UA95974C2 - Способ получения кремния (варианты) - Google Patents
Способ получения кремния (варианты)Info
- Publication number
- UA95974C2 UA95974C2 UAA200902925A UAA200902925A UA95974C2 UA 95974 C2 UA95974 C2 UA 95974C2 UA A200902925 A UAA200902925 A UA A200902925A UA A200902925 A UAA200902925 A UA A200902925A UA 95974 C2 UA95974 C2 UA 95974C2
- Authority
- UA
- Ukraine
- Prior art keywords
- variants
- producing silicon
- reactor
- fluidized bed
- siemens
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
Реактор с псевдоожиженным слоем и реактор Сименса используют для получения поликристаллического кремния. Способ включает подачу отходящего газа из реактора Сименса в качестве сырьевого газа в реактор с псевдоожиженным слоем.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/512,853 US7935327B2 (en) | 2006-08-30 | 2006-08-30 | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
Publications (1)
Publication Number | Publication Date |
---|---|
UA95974C2 true UA95974C2 (ru) | 2011-09-26 |
Family
ID=38820284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
UAA200902925A UA95974C2 (ru) | 2006-08-30 | 2007-06-14 | Способ получения кремния (варианты) |
Country Status (10)
Country | Link |
---|---|
US (2) | US7935327B2 (ru) |
EP (1) | EP2057095A1 (ru) |
JP (1) | JP5367573B2 (ru) |
KR (1) | KR101447494B1 (ru) |
CN (1) | CN101541678A (ru) |
AU (1) | AU2007290858B2 (ru) |
CA (1) | CA2661985C (ru) |
RU (1) | RU2428377C2 (ru) |
UA (1) | UA95974C2 (ru) |
WO (1) | WO2008027101A1 (ru) |
Families Citing this family (50)
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---|---|---|---|---|
US20090173080A1 (en) * | 2008-01-07 | 2009-07-09 | Paul Steven Wallace | Method and apparatus to facilitate substitute natural gas production |
US20090173081A1 (en) * | 2008-01-07 | 2009-07-09 | Paul Steven Wallace | Method and apparatus to facilitate substitute natural gas production |
US8528343B2 (en) * | 2008-01-07 | 2013-09-10 | General Electric Company | Method and apparatus to facilitate substitute natural gas production |
DE102008000052A1 (de) * | 2008-01-14 | 2009-07-16 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
EP2303448B1 (en) | 2008-06-30 | 2012-10-31 | MEMC Electronic Materials, Inc. | Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls |
US9067338B2 (en) * | 2008-08-04 | 2015-06-30 | Semlux Technologies, Inc. | Method to convert waste silicon to high purity silicon |
CN103058194B (zh) * | 2008-09-16 | 2015-02-25 | 储晞 | 生产高纯颗粒硅的反应器 |
US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
WO2010074673A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for the production of chlorosilanes |
WO2010074674A1 (en) * | 2008-12-23 | 2010-07-01 | Arise Technologies Corporation | Method and apparatus for silicon refinement |
US8168123B2 (en) * | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
WO2010123869A1 (en) * | 2009-04-20 | 2010-10-28 | Ae Polysilicon Corporation | Methods and system for cooling a reaction effluent gas |
TWI496936B (zh) | 2009-04-20 | 2015-08-21 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | 用於製造高純度多晶矽之方法及裝置 |
CN102438763B (zh) | 2009-04-20 | 2014-08-13 | 江苏中能硅业科技发展有限公司 | 具有包覆有硅化物的金属表面的反应器 |
CN102439421A (zh) | 2009-05-22 | 2012-05-02 | 陶氏康宁公司 | 使用拉曼光谱法定量测量气相工艺中间体 |
US9023425B2 (en) | 2009-11-18 | 2015-05-05 | Rec Silicon Inc | Fluid bed reactor |
JP2013515673A (ja) * | 2009-12-29 | 2013-05-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 分配器の周縁開口部に導かれた四塩化ケイ素を用いてリアクター壁上のケイ素付着物を低減する方法 |
US8029756B1 (en) * | 2010-03-30 | 2011-10-04 | Peak Sun Sillcon Corporation | Closed-loop silicon production |
CN102985364B (zh) * | 2010-06-16 | 2015-05-20 | 信越化学工业株式会社 | 钟罩清洁化方法、多晶硅的制造方法以及钟罩用干燥装置 |
DE102010040293A1 (de) | 2010-09-06 | 2012-03-08 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
US20120100061A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
WO2012054170A1 (en) * | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop processes and systems |
