CN101689487B - 重掺杂衬底中的扩散控制 - Google Patents

重掺杂衬底中的扩散控制 Download PDF

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Publication number
CN101689487B
CN101689487B CN2008800228203A CN200880022820A CN101689487B CN 101689487 B CN101689487 B CN 101689487B CN 2008800228203 A CN2008800228203 A CN 2008800228203A CN 200880022820 A CN200880022820 A CN 200880022820A CN 101689487 B CN101689487 B CN 101689487B
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China
Prior art keywords
wafer
highly doped
substrate
epitaxial loayer
epitaxial
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Expired - Fee Related
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CN2008800228203A
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Chinese (zh)
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CN101689487A (zh
Inventor
R·J·法尔斯特
L·莫伊拉吉
D·M·李
赵燦来
M·拉瓦尼
V·V·沃龙科夫
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SunEdison Inc
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SunEdison Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249961—With gradual property change within a component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2008800228203A 2007-06-29 2008-06-26 重掺杂衬底中的扩散控制 Expired - Fee Related CN101689487B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/771,683 US20090004458A1 (en) 2007-06-29 2007-06-29 Diffusion Control in Heavily Doped Substrates
US11/771,683 2007-06-29
PCT/US2008/068287 WO2009006183A2 (en) 2007-06-29 2008-06-26 Diffusion control in heavily doped substrates

Publications (2)

Publication Number Publication Date
CN101689487A CN101689487A (zh) 2010-03-31
CN101689487B true CN101689487B (zh) 2011-12-28

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CN2008800228203A Expired - Fee Related CN101689487B (zh) 2007-06-29 2008-06-26 重掺杂衬底中的扩散控制

Country Status (7)

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US (3) US20090004458A1 (enExample)
EP (1) EP2162902A2 (enExample)
JP (1) JP2010532585A (enExample)
KR (1) KR20100029778A (enExample)
CN (1) CN101689487B (enExample)
TW (1) TW200921763A (enExample)
WO (1) WO2009006183A2 (enExample)

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KR102050484B1 (ko) 2013-03-04 2019-12-02 삼성디스플레이 주식회사 안트라센 유도체 및 이를 포함하는 유기전계발광소자
KR102107106B1 (ko) 2013-05-09 2020-05-07 삼성디스플레이 주식회사 스티릴계 화합물 및 이를 포함한 유기 발광 소자
KR102269131B1 (ko) 2013-07-01 2021-06-25 삼성디스플레이 주식회사 화합물 및 이를 포함한 유기 발광 소자
CN103605388B (zh) * 2013-10-25 2017-01-04 上海晶盟硅材料有限公司 通过离子注入晶片检测外延炉台温场温度的方法及校正外延炉台温场方法
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KR102327086B1 (ko) 2014-06-11 2021-11-17 삼성디스플레이 주식회사 유기 발광 소자
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CN104217929A (zh) * 2014-10-11 2014-12-17 王金 一种外延片及其加工方法
KR102343145B1 (ko) 2015-01-12 2021-12-27 삼성디스플레이 주식회사 축합환 화합물 및 이를 포함한 유기 발광 소자
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US9761546B2 (en) 2015-10-19 2017-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Trap layer substrate stacking technique to improve performance for RF devices
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WO2018198797A1 (ja) * 2017-04-25 2018-11-01 株式会社Sumco シリコン単結晶の製造方法、エピタキシャルシリコンウェーハの製造方法、シリコン単結晶、および、エピタキシャルシリコンウェーハ
US11295949B2 (en) * 2019-04-01 2022-04-05 Vishay SIliconix, LLC Virtual wafer techniques for fabricating semiconductor devices
JP7312402B2 (ja) * 2019-11-22 2023-07-21 株式会社アルバック 窒化物半導体基板の製造方法
CN111733378B (zh) * 2020-05-15 2022-12-13 中国兵器科学研究院宁波分院 一种钢表面的涂层结构及其制备方法
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