WO2008146741A1 - トリクロロシランの製造方法と製造装置および多結晶シリコンの製造方法 - Google Patents

トリクロロシランの製造方法と製造装置および多結晶シリコンの製造方法 Download PDF

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Publication number
WO2008146741A1
WO2008146741A1 PCT/JP2008/059544 JP2008059544W WO2008146741A1 WO 2008146741 A1 WO2008146741 A1 WO 2008146741A1 JP 2008059544 W JP2008059544 W JP 2008059544W WO 2008146741 A1 WO2008146741 A1 WO 2008146741A1
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WO
WIPO (PCT)
Prior art keywords
producing
cooling
reaction
trichlorosilane
sec
Prior art date
Application number
PCT/JP2008/059544
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English (en)
French (fr)
Inventor
Wataru Saiki
Kazuki Mizushima
Makoto Urushihara
Original Assignee
Mitsubishi Materials Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corporation filed Critical Mitsubishi Materials Corporation
Priority to EP08764590.9A priority Critical patent/EP2154110B1/en
Priority to CN2008800173836A priority patent/CN101679045B/zh
Priority to US12/451,666 priority patent/US9994455B2/en
Publication of WO2008146741A1 publication Critical patent/WO2008146741A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

　このトリクロロシラン製造方法は、原料のテトラクロロシランと水素とを１０００°C以上１９００°C以下の第１温度範囲で転換反応させてトリクロロシラン、ジクロロシリレン、塩化水素、および高次シラン化合物を含む第１反応生成ガスを生成する転換反応工程（第１反応工程）と、上記第１反応生成ガスを１秒以内に９５０°C以下に冷却する第１冷却工程（０.０１秒以内に６００°C未満に冷却することを除く）と、６００°C以上９５０°C以下の第２温度範囲に０.０１秒以上５秒以下保持する第２反応工程と、第２反応工程後の第２反応生成ガスを６００°C未満に冷却する第２冷却工程を有する。
PCT/JP2008/059544 2007-05-25 2008-05-23 トリクロロシランの製造方法と製造装置および多結晶シリコンの製造方法 WO2008146741A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08764590.9A EP2154110B1 (en) 2007-05-25 2008-05-23 Process for producing trichlorosilane
CN2008800173836A CN101679045B (zh) 2007-05-25 2008-05-23 三氯硅烷的制备方法和制备装置以及多晶硅的制备方法
US12/451,666 US9994455B2 (en) 2007-05-25 2008-05-23 Apparatus and method for manufacturing trichlorosilane and method for manufacturing polycrystalline silicon

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007139111 2007-05-25
JP2007-139111 2007-05-25
JP2008-127143 2008-05-14
JP2008127143A JP5397580B2 (ja) 2007-05-25 2008-05-14 トリクロロシランの製造方法と製造装置および多結晶シリコンの製造方法

Publications (1)

Publication Number Publication Date
WO2008146741A1 true WO2008146741A1 (ja) 2008-12-04

Family

ID=40316832

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059544 WO2008146741A1 (ja) 2007-05-25 2008-05-23 トリクロロシランの製造方法と製造装置および多結晶シリコンの製造方法

Country Status (6)

Country Link
US (1) US9994455B2 (ja)
EP (1) EP2154110B1 (ja)
JP (1) JP5397580B2 (ja)
CN (1) CN101679045B (ja)
TW (1) TWI434805B (ja)
WO (1) WO2008146741A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101844769A (zh) * 2009-03-11 2010-09-29 三菱综合材料株式会社 三氯硅烷的制造装置和制造方法
US20120070361A1 (en) * 2009-03-30 2012-03-22 Denki Kagaku Kogyo Kabushiki Kaisha Method for collection of hexachlorodisilane and plant for the method
EP2746222A1 (de) 2012-12-19 2014-06-25 Wacker Chemie AG Verfahren zur Konvertierung von Siliciumtetrachlorid in Trichlorsilan
EP2394955A4 (en) * 2009-02-04 2015-08-26 Tokuyama Corp PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201031591A (en) * 2008-10-30 2010-09-01 Mitsubishi Materials Corp Process for production of trichlorosilane and method for use thereof
JP5333725B2 (ja) * 2008-10-30 2013-11-06 三菱マテリアル株式会社 トリクロロシランの製造方法および利用方法
JP5392488B2 (ja) * 2008-10-30 2014-01-22 三菱マテリアル株式会社 トリクロロシランの製造方法および用途
JP5374576B2 (ja) * 2009-03-06 2013-12-25 電気化学工業株式会社 トリクロロシラン冷却塔およびそれを用いたトリクロロシラン製造方法
WO2010116500A1 (ja) * 2009-04-08 2010-10-14 電気化学工業株式会社 トリクロロシラン冷却塔およびそれを用いたトリクロロシラン製造方法
DE102009037155B3 (de) * 2009-08-04 2010-11-04 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Trichlorsilan
DE102009056438B4 (de) 2009-12-02 2013-05-16 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Hexachlordisilan
JP5482265B2 (ja) * 2009-12-15 2014-05-07 三菱マテリアル株式会社 トリクロロシラン製造装置
DE102010000981A1 (de) * 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
JP5900224B2 (ja) * 2011-11-30 2016-04-06 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
EP2969948A1 (en) * 2013-03-13 2016-01-20 SiTec GmbH Temperature management in chlorination processes and systems related thereto

Citations (8)