US8449848B2 (en) | 2010-10-22 | 2013-05-28 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems |
KR101256007B1 (ko) * | 2010-11-15 | 2013-04-18 | 주식회사 케이씨씨 | 실리콘 나노입자를 포함하는 리튬이차전지용 음극활물질 및 이를 포함하는 리튬이차전지 |
US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
CN102120577A (zh) * | 2011-03-24 | 2011-07-13 | 天津大学 | 一种多晶硅还原炉预升温系统及预升温方法 |
EP2530052A1 (de) * | 2011-06-01 | 2012-12-05 | HEI Eco Technology | Verfahren zur Herstellung von Siliziumtetrachlorid und Verfahren zur Herstellung von Solarsilizium |
WO2012174228A1 (en) | 2011-06-16 | 2012-12-20 | Hemlock Semiconductor Corporation | Solids processing valve |
KR102050114B1 (ko) | 2011-09-30 | 2019-11-28 | 코너 스타 리미티드 | 유동층 반응기에서의 실란의 열 분해에 의한 다결정 실리콘의 제조 |
CN103842070B (zh) | 2011-09-30 | 2017-07-21 | Memc电子材料有限公司 | 通过使硅烷在流化床反应器中热分解而制备多晶硅 |
DE102011120210A1 (de) | 2011-12-05 | 2013-06-06 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zum Reinigen von Silicium |
KR101281102B1 (ko) * | 2011-12-19 | 2013-07-02 | 한화케미칼 주식회사 | 폴리실리콘의 제조 방법 |
EP2809455B1 (en) | 2012-01-30 | 2018-04-04 | Hemlock Semiconductor Operations LLC | Method of repairing and/or protecting a surface in a reactor |
US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
JP6272867B2 (ja) | 2012-08-29 | 2018-01-31 | ヘムロック・セミコンダクター・オペレーションズ・エルエルシー | 先細り流動床反応器及びその使用のためのプロセス |
US9587993B2 (en) | 2012-11-06 | 2017-03-07 | Rec Silicon Inc | Probe assembly for a fluid bed reactor |
US9212421B2 (en) | 2013-07-10 | 2015-12-15 | Rec Silicon Inc | Method and apparatus to reduce contamination of particles in a fluidized bed reactor |
WO2014100705A1 (en) * | 2012-12-21 | 2014-06-26 | Centrotherm Photovoltaics Usa, Inc. | Conserved off gas recovery systems and processes |
DE102013206236A1 (de) | 2013-04-09 | 2014-10-09 | Wacker Chemie Ag | Gasverteiler für Siemens-Reaktor |
DE102013209076A1 (de) | 2013-05-16 | 2014-11-20 | Wacker Chemie Ag | Reaktor zur Herstellung von polykristallinem Silicium und Verfahren zur Entfernung eines Silicium enthaltenden Belags auf einem Bauteil eines solchen Reaktors |
US9796594B2 (en) | 2013-12-10 | 2017-10-24 | Summit Process Design, Inc. | Process for producing trichlorosilane |
US9238211B1 (en) | 2014-08-15 | 2016-01-19 | Rec Silicon Inc | Segmented silicon carbide liner |
US9662628B2 (en) | 2014-08-15 | 2017-05-30 | Rec Silicon Inc | Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor |
US9446367B2 (en) | 2014-08-15 | 2016-09-20 | Rec Silicon Inc | Joint design for segmented silicon carbide liner in a fluidized bed reactor |
US20160348983A1 (en) * | 2015-05-28 | 2016-12-01 | Sunedison, Inc. | Heat exchange apparatus |
CN105174265B (zh) * | 2015-08-25 | 2018-02-02 | 中国恩菲工程技术有限公司 | 回收系统及回收方法 |
KR102096577B1 (ko) * | 2016-12-29 | 2020-04-02 | 한화솔루션 주식회사 | 폴리실리콘 제조 장치 |
US20180340052A1 (en) * | 2017-05-24 | 2018-11-29 | Garlock Sealing Technologies, Llc | Biaxial ptfe gasket material with high purity filler |
EP4317062A1 (en) | 2022-08-02 | 2024-02-07 | Alexander Lygin | Optimized process for silicon deposition |
WO2024124127A1 (en) * | 2022-12-09 | 2024-06-13 | Alliance For Sustainable Energy, Llc | Float-zone boule growth using gas precursors |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3011877A (en) | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
DE1155759B (de) | 1959-06-11 | 1963-10-17 | Siemens Ag | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke |
US3862020A (en) | 1970-12-07 | 1975-01-21 | Dow Corning | Production method for polycrystalline semiconductor bodies |
US3745043A (en) * | 1971-05-13 | 1973-07-10 | Union Carbide Corp | Manufacture of silicon metal from dichlorosilane |
US3961003A (en) | 1972-05-17 | 1976-06-01 | Dow Corning Corporation | Method and apparatus for making elongated Si and SiC structures |
GB2028289B (en) * | 1978-08-18 | 1982-09-02 | Schumacher Co J C | Producing silicon |
US4318942A (en) * | 1978-08-18 | 1982-03-09 | J. C. Schumacher Company | Process for producing polycrystalline silicon |
