JP5367573B2 - シーメンスタイププロセスに組み込まれた流動床反応器によるシリコンの製造 - Google Patents
シーメンスタイププロセスに組み込まれた流動床反応器によるシリコンの製造 Download PDFInfo
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- JP5367573B2 JP5367573B2 JP2009526595A JP2009526595A JP5367573B2 JP 5367573 B2 JP5367573 B2 JP 5367573B2 JP 2009526595 A JP2009526595 A JP 2009526595A JP 2009526595 A JP2009526595 A JP 2009526595A JP 5367573 B2 JP5367573 B2 JP 5367573B2
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- gas stream
- fluidized bed
- vent gas
- siemens
- silicon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Description
本願は、米国特許法第120条に基づき、米国特許出願第11/512,853号(2006年8月30日出願)の利益を主張している。米国特許出願第11/512,853号は参照により本明細書に援用される。
本発明に用いられるシーメンス反応器は、米国特許第2,999,735号、同第3,011,877号、同第3,862,020号、又は同第3,961,003号に開示されているシーメンス反応器等の従来のシーメンス反応器であってよい。例えば、シーメンス反応器の操作は以下の通りに実施され得る。多結晶シリコンシードロッドをシーメンス反応器内に垂直で互いに平行となるように配置する。これらのシードロッドを2つ以上互いにブリッジにより連結することによって、U字ロッドを形成してもよい。700℃〜1400℃、代替的には1000℃〜1200℃、代替的には1100℃〜1150℃の範囲の温度に達するまでU字ロッドを加熱する。シーメンス反応器は、13kPa(2psig)〜3450kPa(500psig)、代替的には6kPa(1psig)〜1380kPa(200psig)、代替的には100kPa(1bar)〜690kPa(100psig)の範囲の圧力下で操作し得る。
本発明に用いられる流動床反応器は、米国特許第5,077,028号に開示されている流動床反応器等の従来の流動床反応器であってもよい。例えば、流動床反応器の操作は以下の通りに実施され得る。シリコンのシード粒子を流動床反応器内に配置し、流動化させる。シード粒子の供給源は当該技術分野において既知である。例えば、シード粒子は、顆粒状の多結晶シリコンの機械的磨耗によって、又はシーメンス反応器内で生成された多結晶シリコンを粉砕することによって得ることができる。床を流動化するのに用いられるガスは、シーメンス反応器からのベントガス流;水素、アルゴン、ヘリウム、窒素等の希釈ガス;又はこれらの組合せを含んでいてもよい。シリコンはシード粒子の表面上に析出してシード粒子の直径を増大させる。得られるビーズ状の生成物を流動床から取り出し、より多くのシード粒子を導入してもよい。
流動床反応器からのベントガス流は任意の従来の手段によって回収され得る。流動床反応器からのベントガス流は従来の設備を用いて冷却してもよい。微細なシリコン粉末は、接触型コンデンサ、焼結金属ブローバック濾過アセンブリ、又はサイクロンとフィルタアセンブリとの組合せ等の従来の設備を用いて除去してもよい。
Claims (16)
- 1)1つ以上のシーメンス反応器から1つ以上の流動床反応器にベントガス流を供給することを含む、多結晶シリコンの製造方法。
- 前記ベントガス流に追加のクロロシランを補充することをさらに含む請求項1に記載の方法。
- 前記ベントガス流が、トリクロロシラン、四塩化ケイ素、水素、塩化水素及びシリコン粉末を含み、且つ前記方法が、前記ベントガス流を前記流動床反応器に供給する前に該ベントガス流からシリコン粉末を取り出すことをさらに含む請求項1に記載の方法。
- 前記ベントガス流に追加のトリクロロシランを任意で補充し、前記流動床反応器への供給ガス流を形成し、且つ該流動床反応器への該供給ガス流が、20mol%〜50mol%の濃度のクロロシランを含む請求項1に記載の方法。
- i)処理工程を介在することなく、複数のシーメンス反応器から1つ以上の流動床反応器にベントガス流を直接供給することを含む、多結晶シリコンの製造方法。
- 前記ベントガス流が水素とクロロシランとを含む請求項1又は5に記載の方法。
- 前記ベントガス流が水素とシランとを含む請求項1又は5に記載の方法。
- 前記シーメンス反応器によって生成されるシリコンを、集積回路、太陽電池又はその両方のために用いることをさらに含む請求項1又は5に記載の方法。
- 前記流動床反応器によって生成されるシリコンを、太陽電池のために用いることをさらに含む請求項1又は5に記載の方法。
- 前記ベントガス流が、トリクロロシラン、四塩化ケイ素、水素、塩化水素及びシリコン粉末を含む請求項6に記載の方法。
- ii)前記流動床反応器から回収系に第2のベントガス流を供給することをさらに含む請求項6に記載の方法。
