JP2010050490A5 - - Google Patents

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JP2010050490A5
JP2010050490A5 JP2009273548A JP2009273548A JP2010050490A5 JP 2010050490 A5 JP2010050490 A5 JP 2010050490A5 JP 2009273548 A JP2009273548 A JP 2009273548A JP 2009273548 A JP2009273548 A JP 2009273548A JP 2010050490 A5 JP2010050490 A5 JP 2010050490A5
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light emitting
emitting device
phosphor
semiconductor light
emitting element
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半導体からなる発光素子と、前記発光素子が放つ光が通過する位置に設けられた蛍光体層とを備え、
前記蛍光体層は、透光性樹脂と、前記発光素子が発する光を吸収して蛍光を放つ蛍光体粒子と、一次粒子の平均径が３ｎｍ以上５０ｎｍ以下の超微粒子とからなり、
前記蛍光体粒子は、前記透光性樹脂中に分散しているとともに、真比重が前記透光性樹脂よりも大きい材料からなっていて、中心粒径が０．５μｍ以上３０μｍ以下であり、
前記蛍光体粒子が放つ蛍光と前記発光素子から放たれ前記蛍光体層を通過した光とが加色された光を放つ半導体発光装置。 A light emitting device made of a semiconductor, and a phosphor layer provided at a position where light emitted from the light emitting device passes,
The phosphor layer includes a translucent resin, phosphor particles that emit light by absorbing light emitted from the light emitting element, and ultrafine particles having an average primary particle diameter of 3 nm to 50 nm,
The phosphor particles are dispersed in the translucent resin and are made of a material having a true specific gravity larger than that of the translucent resin, and the center particle diameter is 0.5 μm or more and 30 μm or less,
A semiconductor light emitting device that emits light in which fluorescence emitted from the phosphor particles and light emitted from the light emitting element and passed through the phosphor layer are added. 前記透光性樹脂が、エポキシ樹脂、ユリア樹脂、シリコーン樹脂、アクリル樹脂、ポリイミド樹脂のいずれかである請求項１に記載の半導体発光装置。   The semiconductor light emitting device according to claim 1, wherein the translucent resin is any one of an epoxy resin, a urea resin, a silicone resin, an acrylic resin, and a polyimide resin. 前記蛍光体粒子の中心粒径が１μｍ以上２０μｍ以下である請求項１または２に記載の半導体発光装置。 3. The semiconductor light emitting device according to claim 1, wherein a center particle diameter of the phosphor particles is 1 μm or more and 20 μm or less. 前記蛍光体粒子の真比重が３．０以上４．６５以下である請求項１から３のいずれか１項に記載の半導体発光装置。 The semiconductor light emitting device according to any one of claims 1 to 3 true specific gravity of 3.0 or more 4.65 or less of the phosphor particles. 蛍光体粒子濃度が１０重量％以上で８０重量％以下であることを特徴とする請求項１から４のいずれか１項に記載の半導体発光装置。5. The semiconductor light emitting device according to claim 1, wherein the phosphor particle concentration is 10 wt% or more and 80 wt% or less. 前記蛍光体濃度が２０重量％以上で６０重量％以下であることを特徴とする請求項５に記載の半導体発光装置。 6. The semiconductor light emitting device according to claim 5 , wherein the phosphor concentration is 20 wt% or more and 60 wt% or less. 前記蛍光体濃度が３０重量％以上で５０重量％以下であることを特徴とする請求項６に記載の半導体発光装置。 The semiconductor light emitting device according to claim 6 , wherein the phosphor concentration is 30 wt% or more and 50 wt% or less. 前記蛍光体層の実質厚みが５０μｍ以上１０００μｍ以下である請求項１から７のいずれか１項に記載の半導体発光装置。 