JP2011228691A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011228691A
JP2011228691A JP2011078199A JP2011078199A JP2011228691A JP 2011228691 A JP2011228691 A JP 2011228691A JP 2011078199 A JP2011078199 A JP 2011078199A JP 2011078199 A JP2011078199 A JP 2011078199A JP 2011228691 A JP2011228691 A JP 2011228691A
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Prior art keywords
film
oxide semiconductor
oxide
semiconductor film
transistor
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JP2011078199A
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Japanese (ja)
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JP2011228691A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011078199A priority Critical patent/JP2011228691A/ja
Publication of JP2011228691A publication Critical patent/JP2011228691A/ja
Publication of JP2011228691A5 publication Critical patent/JP2011228691A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2011078199A 2010-04-02 2011-03-31 半導体装置 Withdrawn JP2011228691A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011078199A JP2011228691A (ja) 2010-04-02 2011-03-31 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010086497 2010-04-02
JP2010086497 2010-04-02
JP2011078199A JP2011228691A (ja) 2010-04-02 2011-03-31 半導体装置

Related Child Applications (1)

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JP2015163408A Division JP6200468B2 (ja) 2010-04-02 2015-08-21 半導体装置

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JP2011228691A true JP2011228691A (ja) 2011-11-10
JP2011228691A5 JP2011228691A5 (enExample) 2014-05-15

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JP2015163408A Expired - Fee Related JP6200468B2 (ja) 2010-04-02 2015-08-21 半導体装置

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US (1) US9147768B2 (enExample)
JP (2) JP2011228691A (enExample)

Cited By (2)

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JP2014003280A (ja) * 2012-04-20 2014-01-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2023053264A (ja) * 2018-03-12 2023-04-12 株式会社半導体エネルギー研究所 トランジスタ

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US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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WO2011132591A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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CN102859704B (zh) 2010-04-23 2016-08-03 株式会社半导体能源研究所 半导体装置的制造方法
KR102390961B1 (ko) 2010-04-23 2022-04-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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KR101932576B1 (ko) 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
WO2012172746A1 (en) 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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TWI562361B (en) 2012-02-02 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
TWI582993B (zh) 2012-11-30 2017-05-11 半導體能源研究所股份有限公司 半導體裝置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US20150287831A1 (en) * 2014-04-08 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including semiconductor device
US11302717B2 (en) * 2016-04-08 2022-04-12 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法

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