JP2011199287A - フィン型電界効果トランジスタおよびその製造方法 - Google Patents
フィン型電界効果トランジスタおよびその製造方法 Download PDFInfo
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- JP2011199287A JP2011199287A JP2011057767A JP2011057767A JP2011199287A JP 2011199287 A JP2011199287 A JP 2011199287A JP 2011057767 A JP2011057767 A JP 2011057767A JP 2011057767 A JP2011057767 A JP 2011057767A JP 2011199287 A JP2011199287 A JP 2011199287A
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- 230000005669 field effect Effects 0.000 title abstract description 6
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000003989 dielectric material Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 32
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】半導体基板より上に延伸したfinFETの第1および第2のフィン206を、その間にシャロートレンチアイソレーション(STI)領域202、およびSTI領域の上面と第1および第2のフィンの上面との間の距離を有して、形成するステップ、STI領域の上面より上の第1および第2のフィンの上面および側面に第1および第2のフィン延伸部を提供するステップ、STI領域から材料を除去し、STI領域の上面と第1および第2のフィンの上面との間の距離を増加させるステップ、フィンおよびSTI領域上に共形のストレッサ誘電材料214を堆積するステップ、および共形のストレッサ誘電材料をSTI領域の上面より上の第1および第2のフィンの間の空間内に流入するようにリフローし、finFETのチャネルに応力を加えるステップを含む方法。
【選択図】図9A
Description
T2は、ストレッサ膜の所望の最終の厚さであり、
A2は、STI領域の表面積であり、かつ
A1は、共形膜214が始めに堆積された水平表面積である。
101 半導体基板
102 シャロートレンチアイソレーション(STI)領域
106 フィン
106e シリコンゲルマニウム(SiGe)層
106L 横方向延伸部
106w ウィンドウ(window)
107 ステップ高
108 多結晶シリコンゲート電極
109 距離
110 側壁スペーサ
112 シリコン酸化物ハードマスク
200 フィン型電界効果トランジスタ(finFETs)
201 半導体基板
202 シャロートレンチアイソレーション(STI)領域
203 軽ドープドレイン(LDD)/ポケット注入ステップ
206 フィン
206e シリコンゲルマニウム(SiGe)層
206L 横方向延伸部
206w ウィンドウ(window)
207a 第1距離
207b 第2距離
208 ゲート電極
210、211 ダミー側壁(DSW)
212 ハードマスク層
214 共形のストレッサ誘電材料
214r ストレッサ層
214s 垂直薄膜(または側壁スペーサ)
217 ソースおよびドレインドーパント注入
220 コンタクトエッチングストップ層(CESL)
230 層間誘電体(ILD)
H1、H2 距離
T1 ストレッサ材料薄膜の厚さ
T2 T3およびT4の厚さ
T3 フィン延伸部の底部より上のストレッサ材料の厚さ
T4 フィン延伸部の底部より下のストレッサ材料の厚さ
1101〜1106、1201〜1206 曲線
Claims (10)
- 半導体基板より上に延伸したfinFETの第1および第2のフィンを、その間にシャロートレンチアイソレーション(STI)領域、および前記STI領域の上面と前記第1および第2のフィンの上面との間の距離を有して、形成するステップ、
前記STI領域の上面より上に前記第1および第2のフィンの上面および側面に第1および第2のフィン延伸部を提供するステップ、
前記STI領域から材料を除去し、前記STI領域の上面と前記第1および第2のフィンの上面との間の距離を増加させるステップ、
前記フィンおよびSTI領域上に共形のストレッサ誘電材料を堆積するステップ、および
前記共形のストレッサ誘電材料を前記STI領域の上面より上の前記第1および第2のフィンの間の空間内に流入するようにリフローし、前記finFETのチャネルに応力を加えるステップを含む方法。 - 前記堆積のステップは、前記共形のストレッサ誘電材料を前記finFETのゲート電極上に堆積するステップを含む請求項1に記載の方法。
- 前記リフローのステップは、前記ゲート電極に隣接する前記ストレッサ材料の薄膜を残し、側壁スペーサを形成する請求項2に記載の方法。
- 前記側壁スペーサを形成後、ソースおよびドレインドーパント注入を行うステップを更に含む請求項3に記載の方法。
- 前記フィン延伸部を提供するステップは、SiGe薄膜を前記第1および第2のフィンの上面および側面上に堆積するステップを含む請求項1ないし4の何れかに記載の方法。
- 前記材料を除去するステップは、前記STI領域の上面を前記フィン延伸部の底部より下の距離だけ下げるステップを含む請求項1ないし5の何れかに記載の方法。
- 前記リフローのステップは、前記ストレッサ材料の十分な量を前記STI領域の上部の空間内に流入し、前記空間を前記フィン延伸部の底部より上の高さまで、少なくとも部分的に充填するステップを含む請求項6に記載の方法。
- 前記ストレッサ材料は、約1GPa〜約3GPaの圧縮応力を前記フィン延伸部上のコンタクトエッチングストップ層(CESL)に加える請求項1ないし7の何れかに記載の方法。
- 半導体基板より上に延伸した第1および第2のフィンであって、その間にシャロートレンチアイソレーションの誘電材料を有するシャロートレンチアイソレーション(STI)領域、および前記STI誘電材料の上面と前記第1および第2のフィンの上面との間の距離を有すること、
前記第1および第2のファン上のゲート電極、
前記STI誘電材料の上面より上の、前記第1および第2のフィンの上面および側面にある第1および第2のSiGeフィン延伸部、
前記STI材料の上面より上の、前記第1および第2のフィンの間に規定された空間にあり、前記finFETのチャネル領域に応力を加えるストレッサ誘電材料、および
前記ゲート電極に隣接し、側壁スペーサを形成するストレッサ誘電材料の薄膜を含むfinFET。 - 前記ストレッサ材料の上面は、前記SiGeフィン延伸部の底部より上にある請求項9に記載のfinFET。
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US9024364B2 (en) | 2012-03-12 | 2015-05-05 | Kabushiki Kaisha Toshiba | Fin-FET with mechanical stress of the fin perpendicular to the substrate direction |
US9252277B2 (en) | 2012-03-12 | 2016-02-02 | Kabushiki Kaisha Toshiba | Semiconductor device |
US8884298B2 (en) | 2012-06-25 | 2014-11-11 | Samsung Electronics Co., Ltd. | Semiconductor device having embedded strain-inducing pattern and method of forming the same |
US8962435B2 (en) | 2012-06-25 | 2015-02-24 | Samsung Electronics Co., Ltd. | Method of forming semiconductor device having embedded strain-inducing pattern |
US9240481B2 (en) | 2012-06-25 | 2016-01-19 | Samsung Electronics Co., Ltd. | Semiconductor device having embedded strain-inducing pattern |
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US10515856B2 (en) | 2019-12-24 |
US20110227162A1 (en) | 2011-09-22 |
US9312179B2 (en) | 2016-04-12 |
JP5452529B2 (ja) | 2014-03-26 |
JP5744145B2 (ja) | 2015-07-01 |
CN102194756A (zh) | 2011-09-21 |
JP2014017515A (ja) | 2014-01-30 |
KR20110104865A (ko) | 2011-09-23 |
US20160204255A1 (en) | 2016-07-14 |
KR101154915B1 (ko) | 2012-06-13 |
US10224245B2 (en) | 2019-03-05 |
US20190181048A1 (en) | 2019-06-13 |
CN102194756B (zh) | 2013-06-19 |
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