WO2018218548A1 - 显示面板及显示面板制作方法 - Google Patents

显示面板及显示面板制作方法 Download PDF

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Publication number
WO2018218548A1
WO2018218548A1 PCT/CN2017/086725 CN2017086725W WO2018218548A1 WO 2018218548 A1 WO2018218548 A1 WO 2018218548A1 CN 2017086725 W CN2017086725 W CN 2017086725W WO 2018218548 A1 WO2018218548 A1 WO 2018218548A1
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Prior art keywords
light
display panel
substrate
photoresist layer
layer
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PCT/CN2017/086725
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English (en)
French (fr)
Inventor
叶江波
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深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2017/086725 priority Critical patent/WO2018218548A1/zh
Priority to US16/489,555 priority patent/US20190393250A1/en
Priority to CN201780004623.8A priority patent/CN108513681B/zh
Publication of WO2018218548A1 publication Critical patent/WO2018218548A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display panel and a method of fabricating the same.
  • the middle panel of the display usually uses a semiconductor device such as a Thin Film Transistor (TFT) as a switching element for receiving pixel data from the pixel unit.
  • TFT Thin Film Transistor
  • TFT Thin Film Transistor
  • semiconductor materials are more susceptible to photoelectric effects when received light, and the semiconductor device in the conductive channel will have an effect on the switching characteristics of the thin film transistor when it produces a photoelectric effect. Therefore, the position of the conductive channel of the corresponding thin film transistor in the display panel is provided with a light shielding material, but the arrangement of the light shielding material will cause the light conducted in the display panel to be reflected multiple times, resulting in a decrease in the utilization of light.
  • the present invention provides a display panel having high light utilization efficiency.
  • a display panel includes a substrate and a plurality of arrays of thin film transistors disposed on the substrate.
  • a photoresist layer and a light shielding layer are disposed between each of the thin film transistors and the substrate, the photoresist layer and the light shielding layer correspond to a conductive channel of the thin film transistor, and the photoresist layer is adjacent to the light shielding layer a substrate for reflecting light transmitted from the substrate to prevent transmission of the light to the conductive channel, the photoresist layer for refracting light from the substrate and along the display panel The light direction is transmitted in one direction.
  • the light shielding layer is configured to reflect light transmitted from the substrate to prevent the light from being transmitted to the conductive channel, and the photoresist layer is configured to refract light from the substrate and along a light emitting direction of the display panel One-way transmission.
  • the photoresist layer causes the light of the thin film transistor adjacent to the substrate side to be unidirectionally transmitted along the light exiting direction, thereby effectively preventing the light shielding layer from being reflected.
  • the light again enters the substrate and is transmitted multiple times to cause loss, which improves the utilization of light.
  • FIG. 1 is a schematic side view showing the structure of a display mask according to an embodiment of the present invention.
  • Figure 2 is a light path diagram of light transmitted in two adjacent thin film transistor photoresist layers as shown in Figure 1.
  • FIG. 3 is a flow chart for fabricating the display panel shown in FIG. 1.
  • FIG. 4 is a flow chart for fabricating a photoresist layer as shown in FIG.
  • the display panel includes a substrate, a photoresist layer, a light shielding layer, and a thin film transistor which are sequentially stacked.
  • the light shielding layer is used for shielding light transmitted from the substrate to the conductive channel, the photoresist layer
  • the light from the substrate is unidirectionally transmitted along the light exiting direction of the display panel to prevent light transmitted to the light shielding layer from being reflected to the substrate. Further, the refractive index of the photoresist layer gradually decreases along the light emitting direction of the display panel.
  • the photoresist layer comprises a resin material of at least one single photosensitive group, a resin material of at least one photosensitive group, and a concentration of the resin material of the plurality of photosensitive groups gradually increases along a light emitting direction of the display panel Reduced.
  • the refractive index of the resin material of the plurality of photosensitive groups is greater than the refractive index of the resin material of the single photosensitive group.
  • FIG. 1 is a schematic side view of a display mask according to an embodiment of the invention.
