JP2011258590A - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
- Publication number
- JP2011258590A JP2011258590A JP2010128983A JP2010128983A JP2011258590A JP 2011258590 A JP2011258590 A JP 2011258590A JP 2010128983 A JP2010128983 A JP 2010128983A JP 2010128983 A JP2010128983 A JP 2010128983A JP 2011258590 A JP2011258590 A JP 2011258590A
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- opening
- layer
- wiring
- insulating layer
- wiring board
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L21/486—Via connections through the substrate with or without pins
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H05K3/3431—Leadless components
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- Y10T29/49155—Manufacturing circuit on or in base
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
【解決手段】本配線基板は、複数の配線層と、絶縁性樹脂から構成された複数の絶縁層とが交互に積層され、最上層の配線層を被覆する最上層の絶縁層には、前記最上層の配線層の一部を露出する開口部が形成され、前記開口部の側壁の断面は凹型R形状であり、前記開口部内に露出する前記最上層の配線層には凹部が形成されている。
【選択図】図3
Description
第1の実施の形態では、本発明を、半導体チップを搭載することにより半導体パッケージとなる配線基板に適用する例を示す。
始めに、第1の実施の形態に係る配線基板の構造について説明する。図3は、第1の実施の形態に係る配線基板を例示する断面図である。図3を参照するに、第1の実施の形態に係る配線基板10は、第1配線層11、第1絶縁層12、第2配線層13、第2絶縁層14、第3配線層15、第3絶縁層16が順次積層された構造を有する。
続いて、第1の実施の形態に係る配線基板の製造方法について説明する。図6〜図14は、第1の実施の形態に係る配線基板の製造工程を例示する図である。
第1の実施の形態では、最上層の絶縁層の開口部内に露出する最上層の配線層の凹部がマザーボード等の実装基板と電気的に接続される電極パッドとして機能し、最下層の絶縁層から露出する最下層の配線層が半導体チップ等と電気的に接続される電極パッドとして機能する例を示した。
第1の実施の形態では、最上層の絶縁層に、ブラスト処理により開口部を形成する例を示した。第1の実施の形態の変形例2では、最上層の絶縁層に、ブラスト処理(1回目のブラスト処理)により開口部を形成した後、開口部近傍に2回目のブラスト処理を施す例を示す。以下、第1の実施の形態と同一構成部分の説明は極力省略し、第1の実施の形態と異なる部分を中心に説明する。
第1の実施の形態では、最上層の絶縁層に、ブラスト処理により平面形状が略円形の開口部を形成する例を示した。第1の実施の形態の変形例3では、ブラスト処理により平面形状が略矩形の開口部を形成する例を示す。以下、第1の実施の形態と同一構成部分の説明は極力省略し、第1の実施の形態と異なる部分を中心に説明する。
第1の実施の形態では、非感光性の絶縁性樹脂を用いて最上層の絶縁層を形成する例を示した。第2の実施の形態では、ガラスクロスに非感光性の絶縁性樹脂を含浸させた材料を用いて最上層の絶縁層を形成する例を示す。以下、第1の実施の形態と同一構成部分の説明は極力省略し、第1の実施の形態と異なる部分を中心に説明する。