The semiconductor light emitting device according to any one of claims 1 to 7 substantial thickness is 50μm or more 1000μm or less of the phosphor layer. 前記超微粒子の材料が二酸化珪素、又は酸化アルミニウムのいずれかである請求項１から８のいずれか１項に記載の半導体発光装置。 The semiconductor light-emitting device according to claim 1, wherein the material of the ultrafine particles is silicon dioxide or aluminum oxide. 前記超微粒子がチキソトロピー付与剤である請求項１から９のいずれか１項に記載の半導体発光装置。 The semiconductor light-emitting device according to claim 1, wherein the ultrafine particles are a thixotropic agent. 前記発光素子は、４３０ｎｍを超え５００ｎｍ以下の波長領域に主発光ピークを有する請求項１から１０のいずれか１項に記載の半導体発光装置。   11. The semiconductor light emitting device according to claim 1, wherein the light emitting element has a main light emission peak in a wavelength region of more than 430 nm and not more than 500 nm. 前記蛍光体粒子は、５５０ｎｍ以上６００ｎｍ以下の波長領域に主発光ピークを有する蛍光を放つ請求項１から１１のいずれか１項に記載の半導体発光装置。   12. The semiconductor light emitting device according to claim 1, wherein the phosphor particles emit fluorescence having a main emission peak in a wavelength region of 550 nm to 600 nm. 請求項１から１２のいずれか１項に記載の半導体発光装置において、
前記発光素子を複数備え、
前記蛍光体層は、単一で各前記発光素子の主光取り出し面を覆うことを特徴とする半導体発光装置。 The semiconductor light emitting device according to any one of claims 1 to 12,
A plurality of the light emitting elements are provided,
The phosphor layer is a single and covers the main light extraction surface of each of the light emitting elements. 前記蛍光体層の上面は平担であり、且つ前記発光素子の主光取り出し面に対して平行であり、
前記発光素子の主光取り出し面上に位置する前記蛍光体層の実質厚みは５０μｍ以上１０００μｍ以下であることを特徴とする請求項１３に記載の半導体発光装置。 The upper surface of the phosphor layer is flat and parallel to the main light extraction surface of the light emitting element,
The semiconductor light emitting device according to claim 13, wherein a substantial thickness of the phosphor layer located on a main light extraction surface of the light emitting element is 50 μm or more and 1000 μm or less. 前記複数の発光素子は、主面上にアノードとカソードとを有する複数の発光ダイオードであって、
前記主光取り出し面は、前記主面と対向する面であることを特徴とする請求項１３に記載の半導体発光装置。 The plurality of light emitting elements are a plurality of light emitting diodes having an anode and a cathode on a main surface,
The semiconductor light-emitting device according to claim 13, wherein the main light extraction surface is a surface facing the main surface. 前記複数の発光ダイオードが、一つの基板上にフリップチップ接続法によって固定されている請求項１５に記載の半導体発光装置。     The semiconductor light emitting device according to claim 15, wherein the plurality of light emitting diodes are fixed on a single substrate by a flip-chip connection method. 半導体からなる発光素子と、該発光素子が放つ光が通過する位置に設けられた蛍光体層とを備える半導体発光デバイスの製造方法であって、
透光性樹脂中に、前記蛍光体粒子と、一次粒子の平均径が３ｎｍ以上５０ｎｍ以下の範囲内にある超微粒子とを含有させることにより、蛍光体ペーストを形成する工程と、
前記蛍光体ペーストを、前記発光素子における、前記発光素子が放つ光が通過する位置に塗布する工程と、
前記透光性樹脂を硬化させることにより、前記蛍光体層を形成する工程とを備え、
前記蛍光体粒子は、真比重が前記透光性樹脂よりも大きい材料からなっていて、中心粒径が０．５μｍ以上３０μｍ以下である、半導体発光デバイスの製造方法。 A method for manufacturing a semiconductor light emitting device, comprising: a light emitting element made of a semiconductor; and a phosphor layer provided at a position where light emitted by the light emitting element passes.
