JP2011233873A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2011233873A JP2011233873A JP2011083263A JP2011083263A JP2011233873A JP 2011233873 A JP2011233873 A JP 2011233873A JP 2011083263 A JP2011083263 A JP 2011083263A JP 2011083263 A JP2011083263 A JP 2011083263A JP 2011233873 A JP2011233873 A JP 2011233873A
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- insulating film
- film
- transistor
- forming
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 407
- 238000000034 method Methods 0.000 title claims abstract description 122
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000005498 polishing Methods 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000011229 interlayer Substances 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 8
- 238000004380 ashing Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 479
- 239000000463 material Substances 0.000 description 80
- 239000000758 substrate Substances 0.000 description 49
- 238000010438 heat treatment Methods 0.000 description 46
- 239000010410 layer Substances 0.000 description 44
- 239000003990 capacitor Substances 0.000 description 37
- 239000012535 impurity Substances 0.000 description 37
- 230000015572 biosynthetic process Effects 0.000 description 35
- 230000000694 effects Effects 0.000 description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 34
- 238000004364 calculation method Methods 0.000 description 31
- 239000007789 gas Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 230000006870 function Effects 0.000 description 21
- 238000007667 floating Methods 0.000 description 20
- 229910007541 Zn O Inorganic materials 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 18
- 229910044991 metal oxide Inorganic materials 0.000 description 18
- 150000004706 metal oxides Chemical class 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000012298 atmosphere Substances 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- 229910000449 hafnium oxide Inorganic materials 0.000 description 12
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052735 hafnium Inorganic materials 0.000 description 9
- 150000002736 metal compounds Chemical group 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000011701 zinc Substances 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- -1 for example Inorganic materials 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 208000005156 Dehydration Diseases 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000006356 dehydrogenation reaction Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052990 silicon hydride Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910019092 Mg-O Inorganic materials 0.000 description 2
- 229910019395 Mg—O Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229940038504 oxygen 100 % Drugs 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
