JP2010502542A5 - - Google Patents
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- Publication number
- JP2010502542A5 JP2010502542A5 JP2009526595A JP2009526595A JP2010502542A5 JP 2010502542 A5 JP2010502542 A5 JP 2010502542A5 JP 2009526595 A JP2009526595 A JP 2009526595A JP 2009526595 A JP2009526595 A JP 2009526595A JP 2010502542 A5 JP2010502542 A5 JP 2010502542A5
- Authority
- JP
- Japan
- Prior art keywords
- gas stream
- vent gas
- trichlorosilane
- hydrogen
- fluidized bed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 15
- 239000007789 gas Substances 0.000 claims 14
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N Trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims 8
- 239000005052 trichlorosilane Substances 0.000 claims 8
- 239000001257 hydrogen Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 7
- FDNAPBUWERUEDA-UHFFFAOYSA-N Silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims 5
- 150000002431 hydrogen Chemical class 0.000 claims 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N Chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 3
- 239000005046 Chlorosilane Substances 0.000 claims 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 3
- 239000011863 silicon-based powder Substances 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000005049 silicon tetrachloride Substances 0.000 claims 2
- 238000011084 recovery Methods 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 230000001502 supplementation Effects 0.000 claims 1
Claims (14)
- １）１つ以上のシーメンス反応器から１つ以上の流動床反応器にベントガス流を供給することを含むプロセス。
- 前記ベントガス流に追加のクロロシランを補充することをさらに含む請求項１に記載のプロセス。
- 前記ベントガス流が、トリクロロシラン、四塩化ケイ素、水素、塩化水素及びシリコン粉末を含み、且つ前記プロセスが、前記ベントガス流を前記流動床反応器に供給する前に該ベントガス流からシリコン粉末を取り出すことをさらに含む請求項１に記載のプロセス。
- 前記ベントガス流に追加のトリクロロシランを任意で補充し、前記流動床反応器への供給ガス流を形成し、且つ該流動床反応器への該供給ガス流が、２０ｍｏｌ％〜５０ｍｏｌ％の濃度のクロロシランを含む請求項１に記載のプロセス。
- ｉ）処理工程を介在することなく、複数のシーメンス反応器から１つ以上の流動床反応器にベントガス流を直接供給することを含むプロセス。
- 前記ベントガス流が水素とクロロシランとを含む請求項１又は５に記載のプロセス。
- 前記ベントガス流が水素とシランとを含む請求項１又は５に記載のプロセス。
- 前記シーメンス反応器によって生成されるシリコンを、集積回路、太陽電池又はその両方のために用いることをさらに含む請求項１又は５に記載のプロセス。
- 前記流動床反応器によって生成されるシリコンを、太陽電池のために用いることをさらに含む請求項１又は５に記載のプロセス。
- 前記ベントガス流が、トリクロロシラン、四塩化ケイ素、水素、塩化水素及びシリコン粉末を含む請求項６に記載のプロセス。
- ｉｉ）前記流動床反応器から回収系に第２のベントガス流を供給することをさらに含む請求項６に記載のプロセス。
- 前記第２のベントガス流が、水素、トリクロロシラン、テトラクロロシラン及び塩化水素を含む請求項１１に記載のプロセス。
- ｉｉｉ）水素、トリクロロシラン又はその両方を回収し、該水素、トリクロロシラン又はその両方を前記工程ｉ）の前記シーメンス反応器に供給することをさらに含む請求項１１に記載のプロセス。
- ｉｉｉ）テトラクロロシランを回収し、該テトラクロロシランをトリクロロシランに変換し、該トリクロロシランを前記工程ｉ）の前記シーメンス反応器に供給することをさらに含む請求項１１に記載のプロセス。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/512,853 US7935327B2 (en) | 2006-08-30 | 2006-08-30 | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
| US11/512,853 | 2006-08-30 | ||
| PCT/US2007/013905 WO2008027101A1 (en) | 2006-08-30 | 2007-06-14 | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010502542A JP2010502542A (ja) | 2010-01-28 |
| JP2010502542A5 true JP2010502542A5 (ja) | 2010-04-02 |
| JP5367573B2 JP5367573B2 (ja) | 2013-12-11 |
Family
ID=38820284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009526595A Expired - Fee Related JP5367573B2 (ja) | 2006-08-30 | 2007-06-14 | シーメンスタイププロセスに組み込まれた流動床反応器によるシリコンの製造 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US7935327B2 (ja) |
| EP (1) | EP2057095A1 (ja) |
| JP (1) | JP5367573B2 (ja) |
| KR (1) | KR101447494B1 (ja) |
| CN (1) | CN101541678A (ja) |
