KR20100029778A - 고농도로 도핑된 기판에서의 확산 제어 - Google Patents

고농도로 도핑된 기판에서의 확산 제어 Download PDF

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Publication number
KR20100029778A
KR20100029778A KR20097027306A KR20097027306A KR20100029778A KR 20100029778 A KR20100029778 A KR 20100029778A KR 20097027306 A KR20097027306 A KR 20097027306A KR 20097027306 A KR20097027306 A KR 20097027306A KR 20100029778 A KR20100029778 A KR 20100029778A
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South Korea
Prior art keywords
heavily doped
silicon substrate
layer
epitaxial
epitaxial layer
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KR20097027306A
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English (en)
Korean (ko)
Inventor
로버트 제이. 팰스터
블라디미르 브이. 보론코브
루카 모이라그히
동 면 이
찬래 조
마르코 라바니
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엠이엠씨 일렉트로닉 머티리얼즈, 인크.
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Publication of KR20100029778A publication Critical patent/KR20100029778A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249961—With gradual property change within a component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR20097027306A 2007-06-29 2008-06-26 고농도로 도핑된 기판에서의 확산 제어 Withdrawn KR20100029778A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/771,683 2007-06-29
US11/771,683 US20090004458A1 (en) 2007-06-29 2007-06-29 Diffusion Control in Heavily Doped Substrates

Publications (1)

Publication Number Publication Date
KR20100029778A true KR20100029778A (ko) 2010-03-17

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KR20097027306A Withdrawn KR20100029778A (ko) 2007-06-29 2008-06-26 고농도로 도핑된 기판에서의 확산 제어

Country Status (7)

Country Link
US (3) US20090004458A1 (enExample)
EP (1) EP2162902A2 (enExample)
JP (1) JP2010532585A (enExample)
KR (1) KR20100029778A (enExample)
CN (1) CN101689487B (enExample)
TW (1) TW200921763A (enExample)
WO (1) WO2009006183A2 (enExample)

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US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
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KR102050484B1 (ko) 2013-03-04 2019-12-02 삼성디스플레이 주식회사 안트라센 유도체 및 이를 포함하는 유기전계발광소자
KR102107106B1 (ko) 2013-05-09 2020-05-07 삼성디스플레이 주식회사 스티릴계 화합물 및 이를 포함한 유기 발광 소자
KR102269131B1 (ko) 2013-07-01 2021-06-25 삼성디스플레이 주식회사 화합물 및 이를 포함한 유기 발광 소자
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KR102327086B1 (ko) 2014-06-11 2021-11-17 삼성디스플레이 주식회사 유기 발광 소자
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KR102343145B1 (ko) 2015-01-12 2021-12-27 삼성디스플레이 주식회사 축합환 화합물 및 이를 포함한 유기 발광 소자
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JP6897764B2 (ja) * 2017-04-25 2021-07-07 株式会社Sumco シリコン単結晶の製造方法、および、エピタキシャルシリコンウェーハの製造方法
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Publication number Publication date
CN101689487A (zh) 2010-03-31
EP2162902A2 (en) 2010-03-17
JP2010532585A (ja) 2010-10-07
TW200921763A (en) 2009-05-16
US20110250739A1 (en) 2011-10-13
WO2009006183A2 (en) 2009-01-08
WO2009006183A3 (en) 2009-02-26
CN101689487B (zh) 2011-12-28
US20090004458A1 (en) 2009-01-01
US20090252974A1 (en) 2009-10-08

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