CN101789431A - 深沟槽绝缘栅极双极晶体管 - Google Patents

深沟槽绝缘栅极双极晶体管 Download PDF

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Publication number
CN101789431A
CN101789431A CN200910261915A CN200910261915A CN101789431A CN 101789431 A CN101789431 A CN 101789431A CN 200910261915 A CN200910261915 A CN 200910261915A CN 200910261915 A CN200910261915 A CN 200910261915A CN 101789431 A CN101789431 A CN 101789431A
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CN
China
Prior art keywords
power transistor
transistor device
area
drift region
resilient coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910261915A
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English (en)
Chinese (zh)
Inventor
维杰伊·帕塔萨拉蒂
苏吉特·巴纳吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
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Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of CN101789431A publication Critical patent/CN101789431A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN200910261915A 2008-12-20 2009-12-21 深沟槽绝缘栅极双极晶体管 Pending CN101789431A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/317,307 US20100155831A1 (en) 2008-12-20 2008-12-20 Deep trench insulated gate bipolar transistor
US12/317,307 2008-12-20

Publications (1)

Publication Number Publication Date
CN101789431A true CN101789431A (zh) 2010-07-28

Family

ID=41800656

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910261915A Pending CN101789431A (zh) 2008-12-20 2009-12-21 深沟槽绝缘栅极双极晶体管

Country Status (4)

Country Link
US (1) US20100155831A1 (enExample)
EP (3) EP2200087A1 (enExample)
JP (1) JP2010147475A (enExample)
CN (1) CN101789431A (enExample)

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CN103534811A (zh) * 2011-05-18 2014-01-22 富士电机株式会社 半导体装置及半导体装置的制造方法
CN103765592A (zh) * 2011-07-18 2014-04-30 埃皮根股份有限公司 用于生长iii-v外延层的方法
CN110223980A (zh) * 2018-03-01 2019-09-10 丰田自动车株式会社 半导体装置

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CN103137688B (zh) * 2011-11-25 2017-05-17 盛况 一种沟槽mos结构半导体装置及其制造方法
US8653600B2 (en) * 2012-06-01 2014-02-18 Power Integrations, Inc. High-voltage monolithic schottky device structure
CN103633138A (zh) * 2012-08-21 2014-03-12 朱江 一种底部隔离电荷补偿结构半导体晶片及其制备方法
US9224854B2 (en) * 2013-10-03 2015-12-29 Texas Instruments Incorporated Trench gate trench field plate vertical MOSFET
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
JP6990890B2 (ja) * 2017-12-29 2022-01-12 蘇州東微半導体股▲ふん▼有限公司 半導体パワーデバイス
DE102018123439B4 (de) * 2018-09-24 2020-04-23 Infineon Technologies Ag Leistungshalbleitertransistor, Verfahren zum Verarbeiten eines Leistungshalbleitertransistors und Verfahren zum Produzieren eines Leistungshalbleitertransistors
JP7164497B2 (ja) 2019-08-23 2022-11-01 株式会社東芝 半導体装置

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103534811A (zh) * 2011-05-18 2014-01-22 富士电机株式会社 半导体装置及半导体装置的制造方法
CN103534811B (zh) * 2011-05-18 2016-09-21 富士电机株式会社 半导体装置及半导体装置的制造方法
CN103765592A (zh) * 2011-07-18 2014-04-30 埃皮根股份有限公司 用于生长iii-v外延层的方法
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CN110223980A (zh) * 2018-03-01 2019-09-10 丰田自动车株式会社 半导体装置

Also Published As

Publication number Publication date
EP2482324A2 (en) 2012-08-01
EP2482324A3 (en) 2013-12-04
US20100155831A1 (en) 2010-06-24
EP2200087A1 (en) 2010-06-23
EP2482325A3 (en) 2013-12-04
EP2482325A2 (en) 2012-08-01
JP2010147475A (ja) 2010-07-01

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Application publication date: 20100728