TWI559510B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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TWI559510B
TWI559510B TW103121524A TW103121524A TWI559510B TW I559510 B TWI559510 B TW I559510B TW 103121524 A TW103121524 A TW 103121524A TW 103121524 A TW103121524 A TW 103121524A TW I559510 B TWI559510 B TW I559510B
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Taiwan
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display device
light
layer
light shielding
thin film
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TW103121524A
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TW201601293A (zh
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周政旭
沈義和
張志雄
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群創光電股份有限公司
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Priority to TW103121524A priority Critical patent/TWI559510B/zh
Priority to US14/739,219 priority patent/US20150372068A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
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    • H01L29/78663—Amorphous silicon transistors
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]

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  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Description

顯示裝置
本發明係關於一種顯示裝置，尤指一種改善薄膜電晶體單元穩定性之顯示裝置。
隨著顯示器技術不斷進步，使用者對於電子產品之要求越來越高，所有的裝置均朝體積小、厚度薄、重量輕等趨勢發展，故目前市面上主流之顯示器裝置已由以往之陰極射線管發展成液晶顯示裝置(LCD)或有機發光二極體裝置(OLED)。
在LCD或OLED中，由於薄膜電晶體單元(TFT)之主動層材料之能隙一般與紫外光(UV)、藍光相近，因此，TFT對於紫外光、紫光及藍光十分敏感，在紫外光、紫光或藍光照射下(例如在製程中照射紫外光、紫光或藍光、或來自外在環境的紫外光、紫光或藍光)，TFT中會產生額外的電洞，造成TFT中的載子通道(channel)上包含額外的電洞，進而影響TFT電性偏移，例如閥值電壓(Vth)負偏、漏電流上升等；更使OLED在暗態操作時會有漏光現象、或移位暫存器(Shift Register,S/R)、資料多工器(Data Mux)及其他驅動電路無法正常運作等問題。
有鑑於此，目前亟需發展一種改善上述問題之 顯示裝置，提升顯示裝置的顯示品質並延長其使用壽命，期盼帶給消費者更穩定、更高品質的顯示效果。
