2016-12-21 주식회사 스탠딩에그 Mems 장치 제조 방법
JP6578547B2 (ja) 2015-07-23 2019-09-25 株式会社ホンダロック 後方視認装置
TWI638419B (zh) * 2016-04-18 2018-10-11 村田製作所股份有限公司 一種掃描鏡設備與其製造方法
CN106094064B (zh) * 2016-06-08 2017-12-05 无锡微奥科技有限公司 一种热驱动mems微镜阵列器件及其制造方法
US9929290B2 (en) 2016-06-20 2018-03-27 Globalfoundries Inc. Electrical and optical via connections on a same chip
CN106783801B (zh) * 2016-11-18 2020-02-14 浙江大学 高密度soi封装基板及其制备方法
US10204873B2 (en) * 2017-05-08 2019-02-12 Infineon Technologies Americas Corp. Breakable substrate for semiconductor die
CN107172800B (zh) * 2017-06-08 2023-10-17 鹤山市中富兴业电路有限公司 一种用于天线射频传输的pcb板及其制作方法
JP2023110564A (ja) * 2022-01-28 2023-08-09 国立大学法人東京工業大学 パターン形成装置
EP4219391A1 (de) 2022-01-28 2023-08-02 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Durchkontaktierung zum betreiben eines mems-bauteiles in einer hermetischen kavität
US12589402B2 (en) 2022-01-28 2026-03-31 Hanbat National University Industry-Academic Cooperation Foundation Pattern forming apparatus
WO2024197278A2 (en) * 2023-03-23 2024-09-26 The Regents Of The University Of California Co-wiring method for primitive spatial modulation with lightweight operation
WO2024201848A1 (ja) * 2023-03-29 2024-10-03 santec Holdings株式会社 光スイッチ

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3605846B2 (ja) * 1994-03-04 2004-12-22 オムロン株式会社 容量型加速度センサ及び容量型圧力センサ
US5535626A (en) * 1994-12-21 1996-07-16 Breed Technologies, Inc. Sensor having direct-mounted sensing element
US6201629B1 (en) * 1997-08-27 2001-03-13 Microoptical Corporation Torsional micro-mechanical mirror system
JP3610247B2 (ja) * 1998-10-30 2005-01-12 京セラ株式会社 配線基板
US6716657B1 (en) * 2000-05-26 2004-04-06 Agere Systems Inc Method for interconnecting arrays of micromechanical devices
US6431714B1 (en) 2000-10-10 2002-08-13 Nippon Telegraph And Telephone Corporation Micro-mirror apparatus and production method therefor
JP2002139680A (ja) * 2000-10-31 2002-05-17 Pioneer Electronic Corp 空間光変復調器及びこれを用いたホログラム記録再生装置
JP2002307396A (ja) * 2001-04-13 2002-10-23 Olympus Optical Co Ltd アクチュエータ
GB2375185A (en) 2001-05-04 2002-11-06 Kymata Ltd Thick wafer for MEMS fabrication
US6657759B2 (en) * 2001-07-03 2003-12-02 Pts Corporation Bistable micromirror with contactless stops
JP4019847B2 (ja) * 2001-08-17 2007-12-12 株式会社デンソー 機能デバイス
DE10205026C1 (de) 2002-02-07 2003-05-28 Bosch Gmbh Robert Halbleitersubstrat mit einem elektrisch isolierten Bereich, insbesondere zur Vertikalintegration
US6972883B2 (en) * 2002-02-15 2005-12-06 Ricoh Company, Ltd. Vibration mirror, optical scanning device, and image forming using the same, method for making the same, and method for scanning image
US7203393B2 (en) * 2002-03-08 2007-04-10 Movaz Networks, Inc. MEMS micro mirrors driven by electrodes fabricated on another substrate
US20040004775A1 (en) * 2002-07-08 2004-01-08 Turner Arthur Monroe Resonant scanning mirror with inertially coupled activation
US6723579B2 (en) 2002-07-12 2004-04-20 Analog Devices, Inc. Semiconductor wafer comprising micro-machined components and a method for fabricating the semiconductor wafer
JP3974470B2 (ja) * 2002-07-22 2007-09-12 株式会社東芝 半導体装置
