CN102769080A - White light LED chip and manufacturing method thereof - Google Patents
White light LED chip and manufacturing method thereof Download PDFInfo
- Publication number
- CN102769080A CN102769080A CN2012101826170A CN201210182617A CN102769080A CN 102769080 A CN102769080 A CN 102769080A CN 2012101826170 A CN2012101826170 A CN 2012101826170A CN 201210182617 A CN201210182617 A CN 201210182617A CN 102769080 A CN102769080 A CN 102769080A
- Authority
- CN
- China
- Prior art keywords
- light
- led chip
- white
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
Landscapes
- Led Device Packages (AREA)
Abstract
The invention provides a white light LED chip and a manufacturing method thereof. A luminous element is formed on a first substrate, a surface fluorescent material layer is covered on the luminous element, is made of solid materials and is formed by a magnetron sputtering, ion assistant evaporation or electron beam evaporation method, and the thickness of the surface fluorescent material layer ranges from 10 micrometers to 100 micrometers. In conclusion, the white light LED chip and the manufacturing method thereof have the advantages that the surface fluorescent material layer is formed on the luminous element, is made of the solid materials which replace mixture of silicon gel and fluorescent powder in the prior art, and is covered on the luminous element, fluorescent powder is uniform in the concentration and good in color uniformity, accordingly, color temperature uniformity of products in the same batch is improved, and the white light LED chip is consistent in color temperature. Besides, the surface fluorescent material layer is directly arranged on the luminous element, so that white light is emitted in an on-chip manner, and white light production efficiency is greatly enhanced.
Description
Technical field
The present invention relates to field of photoelectric technology, be specifically related to form surface fluorescence body layer, realize a kind of White-light LED chip of white light emission and preparation method thereof on the led chip surface.
Background technology
LED (light-emitting diode; Light Emitting Diode) can launch the light of different colours according to the luminescent material difference; Owing to have low voltage drive, all solid state, low-power consumption, long-acting advantage such as reliable; Utilizing light colour mixture principle can realize the emission of white light, is a kind of high efficiency light source that meets environmental protection and energy saving green illumination theory.The mode that realizes white light in the prior art mainly contains three kinds: promptly blue-light LED chip mixes with yellow fluorescent powder; Ultraviolet LED excites RGB fluorescent material to mix and obtains white light; The integrated white light that is packaged into of red, green, blue three-primary color LED multicore sheet.Wherein can obtain white light at the quantum well layer that the epitaxial growth stage is launched blue light and gold-tinted through epitaxial growth, also can be through encapsulated phase through on blue-light LED chip, applying the amalgam acquisition white light of silica gel and fluorescent material.Through the quantum well layer of epitaxial growth emission blue light and gold-tinted, not only internal quantum efficiency is low to adopt this method to obtain white light, and the white light lack of homogeneity that obtains of the half-wave width of blue light of launching and gold-tinted.
In the prior art; Be employed in and have the amalgam acquisition white light that applies silica gel and fluorescent material on the light-emitting component that excites ultraviolet light or royal purple light; Adopt this method to realize white light LEDs, the density unevenness that causes phosphor powder layer is even because the sinking speed of fluorescent material differs, and solid when brilliant the position of led chip in the center; It is different to cause blue-ray LED to pass through the light path of fluorescent material, and very big deviation can appear in color.And the uneven arcuate in shape that forms in the some glue process causes white light space look uniformity relatively poor, forms yellow circle or color spot easily.
So in the manufacture process of led chip, provide a kind of can becoming that technical problem to be solved is arranged at the led chip of the next directly realization of led chip superficial growth layer of surface luminescent coating white light emission.
Summary of the invention
The purpose of this invention is to provide a kind of can be at the surface fluorescence body layer of led chip superficial growth one deck solid, shaped material, with the led chip of direct realization white light emission.
For solving the problems of the technologies described above: the present invention provides a kind of White-light LED chip, comprising: first substrate; Light-emitting component, said light-emitting component are positioned on said first substrate; Surface fluorescence body layer is covered on the said light-emitting component, and said surface fluorescence body layer is the solid, shaped material, and the thickness of said surface fluorescence body layer is 10 μ m～100 μ m.
Further, the material of said surface fluorescence body layer is single-crystal mass, many crystalline solid or the block fluorophor that is by the fluorophor powder sintering.
Further, the material of said surface fluorescence body layer is yellow fluorophor, yellow fluorophor and green-emitting phosphor, yellow fluorophor and red-emitting phosphors or yellow fluorophor, green-emitting phosphor and red-emitting phosphors three's combination.
Further, the material of said yellow fluorophor is lanthanide-doped chlorate MClO 3 fluorescent substance, and the material of said green-emitting phosphor is a halo silicate, and the material of said red-emitting phosphors is a nitride phosphor.
Further, the thickness of said surface fluorescence body layer is 20 μ m～50 μ m.
Further; Said White-light LED chip is an inverted structure; Said light-emitting component upwards comprises P type layer, luminescent layer, N type layer, resilient coating and second substrate successively by first substrate, and said second substrate is a light-emitting area, and said light-emitting component also comprises first electrode and second electrode; Said first electrode is between said P type layer and said first substrate, and said second electrode is between said P type layer and said first substrate; Said White-light LED chip also comprises conductive layer, and said first electrode and second electrode are welded in said first substrate through said conductive layer.
