JP2012190794A - 発光装置、及び発光装置を用いた電子機器 - Google Patents
発光装置、及び発光装置を用いた電子機器 Download PDFInfo
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- JP2012190794A JP2012190794A JP2012037606A JP2012037606A JP2012190794A JP 2012190794 A JP2012190794 A JP 2012190794A JP 2012037606 A JP2012037606 A JP 2012037606A JP 2012037606 A JP2012037606 A JP 2012037606A JP 2012190794 A JP2012190794 A JP 2012190794A
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】第1の基板上に形成された第1の電極層と発光層と第2の電極層からなる発光素子と、第1の基板上に形成された構造体と、第1の基板と対向して設けられた第2の基板と、第2の基板との間に設けられた接着層と、を有し、発光層は構造体により分離され、構造体と接着層、または構造体と第2の電極層の密着性を強めることにより、発光素子が破壊されることを抑制した信頼性の高い発光装置を実現することができる。
【選択図】図1
Description
本実施の形態では、本発明の発光装置の一態様について、発光装置の構成を図1(A)及び図1(B)を用いて説明し、次に発光装置の作製方法を図2乃至図5を用いて説明を行う。
図1(A)は、発光装置の画素の一部分であり、第1の基板100を第2の電極層122側からみた上面図を示し、図1(B)は、図1(A)の破線A1−A2の断面図に相当する。なお、図1(A)の上面図においては、本発明の構成要素である一部(例えば、隔壁124など)を図面の煩雑を避けるために省略している。
まず、第3の基板180上に第1の剥離層101を形成し、第1の剥離層101上に第1のバッファ層104を形成する。第1のバッファ層104は、第1の剥離層101を大気に曝すことなく連続して形成することが好適である。連続して形成することにより、第1の剥離層101と第1のバッファ層104との間にゴミや、不純物の混入を防ぐことができる(図2(A)参照)。
本発明の発光装置に用いる構造体について、先の実施の形態1に示した構造体126と異なる構成について、図6(A)乃至図6(D)を用いて説明する。
本実施の形態においては、先の実施の形態1に示した構造体126、または実施の形態2に示した構造体206、構造体208、構造体210、構造体214を使用した発光装置の各画素の配置について、図7を用いて説明を行う。
本実施の形態においては、実施の形態1で示した第1の電極層118、発光層120、及び第2の電極層122からなる発光素子130の詳細について、図8(A)、及び図8(B)を用いて説明を行う。
図8(A)に示す発光素子130は、一対の電極(第1の電極層118、第2の電極層122)間に発光領域を含む発光層120が挟まれた構造を有する。なお、以下の本実施の形態の説明においては、例として、第1の電極層118を陽極として用い、第2の電極層122を陰極として用いるものとする。
本実施の形態では、発光装置の一形態である表示装置(表示パネル、または発光パネルともいう)の外観及び断面について、図9を用いて説明する。図9(A)は、第1の基板上に形成された発光素子駆動用トランジスタ、及び発光素子と、第2の基板上に形成された遮光膜、カラーフィルタ、及びオーバーコートと、を封止したパネルの上面図であり、図9(B)は、図9(A)の破線B1−B2における断面図に相当する。
本実施の形態では、先の実施の形態5で説明した発光装置を組み込んだ携帯電話について、図10(A)及び、図10(B)を用いて説明する。
本実施の形態では、実施の形態1乃至5に示す発光装置を含む電子機器について説明する。
101 剥離層
102 接着層
104 バッファ層
106 ゲート電極層
108 ゲート絶縁層
110 半導体層
112a ソース電極層
112b ドレイン電極層
114 絶縁層
116 絶縁層
118 電極層
120 発光層
120a 電荷発生層
122 電極層
124 隔壁
126 構造体
130 発光素子
150 トランジスタ
152 トランジスタ
154 ゲート配線
156 ソース配線
160 基板
161 剥離層
162 バッファ層
163 接着層
164 遮光膜
166 カラーフィルタ
168 オーバーコート
170 接着層
180 基板
190 基板
202 構造体
204 構造体
206 構造体
208 構造体
210 構造体
212 隔壁
214 構造体
240 構造体
242 構造体
244 構造体
246 構造体
248 陰極共通配線層
400 筐体
402 操作ボタン
404 表示部
406 操作部
4501 基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 接着層
4506 基板
4509 トランジスタ
4510 トランジスタ
4511 トランジスタ
4513 電極層
4514 発光層
4515 電極層
4518 FPC
4519 異方性導電膜
4521 遮光膜
4522 カラーフィルタ
4523 オーバーコート
4550 発光素子
4552 隔壁
4554 構造体
4556 貫通電極
9101 筐体
9102 支持台
9103 表示部
9104 スピーカー部
9105 ビデオ入力端子
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9401 本体
9402 筐体
9403 表示部
9404 音声入力部
9405 音声出力部
9406 操作キー
9407 外部接続ポート
9408 アンテナ
9501 本体
9502 表示部
9503 筐体
9504 外部接続ポート
9505 リモコン受信部
9506 受像部
9507 バッテリー
9508 音声入力部
9509 操作キー
9510 接眼部
Claims (9)
- 第1の基板上に形成された第1の電極層と、
前記第1の電極層と接して形成された発光層と、
前記発光層と接して形成された第2の電極層と、を有する発光素子と、
前記第1の基板上に形成された構造体と、
前記第1の基板と対向して設けられた第2の基板と、
前記第1の基板と前記第2の基板との間に設けられた接着層と、を有し、
前記発光層は、前記構造体により分離され、
前記構造体は、少なくとも一部分が前記接着層と接する発光装置。 - 第1の基板上に形成された第1の電極層と、
前記第1の電極層と接して形成された発光層と、
前記発光層と接して形成された第2の電極層と、を有する発光素子と、
前記第1の基板上に形成された構造体と、
前記第1の基板と対向して設けられた第2の基板と、
前記第1の基板と前記第2の基板との間に設けられた接着層と、を有し、
前記発光層は、前記構造体により分離され、
前記構造体は、少なくとも一部分が前記第2の電極層と接する発光装置。 - 請求項1または請求項2において、
前記第1の基板、及び前記第2の基板は、可撓性を有する発光装置。 - 請求項1乃至請求項3のいずれか一において、
前記第1の電極は、トランジスタに接続されている発光装置。 - 請求項1乃至請求項4のいずれか一において、
前記第2の基板は、特定の波長領域の光を透過する有色層を有している発光装置。 - 請求項1乃至請求項5のいずれか一において、
前記発光層は、正孔注入層と、正孔輸送層と、電子輸送層と、電子注入層と、を有している発光装置。 - 請求項1乃至請求項6のいずれか一において、
前記発光素子からの発光は、白色発光が得られる発光装置。 - 請求項1乃至請求項7のいずれか一において、
前記発光素子からの発光は、前記第2の基板を透過して取り出される発光装置。 - 請求項1乃至請求項8のいずれか一に記載の発光装置を用いた電子機器。
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Cited By (55)
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KR20140148310A (ko) | 2013-06-21 | 2014-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
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JP2022113739A (ja) * | 2013-11-27 | 2022-08-04 | 株式会社半導体エネルギー研究所 | 表示装置 |
WO2022175781A1 (ja) * | 2021-02-19 | 2022-08-25 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
