TWI629384B - Fz矽以及製備fz矽的方法 - Google Patents

Fz矽以及製備fz矽的方法 Download PDF

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TWI629384B
TWI629384B TW106104565A TW106104565A TWI629384B TW I629384 B TWI629384 B TW I629384B TW 106104565 A TW106104565 A TW 106104565A TW 106104565 A TW106104565 A TW 106104565A TW I629384 B TWI629384 B TW I629384B
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歐尹司 胡伯
安卓 藍茲
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世創電子材料公司
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Abstract

FZ矽，其中FZ矽顯示出在小於900 °C的處理溫度下任何處理步驟後其少數載流子壽命沒有降低。製備FZ矽的方法，包括在大於或等於900 °C的退火溫度下使FZ矽退火，和在小於900 °C 的處理溫度下處理退火的FZ矽。

Description

FZ矽以及製備FZ矽的方法
本發明涉及浮區提拉的單晶矽，以下稱為FZ矽，以及製備這種FZ矽的方法。
單晶矽在大部分實際情況中通過坩堝提拉法（稱為柴可斯基（Czochralski）法或CZ法）或通過無坩堝提拉法（稱為區熔法或FZ法）製備。直徑通常為100-450 mm的棒狀單晶主要作為製備晶圓的基本材料，由晶圓轉而製備電子元件或太陽能電池。
在CZ法中，半導體材料的熔體在石英坩堝中製備，並且晶種與熔體表面接觸並緩慢地從熔體中升起。單晶開始在晶種底側上生長。另一方面，太陽能應用會在經濟上受益於所謂的連續柴可斯基法，其中多個錠從坩堝抽取，在抽取過程期間坩堝用矽再裝填。
在FZ法中，多晶原料棒借助高頻線圈逐漸熔化。熔融的材料通過用單晶晶體播種並通過隨後的再結晶轉化成單晶。在再結晶期間，所得單晶的直徑首先成錐形增大（形成錐）直到達到所需的最終直徑（形成棒）。在形成錐階段，單晶也受到機械上支撐，以緩解薄籽晶上的負荷。FZ法的基礎也在例如US 6,840,998 B2中進行了描述。
FZ法的一種變體，下文稱作GFZ法，使用多晶顆粒狀矽代替進料棒。當FZ法使用一個感應加熱線圈用於熔化進料棒和用於單晶的受控結晶時，GFZ法使用兩個感應加熱線圈。多晶顆粒借助在片上的第一感應加熱線圈熔化並且隨後流經片中心中的孔至成長中的單晶並且形成熔融區。單晶的結晶借助佈置在第一感應加熱線圈下的第二感應加熱線圈控制。關於GFZ法的其他詳情例如在US 2011/0095018 A1中進行了描述。
通過CZ法生產的所有單晶矽包含在錠中低但是顯著水平的氧，通常為相對於矽為約20 ppma 的濃度(每百萬原子數的份數)。氧主要源於石英坩堝。在生長溫度下，大多數氧是填隙於晶格中，即單個氧原子存在於結晶矽晶格的間隙中。然而，一些氧以各種原子結構聚集在一起，也稱為簇或氧凝結核。
初始的簇和核稱為「生長（grown in）」缺陷。核和凝結物被視為晶格中的缺陷，其作為結晶固體中電子和空穴的複合中心或阱，由此降低少數載流子複合壽命。除去或消除這些氧缺陷增加了矽中少數載流子壽命。對於CZ矽，採用各種技術降低錠中氧濃度低於13 ppma，但是這些技術帶來操作限制，並且沒有完全成功。大多數現代IC具有在表面區域中約若干微米的原始晶圓表面內的有源半導體器件。已提出使矽晶圓經歷在氧氣環境中在大於1150 °C的溫度下在快速熱處理(RTP)室中的快速退火。這種高溫氧氣退火降低了空穴並且因此防止在用於IC的高溫處理期間表面區域附近的沉澱。
通過不使用石英坩堝的浮區(FZ)法生產的單晶矽即使有也沒有多少氧。FZ矽表現出由於缺少氧缺陷而導致的非常高的少數載流子壽命。
US 6,840,998 B2引用了通過無坩堝浮區提拉製備的單晶，其包含在至少為200 mm的長度上直徑至少為200 mm的單晶矽，並且在所述長度的區域中沒有位錯。