Further, said White-light LED chip is a vertical stratification, and said light-emitting component upwards comprises first electrode, P type layer, luminescent layer and the N type layer and second electrode successively by first substrate, and said N type layer is a light-emitting area; Between said light-emitting component and said first substrate; Said led chip also comprises conductive layer and metallic reflector; Said metallic reflector is formed between said first substrate and said first electrode; The metallic reflector that said conductive layer is formed at first substrate belongs on the opposite face of face, and said surface fluorescence body layer is formed with opening on said first electrode.
Further; Said White-light LED chip is a planar structure, and said White-light LED chip is a planar structure, and said light-emitting component upwards comprises N type layer, luminescent layer and P type layer successively by first substrate; Said P type layer is a light-emitting area; Said White-light LED chip also comprises first electrode and second electrode, and said first electrode is positioned on the said P type layer, and said second electrode is positioned on the said N type layer; Said surface fluorescence body layer all is formed with opening on said first electrode and second electrode.
Further, said light-emitting component excites ultraviolet light or royal purple light.
Further, said White-light LED chip also comprises passivation layer, and said passivation layer is between said light-emitting component and said surface fluorescence body layer.
The present invention also provides a kind of manufacturing approach of White-light LED chip, comprising: first substrate is provided; On said first substrate, form light-emitting component; Covering surfaces luminescent coating on said light-emitting component; Said surface fluorescence body layer is the solid, shaped material; Said surface fluorescence body layer adopts magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form, and the thickness of said surface fluorescence body layer is 10 μ m～100 μ m.
Further, the employing magnetron sputtering method of said surface fluorescence body layer forms, and is reflected in the ar gas environment atmosphere; Reaction power is greater than 5kW; Distance is 5cm～10cm between reaction target and said first substrate, and ambient pressure is 30～60mTorr, and sedimentation time is 150s～250s.
Further, the material of said surface fluorescence body layer is single-crystal mass, many crystalline solid or the block fluorophor that is by the fluorophor powder sintering.
Further, the material of said surface fluorescence body layer is yellow fluorophor, yellow fluorophor and green-emitting phosphor, yellow fluorophor and red-emitting phosphors or yellow fluorophor, green-emitting phosphor and red-emitting phosphors three's combination.
Further, the material of said yellow fluorophor is lanthanide-doped chlorate MClO 3 fluorescent substance, and the material of said green-emitting phosphor is a halo silicate, and the material of said red-emitting phosphors is a nitride phosphor.
Further, the thickness of said surface fluorescence body layer is 20 μ m～50 μ m.
Further; Said White-light LED chip is an inverted structure; Said light-emitting component upwards comprises P type layer, luminescent layer, N type layer, resilient coating and second substrate successively by first substrate, and said second substrate is a light-emitting area, and said light-emitting component also comprises first electrode and second electrode; Said first electrode is between said P type layer and said first substrate, and said second electrode is between said P type layer and said first substrate; Said White-light LED chip also comprises conductive layer, and said first electrode and second electrode are welded in said first substrate through said conductive layer.
Further, said White-light LED chip is a vertical stratification, and said light-emitting component upwards comprises first electrode, P type layer, luminescent layer and the N type layer and second electrode successively by first substrate, and said N type layer is a light-emitting area; Between said light-emitting component and said first substrate; Said led chip also comprises conductive layer and metallic reflector; Said metallic reflector is formed between said first substrate and said first electrode; The metallic reflector that said conductive layer is formed at first substrate belongs on the opposite face of face, and said surface fluorescence body layer is formed with opening on said first electrode.
Further; Said White-light LED chip is a planar structure; Said light-emitting component upwards comprises N type layer, luminescent layer and P type layer successively by first substrate, and said P type layer is a light-emitting area, and said White-light LED chip also comprises first electrode and second electrode; Said first electrode is positioned on the said P type layer, and said second electrode is positioned on the said N type layer; Said surface fluorescence body layer all is formed with opening on said first electrode and second electrode.
Further, said light-emitting component excites ultraviolet light or royal purple light.
Further, said White-light LED chip also comprises passivation layer, and said passivation layer is between said light-emitting component and said surface fluorescence body layer.
In sum, White-light LED chip according to the invention and manufacturing approach thereof form surface fluorescence body layer on light-emitting component; Said surface fluorescence body layer is the solid, shaped material, and the amalgam of silica gel and fluorescent material is covered on the said light-emitting component in the replacement prior art; Make the concentration of fluorescent material even; Color homogeneity is good, and then improves the uniformity with the colour temperature of batch products, forms the consistent White-light LED chip of colour temperature.
Surface fluorescence body layer directly is provided with on the light-emitting component simultaneously, makes and sends white light in chip-scale, has improved the production efficiency of white light greatly.
In addition, just prepare surface fluorescence body layer, not only saved the later stage encapsulation process that realizes white light, provide cost savings in the led chip stage.
Description of drawings
Fig. 1 is the schematic flow sheet of the manufacturing approach of White-light LED chip in one embodiment of the invention.
Fig. 2 is the structural representation of White-light LED chip in one embodiment of the invention.
Fig. 3 a is the structural representation of White-light LED chip in another embodiment of the present invention.
