JP6093788B2 - デバイスを作る方法、半導体デバイス及び前駆構造物 - Google Patents
デバイスを作る方法、半導体デバイス及び前駆構造物 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000002243 precursor Substances 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 27
- 230000033001 locomotion Effects 0.000 claims description 19
- 238000007373 indentation Methods 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 122
- 235000012431 wafers Nutrition 0.000 description 102
- 239000000463 material Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000004377 microelectronic Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000012935 Averaging Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 210000001520 comb Anatomy 0.000 description 3
- 238000004320 controlled atmosphere Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011529 conductive interlayer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
- G02B6/3584—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/092—Buried interconnects in the substrate or in the lid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/095—Feed-through, via through the lid
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/351—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements
- G02B6/3512—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being reflective, e.g. mirror
- G02B6/3518—Optical coupling means having switching means involving stationary waveguides with moving interposed optical elements the optical element being reflective, e.g. mirror the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Description
本発明の多くの具現化例が、図面を参照することによってここより説明されるであろう。
本発明は、一つの層状構造物内の所望の位置にて作動電極に、接地を含む電位を提供することが望まれるMEMSデバイスに関する。
プロジェクターにおけるマイクロミラー、ファイバー光学スイッチ、光学増幅器、ラウドスピーカ膜などのような偏向可能な構造物を備えるデバイスにおいて、望ましい特徴の一つは、前記構造物の偏向及び/又は平面平行動作を制御できることである。原理は、例えば、ファイバー光学スイッチ、光学増幅器及びラウドスピーカ要素などのいかなる偏向可能な構造物にも適用できるけれども、以下ではミラーを参照している。
製造プロセスにおいて、偏向可能なマイクロミラー及び/又はそのようなミラーのアレイは、一つのプロセスの一つの段階において、作動ミラー構造物が製造される前に、2つのウェハ(第1ウェハ及び第2ウェハ)が、制御された雰囲気、例えば真空にて、一緒に結合される。前記2つのウェハの一つ(第1ウェハ)は、そこにおいて偏向の間自由に動かされる偏向可能ミラーのため、第1ウェハ内に最終構造物において必要なスペースを提供するために形成されたくぼみを有する。前記第2ウェハ(適切にはSOIウェハ)は、前記くぼみを覆う蓋を提供する。
Claims (12)
- 可動マイクロ素子を有するデバイスを作る方法であって、
前記可動マイクロ素子は前記デバイスの空洞の上方に設けられ、
前記デバイスは、少なくとも一つの可動マイクロ素子及び前記可動マイクロ素子のための少なくとも一つのヒンジと、前記可動マイクロ素子の動きを生じさせる作動電極とを含み、
前記方法は、
前記可動マイクロ素子が周囲構造物に接触することなく所望の休止位置から偏向することができる程度の空間を与えるべく中にくぼみが形成された第1ウェハと、第2ウェハであって前記第2ウェハから前記可動マイクロ素子が引き続き作られることにより閉じた空洞が前記第1ウェハ及び第2ウェハ間に形成される第2ウェハとを一緒に結合するステップと、
通気孔に進展する孔又は溝を形成する前駆構造物を画定するマスク構造物を設けるステップであって前記マスク構造物を通る所定深さまでエッチングする第1のエッチングのステップと、
前記可動マイクロ素子及びそのヒンジが完成する前に前記前駆構造物が形成する孔又は溝が前記通気孔に進展することにより前記空洞に対して開口するような制御された態様で前記マスク構造物を通るようにエッチングする第2のエッチングのステップと
を含む方法。 - 前記第2ウェハは、デバイス層、酸化物層及びハンドル層を含むSOIウェハであり、
前記SOIウェハは、前記ヒンジの厚さを画定するべく作られた前記デバイス層内の薄くされた部分を有する請求項1に記載の方法。 - 前記SOIウェハ及び前記第1ウェハが前記デバイス層と一緒に、前記デバイス層が前記くぼみが形成される前記第1ウェハ側に面するように結合されることによって前記第1ウェハ及び第2ウェハ間に閉じた空洞が形成される請求項2に記載の方法。
- 前記ハンドル層は前記マスク構造物が設けられる前に除去される請求項2又は3に記載の方法。
- 前記マスク構造物を通るようにエッチングするステップは、前記SOIウェハの前記デバイス層の中まで延びる前記前駆構造物を設けるべく所定深さまで行われる請求項2、3又は4に記載の方法。