US 7,025,827 B2要求保護一種通過單晶的浮區提拉並將該單晶分開來生產摻雜的半導體晶圓的方法，其包括在浮區提拉期間將使用感應線圈生產的熔融材料用摻雜劑摻雜，將熔融的材料暴露至至少一個旋轉磁場；將熔融材料固化以產生單晶；旋轉在熔融材料固化期間形成的單晶；並且以相對的方向旋轉單晶和磁場，磁場具有400-700 Hz頻率。
中子遷變摻雜（Neutron Transmutation Doped ，NTD）矽具有任何已知結晶矽產物中最低的電阻率變化。中子遷變摻雜是半導體材料原子進入摻雜劑的原子核轉變，即通過將未摻雜的矽晶體暴露於核反應爐核心中熱中子的合適的焊劑而使矽原子進入磷摻雜劑中。這種技術的優勢在於製造通過常規摻雜法不能實現的極其均勻性的N-摻雜的矽的機會。不可避免的輻射產生的缺陷可以通過在從約500 °C 至半導體結晶材料的熔融溫度下的更高溫度範圍內的溫度下合適的加熱特定的時間長度而經過退火解決。退火對中子遷變產生的核沒有影響，但是通過晶體對稱性和順序而導致了輻射損傷缺陷的去除。這種恢復過程將電阻率恢復至對應於摻雜劑含量的水平。
US 4,135,951 A要求保護一種恢復中子摻雜的半導體材料的電阻率並通過退火增加所述材料的少數載流子壽命的方法，包括：加熱材料至約600 °C或更高的但在材料的熔融溫度以下的退火溫度四分之一小時至5小時或更長時間；並且將加熱的材料以從每分鐘¼ °C至約4 °C的冷卻速度從退火溫度冷卻至低於約300° C的環境溫度。
通常，FZ晶圓用於製造半導體器件，例如功率器件。
然而，更高效率的需要也推動光伏發展到對於半導體器件生產提供類似品質水平的標準半導體方法。由FZ材料製備的高效率矽太陽能電池具有最高的品質，並且正在勝過CZ單晶矽和多晶矽。
用於功率器件以及光伏應用的基板的關鍵參數如下： - 高少數載流子壽命 - 低氧含量 - 低電阻率變化 因此，少數載流子壽命是一個表徵FZ晶圓在上述領域中許多應用的適應性的關鍵參數。
FZ矽的「生長的（as grown）」或「提拉的（as pulled）」少數載流子壽命取決於電阻率並且其在從約100µs至大於6000 µs的範圍內。作為例子，在2 Ωcm下整體壽命超過1000 μs，並且在30 Ωcm下增加至4000 μs。
然而，少數載流子壽命也表現出對退火過程的強烈依賴性。在低於900°C的溫度下退火顯著降低所述「生長的」壽命。這是否在氧化或非氧化爐氣氛中發生並不重要。另一方面，在900°C以上的溫度下退火不降低壽命。
因此，本發明要解決的一個問題是避免所述「生長的」壽命的這種降低。
這個問題通過製備FZ矽的方法解決，其包括 a) 在大於或等於900 °C的退火溫度下使FZ矽退火 b) 在小於900 °C 的處理溫度下處理退火的FZ矽。
本發明也涉及FZ矽，其中所述FZ矽顯示出其少數載流子壽命在小於900 °C的處理溫度下的任何處理步驟後沒有降低。
如果FZ矽在大於或等於900 °C的退火溫度下退火，則FZ矽顯示出其少數載流子壽命在小於900 °C的處理溫度下的任何處理步驟後沒有降低。沒有這種退火步驟，則其少數載流子壽命在低溫處理步驟後會顯著降低。
在一個實施方式中，該製備FZ矽的方法包括由浮區提拉矽錠以機械法形成多個FZ矽晶圓的步驟，其中至少一個FZ晶圓在大於或等於900 °C的退火溫度下退火，並且之後在小於900 °C的處理溫度下處理。
在進一步的實施方式中，浮區提拉的矽錠在大於或等於900 °C的退火溫度下退火。在由退火的浮區提拉的矽錠以機械法形成多個退火的FZ矽晶圓後，至少一個退火的FZ晶圓在小於900 °C的處理溫度下處理。
在小於900 °C的處理溫度下處理退火的FZ矽的一個實例是將多晶矽層沉積在晶圓上。這種多沉積通常在約650 °C進行。沒有在900 °C或更高的高溫度退火，這種具有多層的晶圓的壽命會降低。
本發明的發明人也顯示了在900 °C或更高下退火可以重新設置樣品的最初高壽命，所述樣品的高壽命已被先前的低於900 °C的熱處理降低。
已經歷這種高溫退火步驟的FZ矽廣泛地保留著對後續較低溫度下退火步驟免疫。因此，它們的壽命不再顯著降低。
為了理解這些缺陷的起源，已經進行了DLTS研究。取決於退火溫度，可以觀察若干深水平的形成或消除。在退火期間這些峰的出現和除去與壽命降低特性相關。