WO2022180468A1 (ja) * | 2021-02-25 | 2022-09-01 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 |
US11818856B2 (en) | 2014-10-28 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI588718B (zh) * | 2012-03-28 | 2017-06-21 | 友達光電股份有限公司 | 觸控面板及其製造方法 |
KR102082793B1 (ko) | 2012-05-10 | 2020-02-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
JP6302186B2 (ja) | 2012-08-01 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2014032817A (ja) * | 2012-08-02 | 2014-02-20 | Sony Corp | 表示装置およびその製造方法、並びに電子機器の製造方法 |
KR20140050994A (ko) * | 2012-10-22 | 2014-04-30 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
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JP6490901B2 (ja) | 2013-03-14 | 2019-03-27 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP6136578B2 (ja) * | 2013-05-29 | 2017-05-31 | ソニー株式会社 | 表示装置および表示装置の製造方法ならびに電子機器 |
KR20140143629A (ko) * | 2013-06-07 | 2014-12-17 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
KR102090713B1 (ko) | 2013-06-25 | 2020-03-19 | 삼성디스플레이 주식회사 | 가요성 표시 패널 및 상기 가요성 표시 패널의 제조 방법 |
KR20150004522A (ko) * | 2013-07-03 | 2015-01-13 | 삼성디스플레이 주식회사 | 유기 발광 다이오드 및 유기 발광 표시 장치 |
KR20210070393A (ko) | 2013-07-12 | 2021-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
US9269914B2 (en) * | 2013-08-01 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
KR102092842B1 (ko) * | 2013-08-07 | 2020-04-16 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
KR102288238B1 (ko) | 2013-09-03 | 2021-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
KR102139577B1 (ko) | 2013-10-24 | 2020-07-31 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
WO2015083029A1 (en) * | 2013-12-02 | 2015-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP2015128003A (ja) | 2013-12-27 | 2015-07-09 | ソニー株式会社 | 表示装置および電子機器 |
KR102358935B1 (ko) | 2014-02-12 | 2022-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
TWI654736B (zh) | 2014-02-14 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
WO2015128778A1 (en) | 2014-02-28 | 2015-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
KR102511325B1 (ko) | 2014-04-18 | 2023-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 동작 방법 |
US10656799B2 (en) | 2014-05-02 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and operation method thereof |
TWI655442B (zh) | 2014-05-02 | 2019-04-01 | 日商半導體能源研究所股份有限公司 | 輸入/輸出裝置 |
DE112015002144T5 (de) | 2014-05-06 | 2017-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Elektronische Vorrichtung |
KR20150141338A (ko) * | 2014-06-10 | 2015-12-18 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
TWI559510B (zh) * | 2014-06-23 | 2016-11-21 | 群創光電股份有限公司 | 顯示裝置 |
CN104112764A (zh) * | 2014-07-02 | 2014-10-22 | 京东方科技集团股份有限公司 | 一种amoled显示面板及其制备方法和显示装置 |
US9515099B2 (en) * | 2014-07-31 | 2016-12-06 | Lg Display Co., Ltd. | Flexible display device with wire having reinforced portion and manufacturing method for the same |
JP2016081562A (ja) * | 2014-10-09 | 2016-05-16 | ソニー株式会社 | 表示装置、表示装置の製造方法および電子機器 |
KR20210068638A (ko) | 2014-10-28 | 2021-06-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
JP6660940B2 (ja) * | 2015-03-24 | 2020-03-11 | 株式会社カネカ | 透明電極付き基板の製造方法 |
CN104952905A (zh) * | 2015-05-06 | 2015-09-30 | 京东方科技集团股份有限公司 | 有机发光显示面板及其制备方法、显示装置 |
KR102424597B1 (ko) * | 2015-06-30 | 2022-07-25 | 엘지디스플레이 주식회사 | 플렉서블 유기발광다이오드 표시장치 및 그 제조 방법 |
KR102571667B1 (ko) * | 2015-06-30 | 2023-08-30 | 엘지디스플레이 주식회사 | 유기발광표시장치 |
KR102415052B1 (ko) * | 2015-09-18 | 2022-07-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102515628B1 (ko) * | 2015-12-31 | 2023-03-29 | 엘지디스플레이 주식회사 | 유기 발광 표시 패널 |
CN107180920A (zh) * | 2016-03-11 | 2017-09-19 | 上海和辉光电有限公司 | 一种有机发光二极管显示器件及其制造方法 |
US10804407B2 (en) | 2016-05-12 | 2020-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and stack processing apparatus |
JP6736385B2 (ja) | 2016-07-01 | 2020-08-05 | 株式会社ジャパンディスプレイ | 表示装置 |
US20180254430A1 (en) * | 2016-10-09 | 2018-09-06 | Boe Technology Group Co., Ltd. | Organic light emitting diode display panel, display apparatus having the same, and fabricating method thereof |