| AU (1) | AU2007290858B2 (ja) |
| CA (1) | CA2661985C (ja) |
| RU (1) | RU2428377C2 (ja) |
| UA (1) | UA95974C2 (ja) |
| WO (1) | WO2008027101A1 (ja) |
Families Citing this family (49)
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| US20090173080A1 (en) * | 2008-01-07 | 2009-07-09 | Paul Steven Wallace | Method and apparatus to facilitate substitute natural gas production |
| US8528343B2 (en) * | 2008-01-07 | 2013-09-10 | General Electric Company | Method and apparatus to facilitate substitute natural gas production |
| US20090173081A1 (en) * | 2008-01-07 | 2009-07-09 | Paul Steven Wallace | Method and apparatus to facilitate substitute natural gas production |
| DE102008000052A1 (de) * | 2008-01-14 | 2009-07-16 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
| MY169283A (en) | 2008-06-30 | 2019-03-21 | Corner Star Ltd | Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor walls |
| US20100061911A1 (en) * | 2008-08-04 | 2010-03-11 | Hariharan Alleppey V | METHOD TO CONVERT SILICON POWDER TO HIGH PURITY POLYSILICON THROUGH INTERMEDIATE SiF4 |
| CN101676203B (zh) | 2008-09-16 | 2015-06-10 | 储晞 | 生产高纯颗粒硅的方法 |
| US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
| WO2010074673A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for the production of chlorosilanes |
| WO2010074674A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for silicon refinement |
| US8168123B2 (en) * | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
| EP2421659A1 (en) | 2009-04-20 | 2012-02-29 | Ae Polysilicon Corporation | A reactor with silicide-coated metal surfaces |
| EP2421795A4 (en) * | 2009-04-20 | 2015-07-22 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | METHOD AND DEVICE FOR PREPARING HIGH-PURITY POLYSILICIDE |
| WO2010123869A1 (en) * | 2009-04-20 | 2010-10-28 | Ae Polysilicon Corporation | Methods and system for cooling a reaction effluent gas |
| CN102439421A (zh) | 2009-05-22 | 2012-05-02 | 陶氏康宁公司 | 使用拉曼光谱法定量测量气相工艺中间体 |
| JP5627703B2 (ja) * | 2009-11-18 | 2014-11-19 | アールイーシー シリコン インコーポレイテッド | 流動床反応器 |
| CN102686307A (zh) * | 2009-12-29 | 2012-09-19 | Memc电子材料有限公司 | 使用外围四氯化硅减少硅在反应器壁上的沉积的方法 |
| US8029756B1 (en) * | 2010-03-30 | 2011-10-04 | Peak Sun Sillcon Corporation | Closed-loop silicon production |
| CN102985364B (zh) * | 2010-06-16 | 2015-05-20 | 信越化学工业株式会社 | 钟罩清洁化方法、多晶硅的制造方法以及钟罩用干燥装置 |
| DE102010040293A1 (de) | 2010-09-06 | 2012-03-08 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
| US20120100061A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
| EP2630081B1 (en) * | 2010-10-22 | 2016-04-20 | MEMC Electronic Materials, Inc. | Production of polycrystalline silicon in closed-loop processes and systems |
| US8449848B2 (en) | 2010-10-22 | 2013-05-28 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems |
| KR101256007B1 (ko) * | 2010-11-15 | 2013-04-18 | 주식회사 케이씨씨 | 실리콘 나노입자를 포함하는 리튬이차전지용 음극활물질 및 이를 포함하는 리튬이차전지 |
| US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| CN102120577A (zh) * | 2011-03-24 | 2011-07-13 | 天津大学 | 一种多晶硅还原炉预升温系统及预升温方法 |
| EP2530052A1 (de) * | 2011-06-01 | 2012-12-05 | HEI Eco Technology | Verfahren zur Herstellung von Siliziumtetrachlorid und Verfahren zur Herstellung von Solarsilizium |
| CN103648631B (zh) | 2011-06-16 | 2017-02-15 | 赫姆洛克半导体公司 | 固体加工阀 |
