JP2012177191A - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

Info

Publication number
JP2012177191A
JP2012177191A JP2012013169A JP2012013169A JP2012177191A JP 2012177191 A JP2012177191 A JP 2012177191A JP 2012013169 A JP2012013169 A JP 2012013169A JP 2012013169 A JP2012013169 A JP 2012013169A JP 2012177191 A JP2012177191 A JP 2012177191A
Authority
JP
Japan
Prior art keywords
target
shutter
film
sputtering
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012013169A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012177191A5 (enExample
Inventor
Masanori Matsumoto
誠謙 松本
Tsuguji Kuwabara
世治 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012013169A priority Critical patent/JP2012177191A/ja
Priority to US13/359,802 priority patent/US9127353B2/en
Priority to EP12000675.4A priority patent/EP2484800B1/en
Priority to CN201210023612.3A priority patent/CN102628160B/zh
Publication of JP2012177191A publication Critical patent/JP2012177191A/ja
Publication of JP2012177191A5 publication Critical patent/JP2012177191A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3428—Cathode assembly for sputtering apparatus, e.g. Target using liquid targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2012013169A 2011-02-03 2012-01-25 成膜装置及び成膜方法 Pending JP2012177191A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012013169A JP2012177191A (ja) 2011-02-03 2012-01-25 成膜装置及び成膜方法
US13/359,802 US9127353B2 (en) 2011-02-03 2012-01-27 Film-Forming apparatus and Film-Forming method
EP12000675.4A EP2484800B1 (en) 2011-02-03 2012-02-01 Film-forming apparatus and film-forming method
CN201210023612.3A CN102628160B (zh) 2011-02-03 2012-02-03 成膜装置和成膜方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011021465 2011-02-03
JP2011021465 2011-02-03
JP2012013169A JP2012177191A (ja) 2011-02-03 2012-01-25 成膜装置及び成膜方法

Publications (2)

Publication Number Publication Date
JP2012177191A true JP2012177191A (ja) 2012-09-13
JP2012177191A5 JP2012177191A5 (enExample) 2015-03-05

Family

ID=45654830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012013169A Pending JP2012177191A (ja) 2011-02-03 2012-01-25 成膜装置及び成膜方法

Country Status (4)

Country Link
US (1) US9127353B2 (enExample)
EP (1) EP2484800B1 (enExample)
JP (1) JP2012177191A (enExample)
CN (1) CN102628160B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013136576A1 (ja) * 2012-03-16 2013-09-19 島津エミット株式会社 成膜装置
JP2014220415A (ja) * 2013-05-09 2014-11-20 須賀　唯知 基板表面処理方法及び装置
WO2015037315A1 (ja) * 2013-09-10 2015-03-19 株式会社島津製作所 成膜装置および成膜方法
WO2016202299A1 (en) * 2015-06-17 2016-12-22 Master Dynamic Limited Apparatus, device and process for coating of articles
KR20220145272A (ko) * 2021-04-21 2022-10-28 도쿄엘렉트론가부시키가이샤 진공 처리 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD689534S1 (en) * 2010-08-30 2013-09-10 Ulvac, Inc. Film-forming apparatus
CN115323332A (zh) * 2022-02-22 2022-11-11 南京大学 一种适用于EUV光刻的Mo/Si多层膜反射镜制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537973A (en) * 1967-09-15 1970-11-03 Varian Associates Sequential sputtering with movable targets
JPS62263964A (ja) * 1986-05-09 1987-11-16 Ube Ind Ltd スパツタリングタ−ゲツト及びスパツタリング法
JPS63143261A (ja) * 1986-12-06 1988-06-15 Sumitomo Light Metal Ind Ltd スパツタリングによる多層膜の形成法
JPH02141570A (ja) * 1988-11-24 1990-05-30 Sumitomo Electric Ind Ltd スパッタリング装置
JPH0582444A (ja) * 1991-09-18 1993-04-02 Fujitsu Ltd 半導体製造装置
JPH0790569A (ja) * 1993-09-20 1995-04-04 Canon Inc スパッタリング装置
JPH11200042A (ja) * 1998-01-14 1999-07-27 Nikon Corp 成膜装置及び成膜方法
JP2009155706A (ja) * 2007-12-27 2009-07-16 Canon Anelva Corp シャッタ機構を有するスパッタ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489446A (en) 1987-02-16 1996-02-06 Canon Kabushiki Kaisha Device for forming silicon oxide film
ATE136159T1 (de) 1989-09-26 1996-04-15 Canon Kk Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung
JPH07331432A (ja) 1994-06-09 1995-12-19 Matsushita Electric Ind Co Ltd 誘電体薄膜の製造方法及びその製造装置
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
JP2003113467A (ja) 2001-10-05 2003-04-18 Matsushita Electric Ind Co Ltd 多元素薄膜の形成方法および装置
US8133364B2 (en) 2004-02-17 2012-03-13 Advanced Integration, Inc. Formation of photoconductive and photovoltaic films
JP4599473B2 (ja) 2008-09-30 2010-12-15 キヤノンアネルバ株式会社 スパッタリング装置および薄膜形成方法
JP2010106290A (ja) 2008-10-28 2010-05-13 Showa Denko Kk 成膜装置および成膜方法、磁気記録媒体、磁気記録再生装置
JP4537479B2 (ja) 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3537973A (en) * 1967-09-15 1970-11-03 Varian Associates Sequential sputtering with movable targets
JPS62263964A (ja) * 1986-05-09 1987-11-16 Ube Ind Ltd スパツタリングタ−ゲツト及びスパツタリング法
JPS63143261A (ja) * 1986-12-06 1988-06-15 Sumitomo Light Metal Ind Ltd スパツタリングによる多層膜の形成法
JPH02141570A (ja) * 1988-11-24 1990-05-30 Sumitomo Electric Ind Ltd スパッタリング装置
JPH0582444A (ja) * 1991-09-18 1993-04-02 Fujitsu Ltd 半導体製造装置
JPH0790569A (ja) * 1993-09-20 1995-04-04 Canon Inc スパッタリング装置
JPH11200042A (ja) * 1998-01-14 1999-07-27 Nikon Corp 成膜装置及び成膜方法
JP2009155706A (ja) * 2007-12-27 2009-07-16 Canon Anelva Corp シャッタ機構を有するスパッタ装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013136576A1 (ja) * 2012-03-16 2013-09-19 島津エミット株式会社 成膜装置
JPWO2013136576A1 (ja) * 2012-03-16 2015-08-03 株式会社島津製作所 成膜装置
JP2014220415A (ja) * 2013-05-09 2014-11-20 須賀　唯知 基板表面処理方法及び装置
WO2015037315A1 (ja) * 2013-09-10 2015-03-19 株式会社島津製作所 成膜装置および成膜方法
JPWO2015037315A1 (ja) * 2013-09-10 2017-03-02 株式会社島津製作所 成膜装置および成膜方法
WO2016202299A1 (en) * 2015-06-17 2016-12-22 Master Dynamic Limited Apparatus, device and process for coating of articles
US11247227B2 (en) 2015-06-17 2022-02-15 Master Dynamic Limited Apparatus, device and process for coating of articles
KR20220145272A (ko) * 2021-04-21 2022-10-28 도쿄엘렉트론가부시키가이샤 진공 처리 장치
KR102783192B1 (ko) * 2021-04-21 2025-03-19 도쿄엘렉트론가부시키가이샤 진공 처리 장치