Fig. 3 b is the structural representation of White-light LED chip in yet another embodiment of the invention.
Fig. 4 is the structural representation of White-light LED chip in further embodiment of this invention.
Embodiment
For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the general replacement that those skilled in the art knew also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes sketch map to carry out detailed statement, and when instance of the present invention was detailed, for the ease of explanation, sketch map did not amplify according to general ratio is local, should be with this as to qualification of the present invention.
The present invention provides a kind of White-light LED chip, comprises first substrate, light-emitting component and surface fluorescence body layer.Said light-emitting component is positioned on said first substrate, and said light-emitting component formal dress or flip chip bonding are connected on said first substrate; Said surface fluorescence body layer is covered on the said light-emitting component, and said surface fluorescence body layer is the solid, shaped material, and the thickness of said surface fluorescence body layer is 10 μ m～100 μ m.
Said surface fluorescence body layer is the solid, shaped material, can be single-crystal mass, many crystalline solid or the block fluorophor that is by the fluorophor powder sintering.The material of said surface fluorescence body layer is yellow fluorophor, yellow fluorophor and green-emitting phosphor, yellow fluorophor and red-emitting phosphors or yellow fluorophor, green-emitting phosphor and red-emitting phosphors three's combination.The material of said surface fluorescence body layer is independent yellow fluorophor, or increases a kind of or its combination in green-emitting phosphor and the red-emitting phosphors in the yellow fluorophor, to increase color rendering.The material of said yellow fluorophor is that YAG is a fluorophor, and it mainly is part or all the fluorophor that obtains that is also had displacement Y such as Tb, Lu by lanthanide-doped chlorate MClO 3 fluorescent substances such as Ce; The material of said green-emitting phosphor can be halo silicate, and the material of said red-emitting phosphors can be nitride phosphor.In the present embodiment, said yellow fluorophor is that YAG is fluorophor (Yttrium Aluminum Garnet), for example Y
3Al
5O
12: Ce, (Y
0.8Gd
0.2)
3Al
5O
12: Ce, Y
3(Al
0.8Ga
0.2)
5O
12: Ce or (Y, Gd)
3(Al, Ga
5) O
12: Ce etc.Said green-emitting phosphor is BOS (Barium ortho-Silicate), for example Ga
8Mg
4O
16C
L2: Eu ((Ca
7.6, Eu
0.4) MgSi
4O
16C
12); Said red-emitting phosphors is silicon nitride based phosphor, for example GaAlSiBN
3: Eu ((Ca
0.97, Eu
0.03) AlSiBN
3), other use the fluorophor with identical performance, effect, effect beyond the above-mentioned fluorophor, or the ratio of each component in the chemical formula suitably adjust also within thought range of the present invention.The thickness of said surface fluorescence body layer is 10 μ m～100 μ m, and in preferred embodiment, the thickness of said surface fluorescence body layer is 20 μ m～50 μ m.
Said surface fluorescence body layer is the solid, shaped material; The amalgam of silica gel and fluorescent material makes the concentration of fluorescent material even in the replacement prior art, and misalignment is little; Thereby can improve uniformity with the colour temperature of batch products; Simultaneously just prepare surface fluorescence body layer, not only saved the later stage encapsulation process that realizes white light, provide cost savings in the led chip stage.
Said White-light LED chip also comprises passivation layer, and said passivation layer or is positioned on the said surface fluorescence body layer between said light-emitting component and said surface fluorescence body layer.
Fig. 1 is the schematic flow sheet of the manufacturing approach of White-light LED chip in one embodiment of the invention, and in conjunction with Fig. 1 and above-mentioned White-light LED chip, the present invention also provides a kind of manufacturing approach of White-light LED chip, may further comprise the steps:
Step S01: first substrate is provided;
Step S02: on said first substrate, form light-emitting component;
Step S03: covering surfaces luminescent coating on said light-emitting component; Said surface fluorescence body layer is the solid, shaped material; Said surface fluorescence body layer adopts magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form, and the thickness of said surface fluorescence body layer is 10 μ m～100 μ m.In preferred embodiment, the thickness of said surface fluorescence body layer is 20 μ m～50 μ m.
In preferred embodiment, the employing magnetron sputtering method of said surface fluorescence body layer forms, and is reflected in the ar gas environment atmosphere; Reaction power is greater than 5kW; Distance is 5cm～10cm between reaction target and said first substrate, and ambient pressure is 30～60mTorr, and sedimentation time is 150s～250s.In preferred embodiment, in the ar gas environment atmosphere, reaction power is greater than 5kW, and distance is 7cm between reaction target and said first substrate, and ambient pressure is 56mTorr, and sedimentation time is 220s.
The amalgam of silica gel and fluorescent material in the prior art; Said surface fluorescence body layer adopts magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form; Make surface fluorescence body layer stablize more, be formed uniformly and be formed on the light-emitting component, thereby can improve uniformity, just prepare surface fluorescence body layer in the led chip stage simultaneously with the colour temperature of batch products; Not only saved the later stage encapsulation process that realizes white light, provided cost savings.
Said White-light LED chip can below in conjunction with specific embodiment, specify the structure and the manufacturing approach thereof of said White-light LED chip for inverted structure, vertical stratification or planar structure.
