JP5569376B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5569376B2 JP5569376B2 JP2010272622A JP2010272622A JP5569376B2 JP 5569376 B2 JP5569376 B2 JP 5569376B2 JP 2010272622 A JP2010272622 A JP 2010272622A JP 2010272622 A JP2010272622 A JP 2010272622A JP 5569376 B2 JP5569376 B2 JP 5569376B2
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- 239000004065 semiconductor Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 74
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 71
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 70
- 239000012535 impurity Substances 0.000 claims description 56
- 238000000137 annealing Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 23
- 230000001678 irradiating effect Effects 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000008033 biological extinction Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 39
- 230000008569 process Effects 0.000 description 14
- 238000005224 laser annealing Methods 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
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- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
図1に示すように、本実施の形態の半導体装置100は、縦型DiMOSFET(Double Implanted Metal Oxide Semiconductor Field Effect Transistor)であって、酸化膜126、ソース電極111、上部ソース電極127、ゲート電極110、ドレイン電極112および炭化珪素基板を有する。炭化珪素基板は、ベース基板80と、バッファ層121と、n-層122と、pB領域123(第1の不純物層)と、n+領域124およびp+領域125を有する領域(第2の不純物層)とを含む。
よって、第1のレーザ201のレーザ光の方が、第2のレーザ202のレーザ光に比して、ワークWKの表面近くで吸収されやすい。逆に言えば、第2のレーザ202のレーザ光の方が、第1のレーザ201のレーザ光に比して、ワークWKのより深い位置まで侵入しやすい。
図7を参照して、まず基板準備工程(ステップS110:図6)にて、炭化珪素基板が、以下のように準備される。
Claims (7)
- 表面を有する炭化珪素基板を準備する工程と、
前記表面から前記炭化珪素基板中へイオン注入を行なうことにより不純物領域を形成する工程と、
前記不純物領域を活性化するためのアニールを行なう工程とを備え、
前記アニールを行なう工程は、前記炭化珪素基板の前記表面へ第1の波長を有する第1のレーザ光を照射する工程と、前記炭化珪素基板の前記表面へ第2の波長を有する第2のレーザ光を照射する工程とを含み、
前記炭化珪素基板は前記第1および第2の波長のそれぞれにおいて第1および第2の消衰係数を有し、前記第1の波長に対する前記第1の消衰係数の比は5×105/mよりも大きく、前記第2の波長に対する前記第2の消衰係数の比は5×105/mよりも小さく、
前記第1のレーザ光を照射する工程は、前記炭化珪素基板の前記表面の一部である第1の領域にのみ前記第1のレーザ光を照射する工程であり、
前記第2のレーザ光を照射する工程は前記炭化珪素基板の前記表面の第2の領域に前記第2のレーザ光を照射する工程であり、前記第1の領域は前記第2の領域よりも狭い、半導体装置の製造方法。 - 前記不純物領域を形成する工程は、
第1の不純物濃度を有し、前記炭化珪素基板の前記表面を基準に第1の深さに達する第1の不純物層を形成する工程と、
第2の不純物濃度を有し、前記炭化珪素基板の前記表面を基準に第2の深さに達する第2の不純物層を形成する工程とを含み、
前記第1の深さに比して前記第2の深さは小さく、前記第1の不純物濃度に比して前記第2の不純物濃度は大きい、請求項1に記載の半導体装置の製造方法。 - 前記第1および第2のレーザ光を照射する工程は、一方が行なわれた後に他方が行われる、請求項1または請求項2に記載の半導体装置の製造方法。
- 前記第1および第2のレーザ光を照射する工程は同時に行なわれる、請求項1〜請求項3のいずれか1項に記載の半導体装置の製造方法。
- 前記アニールを行なう工程は、前記炭化珪素基板をヒータによって加熱する工程を含む、請求項1〜請求項4のいずれか1項に記載の半導体装置の製造方法。
- 前記アニールを行なう工程は、不活性ガス雰囲気中、および、大気圧よりも減圧された雰囲気中のいずれかで行われる、請求項1〜請求項5のいずれか1項に記載の半導体装置の製造方法。
- 前記第1および第2のレーザ光の各々の光子エネルギーは前記炭化珪素基板のバンドギャップエネルギーよりも大きい、請求項1〜請求項6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010272622A JP5569376B2 (ja) | 2010-12-07 | 2010-12-07 | 半導体装置の製造方法 |
KR1020127024090A KR20130135725A (ko) | 2010-12-07 | 2011-11-07 | 반도체 장치의 제조 방법 |
PCT/JP2011/075590 WO2012077443A1 (ja) | 2010-12-07 | 2011-11-07 | 半導体装置の製造方法 |
CA2792550A CA2792550A1 (en) | 2010-12-07 | 2011-11-07 | Method for manufacturing semiconductor device |
CN2011800188617A CN102859660A (zh) | 2010-12-07 | 2011-11-07 | 制造半导体器件的方法 |
US13/583,564 US8609521B2 (en) | 2010-12-07 | 2011-11-07 | Method of manufacturing semiconductor device |
EP11846625.9A EP2650909A1 (en) | 2010-12-07 | 2011-11-07 | Method for manufacturing semiconductor device |
TW100141705A TW201225162A (en) | 2010-12-07 | 2011-11-15 | Method for manufacturing semiconductor device |
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JP2010272622A JP5569376B2 (ja) | 2010-12-07 | 2010-12-07 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2012124263A JP2012124263A (ja) | 2012-06-28 |