本發明之主要目的係在提供一種顯示裝置，俾能減少顯示裝置中的薄膜電晶體單元受到紫外光、紫光或藍光影響，進而有效提升顯示裝置的穩定性及顯示品質。
為達成上述目的，本發明提供一種顯示裝置，包括：一基板；一薄膜電晶體單元，係設置於該基板上，且該薄膜電晶體單元包括：一閘極、一絕緣層、一半導體層、一源極及一汲極；以及一遮光單元，係設置於該基板與該薄膜電晶體單元之間，且該遮光單元包括：一遮光層及一第一緩衝層，該第一緩衝層係設置於該遮光層及該薄膜電晶體單元之間；其中，波長範圍介於200nm至510nm的光線通過該遮光層的穿透率介於0至15%之間。
據此，本發明利用該遮光層吸收短波長光線(例如在製程中照射紫外光、紫光或藍光、或來自外在環境的紫外光、紫光或藍光)，削弱短波長光線穿透該遮光層的強度，如此一來，可有效減少短波長光線接觸到薄膜電晶體單元的主動層通道，進而減少薄膜電晶體單元之電性偏移，並改善顯示裝置在暗態操作時的漏光現象、或移位暫存器、資料多工器及其他驅動電路無法正常運作等問題，因此，本發明之顯示裝置可提供更穩定、更高品質的顯示效果。
1‧‧‧基板
2‧‧‧遮光單元
21‧‧‧遮光層
211‧‧‧開口
22‧‧‧第一緩衝層
23‧‧‧第二緩衝層
3‧‧‧薄膜電晶體單元
35‧‧‧源極
36‧‧‧汲極
37‧‧‧第二保護層
4‧‧‧液晶單元
5‧‧‧彩色濾光片單元
6‧‧‧第二基板
7‧‧‧背光模組
31‧‧‧半導體層
32‧‧‧絕緣層
33‧‧‧閘極
34‧‧‧第一保護層
8‧‧‧有機發光二極體
81‧‧‧發光區
9‧‧‧封裝單元
圖1係本發明一較佳實施例之薄膜電晶體單元示意圖。
圖2係本發明另一較佳實施例之薄膜電晶體單元示意圖。
圖3係本發明再一較佳實施例之薄膜電晶體單元示意圖。
圖4係本發明一較佳實施例之顯示裝置示意圖。
圖5係本發明另一較佳實施例之顯示裝置示意圖。
圖6係本發明再一較佳實施例之顯示裝置示意圖。
圖7係本發明圖1結構之不同波長光線之反射率和穿透率結果圖。
圖8係本發明圖1結構於LCD之LED背光源未經過遮光層及經過遮光層後之光強度與波長的關係圖。
圖9係本發明圖1結構之負偏壓照光Stress(NBIS)試驗結果圖。
以下係藉由特定的具體實施例說明本發明之實施方式，熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之其他優點與功效。本發明亦可藉由其他不同的具體實施例加以施行或應用，本說明書中的各項細節亦可針對不同觀點與應用，在不悖離本創作之精神下進行各種修飾與變更。
[實施例1]
請參照圖1，本發明之顯示裝置包括：一基板 1；一薄膜電晶體單元3，係設置於該基板1上，且該薄膜電晶體單元3包括：一半導體層31、一絕緣層32、一閘極33、一第一保護層34、一源極35、一汲極36、及一第二保護層37；以及一遮光單元2，係設置於該基板1與該薄膜電晶體單元3之間，且該遮光單元2包括：一遮光層21、一第一緩衝層22、及選擇性地包含一第二緩衝層23，該第一緩衝層22係設置於該遮光層21及該薄膜電晶體單元3之間，該第二緩衝層23係設置於該遮光層21及該基板1之間。
於本實施例中，薄膜電晶體單元3可採用習知之薄膜電晶體製程製作，故在此不再贅述；圖1所示為一上閘極式(top gate)薄膜電晶體單元，而一下閘極式(bottom gate)薄膜電晶體單元亦可用於本發明，薄膜電晶體單元3的結構可由本技術領域之人簡單調整。例如，目前已知如圖2所示的蝕刻阻障層結構(etching stop layer structure,ESL)、或如圖3所示的背通道蝕刻結構(back channel etching structure,BCE)皆可應用於本發明。
此外，基板1可使用本技術領域常用之基板，如玻璃基板、塑膠基板、矽基板及陶瓷基板等。再者，閘極33、源極35及汲極36之材料可分別使用本技術領域常用之導電材料，如金屬、合金、金屬氧化物、金屬氮氧化物、或其他本技術領域常用之電極材料；且較佳為金屬材料，但本發明不僅限於此。至於絕緣層32之材料，則可採用本技術領域常用之閘極絕緣層材料，如氮化矽(SiNx)、氧化矽(SiOx)或其組合；而半導體層31，亦可採用本技術領域 常用之半導體層材料，例如氧化銦鎵鋅(IGZO)、氧化銦錫鋅ITZO、其他金屬氧化物半導體、非晶矽、多晶矽、結晶矽及其他有機半導體例如P13、DH4T、五苯環之有機材料等；另外，第一保護層34及第二保護層37之材料可為本技術領域常用之如氮化矽(SiNx)、氧化矽(SiOx)或其組合之鈍化層材料。然而，本發明並不僅限於此。