[embodiment 1]
Fig. 2 is the schematic flow sheet of the manufacturing approach of White-light LED chip in one embodiment of the invention, and present embodiment is for adopting the White-light LED chip of inverted structure as shown in Figure 2.
In the present embodiment, said first substrate is the aluminum-nitride-based end 10, and said light-emitting component upside-down mounting is on the said aluminum-nitride-based end 10, and said surface fluorescence body layer 3 is covered on the said light-emitting component.
White-light LED chip for inverted structure; Said light-emitting component from the aluminum-nitride-based end 10 upwards, said light-emitting component comprises P type layer 4, luminescent layer 5, N type layer 6, resilient coating 7 and second substrate 8 successively, second substrate 8 of top layer is as exiting surface; What wherein said second substrate 8 was preferable is the substrate of sapphire material; Said N type layer 6 can be nitride semi-conductor material with P type layer 4, gallium nitride for example, and said luminescent layer 5 is for exciting the multiple quantum well active layer of ultraviolet light or royal purple light.
Said light-emitting component also comprises first electrode 1 and said second electrode 2; All at said light-emitting component with at said the aluminum-nitride-based end 10; Wherein said first electrode 1 at said P type layer 4 with at said the aluminum-nitride-based end 10, and said second electrode 2 is positioned at the said N type layer 6 and the said aluminum-nitride-based end 10, between; Said White-light LED chip also comprises conductive layer 9, and said first electrode 1 and second electrode 2 are welded in through said conductive layer 9 at said the aluminum-nitride-based end 10.What the material of said conductive layer 9 was preferable is gold-tin alloy.
The manufacturing process of White-light LED chip specifically comprises in the present embodiment:
In step S01, first substrate is provided, said first substrate is the aluminum-nitride-based end 10.
In step S02; Grown buffer layer 7, N type layer 6, luminescent layer 5, P type layer 4 successively on second substrate 8 of sapphire material, and on light-emitting component, form first electrode 1 and second electrode, 2, the first electrodes 1 are connected on the P type layer 4; Second electrode 2 is connected on the N type layer 6, forms light-emitting component;
Then, to carrying out the pattern printing in the aluminum-nitride-based end 10 of aluminium nitride material, and sintering forms the wiring that is connected with light-emitting component point, and wire structures comprises Al-Si-Cu successively; Then; On the aluminum-nitride-based end 10, light-emitting component is inverted on the surface at the aluminum-nitride-based end 10 that is welded on the aluminium nitride material, and is utilized conductive layer 9 the aluminum-nitride-based end 10 and first electrode 1 and the welding of second electrode; Light-emitting component is inverted to be welded on the surface at the aluminum-nitride-based end 10; As exiting surface, realize the upside-down mounting of LED white chip with the substrate 8 of the sapphire material of light-emitting component, what wherein the material of conductive layer 9 was preferable is gold-tin alloy;
In step S03, covering surfaces luminescent coating 3 on said light-emitting component can adopt magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form, and in preferred embodiment, adopts the method for magnetron sputtering, with yellow fluorophor ingot (YAG:Ce
3+) sputter on the sidewall of exiting surface and light-emitting component of substrate 8 of sapphire material, forming the surface fluorescence body layer 3 of YAG fluorophor material, surface fluorescence body layer 3 preferable thickness are 30um;
After this, finally obtain the inverted structure led chip of white light emission through technologies such as grinding and polishing, laser cutting, technologies such as grinding and polishing, laser cutting are technological means well known to those of ordinary skill in the art, so repeat no more.
On the basis of present embodiment, said surface fluorescence body layer 3 can also evaporate the block fluorophor ingot that fluorophor powder, fluorophor powder form on light-emitting component through the method for ion assisted evaporative; Or be formed on the element through electron-beam vapor deposition method, in addition, the combination that also can pass through magnetron sputtering, ion assisted evaporative and electron-beam vapor deposition method forms, to improve the deposition velocity and the uniformity of surface fluorescence body layer 3.The material of surface fluorescence body layer 3 is removed and is adopted yellow fluorescence external separately; Can also adopt the fluorophor ingot that is combined to form of yellow fluorescent powder and green emitting phosphor; The fluorophor ingot that is combined to form of yellow fluorescent powder and red fluorescence powder, or yellow, green and yellow three's combination.For example the chemical formula of said yellow fluorophor is Y
2.95(Al
0.8, Ga
0.2) O
12: Ce
0.05The chemical formula of said green-emitting phosphor is Ga
8Mg
4O
16C
12: Eu ((Ca
7.6, Eu
0.4) MgSi
4O
16C
12); The chemical formula of said red-emitting phosphors is GaAlSiBN
3: Eu ((Ca
0.97, Eu
0.03) AlSiBN
3), the ratio of each component in the chemical formula is suitably to adjust as requested.
[embodiment 2]
Fig. 3 a is the structural representation of White-light LED chip in another embodiment of the present invention.Present embodiment is for adopting the White-light LED chip of the vertical stratification shown in Fig. 3 a; In the present embodiment; Said first substrate is a translate substrate 13; Said translate substrate 13 can be the substrate of the aluminum-nitride-based end or sapphire material, and said surface fluorescence body layer 3 is covered on the said light-emitting component, comprises the end face and the sidewall of light-emitting component.