US4676967A (en) * | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
US4818495A (en) | 1982-11-05 | 1989-04-04 | Union Carbide Corporation | Reactor for fluidized bed silane decomposition |
US4491604A (en) * | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
US4481232A (en) * | 1983-05-27 | 1984-11-06 | The United States Of America As Represented By The Department Of Energy | Method and apparatus for producing high purity silicon |
US4559219A (en) | 1984-04-02 | 1985-12-17 | General Electric Company | Reducing powder formation in the production of high-purity silicon |
US4883687A (en) * | 1986-08-25 | 1989-11-28 | Ethyl Corporation | Fluid bed process for producing polysilicon |
US5037503A (en) | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
US5242671A (en) * | 1988-10-11 | 1993-09-07 | Ethyl Corporation | Process for preparing polysilicon with diminished hydrogen content by using a fluidized bed with a two-step heating process |
JPH02233514A (ja) | 1989-03-06 | 1990-09-17 | Osaka Titanium Co Ltd | 多結晶シリコンの製造方法 |
US5118486A (en) * | 1991-04-26 | 1992-06-02 | Hemlock Semiconductor Corporation | Separation by atomization of by-product stream into particulate silicon and silanes |
JPH0680412A (ja) * | 1992-08-31 | 1994-03-22 | Toagosei Chem Ind Co Ltd | 多結晶シリコンの製造方法 |
KR100210261B1 (ko) * | 1997-03-13 | 1999-07-15 | 이서봉 | 발열반응을 이용한 다결정 실리콘의 제조 방법 |
US6060021A (en) * | 1997-05-07 | 2000-05-09 | Tokuyama Corporation | Method of storing trichlorosilane and silicon tetrachloride |
DE19735378A1 (de) * | 1997-08-14 | 1999-02-18 | Wacker Chemie Gmbh | Verfahren zur Herstellung von hochreinem Siliciumgranulat |
US7435392B2 (en) * | 2000-02-03 | 2008-10-14 | Acclavis, Llc | Scalable continuous production system |
US6368568B1 (en) * | 2000-02-18 | 2002-04-09 | Stephen M Lord | Method for improving the efficiency of a silicon purification process |
US20020187096A1 (en) | 2001-06-08 | 2002-12-12 | Kendig James Edward | Process for preparation of polycrystalline silicon |
US7033561B2 (en) * | 2001-06-08 | 2006-04-25 | Dow Corning Corporation | Process for preparation of polycrystalline silicon |
JP4831285B2 (ja) | 2004-04-30 | 2011-12-07 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法 |
JP4780271B2 (ja) | 2004-04-30 | 2011-09-28 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法 |
-
2006
- 2006-08-30 US US11/512,853 patent/US7935327B2/en not_active Expired - Fee Related
-
2007
- 2007-06-14 CN CNA200780032303XA patent/CN101541678A/zh active Pending
- 2007-06-14 AU AU2007290858A patent/AU2007290858B2/en not_active Ceased
- 2007-06-14 CA CA2661985A patent/CA2661985C/en not_active Expired - Fee Related
- 2007-06-14 WO PCT/US2007/013905 patent/WO2008027101A1/en active Application Filing
- 2007-06-14 RU RU2009111218/05A patent/RU2428377C2/ru not_active IP Right Cessation
- 2007-06-14 KR KR1020097006542A patent/KR101447494B1/ko not_active IP Right Cessation
- 2007-06-14 JP JP2009526595A patent/JP5367573B2/ja not_active Expired - Fee Related
- 2007-06-14 UA UAA200902925A patent/UA95974C2/ru unknown
- 2007-06-14 EP EP07809525A patent/EP2057095A1/en not_active Withdrawn
-
2011
- 2011-03-21 US US13/052,407 patent/US8609058B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
RU2009111218A (ru) | 2010-10-10 |
CA2661985A1 (en) | 2008-03-06 |
RU2428377C2 (ru) | 2011-09-10 |
WO2008027101A9 (en) | 2009-05-14 |
CA2661985C (en) | 2014-05-27 |
JP5367573B2 (ja) | 2013-12-11 |
AU2007290858B2 (en) | 2012-12-13 |
US20110189074A1 (en) | 2011-08-04 |
WO2008027101A1 (en) | 2008-03-06 |
KR101447494B1 (ko) | 2014-10-06 |
CN101541678A (zh) | 2009-09-23 |
JP2010502542A (ja) | 2010-01-28 |
KR20090064402A (ko) | 2009-06-18 |
EP2057095A1 (en) | 2009-05-13 |
US8609058B2 (en) | 2013-12-17 |
US20080056979A1 (en) | 2008-03-06 |
US7935327B2 (en) | 2011-05-03 |
AU2007290858A1 (en) | 2008-03-06 |
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