JP2010153864A5 - - Google Patents

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Publication number
JP2010153864A5
JP2010153864A5 JP2009287436A JP2009287436A JP2010153864A5 JP 2010153864 A5 JP2010153864 A5 JP 2010153864A5 JP 2009287436 A JP2009287436 A JP 2009287436A JP 2009287436 A JP2009287436 A JP 2009287436A JP 2010153864 A5 JP2010153864 A5 JP 2010153864A5
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JP
Japan
Prior art keywords
region
power transistor
transistor device
conductivity type
buffer layer
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Pending
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JP2009287436A
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English (en)
Japanese (ja)
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JP2010153864A (ja
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Priority claimed from US12/317,294 external-priority patent/US8093621B2/en
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Publication of JP2010153864A publication Critical patent/JP2010153864A/ja
Publication of JP2010153864A5 publication Critical patent/JP2010153864A5/ja
Pending legal-status Critical Current

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JP2009287436A 2008-12-23 2009-12-18 半導体ダイ上に製造されるパワートランジスタデバイス Pending JP2010153864A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/317,294 US8093621B2 (en) 2008-12-23 2008-12-23 VTS insulated gate bipolar transistor

Publications (2)

Publication Number Publication Date
JP2010153864A JP2010153864A (ja) 2010-07-08
JP2010153864A5 true JP2010153864A5 (enExample) 2013-02-07

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JP2009287436A Pending JP2010153864A (ja) 2008-12-23 2009-12-18 半導体ダイ上に製造されるパワートランジスタデバイス

Country Status (4)

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US (2) US8093621B2 (enExample)
EP (3) EP2202800A1 (enExample)
JP (1) JP2010153864A (enExample)
CN (1) CN101840919B (enExample)

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