White-light LED chip for vertical stratification; Said light-emitting component upwards comprises first electrode 1, P type layer 4, luminescent layer 5, N type layer 6 and second electrode 2 successively from translate substrate 13; N type layer 6 is as exiting surface, and what wherein the material of second substrate (not indicating among the figure) was preferable is the substrate of sapphire material, and the material of said N type layer 6 and P type layer 4 can be nitride semi-conductor material; Gallium nitride for example, said luminescent layer 5 is for exciting the multiple quantum well active layer of ultraviolet light or royal purple light.
Said led chip also comprises conductive layer 9 and metallic reflector 12, and said metallic reflector 12 is formed between said translate substrate 13 and said first electrode 1, and the metallic reflector that said conductive layer 9 is formed at translate substrate 13 belongs on the opposite face of face.The preferable material of said conductive layer 9 is a gold-tin alloy.
In addition, said surface fluorescence body layer 3 has opening on said second electrode 2, so that electrically the drawing of second electrode 2.
The manufacturing process of the White-light LED chip of vertical stratification specifically comprises in the present embodiment:
In step S01, first substrate is provided, said in the present embodiment first substrate is a translate substrate 13.
In step S02, on said translate substrate 13, form light-emitting component; Growing P-type layer 4, luminescent layer 5, N type layer 6 and first electrode 1 successively on second substrate of sapphire material form light-emitting component, and said luminescent layer 5 is for exciting the multiple quantum well active layer of ultraviolet light or royal purple light;
Then; Method through vapor deposition on first electrode 1 forms metallic reflector 12; Through chip bonding process the light-emitting component inversion is bonded on the transfer translate substrate 13; Wherein metallic reflector 12 is between translate substrate 13 and light-emitting component, and second substrate of sapphire material is positioned at top, adopts laser lift-off to remove second substrate of sapphire material then;
Thereafter; Adopt the method for (CMP) of chemico-mechanical polishing that the surface of N type layer 6 is polished; And,, then on said N type layer 6, form second electrode 2 on N type layer 6, to form roughened layer 11 through adopting high temperature KOH solution that alligatoring is carried out on the surface of N type layer 6; First electrode 1 is positioned at the light-emitting component bottom, second electrode 2 is positioned at the light-emitting component top thereby form, and with the vertical stratification of N type layer 4 as exiting surface.
In step S03; Covering surfaces luminescent coating 3 on the end face of said light-emitting component and sidewall; Can adopt magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form, in preferred embodiment, the method that adopts magnetron sputtering is with yellow fluorophor ingot (YAG:Ce
3+) sputter on the end face and sidewall of light-emitting component, forming YAG surface fluorescence body layer 3, the preferable thickness of surface fluorescence body layer of its sputter is 30um.
Thereafter, through growth SiO
2As mask layer, through photoetching, make public, be developed in the said mask layer of corrosion (indicating among the figure) among the BOE (Buffered oxide etche), form mask pattern.With the mask graph is grinding, adopts fluorine-based plasma surface fluorescence body layer 3 on said second electrode 2 of etching in inductively coupled plasma (ICP) etching machine, on second electrode 2, forms opening, draws with holding current; Another side vapor deposition in translate substrate 13 forms conductive layer 9 then.Conductive layer 9 preferable materials are gold-tin alloy; Finally obtain the light emitting diode (LED) chip with vertical structure of white light emission through technologies such as grinding and polishing, laser cutting; Technology such as grinding and polishing, laser cutting is technological means well known to those of ordinary skill in the art, so repeat no more.
On the basis of present embodiment, said surface fluorescence body layer 3 can also evaporate the block fluorophor ingot that fluorophor powder, fluorophor powder form on light-emitting component through the method for ion assisted evaporative; Or be formed on the element through electron-beam vapor deposition method, in addition, the combination that also can pass through magnetron sputtering, ion assisted evaporative and electron-beam vapor deposition method forms, to improve the deposition velocity and the uniformity of surface fluorescence body layer 3.The material of surface fluorescence body layer 3 is removed and is adopted yellow fluorescence external separately; Can also adopt the fluorophor ingot that is combined to form of yellow fluorescent powder and green emitting phosphor; The fluorophor ingot that is combined to form of yellow fluorescent powder and red fluorescence powder, or yellow, green and yellow three's combination.For example the chemical formula of said yellow fluorophor is Y
2.95(Al
0.8, Ga
0.2) O
12: Ce
0.05The chemical formula of said green-emitting phosphor is Ga
8Mg
4O
16C
12: Eu ((Ca
7.6, Eu
0.4) MgSi
4O
16C
12); The chemical formula of said red-emitting phosphors is GaAlSiBN
3: Eu ((Ca
0.97, Eu
0.03) AlSiBN
3), the ratio of each component in the chemical formula is suitably to adjust as requested.
Fig. 3 b is the structural representation of White-light LED chip in yet another embodiment of the invention.On the basis of the White-light LED chip structure shown in Fig. 3 a; Between said surface fluorescence body layer 3 and light-emitting component; Between concrete said surface fluorescence body layer 3 and the said P type layer 4, also be formed with passivation layer 14, said passivation layer 14 can have the insulating properties that improves light-emitting component.
