JP2012160510A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 157
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 96
- 238000002955 isolation Methods 0.000 claims description 178
- 239000012535 impurity Substances 0.000 claims description 151
- 210000000746 body region Anatomy 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 93
- 238000000034 method Methods 0.000 claims description 46
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 43
- 229910021332 silicide Inorganic materials 0.000 description 28
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 28
- 230000015556 catabolic process Effects 0.000 description 22
- 239000002344 surface layer Substances 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 14
- 238000002513 implantation Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】LDMOSトランジスタ形成領域のゲート電極18aと素子分離膜11bの重なり幅をA1、ゲート電極18aとドレイン領域23bとの間隔をB1とし、ESD保護素子形成領域のゲート電極18と素子分離膜11cとの重なり幅をA2、ゲート電極18bとアノード領域22cとの間隔をB2としたときに、A1≧A2、且つB1<B2の関係を満足するように、ゲート電極18a、素子分離膜11b、ドレイン領域20a、ゲート電極18b、素子分離膜11c及び前記アノード領域22cを形成する
【選択図】図3
Description
図1は第1の実施形態に係る半導体装置の断面図、図2は同じくその平面図である。なお、以下の説明では第1導電型をp型とし第2導電型をn型としているが、第1導電型をn型とし第2導電型をp型としてもよい。
図14,図15は、第2の実施形態に係る半導体装置の製造方法を工程順に表した断面図である。また、図16は、第2の実施形態に係る半導体装置の上面図である。
図17,図18は、第3の実施形態に係る半導体装置の製造方法を工程順に表した断面図である。また、図19は、第3の実施形態に係る半導体装置の上面図である。
図20は第4の実施形態に係る半導体装置の断面図、図21は同じくその上面図である。これらの図20,図21において、図1,図2と同一物には同一符号を付して、その詳細な説明は省略する。なお、図20,図21では、シリサイド膜及び層間絶縁膜等の図示を省略している。
Claims (10)
- LDMOS(Laterally Diffused MOS)トランジスタと、
ESD(Electrostatic Discharge)保護素子と、
前記LDMOSトランジスタにおいて、半導体基板上に絶縁膜を介して形成された第1のゲート電極と、
前記半導体基板に第1導電型不純物を導入して形成され、前記第1のゲート電極の一方の縁部側に配置された第1のボディ領域と、
前記第1のボディ領域の上部に配置された第2導電型の第1のソース領域と、
前記半導体基板の上部に形成され、前記第1のゲート電極に重なるように配置された第1の素子分離膜と、
前記半導体基板内に形成され、第2導電型不純物を含み、前記第1の素子分離膜の縁部に接し且つ前記第1のゲート電極から離れた位置に配置された第1のドレイン領域と、
前記半導体基板内に形成され、第2導電型不純物を含み、前記第1のボディ領域及び前記第1のドレイン領域に接する第1のドリフト領域とを有し、
前記ESD保護素子は、前記半導体基板上に絶縁膜を介して形成された第2のゲート電極と、
前記半導体基板内に形成され、第1導電型不純物を含み、前記第2のゲート電極の一方の縁部側に配置された第2のボディ領域と、
前記第2のボディ領域の上部に配置された第2導電型の第2のソース領域と、
前記半導体基板の上部に形成され、前記第2のゲート電極に重なるように配置された第2の素子分離膜と、
前記半導体基板内に形成され、第1導電型不純物を含み、前記第2の素子分離膜の縁部に接し且つ前記第2のゲート電極から離れた位置に配置されたアノード領域と、
前記半導体基板の上部に形成され、前記アノード領域に隣接して配置された第3の素子分離膜と、
前記半導体基板内に形成され、第2導電型不純物を含み、前記第3の素子分離膜に接触する第2のドレイン領域と、
前記半導体基板内に形成され、第2導電型不純物を含み、前記第2のボディ領域、前記アノード領域及び前記第2のドレイン領域に接する第2のドリフト領域とを有し、