在本發明的一個實施方式中，製備了直徑為75 mm、125 mm、150 mm或200 mm的FZ晶圓。
在另一個實施方式中，FZ晶圓是氮共摻雜的以抑制在提拉晶體期間晶體缺陷的產生。通過低水平的氮摻雜（約1014 cm-3 ）可以同時抑制空穴和Si填隙缺陷。這帶來了幾乎完美的柵氧化物完整性（gate oxide integrity，GOI）品質。
在另一個實施方式中，FZ晶圓的徑向電阻率變化是12%或以下，更優選8%或以下。這已經通過在FZ矽生長期間條紋（striation）的控制實現。
本發明的FZ矽包含溶解在矽晶格中的低水平的氧，優選少於1 ppma的氧。
在一個實施方式中，FZ晶圓包含n-型或p-型摻雜劑。
在另一個實施方式中，FZ矽使用GFZ方法由多晶顆粒狀矽生長。
根據本發明的FZ矽適用於作為半導體器件特別是包括功率MOSFET、IGBT（絕緣柵雙極電晶體）、柵流電晶體和二極體的功率器件的基材。
根據本發明的FZ矽也適用作為高效率太陽能電池的基材。
與根據本發明的製備FZ矽的方法的上述實施方式中有關的指定的特徵可以相應地應用於根據本發明的FZ矽。此外，與根據本發明的製備FZ矽的方法的實施方式中有關的指定的特徵因此可以與根據本發明製備FZ矽的方法的實施方式有關。本發明的指定的實施方式的這些特徵以及其他特徵在申請專利範圍以及說明書中進行了描述。各個特徵可以作為本發明的實施方式單獨或組合應用，或者可以在其他應用領域應用。而且，它們可以代表有利的實施方式，其在本申請中得到保護或在本申請和/或繼續申請的未決期間得到保護。
根據本發明的示例實施方式的詳細說明
提拉FZ晶體。選擇拉晶桿（puller）中的氮水平以在最終晶體中以在若干1014 cm-3 的範圍中結束。為了檢查氮的作用，在拉晶桿中不添加氮的情況下提拉一些晶體。
我們使用了厚度為1 mm +/- 500 µm各種晶圓。晶圓直徑沒有起重要作用，我們可以觀察到從75mm至200mm直徑的所描述的作用。
壽命使用Semilab的µPCD工具測量。
使用碘-乙醇鈍化來抑制表面複合，因此暴露真實的整體壽命性質。使用這種測量設置中等摻雜的FZ晶圓通常達到＞ 3ms的壽命。
退火在水平或垂直爐中氧化氣氛下進行。維持時間保持1h，使用標準升溫速率。
第1圖顯示出具有多背側且在不同的退火步驟後的提拉的n-摻雜的 FZ 200 mm晶圓的壽命。如前所述，在約650 °C 的溫度進行多沉積。因此，存在壽命降低。
對於在沒有任何熱處理情況下提拉的晶圓，壽命為約3500 µs。對於具有多背側的晶圓，壽命下降到約100-200 µs。在900 °C或以上的退火步驟後，所述「提拉的」壽命或多或少是重新設置的。如果晶圓已經經歷了在900 °C或以上的預退火，則在650 °C 的多沉積對壽命沒有影響。
因此，結果概括如下： 在900 °C以下溫度退火降低所述「成長」的壽命。是否這是在氧化或非氧化爐氣氛中發生無關緊要。 在900 °C或更高的溫度退火沒有降低壽命。 在900 °C或更高的溫度下退火可以重新設置樣品的已被先前低於900 °C的熱處理降低的最初高壽命。 已經歷這種高溫退火步驟（900 °C或更高的溫度）的樣品廣泛地保留著對後續在低於900 °C的較低溫度的退火步驟免疫。它們的壽命不再顯著降低。
這些樣品的後續DLTS（深水平瞬態譜，Deep-level transient spectroscopy）測量顯示出特徵缺陷水平。
第2圖顯示出測量的DLTS缺陷濃度。
結果概括如下： 在900 °C以下的退火在205 K和127K產生水平 在900 °C或以上的退火「消除」這些缺陷水平
因為在退火期間這些缺陷水平的出現和除去與壽命特性很好相關，所以缺陷水平被認為是壽命影響的根本原因。不希望受到理論束縛，空穴和氮會對這些缺陷水平起作用。
優選實施方式的上述描述已經通過實例給出。根據所公開的內容，本領域技術人員將不僅理解本發明及其優點，而且將發現對所公開的結構和方法的各種改變和改動。申請人因此尋求涵蓋由申請專利範圍所限定的在本發明的精神和範圍內所有這種改變和改動及其等價物。
無
第1圖顯示出具有多背側且在不同的退火步驟後的提拉的n-摻雜的 FZ 200 mm晶圓的壽命。
第2圖顯示出測量的DLTS缺陷濃度。