第3の実施の形態では、第1の実施の形態に係る配線基板10(図3参照)に半導体チップを搭載した半導体パッケージの例を示す。以下、第1の実施の形態と同一構成部分の説明は極力省略し、第1の実施の形態と異なる部分を中心に説明する。
第4の実施の形態では、第1の実施の形態の変形例1に係る配線基板10A(図15参照)に半導体チップを搭載した半導体パッケージの例を示す。以下、第1の実施の形態の変形例1と同一構成部分の説明は極力省略し、第1の実施の形態の変形例1と異なる部分を中心に説明する。
図26は、実施例1に係る配線基板の開口部近傍の電子顕微鏡写真(SEM)である。実施例1に係る配線基板は、図6〜図14に示す方法により製造したものである。第3配線層15は、銅(Cu)により形成した。又、第3絶縁層16は、非感光性のエポキシ系樹脂により形成した。開口部16x及び凹部15xは、研磨剤の粒径を5〜20μm程度とし、研磨剤の濃度を14vol%程度とし、噴射圧力を0.25MPa程度としたウェットブラスト処理により形成した。
11、11A 第1配線層
11a、11c 第1層
11b、11d 第2層
12 第1絶縁層
12x 第1ビアホール
13 第2配線層
14 第2絶縁層
14x 第2ビアホール
15 第3配線層
15w、15x、15y、15z 凹部
16、56 第3絶縁層
16w、16x、16y、16z、22x、23x、56x 開口部
21 支持体
22、23 レジスト層
31 導電性ボール
41 はんだ
42 キャパシタ
51 ガラスクロス
51a、51b ガラス繊維束
70、80 半導体パッケージ
71、81 半導体チップ
72、82 本体
73、83 電極パッド
74、84 バンプ
75、85 アンダーフィル樹脂
B 領域
C 角部
Claims (11)
- 複数の配線層と、絶縁性樹脂から構成された複数の絶縁層とが交互に積層され、
最上層の配線層を被覆する最上層の絶縁層には、前記最上層の配線層の一部を露出する開口部が形成され、
前記開口部の側壁の断面は凹型R形状であり、
前記開口部内に露出する前記最上層の配線層には凹部が形成されている配線基板。 - 前記凹部の側壁の断面は凹型R形状であり、
前記凹部の側壁の最外縁部は、前記開口部の側壁の最内縁部と一致している請求項1記載の配線基板。 - 各絶縁層は、同一組成の非感光性の絶縁性樹脂からなり、同一組成のフィラーを含有している請求項1又は2記載の配線基板。
- 前記開口部の側壁の面粗度は、前記最上層の絶縁層の上面の面粗度よりも大きい請求項1乃至3の何れ一項記載の配線基板。
- 前記最上層の絶縁層は、補強部材と絶縁性樹脂から構成されている請求項1乃至4の何れ一項記載の配線基板。
- 複数の配線層と、絶縁性樹脂から構成された複数の絶縁層とを交互に積層する第1工程と、
最上層の配線層を被覆する最上層の絶縁層に、ブラスト処理により側壁の断面が凹型R形状の開口部を形成し、前記開口部内に前記最上層の配線層の一部を露出させる第2工程と、
前記第2工程に引き続き、前記開口部内に露出する前記最上層の配線層に、ブラスト処理により凹部を形成する第3工程と、を有する配線基板の製造方法。 - 前記第1工程では、支持体上に前記複数の配線層と前記複数の絶縁層とを交互に積層し、
前記第3工程よりも後に、前記第1工程で前記支持体上に積層された前記複数の配線層と前記複数の絶縁層から前記支持体を除去して配線基板を得る請求項6記載の配線基板の製造方法。 - 前記第2工程よりも前に、前記最上層の絶縁層の上面に、前記開口部が形成される部分のみを露出するマスクを配置する工程を有し、
前記第2工程では、前記マスクを介して前記最上層の絶縁層の上面に前記ブラスト処理を行い、前記開口部を形成する請求項6又は7記載の配線基板の製造方法。 - 前記第3工程よりも後に、前記開口部及び前記凹部をブラスト処理し、前記開口部及び前記凹部の角部の断面を凸型R形状にする請求項6乃至8の何れ一項記載の配線基板の製造方法。
- 前記最上層の絶縁層は、補強部材と絶縁性樹脂から構成され、
前記第2工程では、前記開口部内に前記補強部材の端部が突出しないように前記ブラスト処理を行う請求項6乃至9の何れ一項記載の配線基板の製造方法。 - 前記ブラスト処理は、ウェットブラスト処理である請求項6乃至10の何れ一項記載の配線基板の製造方法。
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