JP2012009586A - 配線基板、半導体装置及び配線基板の製造方法 - Google Patents

配線基板、半導体装置及び配線基板の製造方法 Download PDF

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Publication number
JP2012009586A
JP2012009586A JP2010143514A JP2010143514A JP2012009586A JP 2012009586 A JP2012009586 A JP 2012009586A JP 2010143514 A JP2010143514 A JP 2010143514A JP 2010143514 A JP2010143514 A JP 2010143514A JP 2012009586 A JP2012009586 A JP 2012009586A
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JP
Japan
Prior art keywords
insulating layer
wiring board
pad
wiring
solder resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010143514A
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English (en)
Japanese (ja)
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JP2012009586A5 (enExample
Inventor
Shigeji Muramatsu
茂次 村松
Satoshi Haruhara
聡 春原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2010143514A priority Critical patent/JP2012009586A/ja
Priority to US13/166,083 priority patent/US8508050B2/en
Publication of JP2012009586A publication Critical patent/JP2012009586A/ja
Publication of JP2012009586A5 publication Critical patent/JP2012009586A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10152—Auxiliary members for bump connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/10175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP2010143514A 2010-06-24 2010-06-24 配線基板、半導体装置及び配線基板の製造方法 Pending JP2012009586A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010143514A JP2012009586A (ja) 2010-06-24 2010-06-24 配線基板、半導体装置及び配線基板の製造方法
US13/166,083 US8508050B2 (en) 2010-06-24 2011-06-22 Wiring substrate, semiconductor device, and method for manufacturing wiring substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010143514A JP2012009586A (ja) 2010-06-24 2010-06-24 配線基板、半導体装置及び配線基板の製造方法

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Publication Number Publication Date
JP2012009586A true JP2012009586A (ja) 2012-01-12
JP2012009586A5 JP2012009586A5 (enExample) 2013-04-18

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013239604A (ja) * 2012-05-16 2013-11-28 Ngk Spark Plug Co Ltd 配線基板
JP2014029972A (ja) * 2012-06-29 2014-02-13 Kyocer Slc Technologies Corp 配線基板
JP2015012162A (ja) * 2013-06-28 2015-01-19 株式会社デンソー モールドパッケージおよびその製造方法
CN104602459A (zh) * 2013-10-30 2015-05-06 京瓷电路科技株式会社 布线基板及其制造方法
KR101523479B1 (ko) * 2012-08-09 2015-05-27 니혼도꾸슈도교 가부시키가이샤 배선기판
US9185806B2 (en) 2012-09-28 2015-11-10 Ibiden Co., Ltd. Method for manufacturing printed wiring board and printed wiring board
JP2022021766A (ja) * 2020-07-22 2022-02-03 キオクシア株式会社 半導体装置
JP2023067260A (ja) * 2021-10-29 2023-05-16 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法

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US9406579B2 (en) * 2012-05-14 2016-08-02 STATS ChipPAC Pte. Ltd. Semiconductor device and method of controlling warpage in semiconductor package
KR20140019173A (ko) * 2012-08-06 2014-02-14 삼성전기주식회사 솔더 코팅볼을 이용한 패키징 방법 및 이에 따라 제조된 패키지
JP5475077B2 (ja) * 2012-09-07 2014-04-16 日本特殊陶業株式会社 配線基板およびその製造方法
US20140124254A1 (en) * 2012-11-05 2014-05-08 Nvidia Corporation Non-solder mask defined copper pad and embedded copper pad to reduce packaging system height
US20140183744A1 (en) * 2012-12-28 2014-07-03 Texas Instruments Incorporated Package substrate with bondable traces having different lead finishes
JP6352644B2 (ja) * 2014-02-12 2018-07-04 新光電気工業株式会社 配線基板及び半導体パッケージの製造方法
JP2015195272A (ja) * 2014-03-31 2015-11-05 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
JP2015231003A (ja) * 2014-06-06 2015-12-21 イビデン株式会社 回路基板および回路基板の製造方法
JP2016058673A (ja) * 2014-09-12 2016-04-21 イビデン株式会社 プリント配線板およびその製造方法
JP2017050315A (ja) * 2015-08-31 2017-03-09 イビデン株式会社 プリント配線板及びプリント配線板の製造方法
JP2017050313A (ja) * 2015-08-31 2017-03-09 イビデン株式会社 プリント配線板及びプリント配線板の製造方法
US20180226271A1 (en) 2017-01-31 2018-08-09 Skyworks Solutions, Inc. Control of under-fill using a film during fabrication for a dual-sided ball grid array package
US20180350630A1 (en) * 2017-06-01 2018-12-06 Qualcomm Incorporated Symmetric embedded trace substrate
US11545425B2 (en) * 2020-10-08 2023-01-03 Qualcomm Incorporated Substrate comprising interconnects embedded in a solder resist layer
US11823983B2 (en) * 2021-03-23 2023-11-21 Qualcomm Incorporated Package with a substrate comprising pad-on-pad interconnects
US11621220B2 (en) * 2021-03-25 2023-04-04 Advanced Semiconductor Engineering, Inc. Assembly structure and method for manufacturing the same
US20240332192A1 (en) * 2023-03-30 2024-10-03 Advanced Semiconductor Engineering, Inc. Package structure