【解決手段】平坦な表面上に絶縁膜を形成し、絶縁膜上にマスクを形成し、マスクにスリミング処理を行い、マスクを用いて絶縁膜にエッチング処理を行い、絶縁膜を覆うように導電膜を形成し、導電膜および絶縁膜に研磨処理を行うことにより、導電膜および絶縁膜の厚さを等しくし、導電膜をエッチングして、導電膜より厚さの小さいソース電極およびドレイン電極を形成し、絶縁膜、ソース電極、およびドレイン電極と接する酸化物半導体膜を形成し、酸化物半導体膜を覆うゲート絶縁膜を形成し、ゲート絶縁膜上の絶縁膜と重畳する領域にゲート電極を形成する。
【選択図】図1
Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成およびその作製方法について、図1および図2を参照して説明する。
図1には、半導体装置の構成例を示す。図1(A)は、第1の構成例であり、図1(B)は、第2の構成例である。
次に、上記半導体装置の作製方法の例について、図2を参照して説明する。ここで、図2は図1(A)に示すトランジスタ162の作製方法の例について示す図である。
本実施の形態では、開示する発明の別の一態様に係る半導体装置の構成およびその作製方法について、図3乃至図5を参照して説明する。
図3は、半導体装置の構成の一例である。図3(A)には、半導体装置の断面を、図3(B)には、半導体装置の平面を、図3(C)には半導体装置の回路構成を、それぞれ示す。なお、当該半導体装置の動作の詳細については後の実施の形態において詳述するから、本実施の形態では主として半導体装置の構成について述べるものとする。なお、図3に示す半導体装置は、所定の機能を有する半導体装置の一例であって、開示する発明の半導体装置をもれなく表現したものではない。開示する発明に係る半導体装置は、電極の接続関係等を適宜変更して、その他の機能を有することが可能である。
次に、上記半導体装置の作製方法の一例について図4および図5を用いて説明する。なお、トランジスタ162の作製方法は先の実施の形態と同様であるため、ここでは主として、トランジスタ160の作製方法について説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の応用例について、図6を参照して説明する。ここでは、記憶装置の一例について説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
本実施の形態では、開示する発明の一態様に係る半導体装置の応用例について、図7および図8を用いて説明する。ここでは、記憶装置の一例について説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
本実施の形態では、開示する発明の一態様に係る半導体装置の応用例について、図9を参照して説明する。ここでは、中央演算処理装置(CPU)について説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の応用例について、図10を参照して説明する。ここでは、対象物の情報を読み取るイメージセンサ機能を有する半導体装置の一例について説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図11を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
・酸化物半導体膜の膜厚:10nm
・酸化物半導体膜の材質:In−Ga−Zn−O系金属酸化物(バンドギャップEg:3.15eV、電子親和力(χ):4.3eV、比誘電率:15、電子移動度:10cm2/Vs)
・ゲート絶縁膜の膜厚:10nm
・ゲート絶縁膜の材質:酸化ハフニウム(比誘電率:15)
・ソース電極、ドレイン電極の材質:窒化チタン(仕事関数:3.9eV)
・ゲート電極の材質:タングステン(仕事関数:4.9eV)
・In−Ga−Zn−O系の酸化物半導体(酸化物半導体膜の材料)
バンドギャップEg:3.15eV、電子親和力χ:4.3eV、比誘電率:15、電子移動度:10cm2/Vs
・窒化チタン(ソース電極およびドレイン電極の材料)
仕事関数φM:3.9eV
・酸化ハフニウム(ゲート絶縁膜の材料)
比誘電率:15
・タングステン(ゲート電極の材料)
仕事関数φM:4.9eV
102 保護層
104 半導体領域
106 素子分離絶縁膜
108 ゲート絶縁膜
110 ゲート電極
116 チャネル形成領域
120 不純物領域
122 金属層
124 金属化合物領域
130 絶縁膜
140 基体
142 導電膜
142a 導電膜
142b 導電膜
142c ソース電極
142d ドレイン電極
143 絶縁膜
143a 絶縁膜
144 酸化物半導体膜
146 ゲート絶縁膜
148a ゲート電極
148b 電極
150 絶縁膜
152 絶縁膜
160 トランジスタ
162 トランジスタ
164 容量素子
240 基体
242c ソース電極
242d ドレイン電極
243b 絶縁膜
244 酸化物半導体膜
246 ゲート絶縁膜
248a ゲート電極
250 絶縁膜
252 絶縁膜
262 トランジスタ
701 筐体
702 筐体
703 表示部
704 キーボード
711 本体
712 スタイラス
713 表示部
714 操作ボタン
715 外部インターフェイス
720 電子書籍
721 筐体
723 筐体
725 表示部
727 表示部
731 電源
733 操作キー
735 スピーカー
737 軸部
740 筐体
741 筐体
742 表示パネル
743 スピーカー
744 マイクロフォン
745 操作キー
746 ポインティングデバイス
747 カメラ用レンズ
748 外部接続端子
749 太陽電池セル
750 外部メモリスロット
761 本体
763 接眼部
764 操作スイッチ
765 表示部
766 バッテリー
767 表示部
770 テレビジョン装置
771 筐体
773 表示部
775 スタンド
780 リモコン操作機
1000 トランジスタ
1010 トランジスタ
1020 容量素子
1050 メモリセル
1101 CPU
1102 タイミングコントロール回路
1103 命令解析デコーダー
1104 レジスタアレイ
1105 アドレスロジックバッファ回路
1106 データバスインターフェイス
1107 ALU
1108 命令レジスタ
1202 フォトダイオード
1204 トランジスタ
1206 トランジスタ
1212 フォトダイオードリセット信号線
1214 ゲート信号線
1216 フォトセンサ出力信号線
1218 フォトセンサ基準信号線
1222 基板
1224 基板
1228 接着層
1230 入射光
1234 絶縁膜
1236 層間絶縁膜
1238 層間絶縁膜