JP3779243B2 (ja) 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
US6638607B1 (en) * 2002-10-30 2003-10-28 International Business Machines Corporation Method and structure for producing Z-axis interconnection assembly of printed wiring board elements
SE526366C3 (sv) 2003-03-21 2005-10-26 Silex Microsystems Ab Elektriska anslutningar i substrat
US6862127B1 (en) * 2003-11-01 2005-03-01 Fusao Ishii High performance micromirror arrays and methods of manufacturing the same
JP4252889B2 (ja) * 2003-08-12 2009-04-08 富士通株式会社 マイクロ構造体の製造方法
US6897125B2 (en) * 2003-09-17 2005-05-24 Intel Corporation Methods of forming backside connections on a wafer stack
JP2005236220A (ja) * 2004-02-23 2005-09-02 Dainippon Printing Co Ltd 配線基板と配線基板の製造方法、および半導パッケージ
US7095545B2 (en) * 2004-04-02 2006-08-22 Hewlett-Packard Development Company, L.P. Microelectromechanical device with reset electrode
JP2005305614A (ja) * 2004-04-23 2005-11-04 Seiko Epson Corp 微小構造体の製造方法、微小構造体、波長可変光フィルタ及びマイクロミラー
US7390740B2 (en) * 2004-09-02 2008-06-24 Micron Technology, Inc. Sloped vias in a substrate, spring-like contacts, and methods of making
US7344262B2 (en) 2004-09-29 2008-03-18 Lucent Technologies Inc. MEMS mirror with tip or piston motion for use in adaptive optics
CN100451725C (zh) * 2005-01-05 2009-01-14 日本电信电话株式会社 反射镜器件、反射镜阵列、光开关及其制造方法
EP1835324A4 (en) * 2005-01-05 2010-02-17 Nippon Telegraph & Telephone MIRROR DEVICE, MIRROR ARRANGEMENT, OPTICAL SWITCH, METHOD FOR MIRROR MANUFACTURE AND METHOD FOR PRODUCING A MIRROR SUBSTRATE
JP4573664B2 (ja) * 2005-02-16 2010-11-04 富士通株式会社 マイクロ揺動素子およびその製造方法
EP1883956A4 (en) * 2005-05-18 2011-03-23 Kolo Technologies Inc BY-THE-WAFER CONNECTION
JP4760148B2 (ja) * 2005-06-07 2011-08-31 セイコーエプソン株式会社 構造体の製造方法および構造体
TWI416663B (zh) * 2005-08-26 2013-11-21 日立製作所股份有限公司 Semiconductor device manufacturing method and semiconductor device
US7382513B2 (en) * 2005-10-13 2008-06-03 Miradia Inc. Spatial light modulator with multi-layer landing structures
JP2007180407A (ja) 2005-12-28 2007-07-12 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
WO2007089207A1 (en) 2006-02-01 2007-08-09 Silex Microsystems Ab Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections
EP2002477B1 (en) 2006-03-27 2011-12-21 Philips Intellectual Property & Standards GmbH A fabrication method for a low ohmic through substrate connection for semiconductor carriers
US20080006850A1 (en) 2006-07-10 2008-01-10 Innovative Micro Technology System and method for forming through wafer vias using reverse pulse plating
TWI320944B (en) * 2006-10-23 2010-02-21 Touch Micro System Tech Method for fabricating flow channel capable of balancing air pressure
JP4279308B2 (ja) * 2006-11-02 2009-06-17 アルプス電気株式会社 可変容量素子および可変容量装置
DE102006059073A1 (de) * 2006-12-14 2008-06-19 Robert Bosch Gmbh Mikrospiegelanordnung
JP5052148B2 (ja) * 2007-01-26 2012-10-17 パナソニック株式会社 半導体構造及びその製造方法
JP4364249B2 (ja) * 2007-02-16 2009-11-11 富士通株式会社 マイクロミラー素子およびその製造方法
JP4792143B2 (ja) * 2007-02-22 2011-10-12 株式会社デンソー 半導体装置およびその製造方法

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