JP2018082130A - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 218
- 239000002184 metal Substances 0.000 claims abstract description 218
- 230000002093 peripheral effect Effects 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 25
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 5
- 230000007480 spreading Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 309
- 229910000679 solder Inorganic materials 0.000 description 45
- 239000010949 copper Substances 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910005728 SnZn Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3473—Plating of solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/041—Solder preforms in the shape of solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0415—Small preforms other than balls, e.g. discs, cylinders or pillars
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0465—Shape of solder, e.g. differing from spherical shape, different shapes due to different solder pads
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
図1は、第1の実施の形態に係る配線基板を例示する断面図であり、図1(a)は配線層と絶縁層が交互に複数積層された配線基板の一部を示した図、図1(b)は図1(a)のA部の部分拡大図である。
次に、第1の実施の形態に係る配線基板の製造方法について説明する。図3〜図5は、第1の実施の形態に係る配線基板の製造工程を例示する図である。なお、本実施の形態では、単品の配線基板を形成する工程を示すが、配線基板となる複数の部分を作製後、個片化して各配線基板とする工程としてもよい。
第1の実施の形態の変形例1では、配線基板1の製造方法の他の例を示す。なお、第1の実施の形態の変形例1において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
第2の実施の形態では、配線層20上に他の金属層を設ける例を示す。なお、第2の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
10 絶縁層
20 配線層
30 ソルダーレジスト層
30x 開口部
40、40A バンプ
41、41A 突起金属層
41x 切り欠き
42、43、44、45 金属層
48 表面金属層
Claims (9)
- 配線層と、
前記配線層を被覆する絶縁層と、
前記絶縁層の上面から突起する突起電極と、を有し、
前記突起電極は、前記絶縁層に形成された開口部内に露出する前記配線層と接続され、前記絶縁層の上面から突起すると共に前記開口部の周囲の前記絶縁層の上面上に延在する突起金属層と、
前記突起金属層の表面を被覆する表面金属層と、を備え、
前記開口部の周囲の前記絶縁層の上面上に延在する前記突起金属層には、外周面から内方に窪んで前記突起金属層の底面と前記絶縁層の上面との間に空間を形成する切り欠きが設けられ、
前記空間は、前記開口部側から前記突起金属層の外周面側に向かうに従って高さが拡大し、
前記表面金属層は、前記突起金属層よりも低融点の金属で形成され、前記絶縁層の上面と接しないように形成されている配線基板。 - 前記表面金属層は、前記突起金属層の上面及び外周面を被覆し、前記切り欠き内には延在しないように形成されている請求項1に記載の配線基板。
- 前記突起金属層の上面は、凸状に湾曲している請求項1又は2に記載の配線基板。
- 前記突起金属層は、前記開口部の周囲に位置する前記絶縁層の上面、前記開口部の内壁面、及び前記開口部内に露出する前記配線層の上面を被覆する第1金属層と、
前記第1金属層上に形成されて前記絶縁層の上面から突起する第2金属層と、を有し、
前記絶縁層の上面から前記切り欠きの最高部までの高さは、前記第1金属層の厚さよりも高い請求項1乃至3の何れか一項に記載の配線基板。 - 前記配線層と前記第1金属層との間にニッケル層を設けた請求項4に記載の配線基板。
- 前記ニッケル層上に、前記ニッケル層の腐食を防止するバリア層を設けた請求項5に記載の配線基板。
- 配線層を被覆する絶縁層を形成し、前記絶縁層に前記配線層の上面を露出する第1開口部を形成する工程と、
前記絶縁層上に、前記第1開口部及び前記第1開口部の周囲を露出する第2開口部を備えたレジスト層を形成する工程と、
前記第2開口部内に露出する前記配線層上に、前記配線層と接続され前記絶縁層の上面から突起すると共に前記第1開口部の周囲の前記絶縁層の上面上に延在する突起金属層を形成する工程と、
前記第2開口部内に露出する前記突起金属層の上面を被覆する表面金属層を形成する工程と、
前記レジスト層を除去する工程と、
前記表面金属層を溶融後凝固させ、前記表面金属層を前記突起金属層の上面から外周面に濡れ広がらせる工程と、を有し、
前記第1開口部の周囲の前記絶縁層の上面上に延在する前記突起金属層には、外周面から内方に窪んで前記突起金属層の底面と前記絶縁層の上面との間に空間を形成する切り欠きが設けられ、
前記空間は、前記第1開口部側から前記突起金属層の外周面側に向かうに従って高さが拡大し、
前記表面金属層は、前記突起金属層よりも低融点の金属で形成され、前記絶縁層の上面と接しないように形成される配線基板の製造方法。 - 前記レジスト層を形成する工程では、前記第2開口部の内壁面の下方に、前記切り欠きに対応する裾引き形状を形成する請求項7に記載の配線基板の製造方法。
- 前記レジスト層を除去する工程の後に、前記突起金属層の前記絶縁層の上面側を選択的にエッチングして前記切り欠きを形成する請求項7に記載の配線基板の製造方法。
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US15/784,296 US9918378B1 (en) | 2016-11-18 | 2017-10-16 | Wiring substrate |
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CN110660896A (zh) * | 2019-10-24 | 2020-01-07 | 侯立东 | 一种led封装结构及其封装方法 |
CN112242222A (zh) * | 2019-07-18 | 2021-01-19 | 株式会社村田制作所 | 基体 |
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CN109729639B (zh) * | 2018-12-24 | 2020-11-20 | 奥特斯科技(重庆)有限公司 | 在无芯基板上包括柱体的部件承载件 |
JP2021093417A (ja) * | 2019-12-09 | 2021-06-17 | イビデン株式会社 | プリント配線板、及び、プリント配線板の製造方法 |
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JP2021019043A (ja) * | 2019-07-18 | 2021-02-15 | 株式会社村田製作所 | 基体 |
CN112242222B (zh) * | 2019-07-18 | 2022-11-29 | 株式会社村田制作所 | 基体 |
US11694839B2 (en) | 2019-07-18 | 2023-07-04 | Murata Manufacturing Co., Ltd. | Base configured as an electronic component or a circuit board |
CN110660896A (zh) * | 2019-10-24 | 2020-01-07 | 侯立东 | 一种led封装结构及其封装方法 |
CN110660896B (zh) * | 2019-10-24 | 2020-11-24 | 福建龙业光电科技有限公司 | 一种led封装结构及其封装方法 |
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