JP2010147475A - 半導体ダイ上に製造されるパワートランジスタデバイス - Google Patents

半導体ダイ上に製造されるパワートランジスタデバイス Download PDF

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Publication number
JP2010147475A
JP2010147475A JP2009286298A JP2009286298A JP2010147475A JP 2010147475 A JP2010147475 A JP 2010147475A JP 2009286298 A JP2009286298 A JP 2009286298A JP 2009286298 A JP2009286298 A JP 2009286298A JP 2010147475 A JP2010147475 A JP 2010147475A
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Japan
Prior art keywords
region
power transistor
transistor device
substrate
buffer layer
Prior art date
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Pending
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JP2009286298A
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English (en)
Japanese (ja)
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JP2010147475A5 (enExample
Inventor
Vijay Parthasarathy
ビジェイ・パルササラシー
Sujit Banerjee
スジット・バナジー
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Power Integrations Inc
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Power Integrations Inc
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Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of JP2010147475A publication Critical patent/JP2010147475A/ja
Publication of JP2010147475A5 publication Critical patent/JP2010147475A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2009286298A 2008-12-20 2009-12-17 半導体ダイ上に製造されるパワートランジスタデバイス Pending JP2010147475A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/317,307 US20100155831A1 (en) 2008-12-20 2008-12-20 Deep trench insulated gate bipolar transistor

Publications (2)

Publication Number Publication Date
JP2010147475A true JP2010147475A (ja) 2010-07-01
JP2010147475A5 JP2010147475A5 (enExample) 2013-02-07

Family

ID=41800656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009286298A Pending JP2010147475A (ja) 2008-12-20 2009-12-17 半導体ダイ上に製造されるパワートランジスタデバイス

Country Status (4)

Country Link
US (1) US20100155831A1 (enExample)
EP (3) EP2482325A3 (enExample)
JP (1) JP2010147475A (enExample)
CN (1) CN101789431A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133411B2 (en) 2019-08-23 2021-09-28 Kabushiki Kaisha Toshiba Semiconductor device with reduced on-resistance

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11133411B2 (en) 2019-08-23 2021-09-28 Kabushiki Kaisha Toshiba Semiconductor device with reduced on-resistance

Also Published As

Publication number Publication date
EP2482325A2 (en) 2012-08-01
EP2482324A2 (en) 2012-08-01
CN101789431A (zh) 2010-07-28
EP2482324A3 (en) 2013-12-04
EP2200087A1 (en) 2010-06-23
US20100155831A1 (en) 2010-06-24
EP2482325A3 (en) 2013-12-04

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