[embodiment 3]
Fig. 4 is the structural representation of White-light LED chip in further embodiment of this invention.Present embodiment is for adopting the White-light LED chip of planar structure as shown in Figure 4, and in the present embodiment, said first substrate is a Sapphire Substrate 8, and said surface fluorescence body layer 3 is covered on the said light-emitting component, comprises the end face and the sidewall of light-emitting component.
White-light LED chip for planar structure; Said light-emitting component comprises N type layer 6, luminescent layer 5 and P type layer 4 successively; Second substrate 8 is a Sapphire Substrate; The material of said N type layer 6 and P type layer 4 can be nitride semi-conductor material, gallium nitride for example, and said luminescent layer 5 is for exciting the multiple quantum well active layer of ultraviolet light or royal purple light.
Said White-light LED chip also comprises first electrode 1 and second electrode 2, and said first electrode 1 is connected on the said P type layer 4, and said second electrode 2 is connected on the said N type layer 6.Said surface fluorescence body layer 3 all is formed with opening on said first electrode 1 and second electrode 2, so that electrically draw.
The manufacturing process of the White-light LED chip of present embodiment midplane structure specifically comprises:
In step S01, first substrate is provided, said in the present embodiment first substrate is a sapphire 8.
In step S02, grown buffer layer 7, N type layer 6, luminescent layer 5 and P type layer 4 successively on Sapphire Substrate 8, and form first electrode 1 and second electrode, 2, the first electrodes 1 are connected on the P type layer 4, second electrode 2 is connected on the N type layer 6, forms light-emitting component;
Then; Surperficial vapor deposition ITO current extending (not indicating among the figure) at P type layer 4; Method through photoetching, exposure imaging is carried out mask to the place beyond second electrode 2, through inductively coupled plasma (ICP) etching second electrode 2, until exposing said N type layer 6;
After this, adopt magnetron sputtering evaporating Al-Si-Cu electrode layer;
In step S03; Covering surfaces luminescent coating 3 on the end face of said light-emitting component and sidewall; Can adopt magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form, at first pass through growth certain thickness photoresist, pad electrode blocked through the method for photoetching, exposure imaging as mask layer; In preferred embodiment, adopt the method for passing through magnetron sputtering then with yellow fluorophor ingot (YAG:Ce
3+) sputtering at the LED crystal column surface, the sputter thickness that forms YAG surface fluorescence body layer 3 is 30um.
Then, in acetone, soak the pad electrode upper surface luminescent coating of peeling off in 5 minutes; Thereafter, vapor deposition forms conductive layer 9 on the another side of said Sapphire Substrate 8; After this finally obtain the inverted structure led chip of white light emission through technologies such as grinding and polishing, laser cutting, technologies such as grinding and polishing, laser cutting are technological means well known to those of ordinary skill in the art, so repeat no more.
On the basis of present embodiment, said surface fluorescence body layer 3 can also evaporate the block fluorophor ingot that fluorophor powder, fluorophor powder form on light-emitting component through the method for ion assisted evaporative; Or be formed on the element through electron-beam vapor deposition method, in addition, the combination that also can pass through magnetron sputtering, ion assisted evaporative and electron-beam vapor deposition method forms, to improve the deposition velocity and the uniformity of surface fluorescence body layer 3.The material of surface fluorescence body layer 3 is removed and is adopted yellow fluorescence external separately; Can also adopt the fluorophor ingot that is combined to form of yellow fluorescent powder and green emitting phosphor; The fluorophor ingot that is combined to form of yellow fluorescent powder and red fluorescence powder, or yellow, green and yellow three's combination.For example the chemical formula of said yellow fluorophor is Y
2.95(Al
0.8, Ga
0.2) O
12: Ce
0.05The chemical formula of said green-emitting phosphor is Ga
8Mg
4O
16C
12: Eu ((Ca
7.6, Eu
0.4) MgSi
4O
16C
12); The chemical formula of said red-emitting phosphors is GaAlSiBN
3: Eu ((Ca
0.97, Eu
0.03) AlSiBN
3), the ratio of each component in the chemical formula is suitably to adjust as requested.
In sum, White-light LED chip according to the invention and manufacturing approach thereof form surface fluorescence body layer on light-emitting component; Said surface fluorescence body layer is the solid, shaped material, and the amalgam of silica gel and fluorescent material is covered on the said light-emitting component in the replacement prior art; Make the concentration of fluorescent material even; Color homogeneity is good, and then improves the uniformity with the colour temperature of batch products, forms the consistent White-light LED chip of colour temperature.
Surface fluorescence body layer directly is provided with on the light-emitting component simultaneously, makes and sends white light in chip-scale, has improved the production efficiency of white light greatly.
In addition, just prepare surface fluorescence body layer, not only saved the later stage encapsulation process that realizes white light, provide cost savings in the led chip stage.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (21)
1. White-light LED chip comprises:
First substrate;
Light-emitting component, said light-emitting component are positioned on said first substrate;
Surface fluorescence body layer is covered on the said light-emitting component, and said surface fluorescence body layer is the solid, shaped material, and the thickness of said surface fluorescence body layer is 10 μ m～100 μ m.
2. White-light LED chip as claimed in claim 1 is characterized in that, the material of said surface fluorescence body layer is single-crystal mass, many crystalline solid or the block fluorophor that is by the fluorophor powder sintering.