- 前記第2のベントガス流が、水素、トリクロロシラン、テトラクロロシラン及び塩化水素を含む請求項11に記載の方法。
- iii)水素、トリクロロシラン又はその両方を回収し、該水素、トリクロロシラン又はその両方を前記工程i)の前記シーメンス反応器に供給することをさらに含む請求項11に記載の方法。
- iii)テトラクロロシランを回収し、該テトラクロロシランをトリクロロシランに変換し、該トリクロロシランを前記工程i)の前記シーメンス反応器に供給することをさらに含む請求項11に記載の方法。
- 2つ以上の前記シーメンス反応器からのベントガスを組み合わせて、前記流動床反応器に供給されるベントガス流を形成する請求項1に記載の方法。
- 前記ベントガス流に四塩化ケイ素を補充して、前記流動床反応器への供給ガス流を形成する請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/512,853 US7935327B2 (en) | 2006-08-30 | 2006-08-30 | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
US11/512,853 | 2006-08-30 | ||
PCT/US2007/013905 WO2008027101A1 (en) | 2006-08-30 | 2007-06-14 | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010502542A JP2010502542A (ja) | 2010-01-28 |
JP2010502542A5 JP2010502542A5 (ja) | 2010-04-02 |
JP5367573B2 true JP5367573B2 (ja) | 2013-12-11 |
Family
ID=38820284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009526595A Expired - Fee Related JP5367573B2 (ja) | 2006-08-30 | 2007-06-14 | シーメンスタイププロセスに組み込まれた流動床反応器によるシリコンの製造 |
Country Status (10)
Country | Link |
---|---|
US (2) | US7935327B2 (ja) |
EP (1) | EP2057095A1 (ja) |
JP (1) | JP5367573B2 (ja) |
KR (1) | KR101447494B1 (ja) |
CN (1) | CN101541678A (ja) |
AU (1) | AU2007290858B2 (ja) |
CA (1) | CA2661985C (ja) |
RU (1) | RU2428377C2 (ja) |
UA (1) | UA95974C2 (ja) |
WO (1) | WO2008027101A1 (ja) |
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2006
- 2006-08-30 US US11/512,853 patent/US7935327B2/en not_active Expired - Fee Related
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2007
- 2007-06-14 WO PCT/US2007/013905 patent/WO2008027101A1/en active Application Filing
- 2007-06-14 AU AU2007290858A patent/AU2007290858B2/en not_active Ceased
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US8609058B2 (en) | 2013-12-17 |
CN101541678A (zh) | 2009-09-23 |
CA2661985C (en) | 2014-05-27 |
KR101447494B1 (ko) | 2014-10-06 |
UA95974C2 (ru) | 2011-09-26 |
US7935327B2 (en) | 2011-05-03 |
JP2010502542A (ja) | 2010-01-28 |
KR20090064402A (ko) | 2009-06-18 |
US20080056979A1 (en) | 2008-03-06 |
CA2661985A1 (en) | 2008-03-06 |
US20110189074A1 (en) | 2011-08-04 |
WO2008027101A1 (en) | 2008-03-06 |
AU2007290858A1 (en) | 2008-03-06 |
RU2009111218A (ru) | 2010-10-10 |
RU2428377C2 (ru) | 2011-09-10 |
WO2008027101A9 (en) | 2009-05-14 |
EP2057095A1 (en) | 2009-05-13 |
AU2007290858B2 (en) | 2012-12-13 |
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