Claims (14)

  1. 一種製備FZ矽的方法，包括 在大於或等於900 °C的退火溫度下使FZ矽退火，和 在小於900 °C 的處理溫度下處理退火的FZ矽。
  2. 如請求項1的方法，包括由FZ提拉的錠以機械法形成多個FZ矽晶圓。
  3. 如請求項1或2的方法，在大於或等於900 °C的退火溫度下使FZ提拉的錠退火。
  4. 如請求項1或2的方法，包括在含氧環境中使FZ矽退火。
  5. 如請求項1或2的方法，在小於900 °C的處理溫度下處理至少一個由FZ矽形成的FZ晶圓。
  6. 如請求項1或2的方法，其中所述退火步驟在快速熱處理室中進行。
  7. 如請求項1或2的方法，其中在小於900 °C的處理溫度下對退火的FZ矽的處理包括將多晶矽沉積在FZ晶圓表面上的步驟。
  8. 如請求項1或2的方法，其中FZ矽用氮摻雜。
  9. 一種FZ矽，其中所述FZ矽顯示出在小於900 °C的處理溫度下任何處理步驟後其少數載流子壽命沒有降低。
  10. 如請求項9的FZ矽，用氮摻雜。
  11. 如請求項9或10的FZ矽，包括直徑為75 mm、125 mm、150 mm或200 mm的晶圓。
  12. 如請求項11的FZ矽，其中所述晶圓含有多晶矽表面層。
  13. 一種如請求項9至12中任一項的FZ矽的用途，其用於製備半導體器件。
  14. 一種如請求項9-12中任一項的FZ矽的用途，其用於製備高效太陽能電池。
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