  • the substrate 10 in the display panel 100 includes a first surface 101 and a second surface 102 that face each other.
  • the first surface 101 is used to receive light, that is, as a light incident surface of the display panel 100.
  • a light source (not shown) may be disposed on the side of the first surface 101 to emit light as the display panel 100.
  • the image display provides light.
  • the second surface 102 is configured to provide a display element (not shown) for image display in conjunction with the light received by the first surface 101.
  • the first direction F is defined as the light outgoing direction of the display panel 100.
  • the substrate 10 is a glass substrate.
  • the substrate 10 may be a substrate of another material, for example, a resin substrate.
  • a patterned photoresist layer 11 , a patterned light shielding layer 12 , a thin film transistor 13 , an insulating protective layer 14 , and a conductive electrode 15 are sequentially disposed on the first surface 101 .
  • the photoresist layer 11 is used to cause the light emitted from the second surface 102 to be unidirectionally transmitted along the first direction F.
  • the light shielding layer 12 is disposed on the surface of the photoresist layer 11 for shielding light from the photoresist layer 11.
  • the thin film transistor 13 is disposed on the light shielding layer 12 through a spaced insulating layer (not shown).
  • the thin film transistor 13 includes a source 131, a drain 132, a semiconductor layer 133, and a gate 134.
  • the source 131, the drain 132, and the semiconductor layer 133 are disposed in the same layer.
  • the source 131 and the drain 132 are disposed in the semiconductor.
  • the opposite sides of the layer 133, wherein the semiconductor layer 133 constitutes the conductive channel 136 of the thin film transistor 13.
  • the gate 134 is opposite to the conductive channel 136 through the gate insulating layer 135. In other words, the gate electrode 134 is away from the second surface 102 of the substrate 10 from the source 131, the drain 132, and the semiconductor layer 133, thereby forming a top gate structure. .
  • the conductive channel 136 is opposite to the photoresist layer 11 and the light shielding layer 12, that is, the conductive channel 136, the photoresist layer 11, and the light shielding layer 12 in the first direction F on the second surface of the substrate 10.
  • the projection of 102 coincides.
  • the light shielding layer 12 can effectively prevent the light received from the first surface 101 of the substrate 10 from directly illuminating the conductive channel 136 to prevent the conductive channel 136 from being subjected to a photoelectric effect when irradiated with light to affect the operational performance of the thin film transistor 13.
  • the insulating layer and the gate insulating layer 135 are made of silicon nitride (SiNx) or silicon oxide (SiOx), and the source 131, the drain 132, and the gate 134 are made of a metal conductive material, such as molybdenum (Mo). , copper (Cu), etc.
  • FIG. 2 is a light path diagram of light transmitted by the photoresist layer 11 in two adjacent thin film transistors 13 as shown in FIG. 1.
  • the refractive index of the photoresist layer 11 gradually decreases along the light-emitting direction of the display panel, whereby the photoresist layer 11 refraction is received when receiving the light transmitted by the first surface 102 to reduce
  • the light transmitted to the light shielding layer 12 in addition, when transmitted to the light shielding layer 12 to generate reflection, the photoresist layer further refracts the light reflected by the light shielding layer 12, and causes the refracted light to be transmitted unidirectionally from the first direction F.
  • the photoresist layer 11 enables the light to be unidirectionally transmitted in the first direction F corresponding to the light-transmitting region of the display panel 100 without multiple round-trip transmission in the substrate 10 and other layer structures, thereby effectively improving the utilization of light. rate.
  • the light-emitting direction is gradually decreased, that is, the concentration of the resin material of the plurality of photosensitive groups is gradually decreased along the first direction F, so that the refractive index of the photo-progenitor layer 11 along the light-emitting direction of the display panel 100 is gradually decreased.
  • the refractive index of the resin material of the plurality of photosensitive groups is greater than the refractive index of the resin material of the single photosensitive group.
  • the resin material of the plurality of photosensitive groups is capable of absorbing ultraviolet light and visible light having a wavelength smaller than a preset value, thereby further improving the purity of light for image display of the display panel 100.