CN108091670B (zh) * | 2016-11-22 | 2022-04-15 | 天马微电子股份有限公司 | 显示装置及其制造方法 |
KR102604310B1 (ko) * | 2016-12-30 | 2023-11-20 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
CN106910841B (zh) * | 2017-03-31 | 2019-08-23 | 昆山国显光电有限公司 | 阵列基板及其制造方法和有机发光显示器 |
CN110603642B (zh) * | 2017-05-17 | 2022-07-22 | 苹果公司 | 具有减少的侧向泄漏的有机发光二极管显示器 |
KR102524429B1 (ko) * | 2017-10-31 | 2023-04-20 | 엘지디스플레이 주식회사 | 투명 디스플레이 장치 |
KR20190068315A (ko) * | 2017-12-08 | 2019-06-18 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
KR102503183B1 (ko) * | 2017-12-20 | 2023-02-22 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
JP7293190B2 (ja) | 2018-03-16 | 2023-06-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN108766980B (zh) * | 2018-05-28 | 2021-02-23 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及显示装置 |
CN109524576B (zh) * | 2018-12-13 | 2020-12-29 | 合肥鑫晟光电科技有限公司 | 一种oled显示基板及其制备方法、显示装置 |
US11482578B2 (en) * | 2019-03-27 | 2022-10-25 | Beijing Boe Technology Development Co., Ltd. | Display substrate, display apparatus, and method of fabricating display substrate |
WO2020227928A1 (en) * | 2019-05-14 | 2020-11-19 | Boe Technology Group Co., Ltd. | Display panel, manufacturing method thereof, and display apparatus |
WO2022050984A1 (en) | 2020-09-04 | 2022-03-10 | Applied Materials, Inc. | Methods of fabricating oled panel with inorganic pixel encapsulating barrier |
CN112164763B (zh) * | 2020-09-29 | 2023-05-26 | 京东方科技集团股份有限公司 | 有机发光显示面板、制备有机发光显示面板的方法及显示装置 |
CN112133734B (zh) * | 2020-09-29 | 2022-08-30 | 湖北长江新型显示产业创新中心有限公司 | 显示面板及显示装置 |
US20220344417A1 (en) * | 2021-04-23 | 2022-10-27 | Applied Materials, Inc. | Conductive oxide overhang structures for oled devices |
US11665931B2 (en) | 2021-08-04 | 2023-05-30 | Applied Materials, Inc. | Descending etching resistance in advanced substrate patterning |
CN114078942B (zh) * | 2021-11-01 | 2023-05-02 | 武汉华星光电半导体显示技术有限公司 | Oled显示模组和oled显示装置 |
US11610954B1 (en) | 2022-02-14 | 2023-03-21 | Applied Materials, Inc. | OLED panel with advanced sub-pixel overhangs |
US11552143B1 (en) * | 2022-04-29 | 2023-01-10 | Applied Materials, Inc. | OLED panel with trench overhang structures |
US11882709B2 (en) | 2022-05-12 | 2024-01-23 | Applied Materials, Inc. | High resolution advanced OLED sub-pixel circuit and patterning method |
US11527732B1 (en) | 2022-05-31 | 2022-12-13 | Applied Materials, Inc. | OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007095611A (ja) * | 2005-09-30 | 2007-04-12 | Seiko Epson Corp | 表示装置および電子機器、表示装置の製造方法 |
JP2007329448A (ja) * | 2006-06-07 | 2007-12-20 | Samsung Sdi Co Ltd | 有機発光ディスプレイ装置 |
JP2008159438A (ja) * | 2006-12-25 | 2008-07-10 | Kyocera Corp | 有機elディスプレイの製造方法 |
JP2009181766A (ja) * | 2008-01-30 | 2009-08-13 | Kyocera Corp | 有機elディスプレイ及び有機elディスプレイの製造方法 |
JP2010040520A (ja) * | 2008-07-10 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
JP2010073683A (ja) * | 2008-08-20 | 2010-04-02 | Semiconductor Energy Lab Co Ltd | フレキシブル発光装置及びその作製方法 |
JP2010153813A (ja) * | 2008-11-18 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法、並びに、携帯電話機 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1758169A3 (en) | 1996-08-27 | 2007-05-23 | Seiko Epson Corporation | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same |
JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
JP3942770B2 (ja) * | 1999-09-22 | 2007-07-11 | 株式会社半導体エネルギー研究所 | El表示装置及び電子装置 |
JP4004709B2 (ja) * | 2000-03-30 | 2007-11-07 | パイオニア株式会社 | 有機エレクトロルミネッセンス表示パネル及びその製造方法 |
US6348359B1 (en) * | 2000-09-22 | 2002-02-19 | Eastman Kodak Company | Cathode contact structures in organic electroluminescent devices |
US6626721B1 (en) * | 2000-09-22 | 2003-09-30 | Eastman Kodak Company | Organic electroluminescent device with supplemental cathode bus conductor |
TW522577B (en) | 2000-11-10 | 2003-03-01 | Semiconductor Energy Lab | Light emitting device |
SG118110A1 (en) * | 2001-02-01 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting element and display device using the element |
JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW564471B (en) | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP2004127933A (ja) * | 2002-09-11 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
JP4664604B2 (ja) | 2004-02-18 | 2011-04-06 | Tdk株式会社 | 画像表示装置 |
JP4419691B2 (ja) * | 2004-06-02 | 2010-02-24 | セイコーエプソン株式会社 | 有機el装置、電子機器 |
JP4879541B2 (ja) * | 2004-09-29 | 2012-02-22 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
EP3614442A3 (en) * | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP4887497B2 (ja) * | 2006-10-31 | 2012-02-29 | エルジー ディスプレイ カンパニー リミテッド | 有機el装置 |
US20100105275A1 (en) | 2007-03-02 | 2010-04-29 | Pioneer Corporation | Organic electroluminescence display panel and method of manufacturing the same |
JP4340982B2 (ja) * | 2007-05-18 | 2009-10-07 | ソニー株式会社 | 表示装置の製造方法 |
US7834543B2 (en) | 2007-07-03 | 2010-11-16 | Canon Kabushiki Kaisha | Organic EL display apparatus and method of manufacturing the same |
KR100833775B1 (ko) * | 2007-08-03 | 2008-05-29 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
KR100964225B1 (ko) * | 2008-03-19 | 2010-06-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
JP2010008480A (ja) * | 2008-06-24 | 2010-01-14 | Hitachi Displays Ltd | 表示装置 |
JP5002553B2 (ja) * | 2008-07-30 | 2012-08-15 | 株式会社東芝 | 自発光型素子及びその製造方法 |
EP2178133B1 (en) * | 2008-10-16 | 2019-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device |
KR100963074B1 (ko) * | 2008-10-17 | 2010-06-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
TWI607670B (zh) * | 2009-01-08 | 2017-12-01 | 半導體能源研究所股份有限公司 | 發光裝置及電子裝置 |
JP2010257957A (ja) * | 2009-04-01 | 2010-11-11 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置 |
JP5573018B2 (ja) * | 2009-06-23 | 2014-08-20 | セイコーエプソン株式会社 | 有機el装置及び電子機器 |
JP5663231B2 (ja) * | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 発光装置 |
-
2012
- 2012-02-14 KR KR1020137023746A patent/KR102010429B1/ko active IP Right Grant
- 2012-02-14 KR KR1020197023157A patent/KR102109009B1/ko active IP Right Grant
- 2012-02-14 WO PCT/JP2012/053904 patent/WO2012115016A1/en active Application Filing
- 2012-02-20 TW TW101105513A patent/TWI545819B/zh active
- 2012-02-23 JP JP2012037606A patent/JP6050006B2/ja not_active Expired - Fee Related
- 2012-02-24 US US13/404,692 patent/US9337244B2/en active Active
-
2016
- 2016-11-24 JP JP2016228113A patent/JP2017037860A/ja not_active Withdrawn
-
2019
- 2019-04-05 JP JP2019072443A patent/JP6837510B2/ja active Active
-
2021
- 2021-02-09 JP JP2021019040A patent/JP2021073672A/ja not_active Withdrawn
-
2022
- 2022-03-04 JP JP2022033248A patent/JP2022081576A/ja not_active Withdrawn
-
2023
- 2023-11-30 JP JP2023202753A patent/JP2024023470A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007095611A (ja) * | 2005-09-30 | 2007-04-12 | Seiko Epson Corp | 表示装置および電子機器、表示装置の製造方法 |
JP2007329448A (ja) * | 2006-06-07 | 2007-12-20 | Samsung Sdi Co Ltd | 有機発光ディスプレイ装置 |
JP2008159438A (ja) * | 2006-12-25 | 2008-07-10 | Kyocera Corp | 有機elディスプレイの製造方法 |
JP2009181766A (ja) * | 2008-01-30 | 2009-08-13 | Kyocera Corp | 有機elディスプレイ及び有機elディスプレイの製造方法 |
JP2010040520A (ja) * | 2008-07-10 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
JP2010073683A (ja) * | 2008-08-20 | 2010-04-02 | Semiconductor Energy Lab Co Ltd | フレキシブル発光装置及びその作製方法 |
JP2010153813A (ja) * | 2008-11-18 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法、並びに、携帯電話機 |
Cited By (146)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9728693B2 (en) | 2012-10-17 | 2017-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device comprising partition including overhang portion |
JP2014082132A (ja) * | 2012-10-17 | 2014-05-08 | Semiconductor Energy Lab Co Ltd | 発光装置及びその製造方法 |
JP2014082133A (ja) * | 2012-10-17 | 2014-05-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
JP2014099402A (ja) * | 2012-11-13 | 2014-05-29 | Boe Technology Group Co Ltd | 発光ディスプレイバックプレーン、ディスプレイデバイス、及び画素定義層の製造方法 |
