JP2010532585A - 高ドープ基板の拡散制御 - Google Patents

高ドープ基板の拡散制御 Download PDF

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Publication number
JP2010532585A
JP2010532585A JP2010515106A JP2010515106A JP2010532585A JP 2010532585 A JP2010532585 A JP 2010532585A JP 2010515106 A JP2010515106 A JP 2010515106A JP 2010515106 A JP2010515106 A JP 2010515106A JP 2010532585 A JP2010532585 A JP 2010532585A
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Prior art keywords
wafer
highly doped
silicon substrate
layer
epitaxial
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Pending
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JP2010515106A
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Japanese (ja)
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JP2010532585A5 (enExample
Inventor
ロバート・ジェイ・ファルスター
ウラジミール・ウー・ウォロンコフ
ルカ・モイラーニ
リ・ドンミュン
チョ・チャンレ
マルコ・ラヴァーニ
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SunEdison Inc
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MEMC Electronic Materials Inc
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Publication of JP2010532585A publication Critical patent/JP2010532585A/ja
Publication of JP2010532585A5 publication Critical patent/JP2010532585A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249961—With gradual property change within a component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2010515106A 2007-06-29 2008-06-26 高ドープ基板の拡散制御 Pending JP2010532585A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/771,683 US20090004458A1 (en) 2007-06-29 2007-06-29 Diffusion Control in Heavily Doped Substrates
PCT/US2008/068287 WO2009006183A2 (en) 2007-06-29 2008-06-26 Diffusion control in heavily doped substrates

Publications (2)

Publication Number Publication Date
JP2010532585A true JP2010532585A (ja) 2010-10-07
JP2010532585A5 JP2010532585A5 (enExample) 2011-05-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010515106A Pending JP2010532585A (ja) 2007-06-29 2008-06-26 高ドープ基板の拡散制御

Country Status (7)

Country Link
US (3) US20090004458A1 (enExample)
EP (1) EP2162902A2 (enExample)
JP (1) JP2010532585A (enExample)
KR (1) KR20100029778A (enExample)
CN (1) CN101689487B (enExample)
TW (1) TW200921763A (enExample)
WO (1) WO2009006183A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018182211A (ja) * 2017-04-19 2018-11-15 株式会社Sumco エピタキシャルシリコンウェーハのエピタキシャル層厚の測定方法、及びエピタキシャルシリコンウェーハの製造方法
JP2021082789A (ja) * 2019-11-22 2021-05-27 株式会社アルバック 窒化物半導体基板および窒化物半導体基板の製造方法

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US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
DE102008027521B4 (de) 2008-06-10 2017-07-27 Infineon Technologies Austria Ag Verfahren zum Herstellen einer Halbleiterschicht
JP5609025B2 (ja) * 2009-06-29 2014-10-22 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
KR102050484B1 (ko) 2013-03-04 2019-12-02 삼성디스플레이 주식회사 안트라센 유도체 및 이를 포함하는 유기전계발광소자
KR102107106B1 (ko) 2013-05-09 2020-05-07 삼성디스플레이 주식회사 스티릴계 화합물 및 이를 포함한 유기 발광 소자
KR102269131B1 (ko) 2013-07-01 2021-06-25 삼성디스플레이 주식회사 화합물 및 이를 포함한 유기 발광 소자
CN103605388B (zh) * 2013-10-25 2017-01-04 上海晶盟硅材料有限公司 通过离子注入晶片检测外延炉台温场温度的方法及校正外延炉台温场方法
US10062850B2 (en) 2013-12-12 2018-08-28 Samsung Display Co., Ltd. Amine-based compounds and organic light-emitting devices comprising the same
US9269591B2 (en) * 2014-03-24 2016-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Handle wafer for high resistivity trap-rich SOI
KR20150132795A (ko) 2014-05-16 2015-11-26 삼성디스플레이 주식회사 유기 발광 소자
KR102327086B1 (ko) 2014-06-11 2021-11-17 삼성디스플레이 주식회사 유기 발광 소자
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
KR102384041B1 (ko) 2014-07-31 2022-04-08 글로벌웨이퍼스 씨오., 엘티디. 질소 도핑 및 공공 지배 실리콘 잉곳 및 그로부터 형성된, 반경방향으로 균일하게 분포된 산소 석출 밀도 및 크기를 갖는 열 처리 웨이퍼
CN104217929A (zh) * 2014-10-11 2014-12-17 王金 一种外延片及其加工方法
KR102343145B1 (ko) 2015-01-12 2021-12-27 삼성디스플레이 주식회사 축합환 화합물 및 이를 포함한 유기 발광 소자
US9711521B2 (en) 2015-08-31 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate fabrication method to improve RF (radio frequency) device performance
US9761546B2 (en) 2015-10-19 2017-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Trap layer substrate stacking technique to improve performance for RF devices
WO2018198797A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco シリコン単結晶の製造方法、エピタキシャルシリコンウェーハの製造方法、シリコン単結晶、および、エピタキシャルシリコンウェーハ
US11295949B2 (en) * 2019-04-01 2022-04-05 Vishay SIliconix, LLC Virtual wafer techniques for fabricating semiconductor devices
CN111733378B (zh) * 2020-05-15 2022-12-13 中国兵器科学研究院宁波分院 一种钢表面的涂层结构及其制备方法
CN120797198A (zh) * 2025-09-16 2025-10-17 金瑞泓微电子(嘉兴)有限公司 一种重掺硅单晶衬底制备硅外延片的方法及形成的外延片

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US20090004458A1 (en) 2009-01-01
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