CN102628160B - 成膜装置和成膜方法 - Google Patents
成膜装置和成膜方法 Download PDFInfo
- Publication number
- CN102628160B CN102628160B CN201210023612.3A CN201210023612A CN102628160B CN 102628160 B CN102628160 B CN 102628160B CN 201210023612 A CN201210023612 A CN 201210023612A CN 102628160 B CN102628160 B CN 102628160B
- Authority
- CN
- China
- Prior art keywords
- target
- baffle plate
- film
- film forming
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 134
- 230000007246 mechanism Effects 0.000 claims abstract description 56
- 238000004544 sputter deposition Methods 0.000 claims abstract description 52
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000013077 target material Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 230000008859 change Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 79
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 107
- 238000010586 diagram Methods 0.000 description 15
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 238000009434 installation Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000011120 plywood Substances 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3428—Cathode assembly for sputtering apparatus, e.g. Target using liquid targets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-021465 | 2011-02-03 | ||
| JP2011021465 | 2011-02-03 | ||
| JP2012-013169 | 2012-01-25 | ||
| JP2012013169A JP2012177191A (ja) | 2011-02-03 | 2012-01-25 | 成膜装置及び成膜方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102628160A CN102628160A (zh) | 2012-08-08 |
| CN102628160B true CN102628160B (zh) | 2015-04-08 |
Family
ID=45654830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210023612.3A Expired - Fee Related CN102628160B (zh) | 2011-02-03 | 2012-02-03 | 成膜装置和成膜方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9127353B2 (enExample) |
| EP (1) | EP2484800B1 (enExample) |
| JP (1) | JP2012177191A (enExample) |
| CN (1) | CN102628160B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD689534S1 (en) * | 2010-08-30 | 2013-09-10 | Ulvac, Inc. | Film-forming apparatus |
| JP5871055B2 (ja) * | 2012-03-16 | 2016-03-01 | 株式会社島津製作所 | 成膜装置 |
| JP6164770B2 (ja) * | 2013-05-09 | 2017-07-19 | 須賀 唯知 | 基板表面処理方法及び装置 |
| JP6202098B2 (ja) * | 2013-09-10 | 2017-09-27 | 株式会社島津製作所 | 成膜装置および成膜方法 |
| HK1215127A2 (zh) * | 2015-06-17 | 2016-08-12 | Master Dynamic Limited | 制品涂层的设备、仪器和工艺 |
| JP7572127B2 (ja) * | 2021-04-21 | 2024-10-23 | 東京エレクトロン株式会社 | 真空処理装置 |
| CN115323332A (zh) * | 2022-02-22 | 2022-11-11 | 南京大学 | 一种适用于EUV光刻的Mo/Si多层膜反射镜制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101778961A (zh) * | 2008-09-30 | 2010-07-14 | 佳能安内华股份公司 | 溅射设备和薄膜形成方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3537973A (en) * | 1967-09-15 | 1970-11-03 | Varian Associates | Sequential sputtering with movable targets |
| JPS62263964A (ja) * | 1986-05-09 | 1987-11-16 | Ube Ind Ltd | スパツタリングタ−ゲツト及びスパツタリング法 |
| JPS63143261A (ja) * | 1986-12-06 | 1988-06-15 | Sumitomo Light Metal Ind Ltd | スパツタリングによる多層膜の形成法 |
| US5489446A (en) | 1987-02-16 | 1996-02-06 | Canon Kabushiki Kaisha | Device for forming silicon oxide film |
| JPH02141570A (ja) * | 1988-11-24 | 1990-05-30 | Sumitomo Electric Ind Ltd | スパッタリング装置 |
| ATE136159T1 (de) | 1989-09-26 | 1996-04-15 | Canon Kk | Verfahren zum herstellen einer abgeschiedenen schicht, und verfahren zum herstellen einer halbleitervorrichtung |
| JPH0582444A (ja) * | 1991-09-18 | 1993-04-02 | Fujitsu Ltd | 半導体製造装置 |
| JPH0790569A (ja) * | 1993-09-20 | 1995-04-04 | Canon Inc | スパッタリング装置 |
| JPH07331432A (ja) | 1994-06-09 | 1995-12-19 | Matsushita Electric Ind Co Ltd | 誘電体薄膜の製造方法及びその製造装置 |
| JPH11200042A (ja) * | 1998-01-14 | 1999-07-27 | Nikon Corp | 成膜装置及び成膜方法 |
| US6051113A (en) * | 1998-04-27 | 2000-04-18 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing |
| JP2003113467A (ja) | 2001-10-05 | 2003-04-18 | Matsushita Electric Ind Co Ltd | 多元素薄膜の形成方法および装置 |
| US8133364B2 (en) | 2004-02-17 | 2012-03-13 | Advanced Integration, Inc. | Formation of photoconductive and photovoltaic films |
| JP4562764B2 (ja) * | 2007-12-27 | 2010-10-13 | キヤノンアネルバ株式会社 | スパッタ装置 |
| JP2010106290A (ja) | 2008-10-28 | 2010-05-13 | Showa Denko Kk | 成膜装置および成膜方法、磁気記録媒体、磁気記録再生装置 |
| JP4537479B2 (ja) | 2008-11-28 | 2010-09-01 | キヤノンアネルバ株式会社 | スパッタリング装置 |
-
2012
- 2012-01-25 JP JP2012013169A patent/JP2012177191A/ja active Pending
- 2012-01-27 US US13/359,802 patent/US9127353B2/en not_active Expired - Fee Related
- 2012-02-01 EP EP12000675.4A patent/EP2484800B1/en not_active Not-in-force
- 2012-02-03 CN CN201210023612.3A patent/CN102628160B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101778961A (zh) * | 2008-09-30 | 2010-07-14 | 佳能安内华股份公司 | 溅射设备和薄膜形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2484800B1 (en) | 2014-04-30 |
| EP2484800A1 (en) | 2012-08-08 |
| CN102628160A (zh) | 2012-08-08 |
| US20120199471A1 (en) | 2012-08-09 |
| US9127353B2 (en) | 2015-09-08 |
| JP2012177191A (ja) | 2012-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 Termination date: 20220203 |