  • the corresponding thin film transistor 13 can also be a bottom gate structure, that is, the gate 134 is directly opposite to the conductive channel 136 through a gate insulating layer 135, in other words, the source 131, the drain 132, and the semiconductor layer.
  • the lower surface 134 of the substrate 134 is away from the second surface 102 of the substrate 10 to form a bottom gate structure.
  • the semiconductor layer 133 is processed by a low temperature poly-silicon (low temperature LTPS) process.
  • low temperature LTPS low temperature poly-silicon
  • the photoresist layer 11 causes the light of the thin film transistor 13 adjacent to the substrate 10 to pass through in one direction along the light exit direction. The light is transmitted, thereby effectively preventing the light reflected by the light shielding layer 12 from entering the substrate 100 for multiple times to cause loss, thereby improving the utilization of light.
  • the display panel 100 can be used for a liquid crystal display device that needs to use a backlight, or can be applied to an Organic Light-Emitting Diode (OLED).
  • OLED Organic Light-Emitting Diode
  • the insulating protective layer 14 and the conductive electrode 15 are sequentially disposed on the surface of the thin film transistor 13.
  • the source 131 of the corresponding thin film transistor 13 on the insulating protective layer 14 is further provided with an opening (not labeled), so that the opening of the conductive electrode 15 is electrically connected to the source 131.
  • the insulating protective layer 14 is made of silicon nitride (SiNx) or silicon oxide (SiOx), and the conductive electrode 15 is made of indium tin oxide (ITO).
  • FIG. 3 is a flow chart for manufacturing the display panel 100 shown in FIG. As shown in FIG. 3, the manufacturing method of the display panel 100 includes the following steps:
  • Step 110 Providing a substrate 10, wherein the substrate comprises a first surface 101 and a second surface 102 facing each other, wherein the first surface 101 is for receiving light, that is, as a light incident surface of the display panel 100, corresponding to the first
  • a light source (not shown) may be disposed to provide light to the image display of the display panel 100. Light incident from the first surface 101 exits the second surface 102 outward.
  • Step 120 Form a patterned photoresist layer 11 on the substrate 101.
  • the step of fabricating the corresponding patterned photoresist layer 11 further includes:
  • Step 121 Corresponding to the second surface 102 of the substrate 101, a mixed solution of a resin material of at least one single photosensitive group and a resin material of at least one photosensitive group is applied.
  • Step 122 Curing the mixed solution to form a mixed solution film.
  • Step 123 forming the patterned photoresist layer 11 by patterning the mixed solution film by exposure, wherein an exposure intensity corresponding to the mixed easy film is gradually decreased along the adjacent substrate direction, thereby The concentration of the resin material of the plurality of photosensitive groups in the photoresist layer 11 gradually decreases.
  • the resin material of the plurality of photosensitive groups is capable of absorbing ultraviolet light and visible light having a wavelength smaller than a preset value.
  • step 130 forming a patterned light shielding layer 12 on the photoresist layer 11 , the photoresist layer 11 and the light shielding layer 12 having the same pattern.
  • Step 140 forming a plurality of thin film crystals arranged in a matrix on the patterned light shielding layer 12
  • the body tube 13 and the conductive channel of the thin film transistor 13 correspond to the photoresist layer 11 and the light shielding layer 12.
  • the thin film transistor 13 includes a source 131, a drain 132, a semiconductor layer 133, and a gate 134, wherein the source 131, the drain 132, and the semiconductor layer 133 are disposed in the same layer, wherein the source 131 and the drain 132
  • the semiconductor layers 133 are disposed on opposite sides of the semiconductor layer 133, and the semiconductor layer 133 constitutes the conductive channel 136 of the thin film transistor 13.
  • the conductive channel 136 is directed to the photoresist layer 11 and the light shielding layer 12, that is, the projection of the conductive channel 136, the photoresist layer 11 and the light shielding layer 12 in the first direction F on the second surface 102 of the substrate 10. coincide.