JP2012124263A5 JP2012124263A5 (ja) | 2013-10-03 |
JP5569376B2 true JP5569376B2 (ja) | 2014-08-13 |
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JP2010272622A Active JP5569376B2 (ja) | 2010-12-07 | 2010-12-07 | 半導体装置の製造方法 |
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US (1) | US8609521B2 (ja) |
EP (1) | EP2650909A1 (ja) |
JP (1) | JP5569376B2 (ja) |
KR (1) | KR20130135725A (ja) |
CN (1) | CN102859660A (ja) |
CA (1) | CA2792550A1 (ja) |
TW (1) | TW201225162A (ja) |
WO (1) | WO2012077443A1 (ja) |
Families Citing this family (6)
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CA2772610C (en) | 2009-08-28 | 2018-01-23 | The Cleveland Clinic Foundation | Sdf-1 delivery for treating ischemic tissue |
JP5694096B2 (ja) * | 2011-09-08 | 2015-04-01 | 株式会社東芝 | 炭化珪素半導体装置の製造方法 |
US9966339B2 (en) | 2014-03-14 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company | Barrier structure for copper interconnect |
US8962468B1 (en) | 2014-04-23 | 2015-02-24 | United Silicon Carbide, Inc. | Formation of ohmic contacts on wide band gap semiconductors |
EP3134914B1 (en) * | 2014-04-23 | 2019-04-10 | United Silicon Carbide Inc. | Formation of ohmic contacts on wide band gap semiconductors |
JP6870286B2 (ja) * | 2016-11-15 | 2021-05-12 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
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JPS56142630A (en) | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
CA2278578A1 (en) * | 1997-11-28 | 1999-06-10 | Tsuneo Mitsuyu | Method and device for activating semiconductor impurities |
JP2000340671A (ja) * | 1999-05-26 | 2000-12-08 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
JP3820424B2 (ja) * | 2001-03-27 | 2006-09-13 | 独立行政法人産業技術総合研究所 | 不純物イオン注入層の活性化法 |
US7109087B2 (en) * | 2003-10-03 | 2006-09-19 | Applied Materials, Inc. | Absorber layer for DSA processing |
JP2005302883A (ja) * | 2004-04-08 | 2005-10-27 | Hitachi Ltd | 半導体装置の製造方法 |
JP2006351659A (ja) * | 2005-06-14 | 2006-12-28 | Toyota Motor Corp | 半導体装置の製造方法 |
DE112006002876B4 (de) * | 2005-10-19 | 2014-07-24 | Mitsubishi Electric Corp. | MOSFETs und Verfahren zum Herstellen eines MOSFETs |
JP2007123300A (ja) * | 2005-10-25 | 2007-05-17 | Toyota Motor Corp | 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法 |
DE102008003953A1 (de) * | 2007-02-28 | 2008-09-04 | Fuji Electric Device Technology Co. Ltd. | Verfahren zur Herstellung eines Halbleiterelements |
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2010
- 2010-12-07 JP JP2010272622A patent/JP5569376B2/ja active Active
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2011
- 2011-11-07 US US13/583,564 patent/US8609521B2/en active Active
- 2011-11-07 CA CA2792550A patent/CA2792550A1/en not_active Abandoned
- 2011-11-07 EP EP11846625.9A patent/EP2650909A1/en not_active Withdrawn
- 2011-11-07 WO PCT/JP2011/075590 patent/WO2012077443A1/ja active Application Filing
- 2011-11-07 CN CN2011800188617A patent/CN102859660A/zh active Pending
- 2011-11-07 KR KR1020127024090A patent/KR20130135725A/ko not_active Application Discontinuation
- 2011-11-15 TW TW100141705A patent/TW201225162A/zh unknown
Also Published As
Publication number | Publication date |
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KR20130135725A (ko) | 2013-12-11 |
EP2650909A1 (en) | 2013-10-16 |
US8609521B2 (en) | 2013-12-17 |
WO2012077443A9 (ja) | 2012-11-08 |
CN102859660A (zh) | 2013-01-02 |
US20130040445A1 (en) | 2013-02-14 |
WO2012077443A1 (ja) | 2012-06-14 |
TW201225162A (en) | 2012-06-16 |
JP2012124263A (ja) | 2012-06-28 |
CA2792550A1 (en) | 2012-06-14 |
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