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JP2007035692A (ja) * 2005-07-22 2007-02-08 Matsushita Electric Ind Co Ltd 電子部品実装構造および電子部品実装方法
JP2009289914A (ja) * 2008-05-28 2009-12-10 Shinko Electric Ind Co Ltd 配線基板
JP2010010494A (ja) * 2008-06-27 2010-01-14 Kyocer Slc Technologies Corp 配線基板およびその製造方法
JP2010040936A (ja) * 2008-08-07 2010-02-18 Kyocer Slc Technologies Corp 配線基板およびその製造方法

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JP3997903B2 (ja) 2002-11-29 2007-10-24 富士通株式会社 回路基板および半導体装置
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JP4769022B2 (ja) 2005-06-07 2011-09-07 京セラＳｌｃテクノロジー株式会社 配線基板およびその製造方法
JP5091469B2 (ja) 2006-12-05 2012-12-05 京セラＳｌｃテクノロジー株式会社 配線基板およびその製造方法
JP4800253B2 (ja) * 2007-04-04 2011-10-26 新光電気工業株式会社 配線基板の製造方法
JP5138277B2 (ja) 2007-05-31 2013-02-06 京セラＳｌｃテクノロジー株式会社 配線基板およびその製造方法
JP5203045B2 (ja) * 2008-05-28 2013-06-05 日本特殊陶業株式会社 多層配線基板の中間製品、多層配線基板の製造方法
JP5079646B2 (ja) * 2008-08-26 2012-11-21 新光電気工業株式会社 半導体パッケージ及びその製造方法と半導体装置
JP5313626B2 (ja) * 2008-10-27 2013-10-09 新光電気工業株式会社 電子部品内蔵基板及びその製造方法

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JP2007035692A (ja) * 2005-07-22 2007-02-08 Matsushita Electric Ind Co Ltd 電子部品実装構造および電子部品実装方法
JP2009289914A (ja) * 2008-05-28 2009-12-10 Shinko Electric Ind Co Ltd 配線基板
JP2010010494A (ja) * 2008-06-27 2010-01-14 Kyocer Slc Technologies Corp 配線基板およびその製造方法
JP2010040936A (ja) * 2008-08-07 2010-02-18 Kyocer Slc Technologies Corp 配線基板およびその製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101523478B1 (ko) * 2012-05-16 2015-05-27 니혼도꾸슈도교 가부시키가이샤 배선기판
JP2013239604A (ja) * 2012-05-16 2013-11-28 Ngk Spark Plug Co Ltd 配線基板
US9179552B2 (en) 2012-05-16 2015-11-03 Nrk Spark Plug Co., Ltd. Wiring board
JP2014029972A (ja) * 2012-06-29 2014-02-13 Kyocer Slc Technologies Corp 配線基板
US9699905B2 (en) 2012-08-09 2017-07-04 Ngk Spark Plug Co., Ltd. Wiring board
KR101523479B1 (ko) * 2012-08-09 2015-05-27 니혼도꾸슈도교 가부시키가이샤 배선기판
US9185806B2 (en) 2012-09-28 2015-11-10 Ibiden Co., Ltd. Method for manufacturing printed wiring board and printed wiring board
JP2015012162A (ja) * 2013-06-28 2015-01-19 株式会社デンソー モールドパッケージおよびその製造方法
JP2015088583A (ja) * 2013-10-30 2015-05-07 京セラサーキットソリューションズ株式会社 配線基板およびその製造方法
CN104602459A (zh) * 2013-10-30 2015-05-06 京瓷电路科技株式会社 布线基板及其制造方法
JP2022021766A (ja) * 2020-07-22 2022-02-03 キオクシア株式会社 半導体装置
JP7490484B2 (ja) 2020-07-22 2024-05-27 キオクシア株式会社 半導体装置
JP2023067260A (ja) * 2021-10-29 2023-05-16 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
JP7708643B2 (ja) 2021-10-29 2025-07-15 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法

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