  • the light shielding layer 12 can effectively prevent the light received from the first surface 101 of the substrate 10 from directly illuminating the conductive channel 136 to prevent the conductive channel 136 from being subjected to a photoelectric effect when irradiated with light to affect the performance of the thin film transistor 13.
  • the light refractive index of the photoresist layer 11 gradually decreases along the light exiting direction of the display panel, whereby the photoresist layer 11 refractions when receiving the light transmitted by the first surface 102 to reduce the transmission to the light shielding layer 12.
  • the light reflected by the light shielding layer 12 is refracted, thereby preventing the light reflected by the light shielding layer 12 from being transmitted again into the substrate 10, whereby the photoresist layer 11 enables the light to display the light of the panel 100 in the first direction F.
  • the direction is transmitted in one direction without multiple round trips in the substrate 10 and other layer structures, thereby effectively improving the utilization of light.

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Abstract

一种显示面板（100），包括基底（10）与多个排列设置于基底（10）的薄膜晶体管（13）。每一个薄膜晶体管（13）与基底（10）之间设置光阻层（11）与遮光层（12），光阻层（11）与遮光层（12）对应于薄膜晶体管（13）的导电沟道（136），且光阻层（11）较遮光层（12）邻近基底（10），遮光层（12）用于反射自基底（10）传输的光线以防止光线传输至导电沟道（136），光阻层（11）用于将来自基底（10）的光线产生折射并沿显示面板（100）的出光方向单向传输。

Description

显示面板及显示面板制作方法
本专利文件披露的内容包含受版权保护的材料。该版权为版权所有人所有。版权所有人不反对任何人复制专利与商标局的官方记录和档案中所存在的该专利文件或该专利披露。
技术领域
本发明涉及显示技术领域，尤其涉及显示面板以及显示面板的制作方法。
背景技术
显示器中面板通常采用薄膜晶体管(Thin Film Transistor，TFT)等半导体器件来作为像素单元是否接收图像数据的开关元件。众所周知，薄膜晶体管需要通过半导体材料作为导电沟道，而显示面板中均有光线的传送。然而，半导体材料在接收到光照时较为容易产生光电效应，当导电沟道内的半导体材料产生光电效应时将会对薄膜晶体管的开关特性产生影响。因此，显示面板中对应薄膜晶体管导电沟道的位置会设置有遮光材料，但是，遮光材料的设置将会使得显示面板中传导的光线进行多次反射从而导致光线的利用率降低。
发明内容