Also Published As

Publication number Publication date
CN102628160B (zh) 2015-04-08
EP2484800B1 (en) 2014-04-30
EP2484800A1 (en) 2012-08-08
CN102628160A (zh) 2012-08-08
US20120199471A1 (en) 2012-08-09
US9127353B2 (en) 2015-09-08

Similar Documents

Publication Publication Date Title
JP2012177191A (ja) 成膜装置及び成膜方法
KR101355303B1 (ko) 전자 디바이스의 제조 방법 및 스퍼터링 방법
CN101100741B (zh) 改进的pvd靶
JP6131145B2 (ja) 成膜装置
US11948784B2 (en) Tilted PVD source with rotating pedestal
JP2007224419A (ja) 冷却したターゲットを用いたスパッタリング
TW201104005A (en) Reactive sputtering with multiple sputter sources
JP2010111884A (ja) スパッタリングカソード及びスパッタリング成膜装置
JPWO2008133139A1 (ja) ダミー基板及びそれを用いた成膜装置の始動方法、成膜条件の維持・変更方法並びに停止方法
JP6588351B2 (ja) 成膜方法
JP2002220660A (ja) スパッタリング装置
JP2012201971A (ja) 成膜装置
JP2023071282A (ja) 真空処理装置及び真空処理方法
US12417903B2 (en) Physical vapor deposition source and chamber assembly
TWI343419B (en) Target backing plate for sputtering system
JP2010106330A (ja) スパッタリングターゲットの製造方法、スパッタリングターゲット、スパッタリング装置
JP2020122178A (ja) ターゲットおよび成膜装置並びに成膜対象物の製造方法
JP3787430B2 (ja) スパッタリング装置及びそれを用いた薄膜形成法
JP4672121B2 (ja) スパッタリングターゲットとそれを用いたスパッタリング装置、並びに薄膜の製造方法
JP2013079420A (ja) スパッタ装置
CN113337797B (zh) 阴极组件和成膜装置
JP2605341B2 (ja) スパッタリング方法
EP4665882A1 (en) Physical vapor deposition source and chamber assembly
JP2014181376A (ja) スパッタリング装置及びスパッタリング方法
JP6310678B2 (ja) スパッタリング方法

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20130228

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150120

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150915

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151111

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20160405