US10080302B2 (en) | 2013-04-24 | 2018-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10448531B2 (en) | 2013-04-24 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US11321039B2 (en) | 2013-06-07 | 2022-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Information processor and program |
KR20210148385A (ko) | 2013-06-07 | 2021-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 및 프로그램 |
JP2021166056A (ja) * | 2013-06-07 | 2021-10-14 | 株式会社半導体エネルギー研究所 | 入出力装置 |
US10628103B2 (en) | 2013-06-07 | 2020-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Information processor and program |
US10241544B2 (en) | 2013-06-21 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Information processor |
KR20210014188A (ko) | 2013-06-21 | 2021-02-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
KR20200130219A (ko) | 2013-06-21 | 2020-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
US9927840B2 (en) | 2013-06-21 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Information processor for processing and displaying image data on a bendable display unit |
KR20230127179A (ko) | 2013-06-21 | 2023-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
KR20190096321A (ko) | 2013-06-21 | 2019-08-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
KR20230014804A (ko) | 2013-06-21 | 2023-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
KR20140148310A (ko) | 2013-06-21 | 2014-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
KR20220065089A (ko) | 2013-07-02 | 2022-05-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
KR20230159623A (ko) | 2013-07-02 | 2023-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
KR102601782B1 (ko) * | 2013-07-02 | 2023-11-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
US11720218B2 (en) | 2013-07-02 | 2023-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
US11221720B2 (en) | 2013-07-02 | 2022-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
KR20230014832A (ko) | 2013-07-02 | 2023-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
US10452104B2 (en) | 2013-07-02 | 2019-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
KR20210075223A (ko) | 2013-07-02 | 2021-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
KR20160028453A (ko) | 2013-07-02 | 2016-03-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
US9753495B2 (en) | 2013-07-02 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
DE102014212911A1 (de) | 2013-07-12 | 2015-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Datenverarbeitungsvorrichtung und Datenverarbeitungssystem |
US9857844B2 (en) | 2013-07-22 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2021144232A (ja) * | 2013-07-26 | 2021-09-24 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
US11340657B2 (en) | 2013-08-02 | 2022-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US11836007B2 (en) | 2013-08-02 | 2023-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR20220057642A (ko) | 2013-08-02 | 2022-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20190039624A (ko) | 2013-08-02 | 2019-04-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20160037942A (ko) | 2013-08-02 | 2016-04-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11009913B2 (en) | 2013-08-02 | 2021-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10170524B2 (en) | 2013-08-20 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US9377817B2 (en) | 2013-08-20 | 2016-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR20150021467A (ko) | 2013-08-20 | 2015-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11899297B2 (en) | 2013-08-30 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US10613362B2 (en) | 2013-08-30 | 2020-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US11662615B2 (en) | 2013-08-30 | 2023-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US9455418B2 (en) | 2013-08-30 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Support supply apparatus and method for supplying support |
US9764488B2 (en) | 2013-08-30 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Device for forming separation starting point, stack manufacturing apparatus, and method for forming separation starting point |