为解决前述问题，本发明提供一种光线利用率较高的显示面板。
进一步，提供一种前述显示面板的制作方法。
一种显示面板，包括基底与多个阵列排布设置于所述基底的薄膜晶体管。每一个薄膜晶体管与基底之间设置光阻层与遮光层，所述光阻层与所述遮光层对应所述薄膜晶体管的导电沟道，且所述光阻层较所述遮光层邻近所述基底，所述遮光层用于反射自基底传输的光线以防止所述光线传输至所述导电沟道，所述光阻层用于将来自所述基底的光线产生折射并沿所述显示面板的出光方向单向传输。
一种显示面板的制作方法
提供一基底；
于所述基底表面形成图案化的光阻层；
于所述光阻层上形成图案化的遮光层，所述光阻层与所述遮光层的图案相同；以及
于所述图案化的遮光层上形成多个矩阵排布设置的薄膜晶体管，所述光阻层与所述遮光层对应所述薄膜晶体管的导电沟道；
所述遮光层用于反射自基底传输的光线以防止所述光线传输至所述导电沟道，所述光阻层用于将来自所述基底的光线产生折射并沿所述显示面板的出光方向单向传输。
相较于现有技术，由于薄膜晶体管在入光方向一侧设置有光阻层，光阻层使得薄膜晶体管邻近基底一侧的光线均沿着出光方向单向传输，从而有效防止被遮光层反射的光线再次进入基板多次传输而产生损失，提高了光线的利用率。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一实施例中显示面膜的侧面结构示意图。
图2为光线在如图1所示两个相邻薄膜晶体管光阻层中传输的光路图。
图3为制作如图1所示显示面板的流程图。
图4为制作如图1所示光阻层的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有付出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
显示面板包括依次层叠设置的基底、光阻层、遮光层以及薄膜晶体管。其中，所述遮光层用于遮蔽自基底传输的光线传输至所述导电沟道，所述光阻层 用于将来自所述基底的光线沿显示面板出光方向单向传输，防止传送至遮光层的光线反射至基底。进一步，所述光阻层光折射率沿着显示面板的出光方向逐渐减小。所述光阻层包括至少一种单个感光基团的树脂材料、至少一种多个感光基团的树脂材料，且所述多个感光基团的树脂材料的浓度沿所述显示面板出光方向逐渐减小。所述多个感光基团的树脂材料的折射率大于所述单个感光基团的树脂材料的折射率。
具体地，下面结合附图具体说明显示面板的层结构。
请参阅图1，其为本发明一实施例中显示面膜的侧面结构示意图。如图1所示，显示面板100中基底10包括正对的第一表面101与第二表面102。其中，第一表面101用于接收光线，也即是作为显示面板100的入光面，可以理解，对应第一表面101一侧，可以设置光源(图未示)以出射光线为显示面板100的图像显示提供光线。第二表面102用于设置显示元件(图未示)，以配合第一表面101接收的光线进行图像显示。为便于说明，定义第一方向F为显示面板100的出光方向。
本实施例中，所述基底10为玻璃基板，当然，可变更地，所述基底10也以为其他材质的基板，例如树脂材质的基板。
对应第一表面101上依次设置有图案化的光阻层11、图案化的遮光层12、薄膜晶体管13、绝缘保护层14以及导电电极15。
其中，光阻层11用于使得自第二表面102出射的光线沿着第一方向F单向传输。
遮光层12设置于光阻层11表面，用于遮挡来自光阻层11的光线。
薄膜晶体管13通过间隔的绝缘层(未标示)设置于遮光层12上。薄膜晶体管13包源极131、漏极132、半导体层133以及栅极134，其中，源极131、漏极132、半导体层133设置于同一层，其中，源极131与漏极132设置于半导体层133的相对两侧，其中，半导体层133构成薄膜晶体管13的导电沟道136。栅极134通过栅极绝缘层135正对导电沟道136上方，换句话说栅极134较源极131、漏极132、半导体层133远离基底10的第二表面102，从而构成顶栅型结构。
本实施例中，导电沟道136正对于所述光阻层11以及遮光层12，也即是导电沟道136、光阻层11以及遮光层12沿第一方向F在基底10的第二表面 102的投影重合。由此，遮光层12能够有效防止自基板10第一表面101接收的光线直接照射导电沟道136，以防止导电沟道136受到光线照射时产生光电效应而影响薄膜晶体管13的工作性能。