| WO2013049325A1 (en) | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| WO2013049314A2 (en) | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| DE102011120210A1 (de) | 2011-12-05 | 2013-06-06 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zum Reinigen von Silicium |
| KR101281102B1 (ko) * | 2011-12-19 | 2013-07-02 | 한화케미칼 주식회사 | 폴리실리콘의 제조 방법 |
| MY171572A (en) | 2012-01-30 | 2019-10-21 | Hemlock Semiconductor Operations Llc | Method of repairing and/or protecting a surface in a reactor |
| US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
| US10105669B2 (en) | 2012-08-29 | 2018-10-23 | Hemlock Semiconductor Operations Llc | Tapered fluidized bed reactor and process for its use |
| US9587993B2 (en) | 2012-11-06 | 2017-03-07 | Rec Silicon Inc | Probe assembly for a fluid bed reactor |
| US9212421B2 (en) | 2013-07-10 | 2015-12-15 | Rec Silicon Inc | Method and apparatus to reduce contamination of particles in a fluidized bed reactor |
| WO2014100705A1 (en) * | 2012-12-21 | 2014-06-26 | Centrotherm Photovoltaics Usa, Inc. | Conserved off gas recovery systems and processes |
| DE102013206236A1 (de) | 2013-04-09 | 2014-10-09 | Wacker Chemie Ag | Gasverteiler für Siemens-Reaktor |
| DE102013209076A1 (de) * | 2013-05-16 | 2014-11-20 | Wacker Chemie Ag | Reaktor zur Herstellung von polykristallinem Silicium und Verfahren zur Entfernung eines Silicium enthaltenden Belags auf einem Bauteil eines solchen Reaktors |
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| US9446367B2 (en) | 2014-08-15 | 2016-09-20 | Rec Silicon Inc | Joint design for segmented silicon carbide liner in a fluidized bed reactor |
| US9662628B2 (en) | 2014-08-15 | 2017-05-30 | Rec Silicon Inc | Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor |
| US9238211B1 (en) | 2014-08-15 | 2016-01-19 | Rec Silicon Inc | Segmented silicon carbide liner |
| US20160348983A1 (en) * | 2015-05-28 | 2016-12-01 | Sunedison, Inc. | Heat exchange apparatus |
| CN105174265B (zh) * | 2015-08-25 | 2018-02-02 | 中国恩菲工程技术有限公司 | 回收系统及回收方法 |
| KR102096577B1 (ko) * | 2016-12-29 | 2020-04-02 | 한화솔루션 주식회사 | 폴리실리콘 제조 장치 |
| WO2018218055A1 (en) * | 2017-05-24 | 2018-11-29 | Garlock Sealing Technologies, Llc | Biaxial ptfe gasket material with high purity filler |
| EP4317062A1 (en) | 2022-08-02 | 2024-02-07 | Alexander Lygin | Optimized process for silicon deposition |
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-
2006
- 2006-08-30 US US11/512,853 patent/US7935327B2/en not_active Expired - Fee Related
-
2007
- 2007-06-14 WO PCT/US2007/013905 patent/WO2008027101A1/en active Application Filing
- 2007-06-14 RU RU2009111218/05A patent/RU2428377C2/ru not_active IP Right Cessation
- 2007-06-14 JP JP2009526595A patent/JP5367573B2/ja not_active Expired - Fee Related
- 2007-06-14 UA UAA200902925A patent/UA95974C2/ru unknown
- 2007-06-14 KR KR1020097006542A patent/KR101447494B1/ko not_active IP Right Cessation
- 2007-06-14 EP EP07809525A patent/EP2057095A1/en not_active Withdrawn
- 2007-06-14 CA CA2661985A patent/CA2661985C/en not_active Expired - Fee Related
- 2007-06-14 CN CNA200780032303XA patent/CN101541678A/zh active Pending
- 2007-06-14 AU AU2007290858A patent/AU2007290858B2/en not_active Ceased
-
2011
- 2011-03-21 US US13/052,407 patent/US8609058B2/en not_active Expired - Fee Related
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