- 前記可動マイクロ素子及びそのヒンジを画定する第2マスク構造物を、輪郭を開口することによって設けるステップをさらに含む請求項1から5のいずれか一項に記載の方法。
- 前記可動マイクロ素子及びそのヒンジが完成する前に前記前駆構造物が形成する孔又は溝が、前記通気孔に進展することにより前記空洞に対して開口するような制御された態様で前記第2マスク構造物を通るエッチングを行うステップをさらに含み、
前記通気孔をエッチングするステップと前記ヒンジの構造物を自由エッチングするステップとが前記第2のエッチングと同じステップにおいて行われ、
前記通気孔は、前記エッチングが前記可動マイクロ素子の前記自由エッチングよりも速く前記通気孔を通るような寸法とされる請求項6に記載の方法。 - 前記前駆構造物並びに前記可動マイクロ素子及びヒンジはそれぞれ、前記第1及び第2のエッチングを行うことによって形成される請求項1から7のいずれか一項に記載の方法。
- 前記前駆構造物は、前記エッチングの速度が前記可動マイクロ素子を作るための溝エッチング速度よりも高くなる程度の大きさに作られる請求項1から8のいずれか一項に記載の方法。
- 前記通気孔をエッチングするステップと前記ヒンジの構造物を自由エッチングするステップとが前記第2のエッチングと同じステップにおいて行われ、
前記通気孔は、前記エッチングが前記可動マイクロ素子の自由エッチングよりも速く前記通気孔を形成するような寸法とされる請求項1に記載の方法。 - 前記可動マイクロ素子はミラー構造物である請求項1から10のいずれか一項に記載の方法。
- 偏向可能構造物と、前記偏向可能構造物を電気的に作動させる電極を構成するウェハ貫通接続部とを含む半導体デバイスであって、
前記電極は前記偏向可能構造物の下方に設けられ、
前記半導体デバイスは、
くぼみが形成された第1ウェハであって、エッチングされることによって前記偏向可能構造物が作られるデバイス層を含む第2ウェハに結合された第1ウェハと、
前記第2ウェハと前記第1ウェハの前記くぼみとによって画定された空洞と、
所定深さを有しかつ前記デバイス層の中へ下方に延びる孔又は溝を含む構造物と
を含み、
前記孔又は溝は、前記エッチングが完了したときに前記第2ウェハを貫通する孔として可視である孔又は溝であり、
前記偏向可能構造物はミラー及び/又はヒンジ構造物である半導体デバイス。
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US7863752B2 (en) * | 2009-02-25 | 2011-01-04 | Capella Photonics, Inc. | MEMS device with integrated via and spacer |
TWI434803B (zh) * | 2010-06-30 | 2014-04-21 | Ind Tech Res Inst | 微機電元件與電路晶片之整合裝置及其製造方法 |
US9036231B2 (en) * | 2010-10-20 | 2015-05-19 | Tiansheng ZHOU | Micro-electro-mechanical systems micromirrors and micromirror arrays |
TW201243287A (en) * | 2011-04-28 | 2012-11-01 | Hon Hai Prec Ind Co Ltd | Laser range finder |
US8754338B2 (en) * | 2011-05-28 | 2014-06-17 | Banpil Photonics, Inc. | On-chip interconnects with reduced capacitance and method of afbrication |
US20120306076A1 (en) * | 2011-05-31 | 2012-12-06 | ISC8 Inc. | Semiconductor Micro-Connector With Through-Hole Via and a Method for Making the Same |
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- 2009-12-23 KR KR1020117014438A patent/KR101659638B1/ko active IP Right Grant
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-
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Also Published As
Publication number | Publication date |
---|---|
WO2010074649A1 (en) | 2010-07-01 |
US9448401B2 (en) | 2016-09-20 |
JP2015147295A (ja) | 2015-08-20 |
EP2383601B1 (en) | 2015-12-23 |
EP2383601A1 (en) | 2011-11-02 |
JP5701772B2 (ja) | 2015-04-15 |
JP2012513621A (ja) | 2012-06-14 |
KR20160015392A (ko) | 2016-02-12 |
KR20110110771A (ko) | 2011-10-07 |
JP2015146018A (ja) | 2015-08-13 |
US8592981B2 (en) | 2013-11-26 |
EP2377154B1 (en) | 2019-08-14 |
EP2377154A1 (en) | 2011-10-19 |
SE533992C2 (sv) | 2011-03-22 |
SE0802663A1 (sv) | 2010-06-24 |
US20140063580A1 (en) | 2014-03-06 |
US20120018898A1 (en) | 2012-01-26 |
KR101659638B1 (ko) | 2016-09-26 |
EP2377154A4 (en) | 2012-06-27 |
CN102362346A (zh) | 2012-02-22 |
CN102362346B (zh) | 2014-07-30 |
KR101710334B1 (ko) | 2017-02-27 |
EP2381289A1 (en) | 2011-10-26 |
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