3. White-light LED chip as claimed in claim 1; It is characterized in that the material of said surface fluorescence body layer is yellow fluorophor, yellow fluorophor and green-emitting phosphor, yellow fluorophor and red-emitting phosphors or yellow fluorophor, green-emitting phosphor and red-emitting phosphors three's combination.
4. White-light LED chip as claimed in claim 3; It is characterized in that; The material of said yellow fluorophor is lanthanide-doped chlorate MClO 3 fluorescent substance, and the material of said green-emitting phosphor is a halo silicate, and the material of said red-emitting phosphors is a nitride phosphor.
5. White-light LED chip as claimed in claim 1 is characterized in that, the thickness of said surface fluorescence body layer is 20 μ m～50 μ m.
6. White-light LED chip as claimed in claim 1; It is characterized in that said White-light LED chip is an inverted structure, said light-emitting component upwards comprises P type layer, luminescent layer, N type layer, resilient coating and second substrate successively by first substrate; Said second substrate is a light-emitting area; Said light-emitting component also comprises first electrode and second electrode, and said first electrode is between said P type layer and said first substrate, and said second electrode is between said P type layer and said first substrate; Said White-light LED chip also comprises conductive layer, and said first electrode and second electrode are welded in said first substrate through said conductive layer.
7. White-light LED chip as claimed in claim 1; It is characterized in that; Said White-light LED chip is a vertical stratification, and said light-emitting component upwards comprises first electrode, P type layer, luminescent layer and the N type layer and second electrode successively by first substrate, and said N type layer is a light-emitting area; Between said light-emitting component and said first substrate; Said led chip also comprises conductive layer and metallic reflector; Said metallic reflector is formed between said first substrate and said first electrode; The metallic reflector that said conductive layer is formed at first substrate belongs on the opposite face of face, and said surface fluorescence body layer is formed with opening on said first electrode.
8. White-light LED chip as claimed in claim 1; It is characterized in that said White-light LED chip is a planar structure, said light-emitting component upwards comprises N type layer, luminescent layer and P type layer successively by first substrate; Said P type layer is a light-emitting area; Said White-light LED chip also comprises first electrode and second electrode, and said first electrode is positioned on the said P type layer, and said second electrode is positioned on the said N type layer; Said surface fluorescence body layer all is formed with opening on said first electrode and second electrode.
9. like any described White-light LED chip in the claim 1 to 8, it is characterized in that said light-emitting component excites ultraviolet light or royal purple light.
10. like any described White-light LED chip in the claim 1 to 8, it is characterized in that said White-light LED chip can also comprise passivation layer, said passivation layer is between said light-emitting component and said surface fluorescence body layer.
11. the manufacturing approach of a White-light LED chip comprises:
First substrate is provided;
On said first substrate, form light-emitting component;
Covering surfaces luminescent coating on said light-emitting component; Said surface fluorescence body layer is the solid, shaped material; Said surface fluorescence body layer adopts magnetron sputtering, ion assisted evaporative or electron-beam vapor deposition method to form, and the thickness of said surface fluorescence body layer is 10 μ m～100 μ m.
12. the manufacturing approach of White-light LED chip as claimed in claim 11; It is characterized in that the employing magnetron sputtering method of said surface fluorescence body layer forms, and is reflected in the ar gas environment atmosphere; Reaction power is greater than 5kW; Distance is 5cm～10cm between reaction target and said first substrate, and ambient pressure is 30～60mTorr, and sedimentation time is 150s～250s.
13. the manufacturing approach of White-light LED chip as claimed in claim 11 is characterized in that, the material of said surface fluorescence body layer is single-crystal mass, many crystalline solid or the block fluorophor that is by the fluorophor powder sintering.
14. White-light LED chip as claimed in claim 11; It is characterized in that the material of said surface fluorescence body layer is yellow fluorophor, yellow fluorophor and green-emitting phosphor, yellow fluorophor and red-emitting phosphors or yellow fluorophor, green-emitting phosphor and red-emitting phosphors three's combination.
15. the manufacturing approach of White-light LED chip as claimed in claim 14; It is characterized in that; The material of said yellow fluorophor is lanthanide-doped chlorate MClO 3 fluorescent substance, and the material of said green-emitting phosphor is a halo silicate, and the material of said red-emitting phosphors is a nitride phosphor.
16. the manufacturing approach of White-light LED chip as claimed in claim 11 is characterized in that, the thickness of said surface fluorescence body layer is 20 μ m～50 μ m.
17. White-light LED chip as claimed in claim 11; It is characterized in that said White-light LED chip is an inverted structure, said light-emitting component upwards comprises P type layer, luminescent layer, N type layer, resilient coating and second substrate successively by first substrate; Said second substrate is a light-emitting area; Said light-emitting component also comprises first electrode and second electrode, and said first electrode is between said P type layer and said first substrate, and said second electrode is between said P type layer and said first substrate; Said White-light LED chip also comprises conductive layer, and said first electrode and second electrode are welded in said first substrate through said conductive layer.
18. White-light LED chip as claimed in claim 11; It is characterized in that; Said White-light LED chip is a vertical stratification, and said light-emitting component upwards comprises first electrode, P type layer, luminescent layer and the N type layer and second electrode successively by first substrate, and said N type layer is a light-emitting area; Between said light-emitting component and said first substrate; Said led chip also comprises conductive layer and metallic reflector; Said metallic reflector is formed between said first substrate and said first electrode; The metallic reflector that said conductive layer is formed at first substrate belongs on the opposite face of face, and said surface fluorescence body layer is formed with opening on said first electrode.
