JP2010147475A5 - - Google Patents

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Publication number
JP2010147475A5
JP2010147475A5 JP2009286298A JP2009286298A JP2010147475A5 JP 2010147475 A5 JP2010147475 A5 JP 2010147475A5 JP 2009286298 A JP2009286298 A JP 2009286298A JP 2009286298 A JP2009286298 A JP 2009286298A JP 2010147475 A5 JP2010147475 A5 JP 2010147475A5
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JP
Japan
Prior art keywords
region
power transistor
transistor device
conductivity type
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009286298A
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English (en)
Japanese (ja)
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JP2010147475A (ja
Filing date
Publication date
Priority claimed from US12/317,307 external-priority patent/US20100155831A1/en
Application filed filed Critical
Publication of JP2010147475A publication Critical patent/JP2010147475A/ja
Publication of JP2010147475A5 publication Critical patent/JP2010147475A5/ja
Pending legal-status Critical Current

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JP2009286298A 2008-12-20 2009-12-17 半導体ダイ上に製造されるパワートランジスタデバイス Pending JP2010147475A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/317,307 US20100155831A1 (en) 2008-12-20 2008-12-20 Deep trench insulated gate bipolar transistor

Publications (2)

Publication Number Publication Date
JP2010147475A JP2010147475A (ja) 2010-07-01
JP2010147475A5 true JP2010147475A5 (enExample) 2013-02-07

Family

ID=41800656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009286298A Pending JP2010147475A (ja) 2008-12-20 2009-12-17 半導体ダイ上に製造されるパワートランジスタデバイス

Country Status (4)

Country Link
US (1) US20100155831A1 (enExample)
EP (3) EP2482325A3 (enExample)
JP (1) JP2010147475A (enExample)
CN (1) CN101789431A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5400405B2 (ja) * 2009-02-05 2014-01-29 株式会社東芝 半導体装置の製造方法
TWI402985B (zh) * 2009-06-02 2013-07-21 Anpec Electronics Corp 絕緣閘雙極電晶體與二極體之整合結構及其製作方法
JP5874723B2 (ja) * 2011-05-18 2016-03-02 富士電機株式会社 半導体装置および半導体装置の製造方法
GB201112327D0 (en) * 2011-07-18 2011-08-31 Epigan Nv Method for growing III-V epitaxial layers
CN103137688B (zh) * 2011-11-25 2017-05-17 盛况 一种沟槽mos结构半导体装置及其制造方法
US8653600B2 (en) * 2012-06-01 2014-02-18 Power Integrations, Inc. High-voltage monolithic schottky device structure
CN103633138A (zh) * 2012-08-21 2014-03-12 朱江 一种底部隔离电荷补偿结构半导体晶片及其制备方法
US9224854B2 (en) * 2013-10-03 2015-12-29 Texas Instruments Incorporated Trench gate trench field plate vertical MOSFET
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
KR102246501B1 (ko) * 2017-12-29 2021-04-30 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 반도체 전력 소자
JP7091714B2 (ja) * 2018-03-01 2022-06-28 株式会社デンソー 半導体装置
DE102018123439B4 (de) * 2018-09-24 2020-04-23 Infineon Technologies Ag Leistungshalbleitertransistor, Verfahren zum Verarbeiten eines Leistungshalbleitertransistors und Verfahren zum Produzieren eines Leistungshalbleitertransistors
JP7164497B2 (ja) 2019-08-23 2022-11-01 株式会社東芝 半導体装置