KR20200139848A (ko) | 2013-08-30 | 2020-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20230014843A (ko) | 2013-08-30 | 2023-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20220132022A (ko) | 2013-08-30 | 2022-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US9582043B2 (en) | 2013-08-30 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR20230157519A (ko) | 2013-08-30 | 2023-11-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11556021B2 (en) | 2013-08-30 | 2023-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
CN104425319A (zh) * | 2013-08-30 | 2015-03-18 | 株式会社半导体能源研究所 | 支撑体供应装置、叠层体制造装置 |
KR20150026978A (ko) | 2013-08-30 | 2015-03-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 지지체의 공급 장치, 지지체의 공급 방법, 반도체 장치, 발광 장치 및 표시 장치 |
TWI671141B (zh) * | 2013-08-30 | 2019-09-11 | 半導體能源研究所股份有限公司 | 支撐體供應裝置及供應支撐體的方法 |
KR20150026981A (ko) | 2013-08-30 | 2015-03-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 기점의 형성 장치, 적층체의 제작 장치, 및 박리 기점의 형성 방법 |
US10065808B2 (en) | 2013-08-30 | 2018-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Support supply apparatus and method for supplying support |
KR20210090742A (ko) | 2013-08-30 | 2021-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US11061264B2 (en) | 2013-08-30 | 2021-07-13 | Seminconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR20160046874A (ko) | 2013-08-30 | 2016-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US10139660B2 (en) | 2013-08-30 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR102419551B1 (ko) * | 2013-09-18 | 2022-07-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20150032482A (ko) * | 2013-09-18 | 2015-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
DE102014220430A1 (de) | 2013-10-11 | 2015-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Datenverarbeitungsvorrichtung |
KR20230019903A (ko) | 2013-10-11 | 2023-02-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
KR20190130117A (ko) | 2013-10-11 | 2019-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 정보 처리 장치 |
US9818325B2 (en) | 2013-11-01 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Data processor and method for displaying data thereby |
US9892710B2 (en) | 2013-11-15 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Data processor |
US11244648B2 (en) | 2013-11-15 | 2022-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Data processor |
KR20160105382A (ko) | 2013-11-15 | 2016-09-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
US10755667B2 (en) | 2013-11-15 | 2020-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Data processor |
KR20210109668A (ko) | 2013-11-15 | 2021-09-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
KR20230026534A (ko) | 2013-11-15 | 2023-02-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 |
US11626083B2 (en) | 2013-11-15 | 2023-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Data processor |
US11785826B2 (en) | 2013-11-27 | 2023-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
JP7372394B2 (ja) | 2013-11-27 | 2023-10-31 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2022113739A (ja) * | 2013-11-27 | 2022-08-04 | 株式会社半導体エネルギー研究所 | 表示装置 |
US10592094B2 (en) | 2013-11-29 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and driving method thereof |
KR20160091997A (ko) | 2013-11-29 | 2016-08-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 및 이의 구동 방법 |
KR20210134810A (ko) | 2013-11-29 | 2021-11-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 및 이의 구동 방법 |
US9875015B2 (en) | 2013-11-29 | 2018-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and driving method thereof |
US11294561B2 (en) | 2013-11-29 | 2022-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device having flexible position input portion and driving method thereof |
US11714542B2 (en) | 2013-11-29 | 2023-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device and driving method thereof for a flexible touchscreen device accepting input on the front, rear and sides |