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JPS4895396A (ja) * 1972-02-26 1973-12-07
JPS57156318A (en) * 1981-03-16 1982-09-27 Koujiyundo Silicon Kk Production of trichlorosilane
JPS6081010A (ja) * 1983-10-13 1985-05-09 Denki Kagaku Kogyo Kk トリクロルシランの製造法
JPS6163519A (ja) * 1984-09-04 1986-04-01 Denki Kagaku Kogyo Kk モノシラン製造法
JPS6221706A (ja) * 1985-07-22 1987-01-30 Nippon Steel Corp トリクロルシランを介する珪素または珪素化合物の循環的製造方法
JPH07232910A (ja) * 1994-01-28 1995-09-05 Hemlock Semiconductor Corp テトラクロロシランの水素添加法
WO2005102928A1 (de) * 2004-04-23 2005-11-03 Degussa Ag VERFAHREN ZUR HERSTELLUNG VON HSiCl3 DURCH KATALYTISCHE HYDRODEHALOGENIERUNG VON SiCl4
JP3781439B2 (ja) 1992-06-01 2006-05-31 ヘムロック・セミコンダクター・コーポレーション クロロシランおよび水素の反応器

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US4217334A (en) * 1972-02-26 1980-08-12 Deutsche Gold- Und Silber-Scheideanstalt Vormals Roessler Process for the production of chlorosilanes
DE3139705C2 (de) 1981-10-06 1983-11-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Aufarbeitung der bei der Siliciumabscheidung und der Siliciumtetrachlorid-Konvertierung anfallenden Restgase
DE3809784C1 (ja) * 1988-03-23 1989-07-13 Huels Ag, 4370 Marl, De
CN1222471C (zh) 2002-10-23 2005-10-12 同济大学 用三氯氢硅和四氯化硅混合源生产多晶硅的方法
DE102005005044A1 (de) * 2005-02-03 2006-08-10 Consortium für elektrochemische Industrie GmbH Verfahren zur Herstellung von Trichlorsilan mittels thermischer Hydrierung von Siliciumtetrachlorid
JP5601438B2 (ja) * 2006-11-07 2014-10-08 三菱マテリアル株式会社 トリクロロシランの製造方法およびトリクロロシラン製造装置
JP5488777B2 (ja) * 2006-11-30 2014-05-14 三菱マテリアル株式会社 トリクロロシランの製造方法およびトリクロロシランの製造装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4895396A (ja) * 1972-02-26 1973-12-07
JPS5738524B2 (ja) 1972-02-26 1982-08-16
JPS57156318A (en) * 1981-03-16 1982-09-27 Koujiyundo Silicon Kk Production of trichlorosilane
JPS6081010A (ja) * 1983-10-13 1985-05-09 Denki Kagaku Kogyo Kk トリクロルシランの製造法
JPS6163519A (ja) * 1984-09-04 1986-04-01 Denki Kagaku Kogyo Kk モノシラン製造法
JPS6221706A (ja) * 1985-07-22 1987-01-30 Nippon Steel Corp トリクロルシランを介する珪素または珪素化合物の循環的製造方法
JP3781439B2 (ja) 1992-06-01 2006-05-31 ヘムロック・セミコンダクター・コーポレーション クロロシランおよび水素の反応器
JPH07232910A (ja) * 1994-01-28 1995-09-05 Hemlock Semiconductor Corp テトラクロロシランの水素添加法
WO2005102928A1 (de) * 2004-04-23 2005-11-03 Degussa Ag VERFAHREN ZUR HERSTELLUNG VON HSiCl3 DURCH KATALYTISCHE HYDRODEHALOGENIERUNG VON SiCl4

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2154110A4 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2394955A4 (en) * 2009-02-04 2015-08-26 Tokuyama Corp PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON
CN101844769A (zh) * 2009-03-11 2010-09-29 三菱综合材料株式会社 三氯硅烷的制造装置和制造方法
EP2233436A1 (en) * 2009-03-11 2010-09-29 Mitsubishi Materials Corporation Apparatus and method for producing trichlorosilane
US8491862B2 (en) 2009-03-11 2013-07-23 Mitsubishi Materials Corporation Apparatus and method for producing trichlorosilane
CN101844769B (zh) * 2009-03-11 2013-11-06 三菱综合材料株式会社 三氯硅烷的制造装置和制造方法
US20120070361A1 (en) * 2009-03-30 2012-03-22 Denki Kagaku Kogyo Kabushiki Kaisha Method for collection of hexachlorodisilane and plant for the method
EP2746222A1 (de) 2012-12-19 2014-06-25 Wacker Chemie AG Verfahren zur Konvertierung von Siliciumtetrachlorid in Trichlorsilan
DE102012223784A1 (de) 2012-12-19 2014-06-26 Wacker Chemie Ag Verfahren zur Konvertierung von Siliciumtetrachlorid in Trichlorsilan
US9776878B2 (en) 2012-12-19 2017-10-03 Wacker Chemie Ag Process for converting silicon tetrachloride to trichlorosilane

Also Published As

Publication number Publication date
EP2154110A1 (en) 2010-02-17
US9994455B2 (en) 2018-06-12
JP5397580B2 (ja) 2014-01-22
TWI434805B (zh) 2014-04-21
EP2154110A4 (en) 2015-07-15
CN101679045A (zh) 2010-03-24
CN101679045B (zh) 2013-07-24
JP2009007240A (ja) 2009-01-15
TW200906723A (en) 2009-02-16
EP2154110B1 (en) 2019-04-03
US20100178230A1 (en) 2010-07-15

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