本实施例中，绝缘层与栅极绝缘层135采用氮化硅(SiNx)或者氧化硅(SiOx)构成，源极131、漏极132以及栅极134采用金属导电材料构成，例如钼(Mo)、铜(Cu)等。
具体地，请参阅图2，其为光线在如图1所示两个相邻薄膜晶体管13中光阻层11传输的光路图。如图2所示，光阻层11光折射率沿着显示面板的出光方向逐渐减小，由此，光阻层11在接收到第一表面102传输的光线时使其产生折射，以减小传输至遮光层12的光线，另外，当传输至遮光层12产生反射时，光阻层则进一步对遮光层12反射的光线进行折射，并使得折射的光线均自第一方向F单向传输，从而防止遮光层12反射的光线再次传输至基底10中。由此，光阻层11能够使得光线在第一方向F上对应显示面板100的透光区域单向传输，而不会在基板10以及其他层结构中多次往返传输，从而有效提高光线的利用率。
所述光阻层11中包括至少一种单个感光基团的树脂材料以及至少一种多个感光基团的树脂材料，且所述多个感光基团的树脂材料的浓度沿所述显示面板100出光方向逐渐减小，也即是多个感光基团的树脂材料的浓度沿着第一方向F逐渐减小，从而使得所述光祖层11沿着显示面板100出光方向的折射率逐渐减小。较佳地，所述多个感光基团的树脂材料的折射率大于所述单个感光基团的树脂材料的折射率。
较佳地，所述多个感光基团的树脂材料能够吸收紫外光以及波长小于预设值的可见光，从而进一步提高显示面板100图像显示用光线的纯净度。
可变更地，对应薄膜晶体管13还可以为底栅极结构，也即是栅极134通过一栅极绝缘层135正对导电沟道136下方，换句话说源极131、漏极132、半导体层133较栅极134远离基底10的第二表面102，从而构成底栅型结构。
较佳地，半导体层133采用低温多晶硅(Low Temperature Poly-silicon，low temperature LTPS)的工艺制程。
相较于现有技术，由于薄膜晶体管13在入光方向一侧设置有光阻层11，光阻层11使得薄膜晶体管13邻近基底10一侧的光线均沿着出光方向单向传 输，从而有效防止被遮光层12反射的光线再次进入基板100多次传输而产生损失，提高了光线的利用率。
可以理解，显示面板100可以用于需要采用背光源的液晶显示装置，也可以为应用于有机发光二极管显示器(Organic Light-Emitting Diode，OLED)中。
请再次参阅图1，绝缘保护层14与导电电极15依次设置于薄膜晶体管13表面。其中，绝缘保护层14上对应薄膜晶体管13的源极131还设置有开口(未标示)，从而使得导电电极15开口与源极131电性连接。
本实施例中，绝缘保护层14均采用氮化硅(SiNx)或者氧化硅(SiOx)构成，导电电极15采用氧化铟锡(ITO)材质。
请参阅图3，其为制作如图1所示显示面板100的流程图。如图3所示，显示面板100的制作方法包括步骤如下：
步骤110：提供基底10，其中，基底包括正对的第一表面101与第二表面102，其中，第一表面101用于接收光线，也即是作为显示面板100的入光面，对应第一表面101一侧，可以设置光源(图未示)以出射光线为显示面板100的图像显示提供光线。自第一表面101入射的光线在第二表面102向外出射。
步骤120：于所述基底101形成图案化的光阻层11。
具体地，如图4所示，其为对应光阻层11的制作步骤流程图，如图4所示，对应图案化的光阻层11的制作步骤还包括：
步骤121：对应基底101的第二表面102，涂布至少一种单个感光基团的树脂材料、至少一种多个感光基团的树脂材料的混合溶液。
步骤122：固化所述混合溶液，形成混合溶液薄膜。；
步骤123：通过曝光图案化所述混合溶液薄膜形成所述图案化的光阻层11，其中，沿着所述邻近所述基底方向对应所述混合容易薄膜的曝光强度逐渐减小，从而的所述多个感光基团的树脂材料在所述光阻层11中的浓度逐渐减小。
较佳地，所述多个感光基团的树脂材料能够吸收紫外光以及波长小于预设值的可见光。
请继续参阅图3，步骤130：与所述光阻层11上形成图案化的遮光层12，所述光阻层11与所述遮光层12的图案相同。