前記第1のゲート電極と前記第1の素子分離膜との重なり幅をA1、前記第2のゲート電極と前記第2の素子分離膜との重なり幅をA2、前記第1のゲート電極と前記第1のドレイン領域との間隔をB1、前記第2のゲート電極と前記アノード領域との間隔をB2としたときに、A1≧A2、且つB1<B2の関係を有することを特徴とする半導体装置。 - 前記第1の素子分離膜、前記第2の素子分離膜及び前記第3の素子分離膜は、STI(Shallow Trench Isolation)法により形成された酸化膜であることを特徴とする請求項1に記載の半導体装置。
- 前記第1のボディ領域は前記第1のドリフト領域に囲まれ、前記第2のボディ領域は前記第2のドリフト領域に囲まれていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1のボディ領域及び前記第1のドリフト領域は上下方向に重ならず、前記第2のボディ領域及び前記第2のドリフト領域は上下方向に重ならないことを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1のドリフト領域は前記第1のボディ領域に囲まれ、前記第2のドリフト領域は前記第2のボディ領域に囲まれていることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1のゲート電極及び前記第2のゲート電極が、リング状に形成されていることを特徴とする請求項1又は2に記載の半導体装置。
- 第1導電型半導体基板にLDMOS(Laterally Diffused MOS)トランジスタ形成領域及びESD(Electrostatic Discharge)保護素子形成領域を確定し、前記LDMOSトランジスタ形成領域内に第1の素子分離膜を形成するとともに、前記ESD保護素子形成領域内に第2の素子分離膜及び第3の素子分離膜を相互に離隔して形成する工程と、
前記LDMOSトランジスタ形成領域の前記半導体基板に第2導電型不純物を導入して第1のドリフト領域を形成するとともに、前記ESD保護素子形成領域の前記半導体基板に第2導電型不純物を導入して第2のドリフト領域を形成する工程と、
前記LDMOSトランジスタ形成領域の前記半導体基板に第1導電型不純物を導入して前記第1の素子分離膜から離隔した位置に第1のボディ領域を形成するとともに、前記ESD保護素子形成領域の前記半導体基板に第1導電型不純物を導入して前記第2の素子分離膜及び前記第3の素子分離膜から離隔した位置に第2のボディ領域を形成する工程と、
前記LDMOSトランジスタ形成領域の前記半導体基板の上に第1のゲート絶縁膜を形成するとともに、前記ESD保護素子形成領域の前記半導体基板上に第2のゲート絶縁膜を形成する工程と、
前記第1のゲート絶縁膜の上であって前記第1のボディ領域及び前記第1の素子分離膜に重なる位置に第1のゲート電極を形成するとともに、前記第2のゲート絶縁膜の上であって前記第2のボディ領域及び前記第2の素子分離膜に重なる位置に第2のゲート電極を形成する工程と、
前記LDMOSトランジスタ形成領域の前記第1のボディ領域の上部及び前記第1の素子分離膜と前記LDMOSトランジスタ形成領域の縁部との間にそれぞれ第2導電型不純物を導入して第1のソース領域及び第1のドレイン領域を形成するとともに、前記SED保護素子形成領域の前記第2のボディ領域の上部及び前記第3の素子分離膜と前記SED保護素子形成領域の縁部との間にそれぞれ第2導電型不純物を導入して第2のソース領域及び第2のドレイン領域を形成する工程と、
前記ESD保護素子形成領域の前記第2の素子分離膜と前記第3の素子分離膜との間に第1導電型不純物を導入してアノード領域を形成する工程とを有し、
前記第1のゲート電極と前記第1の素子分離膜との重なり幅をA1、前記第2のゲート電極と前記第2の素子分離膜との重なり幅をA2、前記第1のゲート電極と前記第1のドレイン領域との間隔をB1、前記第2のゲート電極と前記アノード領域との間隔をB2としたときに、A1≧A2、且つB1<B2の関係を満足するように、前記第1のゲート電極、前記第1の素子分離膜、前記第1のドレイン領域、前記第2のゲート電極、前記第2の素子分離膜及び前記アノード領域を形成することを特徴とする半導体装置の製造方法。 - 前記第1のボディ領域は前記第1のドリフト領域の上部に不純物を導入して形成し、前記第2のボディ領域は前記第2のドリフト領域の上部に不純物を導入して形成することを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記第1のボディ領域は前記第1のドリフト領域の隣りに形成し、前記第2のボディ領域は前記第2のドリフト領域の隣りに形成することを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記第1のドリフト領域及び前記第2のドリフト領域は、前記第1のボディ領域及び前記第2のボディ領域を形成した後に前記第1のボディ領域及び前記第2のボディ領域の上部に不純物を導入して形成することを特徴とする請求項7に記載の半導体装置の製造方法。
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