JP2010153864A - 半導体ダイ上に製造されるパワートランジスタデバイス - Google Patents

半導体ダイ上に製造されるパワートランジスタデバイス Download PDF

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Publication number
JP2010153864A
JP2010153864A JP2009287436A JP2009287436A JP2010153864A JP 2010153864 A JP2010153864 A JP 2010153864A JP 2009287436 A JP2009287436 A JP 2009287436A JP 2009287436 A JP2009287436 A JP 2009287436A JP 2010153864 A JP2010153864 A JP 2010153864A
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power transistor
transistor device
buffer layer
conductivity type
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Japanese (ja)
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JP2010153864A5 (enExample
Inventor
Vijay Parthasarathy
ビジェイ・パルササラシー
Sujit Banerjee
スジット・バナジー
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Power Integrations Inc
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Power Integrations Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009287436A 2008-12-23 2009-12-18 半導体ダイ上に製造されるパワートランジスタデバイス Pending JP2010153864A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/317,294 US8093621B2 (en) 2008-12-23 2008-12-23 VTS insulated gate bipolar transistor

Publications (2)

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JP2010153864A true JP2010153864A (ja) 2010-07-08
JP2010153864A5 JP2010153864A5 (enExample) 2013-02-07

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JP2009287436A Pending JP2010153864A (ja) 2008-12-23 2009-12-18 半導体ダイ上に製造されるパワートランジスタデバイス

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US (2) US8093621B2 (enExample)
EP (3) EP2202800A1 (enExample)
JP (1) JP2010153864A (enExample)
CN (1) CN101840919B (enExample)

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JP2012164916A (ja) * 2011-02-09 2012-08-30 Toshiba Corp 半導体装置およびその製造方法
JP2016039320A (ja) * 2014-08-08 2016-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2017168734A1 (ja) * 2016-03-31 2017-10-05 新電元工業株式会社 半導体装置の製造方法及び半導体装置
WO2017168733A1 (ja) * 2016-03-31 2017-10-05 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP2023502811A (ja) * 2020-10-20 2023-01-26 蘇州東微半導体股▲ふん▼有限公司 半導体パワーデバイスの製造方法

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US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US8115457B2 (en) 2009-07-31 2012-02-14 Power Integrations, Inc. Method and apparatus for implementing a power converter input terminal voltage discharge circuit
US8207577B2 (en) * 2009-09-29 2012-06-26 Power Integrations, Inc. High-voltage transistor structure with reduced gate capacitance
CN102792448B (zh) * 2010-03-09 2015-09-09 富士电机株式会社 半导体器件
US8525260B2 (en) * 2010-03-19 2013-09-03 Monolithic Power Systems, Inc. Super junction device with deep trench and implant
US9048104B2 (en) * 2010-07-12 2015-06-02 Microchip Technology Inc. Multi-chip package module and a doped polysilicon trench for isolation and connection
JP5631752B2 (ja) * 2011-01-12 2014-11-26 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP2013115225A (ja) * 2011-11-29 2013-06-10 Toshiba Corp 電力用半導体装置およびその製造方法
US9443972B2 (en) * 2011-11-30 2016-09-13 Infineon Technologies Austria Ag Semiconductor device with field electrode
CN103390650B (zh) * 2012-05-04 2017-08-08 朱江 一种具有无源金属肖特基半导体装置及其制备方法
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CN104241341A (zh) * 2012-07-27 2014-12-24 俞国庆 一种高频低功耗的功率mos场效应管器件
JP5802636B2 (ja) 2012-09-18 2015-10-28 株式会社東芝 半導体装置およびその製造方法
JP2014120656A (ja) * 2012-12-18 2014-06-30 Toshiba Corp 半導体装置
KR20150011185A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9111766B2 (en) 2013-09-24 2015-08-18 Infineon Technologies Austria Ag Transistor device with a field electrode
JP6566512B2 (ja) * 2014-04-15 2019-08-28 ローム株式会社 半導体装置および半導体装置の製造方法
US9570577B2 (en) 2014-05-12 2017-02-14 Infineon Technologies Ag Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
US9231091B2 (en) * 2014-05-12 2016-01-05 Infineon Technologies Ag Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
US9324823B2 (en) * 2014-08-15 2016-04-26 Infineon Technologies Austria Ag Semiconductor device having a tapered gate structure and method
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CN104716192B (zh) * 2015-03-31 2017-09-05 无锡新洁能股份有限公司 利用电荷耦合实现耐压的功率mos器件及其制备方法
CN105428241B (zh) * 2015-12-25 2018-04-17 上海华虹宏力半导体制造有限公司 具有屏蔽栅的沟槽栅功率器件的制造方法
JP6622611B2 (ja) * 2016-02-10 2019-12-18 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
CN105870180B (zh) * 2016-04-26 2018-08-24 电子科技大学 双分裂沟槽栅电荷存储型rc-igbt及其制造方法
CN105789291B (zh) * 2016-04-26 2018-06-19 电子科技大学 一种双分裂沟槽栅电荷存储型igbt及其制造方法
CN105742346B (zh) * 2016-04-26 2018-06-01 电子科技大学 双分裂沟槽栅电荷存储型rc-igbt及其制造方法
JP6909666B2 (ja) * 2017-07-27 2021-07-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN107425052A (zh) * 2017-07-28 2017-12-01 电子科技大学 一种横向高压器件
US10600897B2 (en) * 2017-11-08 2020-03-24 Fuji Electric Co., Ltd. Semiconductor device
JP2019096840A (ja) * 2017-11-28 2019-06-20 新電元工業株式会社 Ｍｏｓｆｅｔ及び電力変換回路
KR102246501B1 (ko) * 2017-12-29 2021-04-30 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 반도체 전력 소자
CN110620147B (zh) * 2018-09-14 2023-05-23 电子科技大学 超高速大电流纵向绝缘栅双极型晶体管
US11404540B2 (en) 2019-10-01 2022-08-02 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor
US11355585B2 (en) * 2019-10-01 2022-06-07 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor
CN113690294A (zh) * 2020-05-18 2021-11-23 华润微电子（重庆）有限公司 Igbt器件及其制备方法
CN114361248A (zh) * 2020-05-18 2022-04-15 华润微电子（重庆）有限公司 沟槽栅金属氧化物半导体场效应管及其制备方法
CN111785642B (zh) * 2020-08-26 2023-03-21 上海华虹宏力半导体制造有限公司 一种半导体器件的制造方法

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JP2012164916A (ja) * 2011-02-09 2012-08-30 Toshiba Corp 半導体装置およびその製造方法
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JP7313082B2 (ja) 2020-10-20 2023-07-24 蘇州東微半導体股▲ふん▼有限公司 半導体パワーデバイスの製造方法

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US20120061720A1 (en) 2012-03-15
EP2482322A2 (en) 2012-08-01
US8093621B2 (en) 2012-01-10
EP2482323A2 (en) 2012-08-01
EP2202800A1 (en) 2010-06-30
EP2482322A3 (en) 2013-01-02
CN101840919A (zh) 2010-09-22
EP2482323A3 (en) 2012-12-12
US8399907B2 (en) 2013-03-19
US20100155773A1 (en) 2010-06-24
CN101840919B (zh) 2013-08-07

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