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor
US20020074585A1 (en) * 1988-05-17 2002-06-20 Advanced Power Technology, Inc., Delaware Corporation Self-aligned power MOSFET with enhanced base region
US5008794A (en) * 1989-12-21 1991-04-16 Power Integrations, Inc. Regulated flyback converter with spike suppressing coupled inductors
JP2635828B2 (ja) * 1991-01-09 1997-07-30 株式会社東芝 半導体装置
US5072268A (en) * 1991-03-12 1991-12-10 Power Integrations, Inc. MOS gated bipolar transistor
US5164891A (en) * 1991-08-21 1992-11-17 Power Integrations, Inc. Low noise voltage regulator and method using a gated single ended oscillator
US5258636A (en) * 1991-12-12 1993-11-02 Power Integrations, Inc. Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes
US5285367A (en) * 1992-02-07 1994-02-08 Power Integrations, Inc. Linear load circuit to control switching power supplies under minimum load conditions
US5323044A (en) * 1992-10-02 1994-06-21 Power Integrations, Inc. Bi-directional MOSFET switch
US5274259A (en) * 1993-02-01 1993-12-28 Power Integrations, Inc. High voltage transistor
US5313082A (en) * 1993-02-16 1994-05-17 Power Integrations, Inc. High voltage MOS transistor with a low on-resistance
US6168983B1 (en) * 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6800903B2 (en) * 1996-11-05 2004-10-05 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
DE19854915C2 (de) * 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
US6084277A (en) * 1999-02-18 2000-07-04 Power Integrations, Inc. Lateral power MOSFET with improved gate design
US6468847B1 (en) * 2000-11-27 2002-10-22 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6768171B2 (en) * 2000-11-27 2004-07-27 Power Integrations, Inc. High-voltage transistor with JFET conduction channels
US6509220B2 (en) * 2000-11-27 2003-01-21 Power Integrations, Inc. Method of fabricating a high-voltage transistor
US6424007B1 (en) * 2001-01-24 2002-07-23 Power Integrations, Inc. High-voltage transistor with buried conduction layer
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
JP2002305304A (ja) * 2001-04-05 2002-10-18 Toshiba Corp 電力用半導体装置
US6657256B2 (en) * 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
US6683344B2 (en) * 2001-09-07 2004-01-27 Ixys Corporation Rugged and fast power MOSFET and IGBT
US7221011B2 (en) * 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
US6555873B2 (en) * 2001-09-07 2003-04-29 Power Integrations, Inc. High-voltage lateral transistor with a multi-layered extended drain structure
US6635544B2 (en) * 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US7786533B2 (en) * 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US6555883B1 (en) * 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6552597B1 (en) * 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US6777747B2 (en) * 2002-01-18 2004-08-17 Fairchild Semiconductor Corporation Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability
US6583663B1 (en) * 2002-04-22 2003-06-24 Power Integrations, Inc. Power integrated circuit with distributed gate driver
US7638841B2 (en) * 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6865093B2 (en) * 2003-05-27 2005-03-08 Power Integrations, Inc. Electronic circuit control element with tap element
EP1536480A1 (en) * 2003-11-28 2005-06-01 STMicroelectronics S.r.l. Semiconductor power device with insulated gate, trenchgate structure and corresponding manufacturing method
JP2005340626A (ja) * 2004-05-28 2005-12-08 Toshiba Corp 半導体装置
US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7436039B2 (en) * 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
JP4817827B2 (ja) * 2005-12-09 2011-11-16 株式会社東芝 半導体装置
DE102006004405B4 (de) * 2006-01-31 2015-05-13 Infineon Technologies Austria Ag Leistungshalbleiterbauelemente mit einer Driftstrecke und einer hochdielektrischen Kompensationszone und Verfahren zur Herstellung einer Kompensationszone
DE102006025218B4 (de) * 2006-05-29 2009-02-19 Infineon Technologies Austria Ag Leistungshalbleiterbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben
US7381618B2 (en) * 2006-10-03 2008-06-03 Power Integrations, Inc. Gate etch process for a high-voltage FET
US8093621B2 (en) * 2008-12-23 2012-01-10 Power Integrations, Inc. VTS insulated gate bipolar transistor
JP5200373B2 (ja) * 2006-12-15 2013-06-05 トヨタ自動車株式会社 半導体装置
KR20090116702A (ko) * 2007-01-09 2009-11-11 맥스파워 세미컨덕터 인크. 반도체 디바이스
US7468536B2 (en) * 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US8653583B2 (en) * 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7859037B2 (en) * 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7875962B2 (en) * 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
US7964912B2 (en) * 2008-09-18 2011-06-21 Power Integrations, Inc. High-voltage vertical transistor with a varied width silicon pillar
US7871882B2 (en) * 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
US7893754B1 (en) * 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit

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