JP5701772B2 - ビア構造及びその製造方法 - Google Patents
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Description
本発明の多くの具現化例が、図面を参照することによってここより説明されるであろう。
本発明は、一つの層状構造内の所望の位置にて作動電極に、接地を含む電位を提供することが望まれるMEMSデバイスに関する。
プロジェクターにおけるマイクロミラー、ファイバー光学スイッチ、光学増幅器、ラウドスピーカ膜などのような偏向可能な構造を備えるデバイスにあって、望ましい特徴の一つは、偏向及び/又は前記構造の平面平行動作を制御できることである。原理は、例えば、ファイバー光学スイッチ、光学増幅器及びラウドスピーカ要素などのいかなる偏向可能な構造にも適用できるけれども、以下ではミラーを参照している。
製造プロセスにあって、偏向可能なマイクロミラー及び/又はそのようなミラーのアレイは、一つのプロセスの一つの段階にあって、作動ミラー構造が製造される前に、二つのウェハ(第1ウェハ及び第2ウェハ)が、制御された雰囲気、例えば真空にて、一緒に結合される。前記二つのウェハの一つ(第1ウェハ)は、そこにおいて偏向の間自由に動かされる偏向可能ミラーのため、第1ウェハ内に最終構造にあって必要なスペースを提供するために形成されたくぼみを有する。前記第2ウェハ(適切にはSOIウェハ)は、前記くぼみを覆う蓋を提供する。
Claims (10)
- 層状のマイクロエレクトロニック及び/又はマイクロメカニック構造であって、
外側の第1層及び他の複数の層を含む少なくとも3つの電気的に伝導性の層であって、前記電気的に伝導性の層と絶縁層とが交互に積層される層と、
前記第1層を貫通する導電性のビアであって、前記ビアの径方向周囲が絶縁されているビアと、
前記他の複数の層を貫通してかつ前記第1層内の前記ビアの中に延びる電気的に伝導性のプラグと、
前記他の複数の層の少なくとも一つの選択された層内において前記伝導性のプラグを囲む絶縁エンクロージャであって、前記選択された層内の材料から前記伝導性のプラグを絶縁する絶縁エンクロージャと
を含み、
前記伝導性のプラグは、前記他の複数の層の少なくとも一つにおいて前記伝導性のプラグの周囲の材料から絶縁されていない構造。 - 前記伝導性のプラグは、ポリシリコン、不純物が注入されたシリコン、シリサイド又は金属である、請求項1記載の構造。
- 前記絶縁エンクロージャは絶縁溝を含み、
前記絶縁溝は、前記ビアが前記他の複数の層の一つの層内にルーティングチャネルを形成することによって、前記一つの層内の横方向に信号をルーティングするルーティング構造を形成する、請求項1記載の構造。 - 3つの伝導性の層が存在し、前記絶縁エンクロージャは前記3つの伝導性の層の一つに設けられる、請求項1記載の構造。
- 4つの伝導性の層が存在し、前記絶縁エンクロージャは前記4つの伝導性の層の2つに設けられる、請求項1記載の構造。
- 一つの空洞が前記他の複数の層の一つ以上に形成される、請求項1記載の構造。
- 前記空洞は、前記他の複数の層の底部層に形成される、請求項6記載の構造。
- 層状MEMS構造を形成する方法であって、
前記層状MEMS構造は、
交互に積層された伝導層及び絶縁層と、
フィードスルー構造と
を含み、
前記フィードスルー構造は、前記層状MEMS構造における選択された層内の選択された箇所及び領域に電気的信号又は電位をルーティングし、
前記方法は、
ハンドル層及びデバイス層を有する第1SOIウェハを提供するステップであって、前記第1SOIウェハは、前記ハンドル層と前記デバイス層との間に埋め込まれた絶縁酸化物層まで前記ハンドル層を貫通して延びるビア構造を有するステップと、
ハンドル層及びデバイス層を有する第2SOIウェハを提供するステップと、
前記第1SOIウェハ及び前記第2SOIウェハを結合するステップと、
前記第2SOIウェハの前記ハンドル層を除去するステップと、
前記第1SOIウェハ及び前記第2SOIウェハのいずれかの前記デバイス層において、閉じたループ状に延びる溝の形態で絶縁構造を形成するステップであって、前記閉じたループ内の材料は前記第1SOIウェハ及び前記第2SOIウェハが結合されるときに前記ビア構造と少なくとも部分的にオーバーラップするステップと、
結合された前記第1SOIウェハ及び前記第2SOIウェハの前記デバイス層を貫通するホールを形成するステップであって、前記ホールは下方に前記ビア構造内にまで延びるステップと、
電気的接続を提供するべく伝導性材料によって前記ホールを埋めるステップと
を含む方法。
- 前記溝は少なくとも部分的に絶縁材料で埋められる、請求項8記載の方法。
- 前記伝導性材料は多結晶シリコンである、請求項8又は9記載の方法。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0802663A SE533992C2 (sv) | 2008-12-23 | 2008-12-23 | Elektrisk anslutning i en struktur med isolerande och ledande lager |
SE0802663-5 | 2008-12-23 | ||
PCT/SE2009/051496 WO2010074649A1 (en) | 2008-12-23 | 2009-12-23 | Via structure and method thereof |
Related Child Applications (2)
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JP2015029295A Division JP6093788B2 (ja) | 2008-12-23 | 2015-02-18 | デバイスを作る方法、半導体デバイス及び前駆構造物 |
JP2015029296A Division JP2015146018A (ja) | 2008-12-23 | 2015-02-18 | 偏向可能マイクロミラーを含むデバイス |
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JP2012513621A JP2012513621A (ja) | 2012-06-14 |
JP2012513621A5 JP2012513621A5 (ja) | 2013-02-14 |
JP5701772B2 true JP5701772B2 (ja) | 2015-04-15 |
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JP2011543475A Active JP5701772B2 (ja) | 2008-12-23 | 2009-12-23 | ビア構造及びその製造方法 |
JP2015029296A Pending JP2015146018A (ja) | 2008-12-23 | 2015-02-18 | 偏向可能マイクロミラーを含むデバイス |
JP2015029295A Active JP6093788B2 (ja) | 2008-12-23 | 2015-02-18 | デバイスを作る方法、半導体デバイス及び前駆構造物 |