步骤140：于所述图案化的遮光层12上形成多个矩阵排布设置的薄膜晶 体管13，且所述薄膜晶体管13的导电沟道对应所述光阻层11以及遮光层12。具体地，薄膜晶体管13包源极131、漏极132、半导体层133以及栅极134，其中，源极131、漏极132、半导体层133设置于同一层，其中，源极131与漏极132设置于半导体层133的相对两侧，其中，半导体层133构成薄膜晶体管13的导电沟道136。其中，导电沟道136正对于所述光阻层11以及遮光层12，也即是导电沟道136、光阻层11以及遮光层12沿第一方向F在基底10的第二表面102的投影重合。
遮光层12能够有效防止自基板10第一表面101接收的光线直接照射导电沟道136，以防止导电沟道136受到光线照射时产生光电效应而影响薄膜晶体管13的工作性能。光阻层11光折射率沿着显示面板的出光方向逐渐减小，由此，光阻层11在接收到第一表面102传输的光线时使其产生折射，以减小传输至遮光层12的光线，同时，对遮光层12反射的光线进行折射，从而防止遮光层12反射的光线再次传输至基底10中，由此，光阻层11能够使得光线在第一方向F上显示面板100的出光方向单向传输，而不会在基板10以及其他层结构中多次往返传输，从而有效提高光线的利用率。
可以理解，以上所揭露的仅为本发明的较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (13)

  1. 一种显示面板，包括基底与多个阵列排布设置于所述基底的薄膜晶体管，其特征在于，每一个所述薄膜晶体管与所述基底之间设置光阻层与遮光层，所述光阻层与所述遮光层对应所述薄膜晶体管的导电沟道，且所述光阻层较所述遮光层邻近所述基底，所述遮光层用于反射来自所述基底侧的光线以防止所述光线传输至所述导电沟道，所述光阻层用于将来自所述基底的光线产生折射并沿所述显示面板的出光方向单向传输。
  2. 根据权利要求1所述的显示面板，其特征在于，所述光阻层的光折射率沿着显示面板的出光方向逐渐减小。
  3. 根据权利要求2所述的显示面板，其特征在于，所述光阻层包括至少一种单个感光基团的树脂材料以及至少一种多个感光基团的树脂材料，且所述多个感光基团的树脂材料的浓度沿所述显示面板出光方向逐渐减小。
  4. 根据权利要求3所述的显示面板，其特征在于，所述多个感光基团的树脂材料的折射率大于所述单个感光基团的树脂材料的折射率。
  5. 根据权利要求4所的显示面板，其特征在于，所述多个感光基团的树脂材料能够吸收紫外光以及波长小于预设值的可见光。
  6. 根据权利要求4所的显示面板，其特征在于，所述薄膜晶体管包括源极、漏极、栅极以及由设置于所述源极与漏极之间的半导体层构成的导电沟道。
  7. 根据权利要求6所述的显示面板，其特征在于，所述源极、所述漏极以及所述导电沟道较所述栅极邻近所述基底。
  8. 根据权利要求6所述的显示面板，其特征在于，所述栅极较所述源极、所述漏极以及所述导电沟道邻近所述基底。
  9. 一种显示面板的制作方法，其特征在于：
    提供一基底；
    于所述基底的表面形成图案化的光阻层；
    于所述光阻层上形成图案化的遮光层，所述光阻层与所述遮光层的图案相同；以及
    于所述图案化的遮光层上形成多个矩阵排布设置的薄膜晶体管，所述光阻层与所述遮光层对应所述薄膜晶体管的导电沟道；
    所述遮光层用于反射自基底传输的光线以防止所述光线传输至所述导电 沟道，所述光阻层用于将来自所述基底的光线产生折射并沿所述显示面板的出光方向单向传输。
  10. 根据权利要求9所述的显示面板的制作方法，其特征在于，所述形成图案化的光阻层步骤中还包括：
    涂布至少一种单个感光基团的树脂材料以及至少一种多个感光基团的树脂材料的混合溶液于所述基底的表面；
    固化所述混合溶液，形成混合溶液薄膜；
    通过曝光图案化所述混合溶液薄膜形成所述图案化的光阻层。
  11. 根据权利要求10所述的显示面板的制作方法，其特征在于，沿着所述邻近所述基底方向对应所述混合容易薄膜的曝光强度逐渐减小，以使得所述多个感光基团的树脂材料在所述光阻层中的浓度逐渐减小。
  12. 根据权利要求11所述的显示面案的制作方法，所述光阻层的光折射率沿着远离所述基底表面的方向逐渐减小。
  13. 根据权利要求11所述的显示面板的制作方法，其特征在于，所述多个感光基团的树脂材料的折射率大于所述单个感光基团的树脂材料的折射率。
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