19. the manufacturing approach of White-light LED chip as claimed in claim 11; It is characterized in that said White-light LED chip is a planar structure, said light-emitting component upwards comprises N type layer, luminescent layer and P type layer successively by first substrate; Said P type layer is a light-emitting area; Said White-light LED chip also comprises first electrode and second electrode, and said first electrode is positioned on the said P type layer, and said second electrode is positioned on the said N type layer; Said surface fluorescence body layer all is formed with opening on said first electrode and second electrode.
20., it is characterized in that said light-emitting component excites ultraviolet light or royal purple light like any described White-light LED chip in the claim 11 to 19.
21. the manufacturing approach like any described White-light LED chip in the claim 11 to 19 is characterized in that said White-light LED chip also comprises passivation layer, said passivation layer is between said light-emitting component and said surface fluorescence body layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101826170A CN102769080A (en) | 2012-05-31 | 2012-05-31 | White light LED chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101826170A CN102769080A (en) | 2012-05-31 | 2012-05-31 | White light LED chip and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102769080A true CN102769080A (en) | 2012-11-07 |
Family
ID=47096394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101826170A Pending CN102769080A (en) | 2012-05-31 | 2012-05-31 | White light LED chip and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102769080A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014173376A1 (en) * | 2013-04-22 | 2014-10-30 | Crytur Spol. S R.O. | White light emitting diode with single crystal phosphor and the manner of production |
| CN113555474A (en) * | 2020-04-03 | 2021-10-26 | 华为技术有限公司 | LED device, manufacturing method, display module and terminal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633718A (en) * | 2001-09-03 | 2005-06-29 | 松下电器产业株式会社 | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
| CN101145594A (en) * | 2006-09-12 | 2008-03-19 | 丰田合成株式会社 | Light emitting device and method of making the same |
| CN102270733A (en) * | 2010-06-07 | 2011-12-07 | 株式会社东芝 | Optical semiconductor device and method for manufacturing same |
-
2012
- 2012-05-31 CN CN2012101826170A patent/CN102769080A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633718A (en) * | 2001-09-03 | 2005-06-29 | 松下电器产业株式会社 | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
| CN101145594A (en) * | 2006-09-12 | 2008-03-19 | 丰田合成株式会社 | Light emitting device and method of making the same |
| CN102270733A (en) * | 2010-06-07 | 2011-12-07 | 株式会社东芝 | Optical semiconductor device and method for manufacturing same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014173376A1 (en) * | 2013-04-22 | 2014-10-30 | Crytur Spol. S R.O. | White light emitting diode with single crystal phosphor and the manner of production |
| CN105189698A (en) * | 2013-04-22 | 2015-12-23 | 克莱托斯波尔公司 | White light emitting diode with single crystal phosphor and the manner of production |
| US9985185B2 (en) | 2013-04-22 | 2018-05-29 | Crytur, Spol. S.R.O. | White light emitting diode with single crystal phosphor and the manner of production |
| CN113555474A (en) * | 2020-04-03 | 2021-10-26 | 华为技术有限公司 | LED device, manufacturing method, display module and terminal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4417906B2 (en) | Light emitting device and manufacturing method thereof | |
| US7663307B2 (en) | Light-emitting device | |
| US20170179346A1 (en) | Single crystal phosphor, phosphor-containing member and light-emitting device | |
| US8287148B2 (en) | Light emitting module | |
| US20070012931A1 (en) | White semiconductor light emitting device | |
| JP3407608B2 (en) | Light emitting diode and method for forming the same | |
| CN109301047B (en) | Micro-size imaging LED chip and manufacturing method thereof | |
| JP6369774B2 (en) | Light emitting device | |
| US20070222365A1 (en) | Light-Emitting Diode and Method of Manufacturing the Same | |
| CN109285925B (en) | Full-color imaging LED chip and manufacturing method thereof | |
| JP4425977B1 (en) | Nitride red phosphor and white light emitting diode using the same | |
| CN103298909A (en) | Red phosphor, method for preparing same, and light-emitting device comprising same | |
| JP5157029B2 (en) | Light emitting device using phosphor | |
| TW200838974A (en) | Luminous device of fluorescent powder composition | |
| CN102769080A (en) | White light LED chip and manufacturing method thereof | |
| CN202712261U (en) | White light LED chip | |
| KR20120089927A (en) | Encapsulant for led and manufacturing method thereof, led using the encapsulant and manufacturing method thereof | |
| JPH10233533A (en) | Method and device for forming light emitting device | |
| CN204230291U (en) | A kind of vertical stratification White-light LED chip of wafer scale | |
| CN202712260U (en) | Plane structure white light led chip | |
| KR20100086964A (en) | Nitride red phosphors and white light emitting diode using rare-earth-co-doped nitride red phosphors | |
| CN102487116A (en) | Light emitting diode | |
| CN106604976A (en) | Phosphor composition, light emitting element package comprising same, and lighting system | |
| CN102130270B (en) | White LED luminous device | |
| KR100684043B1 (en) | White light emitting diode and method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121107 |