JP2010056543A5 - - Google Patents

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Publication number
JP2010056543A5
JP2010056543A5 JP2009177815A JP2009177815A JP2010056543A5 JP 2010056543 A5 JP2010056543 A5 JP 2010056543A5 JP 2009177815 A JP2009177815 A JP 2009177815A JP 2009177815 A JP2009177815 A JP 2009177815A JP 2010056543 A5 JP2010056543 A5 JP 2010056543A5
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
manufacturing
substrate
soi substrate
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JP2009177815A
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English (en)
Japanese (ja)
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JP5552276B2 (ja
JP2010056543A (ja
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Priority to JP2009177815A priority Critical patent/JP5552276B2/ja
Priority claimed from JP2009177815A external-priority patent/JP5552276B2/ja
Publication of JP2010056543A publication Critical patent/JP2010056543A/ja
Publication of JP2010056543A5 publication Critical patent/JP2010056543A5/ja
Application granted granted Critical
Publication of JP5552276B2 publication Critical patent/JP5552276B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009177815A 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5552276B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009177815A JP5552276B2 (ja) 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008200001 2008-08-01
JP2008200016 2008-08-01
JP2008200016 2008-08-01
JP2008200001 2008-08-01
JP2009177815A JP5552276B2 (ja) 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010056543A JP2010056543A (ja) 2010-03-11
JP2010056543A5 true JP2010056543A5 (OSRAM) 2012-06-14
JP5552276B2 JP5552276B2 (ja) 2014-07-16

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JP2009177815A Expired - Fee Related JP5552276B2 (ja) 2008-08-01 2009-07-30 Ｓｏｉ基板の作製方法

Country Status (2)

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US (2) US7943414B2 (OSRAM)
JP (1) JP5552276B2 (OSRAM)

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CN112913033A (zh) 2018-10-26 2021-06-04 株式会社半导体能源研究所 金属氧化物的制造方法及半导体装置的制造方法
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