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JP2015029296A Pending JP2015146018A (ja) | 2008-12-23 | 2015-02-18 | 偏向可能マイクロミラーを含むデバイス |
JP2015029295A Active JP6093788B2 (ja) | 2008-12-23 | 2015-02-18 | デバイスを作る方法、半導体デバイス及び前駆構造物 |
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US (2) | US8592981B2 (ja) |
EP (3) | EP2383601B1 (ja) |
JP (3) | JP5701772B2 (ja) |
KR (2) | KR101659638B1 (ja) |
CN (1) | CN102362346B (ja) |
SE (1) | SE533992C2 (ja) |
WO (1) | WO2010074649A1 (ja) |
Families Citing this family (32)
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US7863752B2 (en) * | 2009-02-25 | 2011-01-04 | Capella Photonics, Inc. | MEMS device with integrated via and spacer |
TWI434803B (zh) * | 2010-06-30 | 2014-04-21 | Ind Tech Res Inst | 微機電元件與電路晶片之整合裝置及其製造方法 |
US9036231B2 (en) * | 2010-10-20 | 2015-05-19 | Tiansheng ZHOU | Micro-electro-mechanical systems micromirrors and micromirror arrays |
TW201243287A (en) * | 2011-04-28 | 2012-11-01 | Hon Hai Prec Ind Co Ltd | Laser range finder |
US8754338B2 (en) * | 2011-05-28 | 2014-06-17 | Banpil Photonics, Inc. | On-chip interconnects with reduced capacitance and method of afbrication |
US20120306076A1 (en) * | 2011-05-31 | 2012-12-06 | ISC8 Inc. | Semiconductor Micro-Connector With Through-Hole Via and a Method for Making the Same |
FR2977884B1 (fr) * | 2011-07-12 | 2016-01-29 | Commissariat Energie Atomique | Procede de realisation d'une structure a membrane suspendue et a electrode enterree |
KR102006506B1 (ko) | 2011-07-15 | 2019-08-01 | 가부시키가이샤 큐럭스 | 유기 일렉트로 루미네선스 소자 및 그것에 사용하는 화합물 |
CA2845204C (en) | 2011-08-16 | 2016-08-09 | Empire Technology Development Llc | Techniques for generating audio signals |
US9385634B2 (en) | 2012-01-26 | 2016-07-05 | Tiansheng ZHOU | Rotational type of MEMS electrostatic actuator |
DE102012210480B4 (de) * | 2012-06-21 | 2024-05-08 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Bauelements mit einer elektrischen Durchkontaktierung |
ITTO20130031A1 (it) * | 2013-01-14 | 2014-07-15 | St Microelectronics Srl | Struttura micromeccanica di specchio e relativo procedimento di fabbricazione |
US9335544B2 (en) * | 2013-03-15 | 2016-05-10 | Rit Wireless Ltd. | Electrostatically steerable actuator |
DE102013216901A1 (de) * | 2013-08-26 | 2015-02-26 | Robert Bosch Gmbh | Mikromechanisches Bauelement und Verfahren zur Herstellung eines mikromechanischen Bauelements |
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JP6093788B2 (ja) | 2017-03-08 |
KR20110110771A (ko) | 2011-10-07 |
EP2377154B1 (en) | 2019-08-14 |
CN102362346A (zh) | 2012-02-22 |
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US9448401B2 (en) | 2016-09-20 |
EP2377154A1 (en) | 2011-10-19 |
KR101659638B1 (ko) | 2016-09-26 |
SE533992C2 (sv) | 2011-03-22 |
JP2015147295A (ja) | 2015-08-20 |
SE0802663A1 (sv) | 2010-06-24 |
KR101710334B1 (ko) | 2017-02-27 |
EP2381289A1 (en) | 2011-10-26 |
EP2377154A4 (en) | 2012-06-27 |
JP2015146018A (ja) | 2015-08-13 |
US20140063580A1 (en) | 2014-03-06 |
EP2383601A1 (en) | 2011-11-02 |
KR20160015392A (ko) | 2016-02-12 |
WO2010074649A1 (en) | 2010-07-01 |
US8592981B2 (en) | 2013-11-26 |
CN102362346B (zh) | 2014-07-30 |
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