於本實施例中，波長510nm以下光線(尤其是介於200nm至510nm的紫外光、紫光及藍光)經過遮光層21後的穿透率為15%以下。因此，來自外在環境的光線中，波長範圍於200nm至510nm的光線(例如在製程中照射紫外光或藍光、或來自外在環境的紫外光或藍光)會被遮光層21阻擋大部分的強度，減少該些光線對薄膜電晶體單元3的影響。
在遮光單元2中，該遮光層21的性質並無特別限制；在365nm至510nm之光波長下，該遮光層21之折射率(n)較佳為介於4.5至6之間；在200nm至510nm之光波長下，該遮光層21之消光係數(k)較佳為介於0.5至6之間；及該遮光層21之厚度較佳為介於120nm至400nm之間。在滿足上述較佳範圍下，該遮光層21之材料可為非晶矽(amorphous Si)、多晶矽(Polysilicon)、結晶矽(Crystalline Si)、或其組合，但本發明並未受限於此。
在遮光單元2中，該第一緩衝層22及該第二緩衝層23並無特別限制；在200nm至510nm之光波長下，該該第一緩衝層22及該第二緩衝層23之折射率(n)較佳各 自介於1至2.3之間；在200nm至510nm之光波長下，該第一緩衝層22及該第二緩衝層23之消光係數(k)較佳介於0至2.7之間。在滿足上述較佳範圍下，該第一緩衝層22及該第二緩衝層23之材料可為氧化矽(SiOx)、氮化矽(SiNx)、氧化鈦(TiOx)、氮化鈦(Titanium nitride)、矽化鈦(Titanium Silicide)、氧化鋁(Aluminum Oxide)、矽化鎳(Nickel Silicide)、或其組合。
因此，遮光層21之折射率(n)較佳為大於緩衝層(第一緩衝層22及第二緩衝層23)之折射率(n)，利用遮光層21與緩衝層(第一緩衝層22及第二緩衝層23)之折射率(n)差異，使波長範圍落入上述範圍的側向光線(例如在製程中照射紫外光或藍光、或來自外在環境的紫外光或藍光)以波導模式(Guiding Mode)被侷限在遮光層21。
此外，當薄膜電晶體單元3為下閘極式薄膜電晶體單元時，雖然閘極33之金屬層可以擋住由基板1下方入射的正向光，但因閘極33之金屬層通常會進行圖案化，加上金屬具有高反射率，而使得側向入射的光線以反射、散射的方式照射到薄膜電晶體單元3，進而影響裝置性能；因此，當設置於該基板1與該薄膜電晶體單元3之間設置遮光單元2，可有效阻擋側向入射的光線。
圖1之圖式省略了顯示裝置中的其他元件，顯示裝置可舉例如一液晶顯示裝置(LCD)或一有機發光二極體裝置(OLED)。請參照圖4，其為液晶顯示裝置示意圖，除了上述之基板1、遮光單元2、及有機薄膜電晶體單元3以 外，更包含液晶單元4、彩色濾光片單元5、第二基板6、及背光模組7。再參照圖5，其為有機發光二極體裝置示意圖，除了上述之基板1、遮光單元2、及薄膜電晶體單元3以外，更包含有機發光二極體8和封裝單元9。此外，本技術領域中具有通常知識者可輕易了解其他省略的元件，習知常用的元件皆可應用於本發明。
[實施例2]
請參照圖6之顯示裝置，除了遮光層21外，其餘皆與圖2相同，相同部分不再重複贅述，實施例1內容皆可應用於此。於本實施例中，提供之顯示裝置為一下發光式有機發光二極體裝置(bottom emitting OLED)，設置於該薄膜電晶體單元3上之該有機發光二極體8包含一發光區81；於該遮光層21進行一圖案化程序，使遮光層21具有一開口211，其係對應至該發光區81。於此，開口211的尺寸、形狀不受限，可由本技術領域之人依實際條件或需求而簡單調整。因此，由於對應至發光區81的部分不存在遮光層21，當顯示裝置朝下發光時，光線並不會受到遮光層21阻擋而影響外在發光效率等性質。