KR20240033121A (ko) | 2013-11-29 | 2024-03-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 데이터 처리 장치 및 이의 구동 방법 |
US11983793B2 (en) | 2013-12-02 | 2024-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Foldable display device including a plurality of regions |
US11475532B2 (en) | 2013-12-02 | 2022-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Foldable display device comprising a plurality of regions |
KR20220130650A (ko) | 2013-12-02 | 2022-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20240051095A (ko) | 2013-12-02 | 2024-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20230149790A (ko) | 2013-12-02 | 2023-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20230092859A (ko) | 2013-12-02 | 2023-06-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20210127651A (ko) | 2013-12-02 | 2021-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US9952626B2 (en) | 2013-12-20 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9229481B2 (en) | 2013-12-20 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20160120745A (ko) | 2014-02-13 | 2016-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 패널 및 정보 처리 장치 |
KR20230021063A (ko) | 2014-03-12 | 2023-02-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 정보 처리 장치 |
KR20220045136A (ko) | 2014-03-12 | 2022-04-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 정보 처리 장치 |
KR20150106834A (ko) | 2014-03-12 | 2015-09-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 정보 처리 장치 |
US10228729B2 (en) | 2014-03-12 | 2019-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US10007299B2 (en) | 2014-03-12 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and data processing device |
US9870106B2 (en) | 2014-03-13 | 2018-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Matrix of sensor units each comprising a first sensing element and a second sensing element |
WO2015151659A1 (ja) * | 2014-03-31 | 2015-10-08 | 株式会社 東芝 | フレキシブル有機el表示装置の製造方法 |
JP2015195094A (ja) * | 2014-03-31 | 2015-11-05 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
DE112015001780B4 (de) | 2014-04-11 | 2022-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierende Vorrichtung |
US9755167B2 (en) | 2014-04-11 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
KR20160145673A (ko) | 2014-04-11 | 2016-12-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
US10497082B2 (en) | 2014-05-02 | 2019-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Information processing device |
US9614019B2 (en) | 2014-05-30 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Input device |
US10372163B2 (en) | 2014-05-30 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Input device comprising sensor panel, information processing device comprising input device |
US10372272B2 (en) | 2014-05-30 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Sensor, input device, and input/output device |
JP2016001526A (ja) * | 2014-06-11 | 2016-01-07 | 株式会社ジャパンディスプレイ | 表示装置 |
US9455281B2 (en) | 2014-06-19 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, touch panel module, and display device |
US10468625B2 (en) | 2014-06-27 | 2019-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, and electronic device |
KR20160001642A (ko) | 2014-06-27 | 2016-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 모듈, 전자 기기, 발광 장치의 제작 방법 |
US9466811B2 (en) | 2014-06-27 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and manufacturing method of light-emitting device |
US11437601B2 (en) | 2014-07-25 | 2022-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting semiconductor device with a plurality of spacers between two substrates |
KR20160012936A (ko) | 2014-07-25 | 2016-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 적층 구조물, 입출력 장치, 정보 처리 장치, 적층 구조물의 제작 방법 |
JP2016039029A (ja) * | 2014-08-07 | 2016-03-22 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネセンス表示装置 |
US9933812B2 (en) | 2014-09-05 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, and data processor |
