JP2012124263A5 - - Google Patents

Download PDF

Info

Publication number
JP2012124263A5
JP2012124263A5 JP2010272622A JP2010272622A JP2012124263A5 JP 2012124263 A5 JP2012124263 A5 JP 2012124263A5 JP 2010272622 A JP2010272622 A JP 2010272622A JP 2010272622 A JP2010272622 A JP 2010272622A JP 2012124263 A5 JP2012124263 A5 JP 2012124263A5
Authority
JP
Japan
Prior art keywords
silicon carbide
carbide substrate
manufacturing
semiconductor device
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010272622A
Other languages
English (en)
Japanese (ja)
Other versions
JP5569376B2 (ja
JP2012124263A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010272622A external-priority patent/JP5569376B2/ja
Priority to JP2010272622A priority Critical patent/JP5569376B2/ja
Priority to US13/583,564 priority patent/US8609521B2/en
Priority to CN2011800188617A priority patent/CN102859660A/zh
Priority to PCT/JP2011/075590 priority patent/WO2012077443A1/ja
Priority to KR1020127024090A priority patent/KR20130135725A/ko
Priority to EP11846625.9A priority patent/EP2650909A1/en
Priority to CA2792550A priority patent/CA2792550A1/en
Priority to TW100141705A priority patent/TW201225162A/zh
Publication of JP2012124263A publication Critical patent/JP2012124263A/ja
Publication of JP2012124263A5 publication Critical patent/JP2012124263A5/ja
Publication of JP5569376B2 publication Critical patent/JP5569376B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2010272622A 2010-12-07 2010-12-07 半導体装置の製造方法 Expired - Fee Related JP5569376B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2010272622A JP5569376B2 (ja) 2010-12-07 2010-12-07 半導体装置の製造方法
CA2792550A CA2792550A1 (en) 2010-12-07 2011-11-07 Method for manufacturing semiconductor device
CN2011800188617A CN102859660A (zh) 2010-12-07 2011-11-07 制造半导体器件的方法
PCT/JP2011/075590 WO2012077443A1 (ja) 2010-12-07 2011-11-07 半導体装置の製造方法
KR1020127024090A KR20130135725A (ko) 2010-12-07 2011-11-07 반도체 장치의 제조 방법
EP11846625.9A EP2650909A1 (en) 2010-12-07 2011-11-07 Method for manufacturing semiconductor device
US13/583,564 US8609521B2 (en) 2010-12-07 2011-11-07 Method of manufacturing semiconductor device
TW100141705A TW201225162A (en) 2010-12-07 2011-11-15 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010272622A JP5569376B2 (ja) 2010-12-07 2010-12-07 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2012124263A JP2012124263A (ja) 2012-06-28
JP2012124263A5 true JP2012124263A5 (OSRAM) 2013-10-03
JP5569376B2 JP5569376B2 (ja) 2014-08-13

Family

ID=46206945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010272622A Expired - Fee Related JP5569376B2 (ja) 2010-12-07 2010-12-07 半導体装置の製造方法

Country Status (8)

Country Link
US (1) US8609521B2 (OSRAM)
EP (1) EP2650909A1 (OSRAM)
JP (1) JP5569376B2 (OSRAM)
KR (1) KR20130135725A (OSRAM)
CN (1) CN102859660A (OSRAM)
CA (1) CA2792550A1 (OSRAM)
TW (1) TW201225162A (OSRAM)
WO (1) WO2012077443A1 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102740894B (zh) 2009-08-28 2015-07-15 克利夫兰临床医学基金会 用于治疗缺血组织的sdf-1递送
JP5694096B2 (ja) * 2011-09-08 2015-04-01 株式会社東芝 炭化珪素半導体装置の製造方法
US9966339B2 (en) 2014-03-14 2018-05-08 Taiwan Semiconductor Manufacturing Company Barrier structure for copper interconnect
ES2728101T3 (es) * 2014-04-23 2019-10-22 United Silicon Carbide Inc Formación de contactos óhmicos en semiconductores de banda prohibida ancha
US8962468B1 (en) 2014-04-23 2015-02-24 United Silicon Carbide, Inc. Formation of ohmic contacts on wide band gap semiconductors
JP6870286B2 (ja) * 2016-11-15 2021-05-12 富士電機株式会社 炭化珪素半導体装置の製造方法
CN113097059A (zh) * 2021-04-07 2021-07-09 芯璨半导体科技(山东)有限公司 一种铝掺杂4h碳化硅的激光热处理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142630A (en) 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
DE69813787T2 (de) * 1997-11-28 2003-10-23 Matsushita Electric Industrial Co., Ltd. Verfahren und vorrichtung zum aktivieren von verunreinigungen in einem halbleiter
JP2000340671A (ja) * 1999-05-26 2000-12-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP3820424B2 (ja) * 2001-03-27 2006-09-13 独立行政法人産業技術総合研究所 不純物イオン注入層の活性化法
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP2005302883A (ja) * 2004-04-08 2005-10-27 Hitachi Ltd 半導体装置の製造方法
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
US7928469B2 (en) * 2005-10-19 2011-04-19 Mitsubishi Electric Corporation MOSFET and method for manufacturing MOSFET
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
DE102008003953A1 (de) * 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements

Similar Documents

Publication Publication Date Title
JP2012124263A5 (OSRAM)
JP2009135468A5 (ja) 半導体基板及び半導体装置の作製方法
TWI685892B (zh) 用於製造固體層的方法
CN102017088B (zh) 在经脉冲激光照射而掺杂的材料上构造平坦表面
WO2010077018A3 (en) Laser firing apparatus for high efficiency solar cell and fabrication method thereof
JP2009260315A5 (OSRAM)
JP2008306166A5 (OSRAM)
JP2010056543A5 (OSRAM)
JP2009094487A5 (OSRAM)
JP2005252244A5 (OSRAM)
JP2009135437A5 (OSRAM)
JP4816390B2 (ja) 半導体チップの製造方法および半導体チップ
WO2010081505A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle aus einem siliziumsubstrat
JP2009158937A5 (OSRAM)
JP2009135464A5 (OSRAM)
JP2010034535A5 (OSRAM)
JP2008311621A5 (OSRAM)
JP2009260314A5 (OSRAM)
JP2013124206A (ja) ウエハ切断方法および装置
JP2018520085A5 (OSRAM)
JP2009260313A5 (OSRAM)
WO2015186625A1 (ja) ゲッタリング層を持つ半導体の製造方法、半導体装置の製造方法および半導体装置
JP2008277696A (ja) 半導体装置の製造方法
JP2012038932A (ja) 半導体ウェーハの薄厚化方法および貼り合せウェーハの製造方法
CN101410991A (zh) 半导体器件制造期间的局部退火