JP2011129891A5 - - Google Patents
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- JP2011129891A5 JP2011129891A5 JP2010250638A JP2010250638A JP2011129891A5 JP 2011129891 A5 JP2011129891 A5 JP 2011129891A5 JP 2010250638 A JP2010250638 A JP 2010250638A JP 2010250638 A JP2010250638 A JP 2010250638A JP 2011129891 A5 JP2011129891 A5 JP 2011129891A5
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- Prior art keywords
- transistor
- oxide semiconductor
- battery
- semiconductor device
- insulating layer
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Claims (7)
前記第１のトランジスタは、酸化物半導体を有し、The first transistor includes an oxide semiconductor;
前記第２のトランジスタは、シリコンを有し、The second transistor comprises silicon;
前記酸化物半導体は、結晶を有し、The oxide semiconductor has a crystal,
前記電池は、前記第１のトランジスタを介して前記第２のトランジスタと電気的に接続されることを特徴とする半導体装置。The semiconductor device is characterized in that the battery is electrically connected to the second transistor through the first transistor.
前記第１のトランジスタは、酸化物半導体を有し、The first transistor includes an oxide semiconductor;
前記第２のトランジスタは、シリコンを有し、The second transistor comprises silicon;
前記絶縁層は、前記酸化物半導体と接する領域を有し、The insulating layer has a region in contact with the oxide semiconductor,
前記酸化物半導体は、結晶を有し、The oxide semiconductor has a crystal,
前記電池は、前記第１のトランジスタを介して前記第２のトランジスタと電気的に接続されることを特徴とする半導体装置。The semiconductor device is characterized in that the battery is electrically connected to the second transistor through the first transistor.
前記第１のトランジスタは、酸化物半導体を有し、The first transistor includes an oxide semiconductor;
前記第２のトランジスタは、シリコンを有し、The second transistor comprises silicon;
前記電池は、前記第１のトランジスタを介して前記第２のトランジスタと電気的に接続されることを特徴とする半導体装置。The semiconductor device is characterized in that the battery is electrically connected to the second transistor through the first transistor.
前記第１のトランジスタは、酸化物半導体を有し、The first transistor includes an oxide semiconductor;
前記第２のトランジスタは、シリコンを有し、The second transistor comprises silicon;
前記絶縁層は、前記酸化物半導体と接する領域を有し、The insulating layer has a region in contact with the oxide semiconductor,
前記電池は、前記第１のトランジスタを介して前記第２のトランジスタと電気的に接続されることを特徴とする半導体装置。The semiconductor device is characterized in that the battery is electrically connected to the second transistor through the first transistor.
前記絶縁層は、窒素及び／又は酸素と、珪素と、を有することを特徴とする半導体装置。The semiconductor device, wherein the insulating layer includes nitrogen and / or oxygen and silicon.
前記酸化物半導体は、水素濃度が１×１０The oxide semiconductor has a hydrogen concentration of 1 × 10. １９19 （ａｔｏｍｓ／ｃｍ(Atoms / cm ３3 ）以下の領域を有することを特徴とする半導体装置。A semiconductor device having the following regions:
前記酸化物半導体は、キャリア密度が１×１０The oxide semiconductor has a carrier density of 1 × 10. １４14 （ｃｍ(Cm −３-3 ）未満の領域を有することを特徴とする半導体装置。) A semiconductor device having a region less than
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010250638A JP5636262B2 (en) | 2009-11-20 | 2010-11-09 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009265594 | 2009-11-20 | ||
| JP2009265594 | 2009-11-20 | ||
| JP2010250638A JP5636262B2 (en) | 2009-11-20 | 2010-11-09 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014213337A Division JP5857107B2 (en) | 2009-11-20 | 2014-10-20 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011129891A JP2011129891A (en) | 2011-06-30 |
| JP2011129891A5 true JP2011129891A5 (en) | 2012-12-20 |
| JP5636262B2 JP5636262B2 (en) | 2014-12-03 |
Family
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Family Applications (9)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010250638A Active JP5636262B2 (en) | 2009-11-20 | 2010-11-09 | Semiconductor device |
| JP2014213337A Active JP5857107B2 (en) | 2009-11-20 | 2014-10-20 | Semiconductor device |
| JP2015242858A Active JP6067830B2 (en) | 2009-11-20 | 2015-12-14 | Semiconductor device |
| JP2016247397A Withdrawn JP2017059856A (en) | 2009-11-20 | 2016-12-21 | Semiconductor device |
| JP2018045142A Active JP6570683B2 (en) | 2009-11-20 | 2018-03-13 | Method for manufacturing semiconductor device |
| JP2019144460A Active JP6764984B2 (en) | 2009-11-20 | 2019-08-06 | Manufacturing method of semiconductor device |
| JP2020153668A Active JP6966611B2 (en) | 2009-11-20 | 2020-09-14 | Semiconductor device |
| JP2021172259A Withdrawn JP2022009340A (en) | 2009-11-20 | 2021-10-21 | Semiconductor device |
| JP2023116445A Pending JP2023138533A (en) | 2009-11-20 | 2023-07-18 | Semiconductor device |
Family Applications After (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014213337A Active JP5857107B2 (en) | 2009-11-20 | 2014-10-20 | Semiconductor device |
| JP2015242858A Active JP6067830B2 (en) | 2009-11-20 | 2015-12-14 | Semiconductor device |
| JP2016247397A Withdrawn JP2017059856A (en) | 2009-11-20 | 2016-12-21 | Semiconductor device |
| JP2018045142A Active JP6570683B2 (en) | 2009-11-20 | 2018-03-13 | Method for manufacturing semiconductor device |
| JP2019144460A Active JP6764984B2 (en) | 2009-11-20 | 2019-08-06 | Manufacturing method of semiconductor device |
| JP2020153668A Active JP6966611B2 (en) | 2009-11-20 | 2020-09-14 | Semiconductor device |
| JP2021172259A Withdrawn JP2022009340A (en) | 2009-11-20 | 2021-10-21 | Semiconductor device |
| JP2023116445A Pending JP2023138533A (en) | 2009-11-20 | 2023-07-18 | Semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US8467825B2 (en) |
| JP (9) | JP5636262B2 (en) |
| KR (4) | KR101829176B1 (en) |
| TW (4) | TWI605599B (en) |
| WO (1) | WO2011062042A1 (en) |
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| JP5947099B2 (en) * | 2011-05-20 | 2016-07-06 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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