針對圖1之遮光單元進行穿透率和反射率的測量，其中，基板1為玻璃基板，第一緩衝層22和第二緩衝層23各自為厚度200Å之氧化矽(SiOx)，遮光層21為厚度1200Å之非晶矽。在不同波長光線照射下，光線之反射率(R%)和穿透率(T%)如圖7所示。請參照圖7，可明顯觀察到波長為510nm以下的光線，因受到遮光層的阻擋，穿透率約在 10%以下，證實本發明之顯示裝置可有效阻隔短波長光線。
再者，使用發光二極體(LED)背光源進行照射，發光二極體(LED)背光源的照度為973 nits，而發出之光線通過圖1之遮光單元後，照度為234 nits，且參照圖8顯示之不同波長光線強度，明顯證實波長為510nm以下的光線可有效受到遮光層的阻擋。
接著，進行負偏壓照光Stress(Negative Bias Illumination Stress,NBIS)試驗，結果如圖9所示。在5160 nits照度下，當於閘極施加-30V偏壓後，未設置有遮光單元的組別明顯為閥值電壓(Vth)負偏嚴重；相較之下，證實本案裝置之閥值電壓(Vth)負偏情形不明顯，有效改善習知裝置之問題。
上述實施例僅係為了方便說明而舉例而已，本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。
1‧‧‧基板
2‧‧‧遮光單元
21‧‧‧遮光層
22‧‧‧第一緩衝層
23‧‧‧第二緩衝層
3‧‧‧薄膜電晶體單元
31‧‧‧半導體層
32‧‧‧絕緣層
33‧‧‧閘極
34‧‧‧第一保護層
35‧‧‧源極
36‧‧‧汲極
37‧‧‧第二保護層

Claims (14)

  1. 一種顯示裝置，包括：一基板；一薄膜電晶體單元，係設置於該基板上，且該薄膜電晶體單元包括：一閘極、一絕緣層、一半導體層、一源極及一汲極；以及一遮光單元，係設置於該基板與該薄膜電晶體單元之間，且該遮光單元包括：一遮光層及一第一緩衝層，該第一緩衝層係設置於該遮光層及該薄膜電晶體單元之間；其中，在365nm至510nm之光波長下，該遮光層之折射率(n)係介於4.5至6之間；在200nm至510nm之光波長下，該第一緩衝層之折射率(n)係介於1至2.3之間；以及波長範圍介於200nm至510nm的光線通過該遮光層的穿透率介於0至15%之間。
  2. 如申請專利範圍第1項所述之顯示裝置，其中，在200nm至510nm之光波長下，該遮光層之消光係數(k)係介於0.5至6之間。
  3. 如申請專利範圍第1項所述之顯示裝置，其中，該遮光層之厚度係介於120nm至400nm之間。
  4. 如申請專利範圍第1項所述之顯示裝置，更包括：一有機發光二極體，係設置於該薄膜電晶體單元上，且該有機發光二極體包含一發光區。
  5. 如申請專利範圍第4項所述之顯示裝置，其中，該遮光層具有一開口，其係對應至該發光區。
  6. 如申請專利範圍第1項所述之顯示裝置，其中，在200nm至510nm之光波長下，該第一緩衝層之消光係數(k)係介於0至2.7之間。
  7. 如申請專利範圍第1項所述之顯示裝置，其中，該遮光單元更包括：一第二緩衝層，且該遮光層係設置於該第一緩衝層及該第二緩衝層之間。
  8. 如申請專利範圍第1項所述之顯示裝置，其中，該遮光層之材料係為非晶矽(amorphous Si)、多晶矽(Polysilicon)、結晶矽(Crystalline Si)、或其組合。
  9. 如申請專利範圍第1項所述之顯示裝置，其中，該第一緩衝層之材料係為氧化矽、氮化矽、氮化鈦、矽化鈦、氧化鋁、矽化鎳、或其組合。
  10. 如申請專利範圍第1項所述之顯示裝置，其中，該薄膜電晶體單元係一上閘極式(top gate)薄膜電晶體單元或一下閘極式(bottom gate)薄膜電晶體單元。
  11. 如申請專利範圍第1項所述之顯示裝置，其中，該半導體層係氧化銦鎵鋅(IGZO)、氧化銦錫鋅(ITZO)、或其他金屬氧化物半導體。
  12. 如申請專利範圍第1項所述之顯示裝置，其中，該半導體層係非晶矽、多晶矽、或結晶矽。
  13. 如申請專利範圍第1項所述之顯示裝置，其中，該半導體層係P13、DH4T、或五苯環之有機半導體。
  14. 如申請專利範圍第1項所述之顯示裝置，其係為一有機發光二極體裝置(OLED)或一液晶顯示裝置(LCD)。
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