A step of forming a phosphor paste by containing the phosphor particles and ultrafine particles having an average primary particle diameter in the range of 3 nm to 50 nm in the translucent resin;
Applying the phosphor paste to the light emitting element at a position where light emitted by the light emitting element passes;
Forming the phosphor layer by curing the translucent resin,
The method for manufacturing a semiconductor light-emitting device, wherein the phosphor particles are made of a material having a true specific gravity larger than that of the translucent resin and have a center particle size of 0.5 μm or more and 30 μm or less . 前記透光性樹脂が、エポキシ樹脂、ユリア樹脂、シリコーン樹脂、アクリル樹脂、ポリイミド樹脂のいずれかである請求項１７に記載の半導体発光デバイスの製造方法。The method for manufacturing a semiconductor light-emitting device according to claim 17, wherein the translucent resin is any one of an epoxy resin, a urea resin, a silicone resin, an acrylic resin, and a polyimide resin. 前記蛍光体層において、蛍光体粒子濃度が１０重量％以上で８０重量％以下であることを特徴とする請求項１７または１８に記載の半導体発光デバイスの製造方法。The method for manufacturing a semiconductor light-emitting device according to claim 17 or 18, wherein the phosphor layer has a phosphor particle concentration of 10 wt% or more and 80 wt% or less. 前記蛍光体層において、蛍光体粒子濃度が２０重量％以上で６０重量％以下であることを特徴とする請求項１９に記載の半導体発光デバイスの製造方法。 20. The method for manufacturing a semiconductor light emitting device according to claim 19 , wherein the phosphor layer has a phosphor particle concentration of 20 wt% or more and 60 wt% or less. 前記蛍光体層において、蛍光体粒子濃度が３０％重量以上で５０％重量以下であることを特徴とする請求項２０に記載の半導体発光デバイスの製造方法。 21. The method of manufacturing a semiconductor light emitting device according to claim 20 , wherein the phosphor layer has a phosphor particle concentration of 30% to 50% by weight. 前記蛍光体ペーストを前記発光素子の実装面を除く周囲に塗布する方法として、フォトリソグラフィー法、スクリーン印刷法、転写法のいずれかが用いられていることを特徴とする請求項１７から２１のいずれか１項に記載の半導体発光デバイスの製造方法。 The method according to any one of claims 17 to 21, wherein any one of a photolithography method, a screen printing method, and a transfer method is used as a method of applying the phosphor paste to the periphery excluding the mounting surface of the light emitting element. A method for manufacturing a semiconductor light-emitting device according to claim 1 . 前記蛍光体ペーストを前記発光素子に塗布する方法として、前記蛍光体ペーストを型へ流し込むことを特徴とする請求項１７から２１のいずれか１項記載の半導体発光デバイスの製造方法。 The method of manufacturing a semiconductor light emitting device according to any one of claims 17 to 21 , wherein the phosphor paste is poured into a mold as a method of applying the phosphor paste to the light emitting element. 前記発光素子を基板上にフリップチップ状態で搭載する工程をさらに備え、
前記蛍光体ペーストを前記発光素子の実装面を除く周囲に塗布する方法として、スクリーン印刷法が用いられていることを特徴とする請求項２２記載の半導体発光デバイスの製造方法。 Further comprising a step of mounting the light emitting element on a substrate in a flip chip state,
23. The method of manufacturing a semiconductor light emitting device according to claim 22 , wherein a screen printing method is used as a method of applying the phosphor paste to the periphery excluding the mounting surface of the light emitting element. 請求項１７から２４のいずれか１項に記載の半導体発光デバイスの製造方法において、
前記発光素子を複数備え、
前記蛍光体層は、単一で各前記発光素子の主光取り出し面を覆い、
前記蛍光体層の上面は平担で、且つ前記発光素子の主光取り出し面に対して平行であり、
前記発光素子の主光取り出し面上に位置する前記蛍光体層の実質厚みは５０μｍ以上１０００μｍ以下であることを特徴とする半導体発光デバイスの製造方法。 The method for manufacturing a semiconductor light emitting device according to claims 17 to any one of 24,
A plurality of the light emitting elements are provided,
The phosphor layer is single and covers the main light extraction surface of each light emitting element,
The upper surface of the phosphor layer is flat and parallel to the main light extraction surface of the light emitting element,
The method for manufacturing a semiconductor light emitting device, wherein the phosphor layer located on the main light extraction surface of the light emitting element has a substantial thickness of 50 μm or more and 1000 μm or less. 請求項１７から２５のいずれか１項に記載の半導体発光デバイスの製造方法において、
透光性を有する樹脂がシリコーン樹脂であることを特徴とする半導体発光デバイスの製造方法。 The method for manufacturing a semiconductor light emitting device according to claims 17 to any one of 25,
A method for producing a semiconductor light-emitting device, wherein the light-transmitting resin is a silicone resin.
JP2009273548A 2001-09-03 2009-12-01 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device Expired - Fee Related JP5308318B2 (en)

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