US11360590B2 (en) | 2014-10-10 | 2022-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, device, and data processor |
US10331247B2 (en) | 2014-10-10 | 2019-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, device, and data processor |
US11818856B2 (en) | 2014-10-28 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
JP7462013B2 (ja) | 2014-10-28 | 2024-04-04 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2016126338A (ja) * | 2014-12-29 | 2016-07-11 | 株式会社半導体エネルギー研究所 | 機能パネル及びその作製方法 |
KR20160080081A (ko) | 2014-12-29 | 2016-07-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기능 패널과 그 제작 방법 |
US10103350B2 (en) | 2014-12-29 | 2018-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Function panel and manufacturing method thereof |
KR102469844B1 (ko) * | 2014-12-29 | 2022-11-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기능 패널과 그 제작 방법 |
US9685627B2 (en) | 2014-12-29 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Function panel and manufacturing method thereof |
US10241630B2 (en) | 2015-02-13 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, functional module, light-emitting module, display module, location data input module, light-emitting device, lighting device, display device, data processing device, and manufacturing method of functional panel |
KR20160100253A (ko) | 2015-02-13 | 2016-08-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기능 패널, 기능 모듈, 발광 모듈, 표시 모듈, 위치 정보 입력 모듈, 발광 장치, 조명 장치, 표시 장치, 정보 처리 장치, 기능 패널의 제작 방법 |
US10319943B2 (en) | 2015-03-18 | 2019-06-11 | Japan Display Inc. | Display device |
JP2016177878A (ja) * | 2015-03-18 | 2016-10-06 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
US10347862B2 (en) | 2015-04-09 | 2019-07-09 | Sharp Kabushiki Kaisha | EL display device and method for manufacturing EL display device |
WO2016163367A1 (ja) * | 2015-04-09 | 2016-10-13 | シャープ株式会社 | El表示装置およびel表示装置の製造方法 |
KR20160127197A (ko) * | 2015-04-23 | 2016-11-03 | 엘지디스플레이 주식회사 | 유기발광표시장치 및 이를 제조하는 방법 |
KR102456183B1 (ko) * | 2015-04-23 | 2022-10-18 | 엘지디스플레이 주식회사 | 유기발광표시장치 및 이를 제조하는 방법 |
WO2016185754A1 (ja) * | 2015-05-19 | 2016-11-24 | 株式会社Joled | 機能性素子、表示装置および撮像装置 |
US11043543B2 (en) | 2015-07-07 | 2021-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor and touch panel |
CN106339122B (zh) * | 2015-07-07 | 2021-07-13 | 株式会社半导体能源研究所 | 触摸传感器及触摸面板 |
CN106339122A (zh) * | 2015-07-07 | 2017-01-18 | 株式会社半导体能源研究所 | 触摸传感器及触摸面板 |
US10978489B2 (en) | 2015-07-24 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device |
US10804503B2 (en) | 2015-07-30 | 2020-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device, light-emitting device, module, and electronic device |
US11411208B2 (en) | 2015-07-30 | 2022-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device, light-emitting device, module, and electronic device |
JP2017228512A (ja) * | 2015-07-30 | 2017-12-28 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法、発光装置、モジュール、及び電子機器 |
JPWO2017094087A1 (ja) * | 2015-11-30 | 2018-09-13 | パイオニア株式会社 | 発光装置 |
US10429999B2 (en) | 2015-12-18 | 2019-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, data processing device, and method for manufacturing display panel |
WO2022175781A1 (ja) * | 2021-02-19 | 2022-08-25 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
WO2022180468A1 (ja) * | 2021-02-25 | 2022-09-01 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び、表示装置の作製方法 |
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KR102010429B1 (ko) | 2019-08-13 |
KR20190095551A (ko) | 2019-08-14 |
KR102109009B1 (ko) | 2020-05-11 |
JP2021073672A (ja) | 2021-05-13 |
JP2022081576A (ja) | 2022-05-31 |
TWI545819B (zh) | 2016-08-11 |
TW201244204A (en) | 2012-11-01 |
US20120217516A1 (en) | 2012-08-30 |
US9337244B2 (en) | 2016-05-10 |
JP2024023470A (ja) | 2024-02-21 |
JP6837510B2 (ja) | 2021-03-03 |
KR20140052969A (ko) | 2014-05-07 |
JP6050006B2 (ja) | 2016-12-21 |
JP2019133949A (ja) | 2019-08-08 |
JP2017037860A (ja) | 2017-02-16 |
WO2012115016A1 (en) | 2012-08-30 |
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