1240 ゲート電極層
1242 電極層
1244 電極層
1226a 第1半導体膜
1226b 第2半導体膜
1226c 第3半導体膜
Claims (13)
- 平坦な表面上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1のマスクを形成し、
前記第1のマスクにスリミング処理を行うことにより、第2のマスクを形成し、
前記第2のマスクを用いて前記第1の絶縁膜にエッチング処理を行うことにより、第2の絶縁膜を形成し、
前記第2の絶縁膜を覆うように第1の導電膜を形成し、
前記第1の導電膜および前記第2の絶縁膜に研磨処理を行うことにより、等しい厚さの第2の導電膜および第3の絶縁膜を形成し、
前記第2の導電膜をエッチングして、前記第2の導電膜より厚さの小さいソース電極およびドレイン電極を形成し、
前記第3の絶縁膜の表面の一部、前記ソース電極の表面の一部、および前記ドレイン電極の表面の一部と接する酸化物半導体膜を形成し、
前記酸化物半導体膜を覆うゲート絶縁膜を形成し、
前記ゲート絶縁膜上の前記第3の絶縁膜と重畳する領域にゲート電極を形成する、半導体装置の作製方法。 - 前記ソース電極および前記ドレイン電極を前記第3の絶縁膜より5nm以上20nm以下薄くなるように形成する、請求項2に記載の半導体装置の作製方法。
- 平坦な表面上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1のマスクを形成し、
前記第1のマスクにスリミング処理を行うことにより、第2のマスクを形成し、
前記第2のマスクを用いて前記第1の絶縁膜にエッチング処理を行うことにより、第2の絶縁膜を形成し、
前記第2の絶縁膜を覆うように第1の導電膜を形成し、
前記第1の導電膜および前記第2の絶縁膜に研磨処理を行うことにより、等しい厚さの第2の導電膜および第3の絶縁膜を形成し、
前記第2の導電膜および前記第3の絶縁膜をエッチングして、角が除去された第4の絶縁膜を形成すると共に、前記第2の導電膜および前記第4の絶縁膜より厚さの小さいソース電極およびドレイン電極を形成し、
前記第4の絶縁膜の表面の一部、前記ソース電極の表面の一部、および前記ドレイン電極の表面の一部と接する酸化物半導体膜を形成し、
前記酸化物半導体膜を覆うゲート絶縁膜を形成し、
前記ゲート絶縁膜上の前記第4の絶縁膜と重畳する領域にゲート電極を形成する、半導体装置の作製方法。 - 前記ソース電極および前記ドレイン電極を前記第4の絶縁膜より5nm以上20nm以下薄くなるように形成する、請求項3に記載の半導体装置の作製方法。
- チャネル形成領域と、前記チャネル形成領域上の第1のゲート絶縁膜と、前記チャネル形成領域と重畳する、前記第1のゲート絶縁膜上の第1のゲート電極と、前記チャネル形成領域と電気的に接続する第1のソース電極および第1のドレイン電極と、を有する第1のトランジスタを形成し、
前記第1のトランジスタを覆う平坦な表面を有する層間絶縁膜を形成し、
前記層間絶縁膜上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1のマスクを形成し、
前記第1のマスクにスリミング処理を行うことにより、第2のマスクを形成し、
前記第2のマスクを用いて前記第1の絶縁膜にエッチング処理を行うことにより、第2の絶縁膜を形成し、
前記第2の絶縁膜を覆うように第1の導電膜を形成し、
前記第1の導電膜および前記第2の絶縁膜に研磨処理を行うことにより、等しい厚さの第2の導電膜および第3の絶縁膜を形成し、
前記第2の導電膜をエッチングして、前記第2の導電膜より厚さの小さい第2のソース電極および第2のドレイン電極を形成し、
前記第3の絶縁膜の表面の一部、前記第2のソース電極の表面の一部、および前記第2のドレイン電極の表面の一部と接する酸化物半導体膜を形成し、
前記酸化物半導体膜を覆う第2のゲート絶縁膜を形成し、
前記第2のゲート絶縁膜上の前記第3の絶縁膜と重畳する領域に第2のゲート電極を形成する、半導体装置の作製方法。 - 前記第2のソース電極および前記第2のドレイン電極を前記第3の絶縁膜より5nm以上20nm以下薄くなるように形成する、請求項5に記載の半導体装置の作製方法。
- チャネル形成領域と、前記チャネル形成領域上の第1のゲート絶縁膜と、前記チャネル形成領域と重畳する、前記第1のゲート絶縁膜上の第1のゲート電極と、前記チャネル形成領域と電気的に接続する第1のソース電極および第1のドレイン電極と、を有する第1のトランジスタを形成し、
前記第1のトランジスタを覆う平坦な表面を有する層間絶縁膜を形成し、
前記層間絶縁膜上に第1の絶縁膜を形成し、
前記第1の絶縁膜上に第1のマスクを形成し、
前記第1のマスクにスリミング処理を行うことにより、第2のマスクを形成し、
前記第2のマスクを用いて前記第1の絶縁膜にエッチング処理を行うことにより、第2の絶縁膜を形成し、
前記第2の絶縁膜を覆うように第1の導電膜を形成し、
前記第1の導電膜および前記第2の絶縁膜に研磨処理を行うことにより、等しい厚さの第2の導電膜および第3の絶縁膜を形成し、
前記第2の導電膜および前記第3の絶縁膜をエッチングして、角が除去された第4の絶縁膜を形成すると共に、前記第2の導電膜および前記第4の絶縁膜より厚さの小さい第2のソース電極および第2のドレイン電極を形成し、
前記第4の絶縁膜の表面の一部、前記第2のソース電極の表面の一部、および前記第2のドレイン電極の表面の一部と接する酸化物半導体膜を形成し、
前記酸化物半導体膜を覆う第2のゲート絶縁膜を形成し、
前記第2のゲート絶縁膜上の前記第4の絶縁膜と重畳する領域に第2のゲート電極を形成する、半導体装置の作製方法。 - 前記第2のソース電極および前記第2のドレイン電極を前記第4の絶縁膜より5nm以上20nm以下薄くなるように形成する、請求項7に記載の半導体装置の作製方法。
- 前記第3の絶縁膜の厚さは前記第2の絶縁膜の厚さに略等しい、請求項1乃至8のいずれか一に記載の半導体装置の作製方法。
- 前記平坦な表面を二乗平均平方根粗さが1nm以下の表面とする、請求項1乃至9のいずれか一に記載の半導体装置の作製方法。
- 前記スリミング処理は、酸素ラジカルを用いるアッシング処理である、請求項1乃至10のいずれか一に記載の半導体装置の作製方法。
- 前記研磨処理は、化学的機械研磨により行う、請求項1乃至11のいずれか一に記載の半導体装置の作製方法。
- 前記第1の絶縁膜は、スパッタ処理を用いて形成する、請求項1乃至12のいずれか一に記載の半導体装置の作製方法。
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